Abstract: A chemical mechanical polishing pad, polishing layer analyzer is provided, wherein the analyzer is configured to detect macro inhomogeneities is polymeric sheets and to classify the polymeric sheets as either acceptable or suspect.

Abstract: The purpose of the present invention is to provide a polishing pad that hardly generates scratches on a surface of a subject to be polished. This polishing pad is characterized in that: the polishing pad is provided with a polishing layer having a polishing region and a light-transmitting region; the light-transmitting region includes a surface layer positioned on the pad surface side, and at least one soft layer laminated under the surface layer, and the soft layer has a hardness lower than that of the surface layer.

Abstract: The polishing pad is for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of H12MDI/TDI with polytetramethylene ether glycol to form an isocyanate-terminated reaction product. The isocyanate-terminated reaction product has 8.95 to 9.25 weight percent unreacted NCO and has an NH2 to NCO stoichiometric ratio of 102 to 109 percent. The isocyanate-terminated reaction product is cured with a 4,4?-methylenebis(2-chlororaniline) curative agent. The cast polyurethane polymeric material, as measured in a non-porous state, having a shear storage modulus, G? of 250 to 350 MPa as measured with a torsion fixture at 30° C. and 40° C. and a shear loss modulus, G? of 25 to 30 MPa as measured with a torsion fixture at 40° C. The polishing pad having a porosity of 20 to 50 percent by volume and a density of 0.60 to 0.95 g/cm3.

Abstract: A method for manufacturing a laminated polishing pad of the present invention, comprising the steps of: forming a polishing layer by providing a light transmitting region in an opening A of a polishing region; providing an adhesive member X on one side of the polishing layer, wherein the adhesive member X contains a hot-melt adhesive; providing a removable protective member on a part of the adhesive member X corresponding to the light transmitting region; bonding a support layer to the adhesive member X on which the removable protective member is provided; and removing a part of the support layer corresponding to the light transmitting region and also removing the removable protective member to form an opening B.

Abstract: A method of polishing a sapphire substrate is provided, comprising: providing a substrate having an exposed sapphire surface; providing a chemical mechanical polishing slurry, wherein the chemical mechanical polishing slurry comprises, as initial components: colloidal silica abrasive, wherein the colloidal silica abrasive has a negative surface charge; and, wherein the colloidal silica abrasive exhibits a multimodal particle size distribution with a first particle size maximum between 2 and 25 nm; and, a second particle size maximum between 75 and 200 nm; optionally, a biocide; optionally, a nonionic defoaming agent; and, optionally, a pH adjuster. A chemical mechanical polishing composition for polishing an exposed sapphire surface is also provided.

Abstract: The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Abstract: The purpose of the present invention is to provide: a polishing pad having a high polishing rate and excellent planarizing properties; and a method for producing the polishing pad. A polishing pad which has a polishing layer comprising a polyurethane resin foam, said polishing pad being characterized in that a polyurethane resin, which is a material used for forming the polyurethane resin foam, has an alkoxysilyl group represented by general formula (1) in a side chain thereof. (In the formula, X represents OR1 or OH; and R1's independently represent an alkyl group having 1 to 4 carbon atoms.

Abstract: The invention provides a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method obtains a liquid polyurethane material formed from an isocyanate-terminated molecule and a curative agent. The liquid polyurethane material has a Tgel temperature and contains fluid-filled polymeric microspheres. The fluid-filled polymeric microspheres are a blend of preexpanded and unexpanded fluid-filled polymeric microspheres. The preexpanded and unexpanded fluid-filled polymeric microspheres each have a Tstart temperature where diameter of the preexpanded and unexpanded fluid-filled polymeric microspheres increases and a Tmax temperature where gas escapes to decrease diameter of the expanded and unexpanded fluid-filled polymeric microspheres. The cured polyurethane matrix contains preexpanded and expanded fluid-filled polymeric microspheres.

Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: A polishing pad has a polishing layer that is formed of a polyurethane foam having fine cells. The polyurethane foam is a reaction cured body of a chain extender and an isocyanate-terminated prepolymer which is obtained by reacting a prepolymer starting material composition that contains an isocyanate component, a high molecular weight polyol and an aliphatic diol. The high molecular weight polyol contains a polyalkylene glycol A that has a peak of the molecular weight distribution within the range of 200 to 300 and a polyalkylene glycol B that has a peak of the molecular weight distribution within the range of 800 to 1200.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of interconnected periodic recesses; wherein the plurality of interconnected periodic recesses are occupied with the second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second continuous non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Abstract: A process for chemical mechanical polishing of a substrate is provided, comprising: providing the substrate, wherein the substrate has an exposed silicon dioxide; providing a chemical mechanical polishing composition, consisting of, as initial components: water, a colloidal silica abrasive; optionally, a substance according to formula (I); a substance according to formula (II); and, optionally, a pH adjusting agent; wherein a pH of the chemical mechanical polishing composition is ?6; providing a chemical mechanical polishing pad with a polishing surface; dispensing the chemical mechanical polishing composition onto the polishing surface in proximity to an interface between the chemical mechanical polishing pad and the substrate; and, creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; wherein the substrate is polished; wherein some of the exposed silicon dioxide is removed from the substrate.

Abstract: The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad is a cast polyurethane polymeric matrix formed from an isocyanate-terminated molecule and a curative agent. The cast polyurethane polymeric matrix contains 4.2 to 7.5 weight percent fluid-filled microspheres in the isocyanate-terminated molecule. The fluid-filled-microspheres is polymeric and has an average diameter of 10 to 80 ?m and the polishing pad having a conditioner sensitivity (CS) of 0 to 2.6.

Abstract: A chemical mechanical polishing method is provided comprising: providing a substrate, wherein the substrate comprises a silicon oxide and a silicon nitride; providing a polishing slurry; providing polishing pad, comprising: a polishing layer having a composition that is a reaction product of ingredients, comprising: a polyfunctional isocyanate and an amine initiated polyol curative; wherein the stoichiometric ratio of the amine initiated polyol curative to the polyfunctional isocyanate is selected to tune the removal rate selectivity of the polishing layer; creating dynamic contact between the polishing surface and the substrate; dispensing the polishing slurry on the polishing pad at or near the interface between the polishing surface and the substrate; and, removing at least some of the silicon oxide and the silicon nitride from the substrate.

Abstract: A method of making a polishing layer for polishing a substrate is provided, comprising: providing a liquid prepolymer material; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to undergo a reaction to form a cured material, wherein the reaction is allowed to begin ?24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A method of making a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate is provided, comprising: providing a liquid prepolymer material; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a carbon dioxide atmosphere for an exposure period to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to undergo a reaction to form a cured material, wherein the reaction is allowed to begin ?24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A method for producing a laminated polishing pad, which is free from warpage and does not cause peeling between a polishing layer and a cushion layer during polishing, includes the steps of: laminating a hot-melt adhesive sheet to a surface of a cushion layer with a base material in which a thermoplastic resin base material is provided peelably on one surface of the cushion layer, on which the thermoplastic resin base material is not provided; heating the laminated hot-melt adhesive sheet to be melted or softened; laminating a polishing layer on the melted or softened hot-melt adhesive to prepare a laminate; cutting the laminate to the size of the polishing layer to prepare a laminated polishing sheet; and peeling the thermoplastic resin base material from the laminated polishing sheet.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a continuous non-fugitive polymeric phase and a discontinuous non-fugitive polymeric phase; wherein the continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the discontinuous non-fugitive polymeric phase; wherein the continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the discontinuous non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Abstract: The invention provides a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method obtains a liquid polyurethane material formed from an isocyanate-terminated molecule and a curative agent. The liquid polyurethane material contains 4.2 to 7.5 weight percent fluid-filled polymeric microspheres in the isocyanate-terminated molecule. The fluid-filled polymeric microspheres are a blend of preexpanded and unexpanded fluid-filled polymeric microspheres. The liquid polyurethane material contains a blend of preexpanded and unexpanded fluid-filled polymeric microspheres having a relative viscosity ? ? 0 of 1.1 to 7. Then the liquid polyurethane material solidifies into a polyurethane matrix that contains preexpanded and expanded fluid-filled polymeric microsphere for forming the polishing pad.