Patents Assigned to Rohm and Haas Electronic Materials, LLC
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Patent number: 9725816Abstract: Amino sulfonic acid based polymers are reaction products of amino sulfonic acids, an amine, polyepoxide compounds and epihalohydrin. The polymers may be used as levelers in copper electroplating baths, to provide good throwing power. Such reaction products may plate copper or copper alloys with good surface properties and good physical reliability.Type: GrantFiled: December 30, 2014Date of Patent: August 8, 2017Assignee: Rohm and Haas Electronic Materials LLCInventors: Weijing Lu, Zuhra I Niazimbetova, Maria Anna Rzeznik
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Patent number: 9720321Abstract: New lactone-containing photoacid generator compounds (“PAGs”) and photoresist compositions that comprise each PAG compounds are provided. These photoresist compositions are useful in the manufacture of electronic device.Type: GrantFiled: November 15, 2011Date of Patent: August 1, 2017Assignee: Rohm and Haas Electronic Materials LLCInventors: Emad Aqad, Mingqi Li, Cheng-Bai Xu, Cong Liu
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Patent number: 9708493Abstract: In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.Type: GrantFiled: November 10, 2014Date of Patent: July 18, 2017Assignee: Rohm and Haas Electronic Materials LLCInventors: John P. Amara, James F. Cameron, Jin Wuk Sung, Gregory P. Prokopowicz
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Patent number: 9703192Abstract: New onium salt compounds and methods for synthesis of such compounds are provided. Preferred methods of the invention include (a) providing an onium salt compound comprising a sulfonate component having an electron withdrawing group; and (b) treating the onium salt compound with a halide salt to form a distinct salt of the onium compound. The present onium compounds are useful as an acid generator component of a photoresist composition.Type: GrantFiled: September 16, 2013Date of Patent: July 11, 2017Assignee: Rohm and Haas Electronic Materials LLCInventor: Paul J. LaBeaume
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Patent number: 9702046Abstract: Electroless copper plating baths include alternative reducing agents to the conventional reducing agents currently used in the electroless plating industry. The electroless copper baths are stable and deposit a salmon bright copper deposit on substrates. Exclusion of many environmentally unfriendly conventional reducing agents enables environmentally friendly electroless copper plating baths.Type: GrantFiled: January 12, 2016Date of Patent: July 11, 2017Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLCInventors: David S. Laitar, Crystal P. L. Li, Andy Lok-Fung Chow
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Patent number: 9703203Abstract: Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group, wherein the fourth monomer is different from the first monomer and the second monomer.Type: GrantFiled: June 3, 2016Date of Patent: July 11, 2017Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLCInventors: Vipul Jain, Mingqi Li, Huaxing Zhou, Jong Keun Park, Phillip D. Hustad, Jin Wuk Sung
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Patent number: 9703200Abstract: Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer.Type: GrantFiled: December 31, 2014Date of Patent: July 11, 2017Assignee: Rohm and Haas Electronic Materials LLCInventors: Jong Keun Park, Christopher Nam Lee, Cecily Andes, Choong-Bong Lee
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Patent number: 9696627Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.Type: GrantFiled: December 13, 2010Date of Patent: July 4, 2017Assignee: Rohm and Haas Electronic Materials LLCInventors: Deyan Wang, Jinrong Liu, Cong Liu, Doris Kang, Anthony Zampini, Cheng-Bai Xu
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Patent number: 9696624Abstract: A composite, which is a blend comprising: a nanoparticle comprising a core and a coating surrounding the core; and a polymer, wherein the coating of the nanoparticle comprises a ligand, wherein the ligand is a substituted or unsubstituted C1-C16 carboxylic acid or a salt thereof, a substituted or unsubstituted C1-C16 amino acid or a salt thereof, a substituted or unsubstituted C1-C16 dialkyl phosphonate, or a combination thereof; and wherein the polymer is a polymerization product of a photoacid generator comprising a polymerizable group; at least one unsaturated monomer, which is different from the photoacid generator comprising a polymerizable group; and a chain transfer agent of formula (I); wherein: Z is a y valent C1-20 organic group, x is 0 or 1, and Rd is a substituted or unsubstituted C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl.Type: GrantFiled: July 29, 2015Date of Patent: July 4, 2017Assignees: ROHM AND HAAS ELECTRONIC MATERIALS LLC, THE UNIVERSITY OF QUEENSLANDInventors: James W. Thackeray, Meiliana Siauw, Peter Trefonas, III, Idriss Blakey, Andrew Keith Whittaker
