Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Substrates, such as printed circuit boards, are coated with an aqueous alkaline developable UV photosensitive material followed by applying an aqueous soluble UV transparent film to coat the UV photosensitive material. An aqueous alkaline soluble UV blocking composition is selectively applied to the surface of the UV blocking film to function as a mask. UV light is applied to portions of the UV photosensitive material not covered by the mask. The UV blocking composition, UV transparent film and selective sections of the UV photosensitive material are simultaneously removed with an aqueous alkaline developer solution to form an image on the substrate.

Abstract: Compositions containing an adhesive material, a release additive and a copper passivation agent are suitable for temporarily bonding two surfaces, such as a semiconductor substrate active side and a carrier substrate. These compositions are useful in the manufacture of electronic devices where a temporary bonding of a component to a substrate having a copper surface is desired.

Abstract: Substrates, such as printed circuit boards, are coated with an aqueous alkaline developable UV photosensitive material followed by applying an aqueous soluble UV transparent film to coat the UV photosensitive material. An aqueous alkaline strippable UV blocking composition is selectively applied to the surface of the UV transparent film to function as a mask. UV light is applied to portions of the UV photosensitive material not covered by the mask. The UV blocking composition, UV transparent film and selective sections of the UV photosensitive material are simultaneously removed with an aqueous alkaline developer solution to form an image on the substrate.

Abstract: Electrochemical impedance spectroscopy is used to determine the amount of organic additive in a metal electroplating bath.

Abstract: The copper electroless baths are formaldehyde free and are environmentally friendly. The electroless copper baths include one or more sulfinate compounds as reducing agents to replace formaldehyde. The electroless baths are stable and deposit a bright copper on substrates.

Abstract: Hot melt compositions include non-aromatic cyclic (alkyl)acrylates and low acid number waxes. Upon application of actinic radiation, the hot melt compositions cure to form resists. They may be stripped from substrates with high alkaline strippers. The hot melt compositions may be used in the manufacture of printed circuit boards and photovoltaic devices.

Abstract: Sulfonamide based polymers are reaction products of sulfonamides and epoxides. The polymers may be used as levelers in copper electroplating baths, to provide good throwing power. Such reaction products may plate copper or copper alloys with good surface properties and good physical reliability.

Abstract: A polymer includes repeat units, most of which are photoacid-generating repeat units. Each of the photoacid-generating repeat units includes photoacid-generating functionality and base-solubility-enhancing functionality. Each of the photoacid-generating repeat units comprises an anion and a photoacid-generating cation that collectively have structure (I) wherein q, r, R1, m, X, and Z? are defined herein. The polymer is useful as a component of a photoresist composition that further includes a second polymer that exhibits a change in solubility in an alkali developer under action of acid.

Abstract: Amino sulfonic acid based polymers are reaction products of amino sulfonic acids, an amine, polyepoxide compounds and epihalohydrin. The polymers may be used as levelers in copper electroplating baths, to provide good throwing power. Such reaction products may plate copper or copper alloys with good surface properties and good physical reliability.

Abstract: Aqueous catalysts of nanoparticles of precious metals and stabilizers of flavonoid derivatives are used to electrolessly plate metal on non-conductive substrates. Such substrates include printed circuit boards.

Abstract: Aromatic resin polymers and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

Abstract: The methods inhibit or reduce dimpling and voids during copper electroplating of through-holes with flash copper layers in substrates such as printed circuit boards. An acid solution containing reaction products of aromatic heterocyclic nitrogen compounds and epoxy-containing compounds is applied to the through-holes of the substrate followed by filling the through-holes with copper using a copper electroplating bath which includes additives such as brighteners and levelers.

Abstract: Hot melt compositions include non-aromatic cyclic (alkyl)acrylates and low acid number waxes. Upon application of actinic radiation, the hot melt compositions cure to form resists. They may be stripped from substrates with high alkaline strippers. The hot melt compositions may be used in the manufacture of printed circuit boards and photovoltaic devices.

Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a thermal acid generator and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to generate an acid in the trimming composition from the thermal acid generator, thereby causing a change in polarity of the matrix polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

Abstract: Photoresist overcoat compositions are provided. The compositions comprise: a matrix polymer, an additive polymer a basic quencher and an organic solvent. The additive polymer has a lower surface energy than a surface energy of the matrix polymer, and the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition. The compositions have particular applicability in the semiconductor manufacturing industry for use in negative tone development processes.

Abstract: A copolymer includes repeat units derived from an acid-labile monomer, an aliphatic lactone-containing monomer, a C1-12 alkyl (meth)acrylate in which the C1-12 alkyl group includes a specific base-soluble group, a photoacid-generating monomer that includes an aliphatic anion, and a neutral aromatic monomer having the formula wherein R1, R2, R3, X, m, and R5 are defined herein. The copolymer is used as a component of a photoresist composition. A coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using the coated substrate are described.

Abstract: Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

Abstract: Pyrimidine derivatives which contain one or more electron donating groups on the ring are used as catalytic metal complexing agents in aqueous alkaline environments to catalyze electroless metal plating on metal clad and un-clad substrates. The catalysts are monomers and free of tin and antioxidants.

Abstract: Pyrazine derivatives which contain one or more electron donating groups on the ring are used as catalytic metal complexing agents in aqueous alkaline environments to catalyze electroless metal plating on metal clad and un-clad substrates. The catalysts are monomers and free of tin and antioxidants.