Abstract: A storage module and method for managing logical-to-physical address mapping are disclosed. In one embodiment, a storage module is provided comprising a memory having a plurality of wordlines and a controller. The controller is configured to use a logical-to-physical address map to convert a logical address to a physical address of a wordline. A plurality of logical addresses in the map point to a single wordline, and the single wordline contains both data associated with the plurality of logical addresses and information about where to find each of the plurality of logical addresses in the single wordline . Storing the information about where to find each of the plurality of logical addresses in the wordline itself avoids the delay and complexity of using a larger logical-to-physical address map or multiple maps.

Abstract: A memory device and method for content virtualization are disclosed. In one embodiment, a plurality of directories are created in the memory of the memory device, wherein each of the plurality of directories points to a same storage location of the digital content. In another embodiment, a first header for the digital content is stored in each of the different directories, wherein the first header comprises information about where to find the digital content in the memory. In yet another embodiment, the memory device comprises circuitry that receives an identification of a host device in communication with the memory device and reorganizes a directory structure of the memory in accordance with the identification of the host device, wherein the reorganization results in the digital content appearing to be located in a directory expected by the host device.

Abstract: A memory device and method for content virtualization are disclosed. In one embodiment, a plurality of directories are created in the memory of the memory device, wherein each of the plurality of directories points to a same storage location of the digital content. In another embodiment, a first header for the digital content is stored in each of the different directories, wherein the first header comprises information about where to find the digital content in the memory. In yet another embodiment, the memory device comprises circuitry that receives an identification of a host device in communication with the memory device and reorganizes a directory structure of the memory in accordance with the identification of the host device, wherein the reorganization results in the digital content appearing to be located in a directory expected by the host device.

Abstract: A number of techniques for determining defects in non-volatile memory arrays are presented, which are particularly applicable to 3D NAND memory, such as that of the BiCS type. Word line to word shorts within a memory block are determined by application of an AC stress mode, followed by a defect detection operation. An inter-block stress and detection operation can be used determine word line to word line leaks between different blocks. Select gate leak line leakage, both the word lines and other select lines, is consider, as are shorts from word lines and select lines to local source lines. In addition to word line and select line defects, techniques for determining shorts between bit lines and low voltage circuitry, as in the sense amplifiers, are presented.

Abstract: Systems and methods for utilizing wear leveling windows with non-volatile memory systems are disclosed. In one implementation, a memory management module of a non-volatile memory system compares a metric reflecting wear of a memory block to a wear leveling window and determines whether a wear leveling indicator associated with the memory block restricts performing a wear leveling operation on the memory block. The memory management module performs a wear leveling operation on the memory block in response to determining that the metric reflecting wear of the memory block falls outside the wear leveling window and determining that the wear leveling indicator does not restrict performing a wear leveling operation on the memory block. After performing the wear leveling operation, the memory management module places the memory block on a free block list.

Abstract: A circuit for providing a plurality of clock signals of differing frequencies includes: a phase locked loop section including a first voltage controller oscillator, connected to receive a reference clock value and generate therefrom a first voltage level, wherein the first voltage controller oscillator receives the first voltage level and generates therefrom a first clock signal; and one or more second voltage controller oscillators, each connected to receive the first voltage level, a corresponding trim value and a corresponding control voltage and derive therefrom a corresponding second clock signal.

Abstract: A memory is released for use without pre-verification of its memory blocks as being defect free. Some memory blocks are subjected to a verification process when the computer memory is in use in order to verify a minimum number of memory blocks required for high performance program operation as being defect free. The verification process continues as the computer memory is in use in order to maintain the minimum number of memory blocks required for high performance operation in the verified defect free state. A verification mode of either no verification, delayed verification, or immediate verification is applied to memory blocks used for regular performance program operation. Delayed verification is maintained until an ability to recover the stored data is going to be lost. Immediate verification can be performed using bit error rate analysis. Some verification processes are performed using aggressive programming trim and/or multiple word line sensing for faster programming.

Abstract: A host interface for a storage module may include an out-of-band (OOB) detector that is configured to detect receipt of an OOB signal using a clock signal. The clock signal may be generated by a clock generator that is activated using a counter. When an OOB signal is received, the counter may activate the clock generator. When no OOB signal is being received, the counter may wait for a predetermined time period before deactivating the clock generator.

Abstract: A method and system are disclosed for allowing access to processing resources of one or more idle memory devices to an active memory device is disclosed, where the idle and active memory devices are associated with a common host. The resources shared may be processing power, for example in the form of using a processor of an idle memory to handle some of the logical-to-physical mapping associated with a host command, or may be other resources such as RAM sharing so that a first memory has expanded RAM capacity. The method may include exchanging tokens with resource sharing abilities, operation codes and associated data relevant to the requested resources.

Abstract: A die assignment scheme assigns data, in the order it is received, to multiple memory dies with some randomness. Randomization events, such as skipping dies or reversing direction, occur at intervals, with a deterministic assignment scheme used between randomization events. Intervals between randomization events may be of random length, or of fixed length.