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Patent number: 9696622Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.Type: GrantFiled: June 27, 2011Date of Patent: July 4, 2017Assignee: Rohm and Haas Electronic Materials LLCInventor: Deyan Wang
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Patent number: 9696629Abstract: Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.Type: GrantFiled: December 16, 2015Date of Patent: July 4, 2017Assignee: Rohm and Haas Electronic Materials LLCInventors: Irvinder Kaur, Cong Liu, Kevin Rowell
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Patent number: 9690199Abstract: In a first aspect, methods are provided that comprise: (a) applying a curable composition on a substrate; (b) applying a hardmask composition above the curable composition; (c) applying a photoresist composition layer above the hard mask composition, wherein one or more of the compositions are removed in an ash-free process. In a second aspect, methods are provided that comprise (a) applying an organic composition on a substrate; (b) applying a photoresist composition layer above the organic composition, wherein the organic composition comprises a material that produce an alkaline-soluble group upon thermal and/or radiation treatment. Related compositions also are provided.Type: GrantFiled: April 13, 2016Date of Patent: June 27, 2017Assignee: Rohm and Haas Electronic Materials LLCInventors: Anthony Zampini, Michael K. Gallagher, Owendi Ongayi
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Publication number: 20170175272Abstract: Pyrimidine derivatives which contain one or more electron donating groups on the ring are used as catalytic metal complexing agents in aqueous alkaline environments to catalyze electroless metal plating on metal clad and un-clad substrates. The catalysts are monomers and free of tin and antioxidants.Type: ApplicationFiled: September 4, 2014Publication date: June 22, 2017Applicant: Rohm and Haas Electronic Materials LLCInventors: Kristen Milum, Maria Rzeznik, Donald Cleary, Julia Kozhukh, Zukhra Niazimbetova
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Patent number: 9684241Abstract: Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group. Also provided are pattern treatment methods using the described compositions.Type: GrantFiled: June 3, 2016Date of Patent: June 20, 2017Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLCInventors: Vipul Jain, Mingqi Li, Huaxing Zhou, Jong Keun Park, Phillip D. Hustad, Jin Wuk Sung
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Patent number: 9671697Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.Type: GrantFiled: June 3, 2016Date of Patent: June 6, 2017Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLCInventors: Huaxing Zhou, Mingqi Li, Vipul Jain, Jong Keun Park, Phillip D. Hustad, Jin Wuk Sung
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Patent number: 9671689Abstract: New photoacid generator compounds (“PAGs”) are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.Type: GrantFiled: December 10, 2010Date of Patent: June 6, 2017Assignee: Rohm and Haas Electronic Materials LLCInventors: Emad Aqad, Mingqi Li, Joseph Mattia, Cheng-Bai Xu
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Publication number: 20170156216Abstract: Pyrazine derivatives which contain one or more electron donating groups on the ring are used as catalytic metal complexing agents in aqueous alkaline environments to catalyze electroless metal plating on metal clad and un-clad substrates. The catalysts are monomers and free of tin and antioxidants.Type: ApplicationFiled: September 4, 2014Publication date: June 1, 2017Applicant: Rohm and Haas Electronic Materials LLCInventors: Feng Liu, Maria Rzeznik
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Patent number: 9665005Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature.Type: GrantFiled: June 3, 2016Date of Patent: May 30, 2017Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLCInventors: Vipul Jain, Mingqi Li, Huaxing Zhou, Jong Keun Park, Phillip D. Hustad, Jin Wuk Sung
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Patent number: 9663682Abstract: Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.Type: GrantFiled: June 22, 2015Date of Patent: May 30, 2017Assignees: DOW GLOBAL TECHNOLOGIES LLC, ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Jieqian Zhang, Phillip D. Hustad, Peter Trefonas, III, Mingqi Li, Valeriy V. Ginzburg, Jeffrey D. Weinhold
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Patent number: 9665001Abstract: New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.Type: GrantFiled: December 15, 2010Date of Patent: May 30, 2017Assignee: Rohm and Haas Electronic Materials LLCInventor: Gerhard Pohlers