Abstract: Described are skin care compositions comprising an aqueous dispersion comprising a metallocene catalyzed polyolefin, an ethylene acrylic acid copolymer, or a combination thereof.

Abstract: The present invention relates to a coating composition, especially, relates to an aqueous coating composition with improved liquid stain repellency, it has a fraction of critical pigment volume concentration of from 35% to 110%, and comprises (i) pigment composition, including 15 wt. %-100 wt. %, in percentage by weight based on the dry weight of the pigment composition, polymer-encapsulated pigment; and 0-85 wt. %, in percentage by weight based on the dry weight of the pigment composition, un-encapsulated pigment; and (ii) 0.01 wt. %-5 wt. %, in percentage by dry weight based on the wet weight of the aqueous coating composition, at least one paraffin wax emulsion.

Abstract: A method of manufacturing polishing layers having a window for use in chemical mechanical polishing pads is provided, wherein a plurality of polishing layers having an integral window are derived from a cake, wherein the formation of density defects in the cake and the surface roughness of the polishing layers formed are minimized.

Abstract: A process for treating coking wastewater contains the steps of passing the coking wastewater in such an order through coagulation, particles removal, and ion-exchange resin.

Abstract: There is provided a powder composition comprising a collection of particles (I) having median particle diameter of 10 micrometers to 200 micrometers, wherein each of said particles (I) comprises (a) a covering of a fatty compound having melting point of 50° C. to 110° C. and (b) one or more inner particles (II) comprising one or more complex that contains a cyclopropene compound molecule or a portion of a cyclopropene compound molecule encapsulated in a molecule of a molecular encapsulating agent. Also provided is a slurry comprising water and such a powder. Also provided is a method of contacting plants or plant parts with such a slurry.

Abstract: A method for polishing a silicon wafer is provided, comprising: providing a silicon wafer; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.

Abstract: A switching regulator has an output stage which, with an output switch element, an inductor, a rectifying element, and a smoothing element, generates an output voltage from an input voltage, a divided voltage generator which generates a divided voltage from a switch voltage generated at one terminal of the rectifying element, a selector which outputs one of the divided voltage and a fixed voltage in accordance with a switching signal as a select voltage, a zero-cross comparator which monitors the select voltage to generate a zero-cross detection signal, and a controller which generates the switching signal in accordance with the necessity of monitoring the zero-cross of an inductor current and which performs on/off control of the output switch element reflecting the zero-cross detection signal.

Abstract: Silver electroplating baths having certain sulfide compounds and methods of electrodepositing a silver-containing layer using these baths are disclosed. Such electroplating baths are useful to provide silver-containing solder deposits having reduced void formation and improved within-die uniformity.

Abstract: A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, and the method includes a step of embedding a first metal plug and a second metal plug in an insulating layer; a step of forming a covering layer that covers at least the second metal plug while securing apart that comes into electric contact with the first metal plug; a step of forming a deposit structure by sequentially depositing a material for the lower electrode, a material for the ferroelectric film, and a material for the upper electrode after forming the covering layer; and a step of forming the ferroelectric capacitor by etching and removing other parts except a part of the deposit structure such that the part of the deposit structure remains on the first metal plug.

Abstract: A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.

Abstract: Provided are photoresist developer compositions that include a mixture of organic solvents. Also provided are methods of forming photolithographic patterns using negative tone development, coated substrates and electronic devices formed by the methods. The methods find particular applicability in the manufacture of electronic devices.

Abstract: A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device, and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block.

Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: A class-AB amplifier has upper side and lower side transistors, a linear driver, upper side and lower side idlers, upper side and lower side detection current generators, and an off driver. The upper side and lower side idlers bias upper side and lower side gate voltages by generating upper side and lower side bias currents so as to turn on the upper side and the lower side transistors at the same time in the crossover region between an input voltage and a reference voltage respectively. The upper side detection current generator and the lower side detection current generator generates upper side and lower side detection currents in accordance with upper side and lower side bias currents respectively.

Abstract: The present invention relates to innovative materials which are reversibly crosslinkable by means of a thermoreversible mechanism and/or whose viscosity is reversibly adjustable. Through the use of bishydrazones or conjugated bis-Schiff bases as diene components in aza-Diels-Alder reactions, functional materials are generated that feature controllable viscosity and/or reversible crosslinking.

Abstract: An optical communication module includes an optical semiconductor element. The element includes an optical functional region having a light receiving function or a light emitting function, a first transmission layer transmissive to light emitted from the optical functional region or light received by the optical functional region, and a wiring layer stacked on the first transmission layer and constituting a conduction path to the optical functional region. The communication module also includes a second transmission layer transmissive to the light and disposed to cover the optical semiconductor element, and a first resin member stacked on the second transmission layer. The communication module is formed with a fixing hole for fixing an optical fiber. The fixing hole includes a bottom face provided by the second transmission layer, and an opening formed in an outer surface of the first resin member.

Abstract: According to the present disclosure, a manufacturing method of a fine wiring pattern is disclosed. The manufacturing method includes preparing a support member, forming a first layer on the support member by thick-film printing, and forming a second layer including Ag on the first layer by the thick-film printing. The method also includes forming a predetermined fine wiring pattern by performing an etching process upon the first layer and the second layer.

Abstract: Disclosed herein is a graft block copolymer comprising a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety that comprises a halocarbon moiety, a silicon containing moiety, or a combination of a halocarbon moiety and a silicon containing moiety; a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to undergo acid-catalyzed deprotection causing a change of solubility of the graft block copolymer in a developer solvent.

Abstract: The present invention is a multilayered composite comprising porous metal oxide particles that are covalently bonded by way of inorganic ether groups to one or more sites of a first polyhydroxyl-functionalized polymer. This first polymer is in turn covalently bonded by way of inorganic ether groups to one or more sites of a second polyhydroxyl-functionalized polymer. The multilayered composites can be prepared by contacting porous inorganic-oxide particles with a sufficient amount of OH-reactive crosslinking agent to form metal oxide particles imbibed with the crosslinking agent, and then contacting the inorganic-oxide particles with a solution of polyhydroxyl-functionalized polymer under reactive conditions.

Abstract: Polymerized negative acting photoresists are removed from substrates at relatively low temperatures and fast stripping times using aqueous based alkaline solutions.