Abstract: A low-cost method of manufacturing a silicon wafer is provided. The method comprises providing a crucible for melting silicon; adding silicon to the crucible; melting the silicon to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt according to the Czochralski technique at a pulling rate of greater than 1.1 mm/min; and forming a silicon wafer from the silicon crystal. The method may also include adding a nitrogen-containing dopant to the crucible. Furthermore, the method may include etching the wafer first in an alkaline etching solution, and then in an acidic etching solution. The method may also include simultaneously depositing an epitaxial first film on the frontside of the wafer and a second film on the backside of the wafer, wherein the second film traps impurities on the backside of the wafer so the impurities do not contaminate the frontside of the wafer while the epitaxial first film is being grown.

Abstract: A system for measuring the rotational speed of a shaft driven by a motor. The system includes a rotation measurement device having a rotatable sensor and configured to generate a signal corresponding to rotation of the sensor. The rotation measurement device may be supported by a fixture mountable on the motor. A coupler is associated with the sensor and includes a gripping surface configured to contact and grip the end-surface of the shaft to couple the sensor to the shaft and impart the rotation of the shaft to the sensor.

Abstract: A novel method for counting pump cycles of an air pump by detecting the air pressure differential of the air pump cycle with a differential pressure switch and attaching an electronic counter to the pressure switch to count the number of openings and /or closings detected by the pressure switch.

Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.

Abstract: A graphite material coated with silicon carbide which exhibits superior physical impact resistance and can be manufactured at low cost. The material includes a graphite substrate coated with a silicon carbide film with a thickness of 30-50 &mgr;m, wherein a mixed layer of graphite and silicon carbide with a thickness of 10-500 &mgr;m is provided from the interface of the graphite substrate and the silicon carbide film through the inside of the graphite substrate, and the silicon carbide film has a peel strength of 5 Mpa or more. The silicon carbide film is attached preferably by the CVD method and is suitably used as a material for an apparatus for drawing-up single crystals of silicon.

Abstract: A method for evaluating the concentration of impurities in gases and equipment used in heat treatment of a semiconductor substrate is provided. The method includes processing a semiconductor substrate of known impurity levels in a heat treatment furnace, and measuring the impurity levels after the heat treatment processing by drawing together at least a portion of the impurities and measuring the concentration of impurities that were drawn together. In one embodiment of the invention, a gettering layer is formed adjacent one or more surfaces of the substrate to getter impurities from the substrate into the gettering layer. The impurity concentration of the gettering layer is then measured and the results are used to determine at least a range of impurity concentrations that were transferred to the substrate from the heat treatment process.

Abstract: A method of lapping semiconductor wafers includes the step of transmitting sounds generated during the lapping process to a receiver, allowing the operator to use sound to more quickly detect problems associated with starting the lap process.

Abstract: The present invention is directed to the use a of resin trap device to remove large resin particles from water in a water purification system to thereby protect downstream ultrafiltration equipment. The present invention includes a resin trap device which comprises a housing and a resin strainer disposed within the housing. The resin strainer includes a plurality of openings having a particle pass size of between about 100 &mgr;m and about 250 &mgr;m, and thus allows water and small particles to pass through the resin trap device and large particles to be retained in the resin trap device. The present invention also includes a water purification system including a water source, a resin bed and the resin trap device, and a method of purifying water using the resin trap device of the invention.

Abstract: A process for demounting silicon wafers from a polishing plate is provided, wherein a polishing plate containing wafers is subjected to a fluid stream to separate the wafer from the polishing plate. The wafer then passes through a fluid stream to rinse the wafer. Finally, the wafer is placed in a cassette that is submerged in a dilute solution of hydroflouric acid and water, and waits in que for a standard cleaning process. By storing the wafer in the solution containing hydroflouric acid, metal precipitation on the surface of the wafer is prevented.

Abstract: Apparatuses and methods for use in adjusting a substrate centering system to center a substrate on a rotatable chuck in a semiconductor processing machine, the chuck including at least one reference point. One apparatus comprises a plate configured to be placed on the chuck and at least one centering mark formed on the plate, wherein the at least one centering mark is configured so that it may be compared to the at least one reference point on the chuck to determine if the plate is centered. The plate often is at least partially transparent so that its position relative to the at least one reference point on the chuck may be seen.

Abstract: A system and method are provided which removes bromine biocide used in effluent process streams without the use of chemicals or complex mechanical systems. In particular, the system and method of the present invention remove bromine biocide by photodissociating the bromine, thereby forming innocuous salts. Ultraviolet energy may be used to provide the energy for photodissociation, in particular ultraviolet energy supplied by medium pressure Hg vapor lamps.

