Abstract: A memory system and method are provided for performing garbage collection on blocks based on their obsolescence patterns. In one embodiment, a controller of a memory system classifies each of the plurality of blocks based on its obsolescence pattern and performs garbage collection only on blocks classified with similar obsolescence patterns. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.

Abstract: A NAND memory is provided that includes a memory cell region and a peripheral region. The peripheral region includes a shallow trench isolation trench disposed in a substrate. The shallow trench isolation trench includes a first top surface, and a second top surface. A difference between a height of the second top surface and a height of the first top surface is less than a predetermined value ?MAX.

Abstract: A temperature identification system may include temperature sensing circuitry and a temperature measurement module. The temperature sensing circuitry may include a ring oscillator that generates a ring oscillator output signal having a frequency that varies depending on an operating temperature on the ring oscillator. A frequency divider circuit may divide the frequency of the ring oscillator output signal such that two or more cycles of a noise component of supply voltage are averaged, which may reduce the impact that the noise has on the frequency of the ring oscillator output signal. In some embodiments, a regulator may supply a regulated voltage to the ring oscillator. The regulator may reduce the impact of the noise for low frequency components of the noise, while the frequency divider may reduce the impact for high frequency of the noise.

Abstract: A cluster association recognition system and related method are described. The system may identify sequences of data clusters in compilations of cluster journals. The system may generate the compilations by populating the cluster journals with cluster identifications associated with host addresses identified in host read requests. Upon receipt of future read requests, the cluster sequences may be used to identify data sets that are associated with a cluster sequence in order to identify further data sets that a host is likely to request.

Abstract: A memory system and method are provided for generating a seed value. In one embodiment, a memory system identifies a random defect in a memory die and, in accordance with the identified random defect in the memory die, generates a seed value, wherein with the generated seed value a random number can be generated. Other embodiments are provided, which can be used alone or in combination with one another.

Abstract: A memory system and method are provided for adaptive auto-sleep and background operations. In one embodiment, a controller of a memory system measures an amount of time between when the memory completes an operation and when the controller receives a command to perform another operation in the memory. The controller adjusts a time period after which the controller enters an auto-sleep mode and/or starts a background operation based on the measured amount of time. Other embodiments are disclosed.

Abstract: A non-volatile memory system may include a non-volatile memory die storing a requested data set that a host requests to be read. In response to the host request, a copy of a data set may be retrieved from the non-volatile memory die without performing error correction on an entry identifying a physical address where the data set is stored. If the data set copy matches the requested data set, the data set copy may be sent to the host. If the data set copy does not match the requested data set, then error correction may be performed on a copy of the entry to identify the correct physical address where the requested data set is stored. A copy of the requested data set may then be retrieved and sent to the host.

Abstract: The apparatus to transfer heat from memory components includes a first non-volatile memory component and a second non-volatile memory component. The apparatus includes a heat spreading material in thermal communication with the first non-volatile memory component and the second non-volatile memory component. The heat spreading material is configured to transfer heat from the first non-volatile memory component and the second non-volatile memory component.

Abstract: A memory system and method for power management are disclosed. In one embodiment, a memory system maintains a variable credit value indicating an amount of power currently available for memory operations in the memory system, the variable credit value having an upper limit that reflects a maximum power limit for the memory system. The memory system receives a command to perform a memory operation, wherein a plurality of resources are required to perform the memory operation, each resource being associated with a credit value. Prior to performing the memory operation, the memory system checks whether the variable credit value indicates that there is sufficient power available to perform the memory operation. Resource(s) required to perform the memory operation that are already being used in the memory system are not counted against the variable credit value.

Abstract: A storage device with a memory may include memory block leveling that improves data retention by considering localized temperature. A block's distance from a heat source may result in variance of data retention. The localized temperature may be used to improve data retention through a relocation, refreshing, or leveling of blocks that considers their physical location on the die and/or in the package.

Abstract: A ring with a biometric sensor is provided. In one embodiment, the ring comprises a ring body, a biometric sensor positioned in the ring body and configured to sense a biometric feature, a memory configured to store a biometric feature of an authorized user, and a controller. The controller is configured to determine whether the biometric feature sensed by the biometric sensor matches the biometric feature stored in the memory, and in response to determining that the biometric feature sensed by the biometric sensor matches the biometric feature stored in the memory, enable a function of the ring.

Abstract: Systems and methods for utilizing wear leveling windows with non-volatile memory systems are disclosed. In one implementation, a memory management module of a non-volatile memory system compares a metric reflecting wear of a memory block to a wear leveling window and determines whether a wear leveling indicator associated with the memory block restricts performing a wear leveling operation on the memory block. The memory management module performs a wear leveling operation on the memory block in response to determining that the metric reflecting wear of the memory block falls outside the wear leveling window and determining that the wear leveling indicator does not restrict performing a wear leveling operation on the memory block. After performing the wear leveling operation, the memory management module places the memory block on a free block list.

Abstract: Systems and methods for detecting a file of a predetermined size or greater are disclosed. Files may be downloaded to a storage device via a data stream. The storage device may analyze one or more aspects of the data stream, such as throughput and consistency, in order to determine whether the file is of a predetermined size or greater. In response to determining that the data stream includes a file of at least a predetermined size, the storage device may take one or more actions. One action is to store part or all of the file in a hybrid block, which is a block in non-volatile memory that is accessed (e.g., programmed and/or erased) in a different way than its designation. For example, a block originally designated for multi-level cell (MLC) storage may be programmed for single-level cell (SLC) storage, which is quicker than for MLC. In this way, the storage device may be able to store the downloaded file, with a certain throughput and consistency, without loss of data.

Abstract: A memory circuit includes an array subdivided into multiple divisions, each connectable to a corresponding set of access circuitry. A serializer/deserializer circuit is connected to a data bus and the access circuitry to convert data between a (word-wise) serial format on the bus and (multi-word) parallel format for the access circuitry. Column redundancy circuitry is connect to the serializer/deserializer circuit to provide defective column information about the array. In converting data from a serial to a parallel format, the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column. In converting data from a parallel to a serial format the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column.

Abstract: A memory system and method for differential thermal throttling are disclosed. In one embodiment, a memory system is provided comprising a memory and a controller. The controller is configured to receive a command to perform an operation in the memory and analyze the command to determine whether thermal throttling the memory system would result in an unacceptable impact on user experience. In response to determining that thermal throttling the memory system would result in an unacceptable impact on user experience, the controller executes the command. In response to determining that thermal throttling the memory system would not result in an unacceptable impact on user experience, the controller thermal throttles the memory system. Other embodiments are provided.

Abstract: Programming non-volatile memory includes applying a series of programming pulses to the memory cells as part of a coarse/fine programming process. Between programming pulses, memory cells in the coarse phase are verified for a coarse phase verify level for a target data state and memory cells in the fine phase are verified for a fine phase verify level for the target data state, both in response to a single reference voltage applied on a common word line. For a memory cell in the coarse phase that has been verified to have reached the coarse phase verify level, the memory cell will be temporarily inhibited from programming for a next programming pulse and switched to the fine phase.

Abstract: Fabrication techniques for a three-dimensional stack memory device remove the charge-trapping material from the select gate transistors and the dummy memory cells to avoid unintentional programming which increases the threshold voltage. In one approach, a stack is formed with a sacrificial material for the a) control gate layers of the select gate transistors and the dummy memory cells and the b) control gate layers of the data memory cells. A slit is formed to allow etchants to be introduced to selectively remove the sacrificial material and then the charge-trapping material for the select gate transistors and dummy memory cells. A protective layer is provided partway in the slit, or the slit is etched in two steps.

Abstract: A memory circuit includes an array subdivided into multiple divisions, each connectable to a corresponding set of access circuitry. A serializer/deserializer circuit is connected to a data bus and the access circuitry to convert data between a (word-wise) serial format on the bus and (multi-word) parallel format for the access circuitry. Column redundancy circuitry is connect to the serializer/deserializer circuit to provide defective column information about the array. In converting data from a serial to a parallel format, the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column. In converting data from a parallel to a serial format the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column.

Abstract: A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a substrate having a solder mask. A plurality of pillar bases are formed on the solder mask, and a plurality of solder pillars are applied to the pillar bases. The plurality of solder pillars support one or more semiconductor die above the substrate and the number of solder pillars prevent stresses in the one or more semiconductor die which could otherwise damage the semiconductor die.

Abstract: Techniques are provided for reducing program disturb in a 3D memory device. The techniques include compensating for a temperature dependence of program disturb. The techniques may include compensating for how program disturb depends on the location of the word line that is selected for programming. In one aspect, the voltage that is applied to the control gates drain side select transistors of unselected NAND strings is adjusted during programming based on temperature. Greater temperature compensation may be applied when the selected word line is closer to the drain side select transistors.