Abstract: An LED lamp A1 includes a plurality of LED modules 1 and a substrate 2 on which the LED modules 1 are mounted in a row. A light guide 3 covering the LED modules 1 is provided on the substrate 2. The light guide 3 is held in close contact with each of the LED modules. With this arrangement, a proper amount of light is obtained with the use of a smaller number of LED modules 1 or with less power consumption.

Abstract: A transmission circuit transmits an ultrasonic signal from an ultrasonic vibrator by driving a terminal voltage of the ultrasonic vibrator using a first pulse signal and then further driving the terminal voltage using a second pulse signal having an opposite phase to the first pulse signal. At least one of a pulse number of the second pulse signal and a pulse level of the terminal voltage is arbitrarily set.

Abstract: Seal a fenestration opening that contains a gap having a width of greater than 1.6 millimeters by providing a dispersion having the following components dispersed in an aqueous phase: (i) a film-forming polymer binder having a glass transition temperature in a range of ?100 degrees Celsius to ?20 degrees Celsius; (ii) a shear thinning rheology modifier at a concentration sufficient to cause the dispersion to have a Brookfield viscosity greater than 300,000 centiPoise as measured using spindle #3 at 0.3 revolutions per minute; and (iii) optionally, a filler; and then spraying the dispersion directly onto the building elements within the fenestration opening so as to form a continuous coating over the building elements and gap within the fenestration opening; wherein there is an absence of reinforcement or sealing material filling or spanning the gap prior to spraying the dispersion over the gap.

Abstract: A comparator compares a first input voltage and a second input voltage to generate a comparative output depending on a result of the comparison. The comparator includes a first input terminal configured to receive the first input voltage, a second input terminal configured to receive the second input voltage, a differential pair including a first input transistor whose control terminal is connected with the first input terminal and a second input transistor whose control terminal is connected with the second input terminal, a tail current source configured to supply a tail current to the differential pair, and a load circuit connected to the first input transistor and the second input transistor, and the tail current source increases the tail current, as the first input voltage approaches the second input voltage, depending on the first input voltage.

Abstract: A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

Abstract: The method of manufacturing a semiconductor device according to the present invention includes: an insulating layer forming step of forming an insulating layer made of an insulating material containing Si and O; a groove forming step of forming a groove in the insulating layer; a metal film applying step of covering the inner surface of the groove with a metal film made of MnOx (x: a number greater than zero) by sputtering; and a wire forming step of forming a Cu wire made of a metallic material mainly composed of Cu on the metal film.

Abstract: A recording material including a support and disposed thereon at least one layer including certain core/shell polymeric particles, the particles having, when dry, at least one void; and an opacity reducer is provided. A method for providing an image using the recording sheet is also provided.

Abstract: The semiconductor device according to the present invention has an n-channel output transistor wherein an input voltage is impressed on a drain, and a pulsed switching voltage that corresponds to a switching drive of the transistor is brought out from a source; a bootstrap circuit for generating a boost voltage enhanced by a predetermined electric potential above the switching voltage; an internal circuit for receiving a supply of the boost voltage to generate a switching drive signal, and supplying the signal to a gate of the output transistor; an overvoltage protection circuit for monitoring an electric potential difference between the switching voltage and the boost voltage, and generating an overvoltage detection signal; and a switching element for establishing/blocking electrical conduction between the internal circuit and the end impressed with the boost voltage, in accordance with the overvoltage detection signal.

Abstract: A semiconductor device (A1) includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), a trench (3), an insulating layer (5), a gate electrode (41), and an n-type semiconductor region (14). The p-type semiconductor layer (13) includes a channel region that is along the trench (3) and in contact with the second n-type semiconductor layer (12) and the n-type semiconductor region (14). The size of the channel region in the depth direction x is 0.1 to 0.5 ?m. The channel region includes a high-concentration region where the peak impurity concentration is approximately 1×1018 cm?3. The semiconductor device A1 thus configured allows achieving desirable values of on-resistance, dielectric withstand voltage and threshold voltage.

Abstract: A charge control device includes a control circuit configured to monitor a charge voltage and a charge current of a battery and perform output feedback control upon the charge voltage and the charge current to thereby achieve constant voltage charge or constant current charge of the battery; and an adjusting circuit configured to adjust the output feedback control of the control circuit based on charge state information of the battery obtained by a gas gauge device.

