Abstract: A 3D semiconductor memory device includes a peripheral circuit structure, an intermediate insulating layer and a cell array structure. The cell array structure includes a first substrate including a cell array region and a connection region; a stack structure comprising electrode layers and electrode interlayer insulating layers alternately stacked on the first substrate; a planarization insulating layer covering an end portion of the stack structure on the connection region; and a first through-via penetrating the planarization insulating layer, the first substrate and the intermediate insulating layer. The first through-via connects one of the electrode layers to the peripheral circuit structure. The first through-via includes a first and second via portion integrally connected to each other. The first via portion penetrates the planarization insulating layer and has a first width. The second via portion penetrates the intermediate insulating layer and has a second width greater than the first width.

Abstract: A semiconductor package having a thinner shape and including an antenna is provided. A semiconductor package comprises a first substrate, a second substrate on the first substrate and including a first face facing the first substrate and a second face opposite to the first face, a pillar extending from the second face of the second substrate to the first substrate, and a first semiconductor chip on the second face of the second substrate and connected to the pillar. The second substrate may include an antenna pattern, and the antenna pattern may be connected to the first semiconductor chip, and may be on the second face of the second substrate such that the antenna pattern is isolated from direct contact with the first semiconductor chip.

Abstract: A semiconductor device having a package on package (PoP) structure, in which a fine pitch between package substrates is implemented, a total height of a package is reduced, and reliability is enhanced. The semiconductor package includes a first package substrate including a first body layer and a first passivation layer, a first semiconductor chip on the first package substrate, a second package substrate on the first package substrate, the second package substrate including a second body layer and a second passivation layer, a first connection member on the first package substrate outside the first semiconductor chip, and a gap filler filled between the first package substrate and the second package substrate, wherein the first package substrate includes a first trench, the second package substrate includes a second trench, and the first semiconductor chip is disposed between the first trench and the second trench.

Abstract: A semiconductor package may include an image sensor chip, a transparent substrate spaced apart from the image sensor chip, a joining structure in contact with a top surface of the image sensor chip and a bottom surface of the transparent substrate, on an edge region of the top surface of the image sensor chip, and a circuit substrate electrically connected to the image sensor chip. The image sensor chip may include a penetration electrode which penetrates at least a portion of an internal portion of the image sensor chip, and a terminal pad, which is on the edge region of the top surface of the image sensor chip and is electrically connected to the penetration electrode. The joining structure may include a spacer and an adhesive layer. The joining structure may overlap the terminal pad. The spacer is between the transparent substrate and the terminal pad.

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first horizontal direction on the substrate, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, a source/drain region on at least one side of the gate electrode, a source/drain contact extending into the source/drain region and including a filling layer and a barrier layer along a sidewall of the filling layer, and a silicide layer between the source/drain region and the filling layer, the silicide layer including a first sidewall in contact with the filling layer and a second sidewall in contact with the source/drain region, wherein the barrier layer is not between the filling layer and the source/drain region.

Abstract: A portable device includes: a modem configured to perform power line communication with a charger external to the portable device; and a charging circuit configured to, from first power provided by the charger, charge a battery and supply power to an electrical load, wherein the charging circuit is further configured to cut off the supply of the first power to the electrical load and supply second power from the battery to the electrical load.

Abstract: A wide band matching network for power amplifier impedance matching, the wide band matching network comprising: a power amplifier transistor connected to an output network; the output network including: a series capacitor; an on-chip transformer connected to the capacitor in series, wherein the transformer and the capacitor act as a second order filter; and a port connected to the capacitor and a receiver switch.

Abstract: Provided is an electronic device including at least one communication module and at least one processor. The at least one processor is configured to: establish, with an external device, a schedule including a time interval for a first frequency band and a time interval for a second frequency band to perform data communication with the external device supporting the first frequency band and the second frequency band, the first and second frequency bands having different coverage areas; determine a ratio of the time interval for the second frequency band based on a result of monitoring traffic in the first frequency band and the second frequency band according to the schedule indicates that traffic of the second frequency band having a smaller coverage area is present; and update the schedule to adjust the time intervals for the first frequency band and the second frequency band based on the determined ratio.