Abstract: A memory system comprising a non-volatile memory and a controller in communication with the non-volatile memory is disclosed. The controller may include a central processing unit (“CPU”) and an internal cache in communication with the CPU via a plurality of cache lines. The CPU is configured to utilize a first subset of the plurality of cache lines when accessing data stored in the internal cache at a first resolution. Additionally, the CPU is configured to utilize a second subset of the plurality of cache lines when accessing data stored in the internal case at a second resolution, where the first and second resolutions are different resolutions.

Abstract: A storage controller system may include a host controller that queues host commands as data transfer commands in a plurality of queue channels. The storage controller system may also include a data storage controller that selects data transfer commands for execution. The data storage controller may select all data transfer commands associated with a host command when all of the data transfer commands are located at heads of the queue channels. Alternatively, the data storage controller may select for execution data transfer commands at heads of the queue channels when associated cache areas are available to receive data, regardless of whether all of the data transfer commands associated with a host command are at the heads. The host controller may then retrieve the data in the cache areas when all of the data to be sent to the host in response to the host command is being cached.

Abstract: A storage module and method are provided for determining ready/busy status of a plurality of memory dies. In one embodiment, a bus has a ready/busy line that is shared among the plurality of memory dies, and a time-division multiplex signal on the shared ready/busy line is used to communicate the ready/busy status of each of the memory dies. In another embodiment, each of the memory dies sends its ready/busy status to the storage controller using a different one of a plurality of data lines in the bus. In yet another embodiment, each of the memory dies sends a pulse across the ready/busy line with a different pulse width. To avoid collisions, each memory die waits a different number of clock cycles before attempting to send its pulse status after determining that the shared ready/busy line is in use.

Abstract: A method of forming narrow and wide lines includes forming mandrels separated by wider gaps and narrower gaps, forming sidewall spacers on sides of the gaps, and then removing the mandrels. Subsequent anisotropic etching extends through an underlying mask layer at locations between sidewall spacers that were formed in wider gaps, to thereby separate narrow line portions of the mask layer, without extending through the mask layer at locations between sidewall spacers that were formed in narrower gaps, thereby leaving wide line portions of the mask layer under the second sidewall spacers.

Abstract: In a block-erasable nonvolatile memory array, blocks are categorized as bad blocks, prime blocks, and sub-prime blocks. Sub-prime blocks are identified from their proximity to bad blocks or from testing. Sub-prime blocks are configured for limited operation (e.g. only storing non-critical data, or data copied elsewhere, or using some additional or enhanced redundancy scheme).

Abstract: Data programmed in a block using a first set of programming parameters is read and a number of memory cells having threshold voltages in an intermediate threshold voltage range that is between ranges assigned to logic states is determined. The number is compared to a threshold number and if the number exceeds the threshold number then subsequent programming uses a second set of programming parameters.

Abstract: Data is received at a computer memory to be programmed in single-level-cell mode. A stress level of a first section of the computer memory is determined. A stress level of a second section of the computer memory is determined. The stress levels of the first and second sections of the computer memory are compared to determine which one of the first and second sections is a less stressed single-level-cell mode section of the computer memory. The data received at the computer memory is programmed in the less stressed single-level-cell mode section of the computer memory.

Abstract: A method is provided for programming a memory cell connected to a selected word line in a memory device. The method includes performing one programming pass of a multi-pass programming operation for the memory cell, wherein a first set of program pulses is applied to the selected word line during the one programming pass, determining a number of the program pulses applied to the selected word line during the one programming pass, determining a difference between the determined number of program pulses applied to the selected word line during the one programming pass and a predetermined number of program pulses, adjusting a parameter of a second set of program pulses for the another programming pass based on the determined difference, and performing the another programming pass for the set of memory cells, wherein the second set of program pulses is applied to the selected word line during the another programming pass.

Abstract: The present application is directed to systems and methods for managing data in a device for hibernation states. In one implementation, the device includes an interface and a processor. The interface is coupled with a first memory and a second memory. The processor is in communication with the first and second memories via the interface. The processor is configured to read first data from the first memory, generate image data of the data stored in the first memory based on the first data, and write to the second memory prior to the device entering an initial hibernation state the image data of the data stored in the first memory. The processor is further configured to, after the device awakes from the initial hibernation state, read the image data from the second memory, reconstruct the first data based on the image data, and write the first data to the first memory.

Abstract: A 3D NAND memory has vertical NAND strings across multiple memory planes above a substrate, with each memory cell of a NAND string residing in a different memory layer. Word lines in each memory plane each has a series of socket components aligned to embed respective floating gates of a group memory cells. In this way, the word line to floating gate capacitive coupling is enhanced thereby allowing a 4 to 8 times reduction in cell dimension as well as reducing floating-gate perturbations between neighboring cells. In one embodiment, each NAND string has source and drain switches that each employs an elongated polysilicon gate with metal strapping to enhance switching. The memory is fabricated by an open-trench process on a multi-layer slab that creates lateral grottoes for forming the socket components.