Abstract: A curable phenoxyphenyl polysiloxane composition is disclosed. A cured phenoxyphenyl polysiloxane composition is further disclosed, along with a method of making that cured phenoxyphenyl polysiloxane composition from the curable phenoxyphenyl silicon composition. An encapsulated semiconductor device, and a method of making that encapsulated semiconductor device by coating a semiconductor element of a semiconductor device with cured phenoxyphenyl polysiloxane are further disclosed.

Abstract: A semiconductor device in which a semiconductor chip, a lead frame and metal wires for electrically connecting the lead frame are sealed with sealing resin. The lead frame has a plurality of lead terminal portions, a supporting portion for supporting the semiconductor chip, and hanging lead portions supporting the supporting portion. Each of the lead terminal portions adjacent to the hanging lead portion is a chamfered lead terminal portion having, at its head, a chamfered portion formed substantially in parallel with the hanging lead portion so as to avoid interference with the hanging lead portion.

Abstract: A first switch is arranged between a judgment unit and a signal line. The first switch is turned on during a period in which the judgment unit judges a device, after which the first switch is turned off. A second switch is turned off during a period in which the judgment unit judges the device, after which the second switch is turned on. The signal line connects a communication interface port, which allows various different kinds of devices to be connected, and a communication terminal of a processor configured to perform data communication with the device. The judgment unit monitors the electrical state of the signal line, and judges the device connected to the port.

Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

Abstract: A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

Abstract: The present invention provides a coating composition, a process for producing the same, one or more coating layers derived therefrom, and articles comprising one or more such coating layers. The coating composition according to the present invention comprises: (a) from 10 to 90 percent by weight of an aqueous, high-solid, solvent-free alkyd dispersion comprising: (i) from 40 to 70 percent by weight of one or more alkyds based on the total weight of the dispersion, wherein each said one or more alkyds has an acid value of less than 20 and a molecular weight (Mn) in the range of greater than 1000 Dalton; (ii) from less than 10 percent by weight of one or more surfactants, based on the total weight of the dispersion; and (iii) from 30 to 55 percent by weight of water, based on the total weight of the dispersion; wherein said aqueous, high-solid, solvent-free alkyd dispersion has an average particle size diameter in the range of from 0.

Abstract: A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Abstract: A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being connected to a surface of an SiC epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall. Furthermore, an edge portion of the bottom wall of each of the trapezoidal trenches is formed to be in the shape bent towards the outside of the trapezoidal trench in the manner that a radius of curvature R satisfies 0.01<L<R<10 L (1) (in the expression (1), L represents the straight-line distance between the edge portions opposite to each other in a width direction of the trench).

Abstract: The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

Abstract: A driving device comprises a first transistor (B13), a second transistor (B14), and a resistance element. The first transistor (B13) has one terminal receiving a pulsed current and a control terminal connected to the one terminal. The second transistor (B14) has one terminal connected to at least one load, the other terminal connected to a reference potential together with the other terminal of the first transistor (B13), and a control terminal connected to the control terminal of the first transistor (B13). The resistance element is connected between the control terminal of the first transistor (B13) and the other terminal of the first transistor (B13).

Abstract: A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under a gaseous atmosphere for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.

Abstract: Acrylic materials with antimicrobial activity are tumble blended, melted and extruded through an extruder. The resulting polymer compounds include an acrylic resin, such as methylmethacrylate polymers, copolymers and multipolymers, and blends thereof, silver-containing antimicrobial additives; and optional additives such as impact modifiers, flow promoters, stabilizers and coloring agents. The properties of the acrylic materials, especially the antimicrobial performance, are strongly dependent on the manufacturing process conditions, including feed resins pre-drying, residual moisture content, screw speed and melt temperature. The materials composition and manufacturing procedures are equally significant.

Abstract: Described are suncare compositions comprising (a) one or more fully soluble polymer comprising, as polymerized units, (i) 30% to 75% by weight, based on the weight of said polymer, one or more monomer that has refractive index of 1.490 or higher, (ii) 1% to 30% by weight, based on the weight of said polymer, one or more acid-functional monomer, and (iii) 5% to 69% by weight, based on the weight of said polymer, one or more additional monomer, and (b) at least one suncare active.

Abstract: A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; annealing the film in a gaseous atmosphere containing ?20 wt % oxygen; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.

Abstract: A red phosphor is provided. Also provided is a lighting apparatus containing a red phosphor.

Abstract: Provided are polymers and photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: The camera according to the present invention has an imaging unit, a sensor having a quantum efficiency of 60% or higher in a visible light range for detecting a focal point adjustment state in the imaging unit, and a control unit for outputting a control signal for adjusting the focal point on the imaging unit on the basis of the output from the sensor.

Abstract: The instant invention provides an aqueous dispersion, a coating composition, coating layers and coated article made therefrom.

Abstract: A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

Abstract: A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer.