Abstract: The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 ?m and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 ?m. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.

Abstract: The method provides a method of preparing a silicate-containing polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The method includes introducing a feed stream of gas-filled polymeric microelements into a gas jet. The polymeric microelements have varied densities, varied wall thickness and varied particle size. Passing the gas-filled microelements in the gas jet adjacent a Coanda block, the Coanda block having a curved wall for separates the polymeric microelements with Coanda effect, inertia and gas flow resistance. The coarse polymeric microelements from the curved wall of the Coanda block to clean the polymeric microelements. The polymeric microelements collected contain less than 0.

Abstract: The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 ?m and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 ?m. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.

Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a light stable polymeric endpoint detection window, comprising: a polyurethane reaction product of an aromatic polyamine containing amine moieties and an isocyanate terminated prepolymer polyol containing unreacted —NCO moieties; and, a light stabilizer component comprising at least one of a UV absorber and a hindered amine light stabilizer; wherein the aromatic polyamine and the isocyanate terminated prepolymer polyol are provided at an amine moiety to unreacted —NCO moiety stoichiometric ratio of <95%; wherein the light stable polymeric endpoint detection window exhibits a time dependent strain of ?0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 100 minutes and an optical double pass transmission of ?15% at a wavelength of 380 nm for a window thickness of 1.

Abstract: Chemical mechanical polishing pads having a polishing layer with a polishing surface adapted for polishing a substrate are provided, wherein the polishing layer has a unique integral identification feature; wherein the unique integral identification feature is non-polish active, wherein the unique integral identification feature comprises at least two visually distinct characteristics, wherein at least one of the at least two visually distinct indicia is a non-color based indicia, wherein one of the at least two visually distinct indicia is a color based indicia, and wherein the at least two visually distinct characteristics are selected to uniquely identify the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provided is a method of making such polishing layers and for using them to polish a substrate.

Abstract: A mix head assembly for use in the manufacture of chemical mechanical polishing pad polishing layers is provided, wherein inclusions of entrained gas inclusion defects are minimized.

Abstract: A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: water, an abrasive; a diquaternary cation according to formula (I); and optionally a quaternary alkylammonium compound; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6; wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 ?/min.

Abstract: Chemical mechanical polishing pads having a window with an integral identification feature, wherein the window has a polishing face and a nonpolishing face, wherein the integral identification feature is observable through the window, and wherein the integral identification feature identifies the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads. Also provided is a method of making such chemical mechanical polishing pads and for using them to polish a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.

Abstract: A multilayer chemical mechanical polishing pad is provided, having a polishing layer with a polishing surface, a polishing layer interfacial region parallel to the polishing surface and an outer perimeter; a porous subpad layer with a bottom surface, a porous subpad layer interfacial region parallel to the bottom surface and an outer perimeter; a pressure sensitive adhesive layer; and, a light transmissive window element; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the coextensive region secures the polishing layer to the porous subpad layer without the use of a laminating adhesive; wherein the pressure sensitive adhesive layer is applied to the bottom surface of the porous subpad layer; wherein an internal opening extends through the multilayer chemical mechanical polishing pad from the bottom surface to the polishing surface and is bounded by an internal peripheral edge of the porous subpad layer.

Abstract: A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt % abrasive having an average particle size of ?100 nm; 0.001 to 5 wt % quaternary compound; a material having a formula (I): wherein R is selected from C2-C20 alkyl, C2-C20 aryl, C2-C20 aralkyl and C2-C20 alkaryl; wherein x is an integer from 0 to 20; wherein y is an integer from 0 to 20; wherein x+y?1; and, wherein the chemical mechanical polishing composition has a pH?5.

Abstract: The invention provides a polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad. The polishing pad comprises a center, an inner region surrounding the center, a transition region connecting grooves from the inner region to an outer region surrounding the inner region. The outer region has multiple grooves with a high-rate path. The transition region is adjacent the outer region and within a radius from the center defined as follows: r TR = 0.7 ? r * ? ? to ? ? 1.3 ? r * where r * = R C ? ( R R C ) 2 - cos ? ( 2 ? ? c ? ? 0 ) - sin ? ( 2 ? ? c ? ? 0 ) ? ( R / R C cos ? ? ? c ? ? 0 ) 2 - 1 ; with the inner region originating continuous grooves that extend uninterrupted to the outer region.

Abstract: The invention provides a method for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad. The substrate is fixed within a carrier fixture having a channel-free surface. The method comprises securing the substrate in the carrier fixture with the channel-free surface adjacent and parallel to a polishing surface of the polishing pad. The polishing pad has multiple grooves with high-rate paths. The method includes applying polishing medium to the polishing pad adjacent the carrier fixture; and rotating the polishing pad and carrier fixture to polish the substrate with the polishing pad and the polishing medium wherein the channel-free surface of the carrier fixture presses against the polishing pad to impede flow of the polishing medium into the substrate and the high-rate groove paths traverse the carrier fixture to promote flow of the polishing medium to the substrate.

Abstract: A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula I wherein the second substance is according to formula II an abrasive; and water.

Abstract: A mix head assembly for use in the manufacture of chemical mechanical polishing pad polishing layers is provided, wherein inclusions of entrained gas inclusion defects are minimized.

Abstract: The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent selected from imine derivative compounds, hydrazine derivative compounds and mixtures thereof, and water; and the solution has an acidic pH.

Abstract: The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.

Abstract: A method for manufacturing chemical mechanical polishing pad polishing layers that minimizes entrained gas inclusion defects is provided. Also provided is a mix head assembly for use in the manufacture of chemical mechanical polishing pad polishing layers, wherein inclusions of entrained gas inclusion defects are minimized.

Abstract: The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quanternary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

Abstract: The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a plurality of polishing elements (402, 502, 602, 702). The polishing elements (402, 502, 602, 702) are aligned in a vertical direction and having a first and a second end. A plurality of junctions (404, 510, 610, 710) connects the first and second ends of the polishing elements (402, 502, 602, 702) with at least three polishing elements at each of the plurality of junctions (404, 510, 610, 710) for forming a tier. Each tier representing a thickness in the vertical direction between the first and second ends of the polishing elements (402, 502, 602, 702). And an interconnected lattice structure (400, 600) forms from connecting sequential tiers of the plurality of junctions (404, 504) that connect the polishing elements (402, 502, 602, 702).

Abstract: A method for making a multilayer chemical mechanical polishing pad comprising: providing a polishing layer, providing a subpad layer, optionally providing additional layers, providing an unset reactive hot melt adhesive, applying the unset reactive hot melt adhesive in a pattern on a surface of at least one of the layers, applying one of the other layers over the pattern of unset reactive hot melt adhesive, pressing the two layers together with the unset reactive hot melt adhesive interposed therebetween, allowing the unset reactive hot melt adhesive to set forming a reactive hot melt adhesive bond between the two layers.