Abstract: Seal a fenestration opening that contains a gap having a width of greater than 1.6 millimeters by providing a dispersion having the following components dispersed in an aqueous phase: (i) a film-forming polymer binder having a glass transition temperature in a range of ?100 degrees Celsius to ?20 degrees Celsius; (ii) a shear thinning rheology modifier at a concentration sufficient to cause the dispersion to have a Brookfield viscosity greater than 300,000 centiPoise as measured using spindle #3 at 0.3 revolutions per minute; and (iii) optionally, a filler; and then spraying the dispersion directly onto the building elements within the fenestration opening so as to form a continuous coating over the building elements and gap within the fenestration opening; wherein there is an absence of reinforcement or sealing material filling or spanning the gap prior to spraying the dispersion over the gap.

Abstract: An LED lighting device A1 includes a plurality of LED chips 32, an LED unit 2 in which the LED chips 32 are mounted, and a mount 1 holding the LED unit 2. This arrangement allows the appearance or structure of the LED lighting device to be adapted for various applications. For instance, the LED lighting device may be mounted on an indoor ceiling to illuminate the floor surface or an upper part of a wall surface.

Abstract: A semiconductor device of the present invention includes a semiconductor chip; an internal pad for electrical connection formed on a surface of the semiconductor chip; a stress relaxation layer formed on the semiconductor chip and having an opening for exposing the internal pad; an under-bump layer formed so as to cover a face exposed in the opening on the internal pad, an inner face of the opening and a circumference of the opening on the stress relaxation layer; a solder terminal for electrical connection with outside formed on the under-bump layer; and a protective layer formed on the stress relaxation layer, encompassing a periphery of the under-bump layer and covering a side face of the under-bump layer.

Abstract: A digital filter is configured to convert, into a digital value, the duty ratio of a control signal subjected to pulse width modulation according to a target toque to be set for a fan motor to be driven. A sampling circuit is configured to perform sampling of the output value of the digital filter at a sampling timing that is asynchronous with respect to the cycle of the control signal, so as to generate a torque instruction value. A driving circuit is configured to drive the fan motor according to the torque instruction value thus generated.

Abstract: A method for pretexturing a polishing surface of a chemical mechanical polishing layer is provided.

Abstract: A process for producing a catalyst for the (amm)oxidation of alkanes comprises calcination of a crystalline mixed metal oxide catalyst partially or wholly in the presence of steam.

Abstract: A sensor IC of the present invention is provided with plurality of light receiving portions arranged in a row along a primary scanning direction and including a first light receiving portion for receiving light of a first wavelength, a second light receiving portion for receiving light of a second wavelength different from the first wavelength, and a third light receiving portion for receiving light of a third wavelength different from the first wavelength and the second wavelength. The sensor IC further includes a control circuit that outputs a first electric signal corresponding to light of the first wavelength received by the first light receiving portion, a second electric signal corresponding to light of the second wavelength received by the second light receiving portion, and a third electric signal corresponding to light of the third wavelength received by the third light receiving portion.

Abstract: A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed

Abstract: A process for manufacturing silver nanowires is provided, comprising: providing a silver ink core component containing ?60 wt % silver nanoparticles dispersed in a silver carrier; providing a shell component containing a film forming polymer dispersed in a shell carrier; providing a substrate; coelectrospinning the silver ink core component and the shell component depositing on the substrate a core shell fiber having a core and a shell surrounding the core, wherein the silver nanoparticles are in the core; and, treating the silver nanoparticles to form a population of silver nanowires, wherein the population of silver nanowires exhibit an average length, L, of ?60 ?m.

Abstract: The invention provides a semiconductor storage device which can restrain the uneven high voltage applied to the storage unit and can provide the high voltage with high precision. The semiconductor storage device includes a storage unit array, a Y decoder circuit, a X decoder circuit, a sense amplifier circuit, a Y gate circuit, a high voltage generating circuit, a high voltage regulator circuit, and a voltage adjusting circuit. The voltage modifying data for adjusting the potential of the anode of the zener diode so as to adjust the high voltage applied to the storage unit array is written into the storage unit array. The voltage modifying data is used to adjust voltage by the voltage adjusting circuit.