Abstract: An apparatus and method for measuring air currents on the surface of a substrate, which can accurately measure the magnitude and direction of air currents on the surface of a wafer with wafer-type air current measurement sensors, are provided. The apparatus includes: a first air current measurement module measuring a magnitude of air currents on a surface of a first substrate, which is processed in accordance with a semiconductor manufacturing process; a second air current measurement module measuring a movement direction of the air currents; and a power module supplying power to the first and second air current measurement modules, wherein the first air current measurement module, the second air current measurement module, and the power module are mounted on a second substrate, which has the same shape as the first substrate.

Abstract: An apparatus for treating a substrate is disclosed. The apparatus includes a radio frequency (RF) power source to apply an RF signal to excite a process gas to be in a plasma state. A supporting unit to support the substrate includes an edge ring to surround the substrate, a coupling ring disposed under the edge ring and including an electrode in the coupling ring, and an edge impedance control circuit connected with the electrode. The edge impedance control circuit includes a harmonic control circuit unit to control a harmonic generated from the RF power source, an ion flux control circuit unit to adjust an ion flux of an edge region of the substrate, and a cable impedance control circuit unit to adjust an impedance made due to a length of the RF cable.

Abstract: A thin-film forming apparatus and method are provided. A thin-film forming apparatus includes a chamber configured to hold a vacuum formed in the chamber, a deposition object placed at a set position inside the chamber, a sputtering target placed inside the chamber and containing particles for deposition, a gas supply module configured to supply a gas for forming a plasma state inside the chamber, a step-coverage control module located inside the chamber and facing the deposition object, and a voltage supply module located inside the chamber and configured to supply an electric current to the sputtering target, wherein the deposition object is deposited with the particles provided from the sputtering target based on the electric current, and wherein the step-coverage control module is configured to control a step coverage of the deposition object by adjusting an amount of the particles moving toward the deposition object through a repositioning maneuver.

Abstract: Provided are an apparatus for providing a substrate processing liquid having an optimal structure in the correlation between securing internal agitation fluidity and recovery of sloshing, and a substrate processing system including the same. The apparatus for providing substrate processing liquid comprises a storage tank for storing substrate processing liquid, and a partition wall installed inside the storage tank and for dividing an internal space of the storage tank, wherein the apparatus is connected to a substrate processing apparatus for discharging the substrate processing liquid onto a substrate to provide the substrate processing liquid to the substrate processing apparatus, wherein the partition wall includes a plurality of holes formed passing through one surface and the other surface.

Abstract: Provided is an apparatus for cleaning a part of a substrate processing apparatus, the apparatus including a chemical solution storage tank for storing a chemical solution, a filter configured to filter the chemical solution supplied from the chemical solution storage tank, a heater configured to heat the filtered chemical solution, and a vibrator arranged adjacent to the filter and configured to provide vibration to the filter.

Abstract: The apparatus may include an index module including a plurality of load ports on which a container for accommodating a substrate is placed and a transfer frame in which an index robot for transferring a substrate is installed; a plurality of treating modules each including a plurality of treating chambers vertically stacked in multiple stages and a transfer robot for loading and unloading a substrate to and from the stacked treating chamber; and a plurality of movable buffers configured to temporarily store the substrate, in which the index module and the plurality of treating modules are arranged along a first direction, and each of the plurality of movable buffers is provided to be movable between a standby position accessible by the index robot and a conveyance position accessible by the transfer robot provided to each of the plurality of treating modules.

Abstract: Disclosed is an atomic layer etching method of etching an etching target film by performing a surface modification step and an etching step. The surface modification step includes a surface modification layer formation step of forming a surface modification layer on a surface of the etching target film using radicals and a precursor supply step of adsorbing precursor molecules onto the surface of the etching target film having the surface modification layer. The etching step includes a heat treatment step of thermally treating a substrate having undergone the surface modification step to remove the surface modification layer from the etching target film and a cooling step of cooling the substrate. The surface modification step further includes a plasma treatment step of treating the surface of the etching target film using ions in at least one of sections before the surface modification layer formation step and after the precursor supply step.

Abstract: Disclosed is a method of processing a substrate. The method includes: a first etching operation of rotating a substrate having a first film and a second film and etching the second film by supplying an etchant to the substrate; and after the first etching operation, a second etching operation of etching the second film by supplying the etchant to the rotating substrate, in which a second temperature, which is a temperature for etching the second film in the second etching operation, is lower than a first temperature for etching the second film in the first etching operation.

Abstract: Provided is a substrate processing apparatus including: a liquid treating chamber for processing a substrate with multiple types of treatment liquids; an individual exhaust pipe connected to the liquid treating chamber to exhaust an atmosphere in the liquid treating chamber; a plurality of collective exhaust pipes connected to the individual exhaust pipes; and an exhaust switching unit which is disposed between the individual exhaust pipe and the collective exhaust pipe, and switches an exhaust path of the exhaust gas to a corresponding collective exhaust pipe according to the property of the exhaust gas flowing in the individual exhaust pipe, in which the exhaust switching unit includes an exhaust switching module disposed between the individual exhaust pipe and each of the collective exhaust pipes.

