Abstract: A capacitive pressure sensor includes: a semiconductor substrate having a reference pressure chamber formed therein; a diaphragm which is formed in a front surface of the semiconductor substrate and has a ring-like peripheral through hole penetrating between the front surface of the semiconductor substrate and the reference pressure chamber and defining an upper electrode and a plurality of central through holes; a peripheral insulating layer which fills the peripheral through hole and electrically isolates the upper electrode from other portions of the semiconductor substrate; and a central insulating layer which fills the central through holes.

Abstract: A molding compound comprises a copolymer (I)a), produced by polymerization of 90-100% by weight methylmethacrylate, styrene and malic acid anhydride, and optionally 0-10% by weight additional monomers which can be copolymerized with methylmethacrylate, a (co)polymer (II)b), produced by polymerization of 80-100% by weight methylmethacrylate and optionally 0-20% by weight additional monomers which can be copolymerized with methylmethacrylate, and has a solution viscosity in chloroform at 25° C. (ISO 1628 Part 6) of 50 to 55 ml/g, as well as c) optional conventional additives, auxiliary agents and/or fillers. The molding compound is characterized in that the copolymer (I) has a solution viscosity in chloroform at 25° C. (ISO 1628 Part) of 55 ml/g or less. Also disclosed are moldings produced by thermoplastic processing of the molding compound and their uses.

Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.

Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

Abstract: A decoupling capacitor cell includes: a first decoupling capacitor formed by only a pMOS transistor; and a second decoupling capacitor formed by two metal layers. The decoupling capacitor cell is arranged in an unused region not occupied by basic cells in a cell-based IC and is connected to a power wiring and a ground wiring.

Abstract: A semiconductor device includes a semiconductor layer with a trench dug downward from its surface, a source region formed on a surface layer portion adjacent to a first side of the trench in a prescribed direction, a drain region formed on the surface layer portion, adjacent to a second side of the trench opposite to the first side in the prescribed direction, a first insulating film on the bottom surface and the side surface of the trench, a floating gate stacked on the first insulating film and opposed to the bottom surface and the side surface of the trench through the first insulating film, a second insulating film formed on the floating gate, and a control gate at least partially embedded in the trench so that the portion embedded in the trench is opposed to the floating gate through the second insulating film.

Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n+ emitter region and an n? drain region facing each other in the depth direction of the looped trench across a p-type base region; a p-type floating region formed on the side of the looped trench opposite to the FET structure; and an emitter connecting part that is electrically connected to the n+ emitter region and a trench gate provided in the same trench, the emitter connecting part and the trench gate being insulated from each other by the looped trench. The trench gate faces the FET structure, and the emitter connecting part faces the p-type floating region, across an insulating film.

Abstract: The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer.

Abstract: A photoacid generator compound has formula (1) wherein n is zero or 1; and R1-R6 are each independently hydrogen, halogen, or unsubstituted or substituted C1-20 linear or branched alkyl, C1-20 cycloalkyl, C6-20 aryl, C3-20 heteroaryl, or an acid-generating group having the structure *?L-Z?M+] wherein L is an unsubstituted or substituted C1-50 divalent group; Z? is a monovalent anionic group; and M+ is an iodonium or sulfonium cation. Geminal R groups can combine to form a ring with the carbon to which they are attached, as long as no more than two such rings are formed. At least one of R1-R6 includes the acid-generating group or two germinal R groups combine to form the acid-generating group. Also described are a photoresist composition incorporating the photoacid generator compound, a coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using a layer of the photoresist composition.

Abstract: Provided is a semiconductor device which includes a bonding wire, one end of which is connected to a bipolar device, the other end of which is connected to a conductive member, and the center of which is connected to a unipolar device, said semiconductor device being capable of improving the reliability of wire bonding. A package (4) includes a die pad (61), a source lead (63), a first MOSFET (11), and a first Schottky barrier diode (21). A source electrode (11S) of the first MOSFET (11), an anode electrode (21A) of the first Schottky barrier diode (21), and the source lead (63) are electrically connected by the bonding wire (31), one end of which is bonded to the source electrode (11S) of the first MOSFET (11), the other end of which is bonded to the source lead (63), and the center of which is bonded to the anode electrode (21A) of the first Schottky barrier diode (21).

