Abstract: A method and associated apparatus for topographically characterizing a workpiece. The workpiece is scanned with a scanning probe along a first directional grid, thereby scanning a reference surface and an area of interest subportion of the reference surface, at a variable pixel density including a first pixel density outside the area of interest and a second pixel density inside the area of interest to derive a first digital file characterizing topography of the workpiece. The workpiece is further scanned along the reference surface and the area of interest with the scanning probe along a second directional grid that is substantially orthogonal to the first directional grid and at a constant pixel density to derive a second digital file characterizing topography of the workpiece. A processor executes computer-readable instructions stored in memory that generate a topographical profile of the workpiece in relation to the first and second digital files.

Abstract: The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array and mapping a location of each measured variable resistive memory cell to form a map of the resistance state resistance values for a plurality of variable resistive memory cells within a memory array. Then a column or row is selected to be a reference column or reference row based on the map of the resistance state resistance value for a plurality of variable resistive memory cells within a memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.

Abstract: A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

Abstract: A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

Abstract: A method and apparatus for testing an array of non-volatile memory cells, such as a spin-torque transfer random access memory (STRAM). In some embodiments, an array of memory cells having a plurality of unit cells with a resistive sense element and a switching device has a row decoder and a column decoder connected to the plurality of unit cells. A test circuitry sends a non-operational test pattern through the array via the row and column decoders with a quiescent supply current to identify defects in the array of memory cells.

Abstract: An apparatus can include a disk drive controller that includes at least one repeatable run out (RRO) compensator corresponding to a RRO component, the disk driver controller configured to change a head assembly position, and to disable the at least one RRO compensator in response to the head assembly position changing from one predetermined area of a disk to at least one other predetermined area of the disk

Abstract: A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

Abstract: An apparatus includes a transducer including a plasmonic funnel having first and second ends with the first end having a smaller cross-sectional area than the second end, and a first section positioned adjacent to the first end of the plasmonic funnel, and a first waveguide having a core, positioned to cause light in the core to excite surface plasmons on the transducer.

Abstract: A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

Abstract: A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance the stability of the magnetization direction of the pinned layer.

Abstract: Nonvolatile resistive memory devices are disclosed. In some embodiments, the memory devices comprise multilayer structures including electrodes, one or more resistive storage layers, and separation layers. The separation layers insulate the resistive storage layers to prevent charge leakage from the storage layers and allow for the use of thin resistive storage layers. In some embodiments, the nonvolatile resistive memory device includes a metallic multilayer comprising two metallic layers about an interlayer. A dopant at an interface of the interlayer and metallic layers can provide a switchable electric field within the multilayer.

Abstract: This disclosure is directed to air-bearing sliders used in magnetic storage systems that employ a trench arranged between a transducing head connected to a slider body and a leading edge of the slider body. The trench is configured to divert air passing over an air-bearing surface of the slider body away from the transducing head.

Abstract: An anchor-point based digital rights management provides for a posted move of one or more digital rights between two devices. By executing a posted move, a user (1) disables a binding record of a source user device, thereby terminating authorized use of the digital property instance through at the source anchor point; and (2) enables a different binding record of a target user device, thereby allowing authorized use of the digital property instance through that target anchor point. Such a “move” can accomplished through secure communications links mediated by one or both of a content handler and an anchor point message system.

Abstract: A magnetic data storage medium may include a substrate, a magnetic recording layer, a protective carbon overcoat, and a monolayer covalently bound to carbon atoms adjacent a surface of the protective carbon overcoat. According to this aspect of the disclosure, the monolayer comprises at least one of hydrogen, fluorine, nitrogen, oxygen, and a fluoro-organic molecule. In some embodiments, a surface of a read and recording head may also include a monolayer covalently bound to carbon atoms of a protective carbon overcoat.

Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

Abstract: An apparatus is provided with a system load and a plurality of batteries that are individually selectable to provide power to the load, and arbitration circuitry configured to selectively calibrate each of the batteries in relation to respective calibration status data stored in memory for each of the batteries. The arbitration circuitry executes a method for comparing charging records of each of the plurality of batteries, and then instigating a battery power calibration procedure to a selected battery of the plurality of batteries in relation to results of the comparing step.

Abstract: A magnetic memory device includes a first electrode separated from a second electrode by a magnetic tunnel junction. The first electrode provides a write current path along a length of the first electrode. The magnetic tunnel junction includes a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation. The free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers. A current passing along the write current path generates a magnetic field. The magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation.

Abstract: A disc drive disc stack assembly and a method for forming the disc stack assembly to reduce servo pattern runout. The disc stack assembly includes a number of prewritten discs having a servo pattern and a disc alignment mark. The first step is to place a first disc about a spindle motor hub of the disc drive. The second step is to align a disc alignment mark of the first disc in relation to a direction of a biasing force. The third step is to apply the biasing force to the first disc to engage the first disc against the spindle motor hub. The fourth step is to repeat the first three steps for each remaining disc in the disc stack assembly. The final step is to clamp the prewritten discs with a disc clamp to secure the position of each prewritten disc relative to the spindle motor hub.

Abstract: A near-field transducer includes a substrate that defines a substrate-parallel plane. The near-field transducer also includes a composite layer deposited on the substrate-parallel plane. The composite layer has a first layer of the plasmonic material and a second layer of an insertion material adjacent the substrate. The insertion material reduces plastic deformation of the near-field transducer at elevated temperatures.

Abstract: A method is provided for correcting a write defect in a data storage apparatus comprising a storage medium. The method comprises reading information from a track of the storage medium in which a write defect occurs, calculating a number of error-corrected error correction code symbols in sectors of the track based on the read information, determining a number of sectors on which write defect correction is to be performed by comparing the calculated number of error-corrected error correction code symbols with a threshold, and performing a rewrite operation on the track, beginning at a starting sector determined by the number of sectors on which write defect correction is to be performed.