Abstract: A storage device is configured to utilize different encoding and decoding schemes in reading and writing data to different regions of a storage device based on the position of the storage regions and/or component-specific physical characteristics of the regions. Each encoding scheme may include multiple different types of encoders selected based an optimization process for each region.

Abstract: A data writing element may be configured at least with a write pole positioned adjacent a first shield along a first axis and adjacent a second shield along a second axis. The second shield may be separated from the write pole by a first gap distance on an air bearing surface (ABS) and by a second gap distance distal the ABS with the first and second gap distances meeting at a transition surface oriented parallel to the ABS.

Abstract: An apparatus includes a writer, an arrangement comprising a plasmonic near-field transducer (NFT) adjacent the writer and comprising a material having a temperature coefficient of resistance (TCR), and a lead arrangement connected to the NFT arrangement. In some configurations, the NFT arrangement includes a heat sink, and the lead arrangement is connected to the heat sink. In other configurations, the lead arrangement is connected directly to the NFT.

Abstract: A data storage system and associated method of using may generally have at least a data storage device that has independent first and second interfaces respectively connecting the data storage device to a host controller and an auxiliary controller. The auxiliary controller can be configured to provide system information to the data storage device prior to a synchronized connection being established between the data storage device and the host controller.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a memory has a plurality of solid-state non-volatile memory cells. A processing circuit is connected to the memory and configured to direct the execution of a plurality of read error recovery routines in response to at least one uncorrectable read error in a data set retrieved from the memory. The recovery routines are executed in a selected order based on an elapsed recovery time parameter for each of the recovery routines and an estimated probability of success of each of the recovery routines.

Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for a region of reduced anisotropy within a synthetic antiferromagnetic (SAF) shield. The SAF shield includes first and second layers of ferromagnetic material separated by a coupling spacer layer. A distance between the first and second layers of ferromagnetic material is greater in a region proximal to the sensor stack than in a region away from the sensor stack.

Abstract: The embodiments disclose a patterned composite magnetic layer structure configured to use magnetic materials having differing temperature and magnetization characteristics in a recording device, wherein the patterned composite magnetic layer structure includes magnetic layers, at least one first magnetic material configured to be used in a particular order to reduce a recording temperature and configured to control and regulate coupling and decoupling of the magnetic layers and at least one second magnetic material with differing temperature characteristics is configured to control recording and erasing of data.

Abstract: Sub-micron precision alignment between two microelectronic components can be achieved by applying energy to incite an exothermic reaction in alternating thin film reactive layers between the two microelectronic components. Such a reaction rapidly distributes localized heat to melt a solder layer and form a joint without significant shifting of components.

Abstract: The embodiments disclose an orientation control bias point coupled to a magnetic index mark and having a bias point offset set at predetermined coordinates configured to substantially prevent concentricity run-out.

Abstract: There is disclosed an electronics module (101) for a data storage device enclosure (100) and data storage device enclosures (100). The module comprises an enclosure connector (104) for connecting to the enclosure, at least one bay constructed and arranged to receive a data storage device (200), and a controller (102) arranged to selectively provide access to storage devices to which it is connected. The module (101) has a communications path (107) between the controller and the enclosure connector (104) by which the controller can communicate with storage devices in the enclosure. The module (101) also has a first communications path to the data storage device (200) when received in the bay by which the controller can communicate with that data storage device. The module (101) also has a second communications path to the data storage device (200) when received in the bay by which that data storage device can be accessed from outside the module.

Abstract: A readback signal from a first reader and a readback signal from a second reader are received, the first reader and the second reader configured to read two-dimensional data from at least one track of a recording media. A quality metric of the second reader is measured based on the readback signal. It is determined if the quality metric for the second reader is above a threshold. If the quality metric is above the threshold, the first reader and the second reader are used to read the data.

Abstract: Implementations described and claimed herein provide a synthetic antiferromagnetic (SAF) layer with canted pinning, wherein a down-track direction facing surface of the SAF layer has edges that are substantially parallel to pinning direction of the SAF layer.

Abstract: A data storage device may be tested during or after manufacture by a testing device that may have at least a work piece with at least one contact pad concurrently contacting bottom and sidewall surfaces of a probe tip with a centering feature of the at least one contact pad.

Abstract: Data storage systems having barriers that may reduce erasure flux and increase write-ability are provided. Data storage systems include a writing element. The writing element has a write pole with a flare region. A magnetic flux barrier is located along the write pole flare region. The magnetic flux barrier is illustratively made from an in-plane magnetically anisotropic material that has an easy plane of magnetization. In another embodiment, a data storage system includes a writing element having an air bearing surface and a shield at the air bearing surface. The shield has a magnetic permeability of approximately zero. The shield illustratively includes alternating layers of positive and negative permeabilities. The shield optionally includes a plurality of shields that may include top, bottom, and side shields.

Abstract: An apparatus includes a slider with a cavity in a trailing end of the slider. A laser is positioned in the cavity and has an output facet positioned adjacent to a first wall of the cavity. A cap is connected to the trailing end of the slider and covers the laser.

Abstract: A data storage media may have at least a multi-layer recording lamination with a predetermined coercivity. The multi-layer recording lamination can be configured to record at least one servo format mark for a plurality of data tracks with a solid immersion mirror and program a data bit on the multi-layer recording lamination with a near field transducer.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a non-volatile memory is arranged into a plurality of blocks, with each of the blocks constituting an integral plural number N of fixed-sized, multi-bit transfer units. A processing circuit retrieves at least a portion of the data stored in a selected block to a volatile memory buffer in response to a transfer unit (TU) bit map. The TU bit map is stored in a memory and provides a multi-bit sequence of bits corresponding to the N transfer units of the selected block. The values of the bits in the multi-bit sequence of bits indicate whether the corresponding transfer units are to be retrieved.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, the apparatus has a solid-state non-volatile memory and a processing circuit configured to write data to a selected location of the memory. The data are arranged in the form of multi-bit code words each comprising a user data payload and associated parity data configured to correct one or more bit errors in the user data payload. The processing circuit adjusts at least a selected one of a size of the code words, a size of the user data payloads or a size of the parity data responsive to at least a selected one of an accumulated count of access operations upon the selected location or an error rate associated with the selected location.

Abstract: A load adaptive pipeline system includes a data recovery pipeline configured to transfer data between a memory and a host. The pipeline includes a plurality of resources, one or more of the plurality of resources in the pipeline have multiple resource components available for allocation. The system includes a pipeline controller configured to assess at least one parameter affecting data transfer through the pipeline. The pipeline controller is configure to allocate resource components to the one or more resources in the pipeline in response to assessment of the at least one data transfer parameter.

Abstract: An electrical lapping guide has a body with a thickness along a wafer axis, the body comprising a layer of conductive material having a resistivity. The conductive material layer comprises a first contact region and a second contact region, the first and second contact regions configured to electrically connect the electrical lapping guide to electrical leads. A lapping edge comprises an air-bearing plane axis perpendicular to a lapping axis, and a back edge opposite the lapping edge, the back edge comprising a plurality of notches.