Abstract: A semiconductor device includes: a first output unit configured to output a first phase; a second output unit configured to output a second phase different from the first phase, the second output unit being disposed to be stacked on the first output unit; and a controller configured to control the output units.

Abstract: A method of manufacturing a chip resistor includes forming a resistor assembly in which a conductive member including portions separated from each other in a first direction is provided in a resistance body member; and dividing the resistor assembly into chip resistors, each including a chip-shaped resistance body formed by a part of the resistance body member, a pair of main electrodes formed by a part of the conductive member and separated from each other in the first direction, and a pair of sub-electrodes formed by a part of the conductive member, separated from each other in the first direction, and adjacent to the main electrodes in a second direction perpendicular to the first direction with concave portions recessed in the first direction interposed therebetween, by punching.

Abstract: A switching power supply device has a switching controller adapted to generate an output voltage from an input voltage by turning on and off a switching device by a non-linear control method according to a comparison signal and a timer signal, a main comparator adapted to generate the comparison signal by comparing a feedback voltage based on the output voltage with a predetermined reference voltage, a timer adapted to output the timer signal as a one-shot pulse when a predetermined fixed period elapses after the switching device is turned from on to off or vice versa, and a reverse current detector adapted to detect a reverse current to the switching device to forcibly turn off the switching device. The timer and the reverse current detector are turned on at a pulse edge in the comparison signal, and are turned off on ending their respective operation.

Abstract: A motor drive device has: a power supply line to which a power supply voltage is applied; a ground line to which a ground voltage is applied; and a first motor driver that, when the power supply voltage is normal, rotates an N-phase first motor (where N is an integer of 2 or more) by using the supply voltage and, when the power supply voltage is abnormal, generates a rectified voltage from phase voltages of different phases appearing while the first motor is idling to regenerate the rectified voltage to the power supply line. The first motor driver, when generating the rectified voltage, synchronously rectifies the phase voltages of the different phases according to the results of their comparison with the rectified voltage and the ground voltage. The first motor driver is structured so as to rectify the phase voltages of the different phases synchronously in accordance with results of comparison between the phase voltages of the difference phases, the rectified voltage, and the ground voltage.

Abstract: A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.

Abstract: A voltage amplifier circuit (300) comprises: an input voltage generating unit (302) that generates an input voltage (VL1) based on a set value (SL); an operational amplifier (303) that amplifies the input voltage (VL1) such that the input voltage (VL1) becomes equal to a feedback voltage (VL3), thereby generating an output voltage (VL2); a feedback resistor unit (304) that performs a voltage division between the output voltage (VL2) applied to one end of the feedback resistor unit and a reference voltage (VL4) applied to the other end of the feedback resistor unit, thereby generating the feedback voltage (VL3); a selector control unit (305) that generates a selector control signal (SS) based on the set value (SL); and a selector (306) that selects, based on the selector control signal SS, the reference voltage (VL4) from a plurality of candidates (GND/VR).

Abstract: An LED lamp (A1) includes LED chips (21) and a heat dissipation member (3) that supports the LED chips (21), and the heat dissipation member (3) includes an LED mount (31) on which the LED chips (21) are mounted, and a slope portion (32) extending from the LED mount (31) opposite a main emission direction of the LED chips (21) and in a direction inclined with respect to the main emission direction. Such a configuration allows a wider range to be illuminated.

Abstract: Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board.

Abstract: A leak current absorption circuit for absorbing a leak current from an output transistor includes a switch connected to a grounding node on one end, a constant voltage circuit connected between the other end of the switch and an output node, a switch-operating circuit connected between the output node and the grounding node to operate the switch based on a voltage of the output node. When the voltage of the output node becomes equal to a predetermined threshold voltage or more, the switch-operating circuit turns on the switch to clamp the voltage of the output node by allowing at least a portion of the leak current from the output transistor flow to the grounding node.