Abstract: A system and method are provided for collecting, storing, and displaying a plurality of different types of process data, including accumulated and differential particle counts, from remote locations without requiring manual intervention. The system includes a plurality of particle measuring instruments disposed at respective locations distributed about a facility in order to collect particle data. The system also includes a process data collection device for providing process data other than particle data, such as temperature, pressure or humidity level. The system is interconnected with the plurality of particle measuring instruments and the process data collection device by means of a computer network. As such, the particle data and process data can be provided to a computer network for collection and storage. Thereafter, the particle data and the process data can be remotely displayed at a graphic user interface.

Abstract: Methods and computer program products are provided for analyzing a crystalline structure, such as a wafer or an epitaxial layer in more detail, including the portion of the crystalline structure proximate the edge. The methods and computer program products of one aspect determine the average thickness and the normalized profile of a crystalline structure with enhanced detail. Additionally, the method and computer program product of another aspect represent the profile proximate the edge of the crystalline structure with a pair of lines that are selected to permit the profile of the crystalline structure proximate the edge of the crystalline structure to be characterized in more detail. Further, the method of yet another aspect permits the average edge profile for a plurality of crystalline structure to be defined.

Abstract: The method and apparatus of the present invention permit indirect identification of a target plane, such as the plane identified by an alignment feature, based upon the identification of a reference plane which is offset by a predetermined angle from the target plane. In addition, in order to permit alignment features to be defined at non-standard angles with respect to the axial orientation of an ingot, an apparatus is provided that includes a frame having at least two members. The first member abuts a bar extending outwardly from the stage of an x-ray diffractometer, while the second member carries an engagement member for engaging a non-standard alignment feature. The second member may be movable relative to the first member to permit the frame to be mounted upon ingots having different non-standard alignment features.

Abstract: A method of preparing a polishing pad of a hydrophobic material for a polishing procedure includes, prior to the polishing procedure, contacting the polishing pad with a solution of at least one component for converting at least a portion of a polishing surface, including pores therein if porous, of the polishing pad from hydrophobic to hydrophilic, and maintaining the polishing pad in a wet state between the contacting step and the polishing procedure. New hydrophobic polishing pads are thus efficiently seasoned (broken in) for subsequent use in planarizing a semiconductor substrate surface.

Abstract: An improved method for lapping the opposed major surfaces of a wafer is provided. In this regard, a multi-step lapping process is provided in which lapping continues while transitioning from a first slurry having larger abrasive particles to a second slurry having smaller abrasive particles so as to reduce the overall length of the lapping process. In addition, the multi-step lapping process is optimized so as to remove no more than about 90 microns in total thickness from the opposed major surfaces of the wafer. By completing the lapping with slurry having smaller abrasive particles, subsequent etching of the wafers produces shallower surface pitting. As such, the wafers generally require less polishing than required by conventional processes.

Abstract: The apparatus, system and method for cutting crystal ingot provide techniques for cutting an ingot into wafers with a wire cutting apparatus utilizing wire with a diameter of less than 0.18 mm, such as 0.14 mm. The wire cutting apparatus also includes multiple rollers about which the wire is wrapped, and nozzles for applying slurry to the wire. One of the rollers is located on one side of the crystal ingot, while another roller is located on the other side of the crystal ingot. At least one nozzle is disposed proximate the first and second rollers. The nozzles collectively disperse slurry at a rate in the range of 40 to 60 liters per minute, such as 50 liters per minute, and at a viscosity of 42 to 62 centipose, such as 52 centipose.

Abstract: A gasket material made from expanded PTFE for sealing high purity semiconductor furnace operations is provided. The gasket may be used in place of O-rings made of fluoro-rubber or standard PTFE material. Gaskets made of expanded PTFE provide greater flexibility and thus gives a better seal than standard O-rings.

Abstract: A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes etching the wafer surface and then growing an initial portion of the epitaxial layer under conditions of relatively high temperature and low source gas flow to heal defects in or on the surface of the substrate. Subsequently, the remainder of the epitaxial layer is grown under high growth rate conditions resulting from high source gas flow. The initial portion of the epitaxial layer acts as a low-defect seed layer by preventing defects in the surface of the substrate from propagating into the remainder of the epitaxial layer. However, the relatively high source gas flow permits the remainder epitaxial layer to be grown at a faster rate than the initial portion of the epitaxial layer.