Abstract: An illumination apparatus for indicating the liquid level in a chemical storage tank is provided. The apparatus includes a transparent globe surrounding a light bulb mounted by flanges to upper portions of a storage tank, and being illuminated by an external electrical supply. Optionally the light bulb may be cooled by either allowing gas or air contained in the storage tank pass through a hole in the globe to interact with and cool the light bulb, or supplying a gas to the globe and circulating it around the light bulb. A shadow line is cast at the surface level of the liquid in the tank, and can be visibly seen through the translucent walls of the tank from some distance away.

Abstract: A wafer support device and an associated reactor system are provided which permit a wafer to be supported during the growth of a uniform epitaxial layer. The wafer support device includes a base and at least one contact member for supporting the wafer in a spaced relationship to the base. The base directs a portion of the gas through the space between the base and the back side of the wafer to facilitate the smooth flow of the gas. The wafer support device may also include a thermal mass proximate the edge of the wafer. The base may be formed of a material having greater thermal transparency than the material that forms the thermal mass such that the thermal mass will absorb and retain heat. Once heated, the thermal mass will therefore limit the heat that escapes from the edge of the wafer.

Abstract: A method of manufacturing a high-purity epitaxial silicon wafer is provided. The method includes providing a quartz crucible for melting silicon; adding silicon to the crucible; heating the crucible to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt; forming a silicon wafer from the silicon crystal, the wafer having a frontside and a backside; and simultaneously depositing an epitaxial first silicon film on the frontside of the wafer and a polycrystalline second silicon film on the backside of the wafer.

Abstract: A reactor system with an associated wafer support device is provided for use in the growth of an epitaxial layer of semiconductor material on a semiconductor wafer. The reactor system includes a reaction chamber including an inlet and an outlet configured to flow a source gas through the reaction chamber. The reaction system also includes a wafer support mounted at least partially within the reaction chamber, and a semiconductor wafer supported adjacent an outer edge by the wafer support. The wafer support device typically includes a hub and an arm extending outwardly from the hub. The wafer support device also typically includes a contact member coupled to the arm. In some embodiments a portion of the contact member extending downward relative to the back side of the wafer. The downwardly extending portion is configured to contact and support the wafer during epitaxial growth of semiconductor material onto the wafer.

Abstract: A chemical sampling sink and method. The chemical sampling sink typically includes an enclosure configured to contain a receptacle, and a chemical supply line extending into the enclosure, the chemical supply line including a dispenser configured to deliver a liquid chemical to the receptacle. The chemical sampling sink also includes an exhaust line attached to the enclosure, the exhaust line being configured to suction gases from the enclosure, and a filter positioned on the enclosure, the filter being configured to remove contaminants from air drawn into the enclosure as gases are suctioned from the enclosure out the exhaust line.

Abstract: An apparatus for transferring wafers between wafer holders such as wafer cassettes, etching drums and the like includes a tank for containing a liquid transfer medium in which the wafers can be transferred. The apparatus includes a wafer transfer unit that can transfer a plurality of wafers such as semiconductor wafers between wafer holders, and maintain the wafers in a desired relative orientation during transfer. For example, the wafers can be maintained in a parallel relationship. The apparatus can be used to automatically transfer wafers to etching drums without cross-indexing of the wafers and without manual handling of the wafers.

Abstract: A wire saw slicing apparatus capable of slicing a cylindrical workpiece into wafers having a flat shape with reduced bow and warp. The slicing apparatus includes a layer of parallel wires moving with reciprocating or continuous movement while a workpiece is advanced through the wires, while an abrasive containing slurry is supplied. The parallel wires are wound around wire guides, wherein the outer sleeve of the wire guide has a higher thermal coefficient of expansion, and the substructure of the wire guide has a lower thermal coefficient of expansion, with the substructure having flanges at the axial ends that restrict the outer sleeve from expanding axially.

Abstract: A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes growing a first epitaxial semiconductor layer on a semiconductor substrate under conditions of relatively high temperature and low source gas flow to heal defects in or on the surface of the substrate. Subsequently, a second epitaxial semiconductor layer is grown on the first layer under conditions of relatively low temperature and high source gas flow. The first epi layer acts as a low-defect seed layer by preventing defects in the surface of the substrate from propagating into the second epi layer. Optionally, a hydrogen chloride etch may be employed during a portion of the first epi layer growth to increase the efficacy of the first layer.

Abstract: Methods for producing doped polycrystalline semiconductors and for producing doped monocrystalline semiconductors from predoped monocrystalline and polycrystalline semiconductors. The methods for producing doped polycrystalline semiconductors may include (1) providing a reactor for chemical vapor deposition, (2) creating a vapor within the reactor that includes a silicon compound and a preselected dopant, and (3) providing a substrate, exposed to the vapor, onto which the silicon and the dopant in the vapor are deposited to form doped polycrystalline silicon. The methods for producing doped monocrystalline semiconductors may include (1) selecting a first amount of a first semiconductor, the first semiconductor having a first concentration of the dopant, (2) selecting a second amount of a second semiconductor, and (3) using the first and second amounts to grow a monocrystalline semiconductor having a preselected concentration of the dopant.