Abstract: A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block comprising, comprises an olefin copolymer; wherein the window block exhibits a uniform chemical composition across its thickness; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the window block is disposed within the counterbore opening.

Abstract: A polishing pad capable of maintaining a high level of dimensional stability during absorption of moisture or water includes a polishing layer including a polyurethane foam having fine cells, wherein the polyurethane foam includes a cured product of a reaction of an isocyanate-terminated prepolymer (a), a polymerized diisocyanate, and a chain extender, and the isocyanate-terminated prepolymer (a) includes an isocyanate monomer, a high molecular weight polyol (a), and a low molecular weight polyol. A method for manufacturing such a polishing pad includes mixing a first component containing an isocyanate-terminated prepolymer with a second component containing a chain extender and curing the mixture to form a polyurethane foam. The pad so made is used in the manufacture of semiconductor devices.

Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface; and, an endpoint detection window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: an isocyanate terminated urethane prepolymer having 5.5 to 9.5 wt % unreacted NCO groups, wherein the isocyanate terminated urethane prepolymer is a reaction product of ingredients comprising: an aliphatic polyfunctional isocyanate; and, a prepolymer polyol; and, a curative system, comprising: 0 to 99 wt % of a difunctional curative; and, 1 to 100 wt % of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface; and, an endpoint detection window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: an isocyanate terminated urethane prepolymer having 5.5 to 9.5 wt % unreacted NCO groups, wherein the isocyanate terminated urethane prepolymer is a reaction product of ingredients comprising: an aromatic polyfunctional isocyanate; and, a prepolymer polyol; and, a curative system, comprising: 0 to 90 wt % of a difunctional curative; and, 10 to 100 wt % of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: A method for chemical mechanical polishing of a substrate comprising ruthenium and copper is provided wherein the substrate is contacted with a polishing slurry containing an abrasive, hypochlorite, a copolymer of acrylic acid and methacrylic acid, benzotriazole, poly(methyl vinyl ether) and a non-ionic surfactant at a pH of 9 to 11.

Abstract: A process for chemical mechanical polishing of a substrate having an exposed silicon dioxide feature is provided comprising: providing a chemical mechanical polishing composition, containing, as initial components: water, a colloidal silica abrasive and a zirconyl compound; wherein a pH of the chemical mechanical polishing composition is ?6; providing a chemical mechanical polishing pad with a polishing surface; dispensing the chemical mechanical polishing composition onto the polishing surface of the chemical mechanical polishing pad in proximity to an interface between the chemical mechanical polishing pad and the substrate; and, creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate; wherein the substrate is polished.

Abstract: A composition and method for tungsten is provided comprising: a metal oxide abrasive; an oxidizer; a tungsten removal rate enhancing substance according to formula I; and, water; wherein the polishing composition exhibits an enhanced tungsten removal rate and a tungsten removal rate enhancement.

Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.

Abstract: A chemical mechanical polishing pad is provided containing: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition exhibits an acid number of ?0.5 mg (KOH)/g; wherein the polishing surface is adapted for polishing a substrate; and, wherein the polishing surface exhibits a conditioning tolerance of ?80%.

Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A chemical mechanical polishing pad is providing containing a polishing layer having a polishing surface; and, an endpoint detection window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: an isocyanate terminated urethane prepolymer having 2 to 6.5 wt % unreacted NCO groups; and, a curative system, comprising: at least 5 wt % of a difunctional curative; at least 5 wt % of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and, 25 to 90 wt % of a high molecular weight polyol curative having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises a cyclic olefin addition polymer; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ?40%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.

Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Abstract: A chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate is provided containing a polishing layer, wherein the polishing layer comprises the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the broad spectrum, endpoint detection window block is disposed within the counterbore opening.

Abstract: A method for pretexturing the polishing surface of a chemical mechanical polishing layer, comprising providing a chemical mechanical polishing layer having a polishing surface; providing a belt sanding machine; feeding the chemical mechanical polishing layer through a gap between a transport belt and a calibrating sanding belt of the belt sanding machine; and, wherein the polishing surface comes into contact with the calibrating sanding belt; wherein the thickness of the polishing layer is reduced.

Abstract: A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.

Abstract: The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The polishing pad includes a polymeric matrix, the polymeric matrix having a polishing surface. In addition, polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. The polymeric microelements have an outer surface and being fluid-filled for creating texture at the polishing surface. And alkaline-earth metal oxide-containing regions are distributed within each of the polymeric microelements and spaced to coat less than 50 percent of the outer surface of the polymeric microelements.