Abstract: An image decoding method may include: receiving a bitstream generated as a result of encoding an image sequence; obtaining, from a sequence parameter set of the bitstream, a first tool set index indicating a tool allowed to decode the bitstream among a plurality of tools; obtaining, from the sequence parameter set, tool flags based on the tool flags, identifying a tool that has been used to encode the image sequence among the plurality of tools; and reconstructing the image sequence based on the identified tool, wherein values of the tool flags are set according to a value of the first tool set index.

Abstract: A ring-type wearable electronic device is provided.

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.

Abstract: A semiconductor device includes a substrate including first and second regions, first and second active patterns provided on the first and second regions, respectively, a pair of first source/drain patterns on the first active pattern and a first channel pattern therebetween, a pair of second source/drain patterns on the second active pattern and a second channel pattern therebetween, first and second gate electrodes respectively provided on the first and second channel patterns, and first and second gate insulating layers respectively interposed between the first and second channel patterns and the first and second gate electrodes. Each of the first and second gate insulating layers includes an interface layer and a first high-k dielectric layer thereon, and the first gate insulating layer further includes a second high-k dielectric layer on the first high-k dielectric layer.

Abstract: Provided is a method performed by a user equipment (UE) in a wireless communication system. The method includes: receiving, from a source base station, a first radio resource control (RRC) reconfiguration message including configuration information indicating reconfiguration with sync, identification information of a bearer, and dual active protocol stack (DAPS) configuration information indicating that the bearer is configured as a DAPS bearer; reconfiguring a packet data convergence protocol (PDCP) entity of the UE with respect to the bearer; switching uplink data transmission from the source base station to a target base station; and releasing the source base station.

Abstract: An electronic device may include: a first communication module; a second communication module; a display; and a processor, wherein the processor may be set so that, when an indication of a first image having metadata including shared information is selected, at least one object, information about at least one shared external electronic device related to the at least one object, and the first image including a share button for image transmission are displayed on the display, and the first image is transmitted to a first shared external electronic device selected from among the at least one shared external electronic device. Various other embodiments can be provided.

Abstract: The disclosure relates to a 5G or 6G communication system for supporting higher data rates after a 4G communication system such as LTE. A data transmission/reception method of a UE in a wireless communication system supporting integrated access and backhaul (IAB) communication, includes performing security processing based on security configuration for a packet data convergence protocol (PDCP) layer when transmitting and receiving data to and from an IAB node; receiving a first control message including security configuration information from the IAB node; updating the security configuration for the PDCP layer based on the security configuration information; and performing security processing on the data transmitted and received to and from the IAB node based on the updated security configuration.

Abstract: An electronic device is provided. The electronic device includes a communication circuit, a memory configured to store a learning model, and at least one processor, wherein the at least one processor is configured to obtain data related to a network situation of a base station from the communication circuit, calculate a performance indicator value related to network performance according to a performance indicator, based on the data related to the network situation, train the model, based on the performance indicator value calculated according to the performance indicator, determine an off threshold of traffic for turning off a cell, based on the trained model, and transmit the determined off threshold to the base station via the communication circuit.

Abstract: A ramp signal generating device and an image sensor for decreasing the latency of a ramp signal are provided. The ramp signal generating device may include a first circuit configured to detect a capacitance of a parasitic capacitor, a second circuit configured to charge the parasitic capacitor with a first voltage, and a third circuit configured to receive the capacitance as an input to generate a load current causing the ramp signal with a predetermined slope.

Abstract: A data transfer method, apparatus and device, and a computer-readable storage medium are provided. The method executed by a third node includes sending a first request message to a fourth node, and receiving a first response message sent by the fourth node, the first response message being indicative of connection of a first node to the fourth node through a second node. By the method, the connection of the first node to the fourth node through the second node is achieved.

Abstract: Methods and apparatuses for coverage enhancement of Msg3. A method for operating a user equipment includes receiving a system information block (SIB) that provides information mapping physical random access channel (PRACH) resources to enable or disable repetitions for a physical uplink shared channel (PUSCH) transmission in a random access procedure and a first time domain resource allocation (TDRA) table. An entry of the first TDRA table indicates a number of repetitions of a PUSCH transmission. The method further includes determining a PRACH resource for transmission of a PRACH, determining, based on the PRACH resource, a TDRA table from between the first TDRA table or a predetermined second TDRA table. No entry of the second TDRA table indicates a number of repetitions for a PUSCH transmission. The method further includes receiving a first grant scheduling transmission of a first PUSCH and transmitting the first PUSCH.