Abstract: An internal diameter blade includes an inner diameter having an inner cutting edge, an outer diameter having an outer mounting edge, a blade surface defined between the inner edge and the outer edge, and a plurality of cuts in the blade surface. In various embodiments, the cuts reduce a vacuum between the blade and a material being cut by the blade. In various embodiments, the plurality of cuts comprises a plurality of holes through the blade. In various embodiments, the plurality of cuts comprises at least one groove extending in a direction away from the inner edge. A cutting method uses an internal diameter blade to reduce a vacuum between the blade and a material being cut by the blade.

Abstract: A method of measurement of wafers to isolate wafer support-related defects involves Scanning Infrared Depolarization (SIRD) measurement of multiple processed wafers, each oriented differently on the wafer support, to obtain and characterize depolarization stress defects.

Abstract: A method of preparing a polishing pad of a hydrophobic material for a polishing procedure includes, prior to the polishing procedure, contacting the polishing pad with a solution of at least one component for converting at least a portion of a polishing surface, including pores therein if porous, of the polishing pad from hydrophobic to hydrophilic, and maintaining the polishing pad in a wet state between the contacting step and the polishing procedure. New hydrophobic polishing pads are thus efficiently seasoned (broken in) for subsequent use in planarizing a semiconductor substrate surface.

Abstract: A method of analyzing a semiconductor sample is provided. According to one embodiment, the method includes measuring the diffusion length of minority carriers in the semiconductor sample. The resistivity of the semiconductor sample is measured. A heavy metal concentration in the semiconductor sample is determined based upon the diffusion length and resistivity of the semiconductor sample.

Abstract: A method of lapping semiconductor wafers includes the step of transmitting sounds generated during the lapping process to a receiver, allowing the operator to use sound to more quickly detect problems associated with starting the lap process.

Abstract: An improved method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma while doping the crystal with an electrically inactive material such as nitrogen, carbon, or tin, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

Abstract: A high resistivity wafer which does not exhibit diminishing resistivity after device installation and method of making the high resistivity wafer comprising a) using the CZ method to grow a silicon single crystal ingot with a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm or more, and an initial interstitial oxygen concentration of 10 to 40 ppma, b) processing the ingot into a wafer, c) determining the total amount of heat treatment required to reduce the interstitial oxygen content of the wafer to about 8 ppma or less, d) determining the amount of heat treatment which will take place during the device fabrication process after wafer fabrication, e) subjecting the wafer to a partial oxygen precipitation heat treatment equivalent to the total amount of heat treatment, less the amount of heat treatment that will occur during device fabrication.

Abstract: A method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors, and while further minimizing in-grown defects is provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma with a v/G ratio of from about 1×10−5 cm2/s·K to about 5×10−5 cm2/s·K, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.

Abstract: A method for non-destructively evaluating the concentration of impurities in an epitaxial susceptor used in the processing of a semiconductor substrate. The method includes processing a semiconductor substrate of known impurity levels on the epitaxial susceptor, and measuring the impurity levels after epitaxial processing by drawing together at least a portion of the impurities and measuring the concentration of impurities that were drawn together. In one embodiment of the invention, a gettering layer is formed adjacent one or more surfaces of the substrate to getter impurities from the substrate into the gettering layer. The impurity concentration of the gettering layer is then measured and the results are used to determine at least a range of impurity concentrations that were transferred to the substrate from the epitaxial susceptor.

Abstract: A system and method are provided which removes bromine biocide used in effluent process streams without the use of chemicals or complex mechanical systems. In particular, the system and method of the present invention remove bromine biocide by photodissociating the bromine, thereby forming innocuous salts. Ultraviolet energy may be used to provide the energy for photodissociation, in particular ultraviolet energy supplied by medium pressure Hg vapor lamps.

Abstract: Methods and computer program products are provided for analyzing a crystalline structure, such as a wafer or an epitaxial layer in more detail, including the portion of the crystalline structure proximate the edge. The methods and computer program products of one aspect determine the average thickness and the normalized profile of a crystalline structure with enhanced detail. Additionally, the method and computer program product of another aspect represent the profile proximate the edge of the crystalline structure with a pair of lines that are selected to permit the profile of the crystalline structure proximate the edge of the crystalline structure to be characterized in more detail. Further, the method of yet another aspect permits the average edge profile for a plurality of crystalline structure to be defined.