Abstract: Provided is a transfer robot for transferring a substrate, the transfer robot including: a hand assembly including a hand supporting a substrate and a hand support connected to the hand; and a driving unit for driving the hand assembly, in which wherein the hand includes: a support plate coupled to the hand support to support the substrate; a fixed guide which is fixedly installed on a front end of an upper surface of the support plate to support a region of a lower surface of an edge of the substrate placed on the support plate; a rotary guide located at a rear end of the upper surface of the support plate so as to be spaced apart from the fixed guide to support the region of the lower surface of the edge of the substrate; and a guide driving unit for driving the rotary guide.

Abstract: Disclosed are a substrate support unit and a substrate processing apparatus including the same, in which a heat generation issue of a bias electrode is improved. The substrate support unit is disposed inside a chamber body for processing of a substrate using plasma to hold the substrate, and includes a dielectric plate including a chucking electrode for adsorption of the substrate, a bias electrode provided inside the dielectric plate at a position below the chucking electrode to control plasma treatment process characteristics, and a bias power line configured to supply power to the bias electrode. The bias power line branches into a plurality of lines, and the plurality of lines forms junction portions together with the bias electrode in a region outside the substrate.

Abstract: Disclosed are a substrate transfer robot capable of accurately recognizing the positions of a plurality of substrates while transferring the substrates, a method of recognizing the positions of the substrates by the substrate transfer robot, and a substrate processing apparatus including the substrate transfer robot. The substrate transfer robot includes a robot arm, an upper robot hand coupled to the robot arm to support a first substrate from below, a lower robot hand coupled to the robot arm at a position below the upper robot hand to support a second substrate from below, an upper camera disposed above the upper robot hand, and a lower camera disposed below the lower robot hand. The upper camera and the lower camera capture images of the first substrate and the second substrate in directions tilted from inner sides of the first and second substrates toward outer sides of the first and second substrates.

Abstract: Disclosed is a method of processing a substrate. The method includes: an etchant supply operation of rotating a substrate on which a first film and a second film are formed and supplying an etchant for etching the first film onto the substrate; and a puddle operation of stopping the supply of the etchant, forming a puddle made of the etchant on the substrate, and selectively etching the first film with respect to the second film by the puddle, in which the puddle is a liquid film made of the etchant, and a temperature of the puddle is adjusted in the puddle operation.

Abstract: A substrate processing apparatus and a substrate processing method are proposed, and the substrate processing apparatus includes a chamber having a processing space therein, a substrate support unit arranged in the processing space and for supporting a substrate, an ion blocker arranged above the substrate support unit and for dividing the processing space into an upper region where plasma is generated and a lower region, a gas supply unit for supplying a fluorine-containing gas to the upper region, an upper electrode module arranged above the ion blocker and for supplying the fluorine-containing gas to the upper region, and a high-frequency power module for applying electric power to the upper electrode module to generate the plasma in the upper region, wherein a coating layer for capturing fluorine radicals of the plasma is formed on at least a part of a surface of the upper electrode module.

Abstract: Provided is a transfer robot for transferring a substrate.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a batch-type treating bath for treating a substrate in a batch-type manner; a single-type treating chamber for treating the substrate in a single-type manner; and a buffer chamber positioned on a transfer path of the substrate transferred between the batch-type treating bath and the single-type treating chamber, and supplying a liquid for maintaining a wetting state of the substrate.

Abstract: The present disclosure relates to a method of controlling a plasma processing apparatus, and a plasma processing apparatus for performing the method. According to one embodiment of the present disclosure, a method of controlling a plasma processing apparatus includes supplying power having a sine wave from a high-frequency power source to a lower electrode to generate a plasma; and supplying power from the high-frequency power source to the lower electrode, to control an ion in the generated plasma, and when a voltage of a wafer disposed on the lower electrode has a negative peak value in a phase region, inputting a negative DC voltage to a focusing ring by a DC power source.

Abstract: Provided is a substrate processing apparatus including a chamber including an inner space, a fluid supply unit configured to supply a supercritical fluid to the inner space, a fluid exhaust unit configured to exhaust the supercritical fluid from the inner space, and a controller configured to control the fluid supply unit and the fluid exhaust unit, wherein the fluid supply unit includes a fluid supply source, a supply line connecting the fluid supply source and the chamber to each other, a flow rate control valve installed in the supply line, and a flow rate measuring member installed in the supply line and positioned between the fluid supply source and the flow rate control valve, and the controller is further configured to control the flow rate control valve to supply the supercritical fluid, based on a flow rate of the supercritical fluid measured by the flow rate measuring member.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space therein; a fluid supply unit having a supply line configured to supply a treating fluid to the inner space and a fluid supply source configured to supply the treating fluid to the supply line; a first exhaust unit configured to exhaust the inner space; a second exhaust unit configured to exhaust the supply line; and a controller configured to control the fluid supply unit, the first exhaust unit, and the second exhaust unit, and wherein the controller controls the fluid supply unit and the second exhaust unit so a pressure of the supply line is maintained at a critical pressure of the treating fluid or above during at least a part of a standby step for keeping a substrate outside the inner space before introducing thereof into the inner space.

Abstract: The inventive concept provides a substrate support unit comprising a chuck supporting and rotating a substrate; and a lamp unit provided below the substrate to heat the substrate, wherein the lamp unit comprises a first lamp having a reflective layer on the surface thereof, to block and/or reflect a light which is emitted from the first lamp but not directed to the substrate to direct the light to the substrate.