Abstract: A neutral to alkaline chemical mechanical composition for polishing tungsten includes, as initial components: water; an oxidizing agent selected from an iodate compound, a periodate compound and mixtures thereof; colloidal silica abrasive particles including a nitrogen-containing compound; optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the neutral to alkaline chemical mechanical polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and, further, to at least inhibit static etch of the tungsten.

Abstract: Silver electroplating compositions deposit silver with low coefficients of friction on substrates, such as nickel, copper and copper alloys. The silver deposits have coefficients of friction of less than or equal to 1 in contrast to many conventional silver deposits which typically have coefficients of friction greater than 1, such as 1.5. The silver deposits also have improved wear resistance in contrast to silver deposited from many conventional silver electroplating baths. The low coefficients of friction and improved wear resistance of silver deposited from the silver electroplating compositions is especially suitable for connectors and electronics finishes. Preferably, the silver electroplating compositions are cyanide-free silver electroplating compositions.

Abstract: The invention provides a method for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The method includes attaching a polymer-polymer composite polishing pad having a polishing layer to a polishing device. A hydrophilic polymeric matrix forms the polishing layer. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. A slurry containing anionic particles is applied to the polymer-polymer composite polishing pad and rubbed against the substrate to polish or planarize the substrate with the fluoropolymer particles interacting with the anionic particles to increase polishing removal rate.

Abstract: There is provided a curable composition for forming an anti-reflective film. The composition includes: (a) hollow silica nanoparticles; (b) a siloxane binder having reactive groups; (c) at least one additional material having reactive groups; (d) an initiator; and (e) solvent. The siloxane binder is present in an amount that is at least 50% by weight of the total weight of (siloxane binder+additional materials having reactive groups). The weight ratio of hollow silica nanoparticles to the total of (siloxane binder+additional materials having reactive groups) is no greater than 1.75 to 1.

Abstract: A method for forming a photoresist relief image including applying a layer of a coating composition on a substrate; and disposing a layer of a photoresist composition on the layer of the coating composition, wherein the coating composition comprises an amine-containing polymer comprising a hydrocarbon-substituted amino group and having nitrogen atoms in an amount from 3 to 47 weight percent, based on a total weight of the amine-containing polymer.

Abstract: A polymer comprising a first repeating unit including an amino group protected by an alkoxycarbonyl group; a second repeating unit including a nucleophilic group; and a third repeating unit including a crosslinkable group, wherein the first repeating unit, the second repeating unit, and the third repeating unit are different from each other.

Abstract: The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

Abstract: A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): wherein, EWG, Y, R, and M+ are the same as described in the specification.

Abstract: The present invention provides methods of manufacturing a chemical mechanical polishing (CMP polishing) layer for polishing substrates, such as semiconductor wafers comprising providing a composition of a plurality of liquid-filled microelements having a polymeric shell; classifying the composition via centrifugal air classification to remove fines and coarse particles and to produce liquid-filled microelements having a density of 800 to 1500 g/liter; and, forming the CMP polishing layer by (i) converting the classified liquid-filled microelements into gas-filled microelements by heating them, then mixing them with a liquid polymer matrix forming material and casting or molding the resulting mixture to form a polymeric pad matrix, or (ii) combining the classified liquid-filled microelements directly with the liquid polymer matrix forming material, and casting or molding.

Abstract: A polishing pad useful in chemical mechanical polishing comprises a base, and a plurality of structures protruding from the base wherein a portion of the plurality of structures are defined by a cross section having a perimeter which defines an area. The perimeter can be defined by parametric equations and can have six or more inflection points or the cross-section can comprise three or more lobes. The cross-section has a Delta parameter in the range of 0.2 to 0.75.

Abstract: Crystal plane orientation enrichment compounds are applied to copper to modify copper grain orientation distribution to the favorable crystal plain orientation to enhance copper electroplating. Electroplating copper on the modified copper enables faster and selective electroplating.

Abstract: New Te-zwitterion compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Abstract: Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

Abstract: New composition and methods are provided that include antireflective compositions that can exhibit enhanced etch rates in standard plasma etchants. Preferred antireflective coating compositions of the invention have decreased carbon content relative to prior compositions.

Abstract: The invention provides a method for polishing or planarizing a substrate. First, the method comprises attaching a polymer-polymer composite polishing pad to a polishing device. The polishing pad has a polymer matrix and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a zeta potential more negative than the polymeric matrix. Cationic particle-containing slurry is applied to the polishing pad. Conditioning the polymer-polymer composite polishing pad exposes the fluoropolymer particles to the polishing surface and creates fluoropolymer-containing debris particles in the slurry. Polishing or planarizing the substrate with the increased electronegativity from the fluoropolymer at the polishing surface and in the fluoropolymer-containing debris particles stabilizes the cationic particle-containing slurry to decreases the precipitation rate of the cationic particle-containing slurry.

Abstract: An anti-reflective coating composition is provided. The anti-reflective coating composition of the present invention can be useful in preventing a pull-back phenomenon in which an anti-reflective coating layer tears on a corner of a pattern of a substrate during a heat curing process and improving gap-filling performance of the pattern since a crosslinker is attached to a polymer in the composition and the content of the low-molecular-weight crosslinker in the composition is minimized to regulate a heat curing initiation temperature.

Abstract: Monomers and polymers are provided that comprise a carbon alicyclic group or heteroalicyclic group that comprises 1) one or more acid-labile ring substituents and 2) one or more ether or thioether ring substituents. Photoresists that comprise such polymers also are provided.

Abstract: In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I): Photoresists that comprises such polymers also are provided.

Abstract: A method of enhancing the removal rate of polysilicon from a substrate includes mixing an acid chemical mechanical polishing slurry containing water, an organic acid and an abrasive with an alkaline solution containing water, an abrasive, a low alkyl amine compound; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the mixture of the chemical mechanical polishing slurry and the alkaline solution onto the polishing surface at or near the interface between the polishing pad and the substrate, wherein some of the polysilicon is polished away from the substrate.