Abstract: A substrate storing and aligning apparatus is proposed. The substrate storing and aligning apparatus is capable of efficiently using space in substrate bonding equipment. The substrate storing and aligning apparatus in the substrate bonding equipment for bonding substrates includes a front end buffer including a front end storing slot configured to temporarily store a substrate, and a front end opening configured such that a transfer robot is movable therethrough to transfer the substrate from the front end storing slot, and a front end aligner provided to be stacked on an upper portion of the front end buffer, and configured to rotate the substrate so as to align the substrate.

Abstract: Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna.

Abstract: A coolant supplying apparatus, which is configured to prevent dew condensation from being generated in a supply of coolant, and a temperature controlling apparatus and a test handler including the same are provided. The coolant supplying apparatus includes a housing having an outlet, a coolant spraying part arranged inside the housing and configured to discharge coolant around the outlet of the housing, and a dry air injection part configured to inject dry air into the housing.

Abstract: Disclosed is a heating plate for supporting and heating a substrate, the heating plate including: a base layer on which a substrate is seated; a heating wire layer located under the base layer and including a transition metal material and a metal bond; and a protective layer located under the heating wire layer and including a ceramic material and an additive material, in which the additive material is melted at a lower temperature than the ceramic material and the transition metal material, and the metal bond is a material produced by bonding of components contained in the transition metal material and the additive material.

Abstract: The present invention provides a method for treating a substrate. The method for treating a substrate comprises: treating the substrate with liquid; and drying the liquid-treated substrate, and the liquid treatment step includes: a first liquid supply step of supplying a first liquid to an upper surface of the rotating substrate; and a second liquid supply step of supplying a second liquid to an upper surface of the rotating substrate, and in the second liquid supply step, a rotation speed of the substrate is adjusted such that the second liquid supplied on the substrate flows from a central region of the substrate to an edge region of the substrate.

Abstract: Provided are a substrate treating liquid supply unit for constantly maintaining a liquid level of a nozzle of an inkjet head unit through real-time water level measurement, and a substrate treating apparatus including the same. The substrate treating liquid supply unit includes: a first reservoir connected to an inkjet head unit for jetting a substrate treating liquid onto a substrate and providing the substrate treating liquid to the inkjet head unit; a water level sensor measuring a water level of the substrate treating liquid stored in the first reservoir; and a pressure control module compensating for a pressure provided to the first reservoir based on an amount variation in the water level of the substrate treating liquid, wherein a liquid level of a nozzle of the inkjet head unit is constantly maintained.

Abstract: The inventive concept provides a temperature controlling method. The temperature controlling method for controlling a temperature of a tank storing a treating fluid transferred to the chamber, comprises supplying the treating fluid to the inner space of the tank, heating the treating fluid at the inner space, and transferring the heated treating fluid to the chamber, wherein the temperature of the inner space is controlled based on a measured pressure of the inner space.

Abstract: Disclosed is a method for treating a substrate in a plurality of chambers. The substrate treating method may include performing liquid treatment on a substrate located in a chamber through a supply line for connecting a circulation line and each of the plurality of chambers while the liquid circulates in the circulation line, wherein a flow rate per unit time of the liquid flowing downstream of a valve provided in the supply line is constantly maintained at a reference flow rate, and controlling an upstream flow rate which is a flow rate per unit time of the liquid flowing upstream of the circulation line rather than the supply lines or a downstream flow rate which is a flow rate per unit time of the liquid flowing downstream of the circulation line rather than the supply lines based on a distribution flow rate which is a flow rate per unit time of the liquid flowing upstream of the valve to maintain the reference flow rate.

Abstract: An apparatus for processing a substrate is provided. The apparatus includes: a levitation stage transferring a substrate in a first direction and including first areas and second areas, which are arranged in a second direction that is different from the first direction; a plurality of rollers installed in the first areas and transferring the substrate; a plurality of first vacuum holes installed in the first areas and sucking the air at first pressure; and a plurality of second vacuum holes installed in the second areas and sucking the air at second pressure that is different from the first pressure.

Abstract: An apparatus of storing container includes a stocker including shelves being configured to support containers, respectively, a purging unit being configured to provide a purge gas for each of the shelves to purge the containers when the stocker is in a purge mode, and to provide the purge gas only for each of the shelves when the stocker is in a normal mode, an inspection unit being configured to inspect a purge quality of the purge gas provided to each of the shelves while the stocker is in the normal mode, and a control unit being configured to change the stocker between in the purge mode and in the normal mode, and being configured to control the purging unit according to a switch between the purge mode and the normal mode. Thus, the apparatus has improved operation efficiency.

Abstract: According to an aspect of the inventive concept, there is provided a plasma processing apparatus including a housing including a space accommodating a wafer therein, a gas supply member configured to supply gas into the housing, a plasma source generating a plasma from the gas supplied into the housing, and a magnetic field generating member disposed on the housing and configured to generate a magnetic field inside the housing, wherein the magnetic field generating member includes a first magnet unit disposed on the housing, and a second magnet unit disposed on the first magnet unit, wherein the second magnet unit is rotatable to change the magnetic pole of the upper portion and lower portion of the second magnet unit.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit configured to support a substrate; and a liquid supply unit configured to supply a treating liquid onto the substrate supported on the support unit, and wherein the liquid supply unit comprises: a tank configured to have an accommodation space for storing the treating liquid therein; a circulation line configured to circulate the treating liquid stored in the accommodation space; a supplementary line configured to supply the treating liquid to the accommodation space, and at which a valve is installed; a heater installed at the circulation line, and for heating the treating liquid; and a controller is configured to control the valve and the heater.

Abstract: The present invention provides an apparatus for treating a substrate, including: a process chamber including a first body and a second body which are combined with each other to form a treatment space for treating a substrate is treated therein; a driver which moves the process chamber to an open position or a close position; a support unit which supports a substrate within the treatment space; and a fluid supply unit which supplies a fluid to the treatment space, in which the support unit includes: a support pin coupled to the first body or the second body; and a guide member which is coupled to the support pin and extends in a lateral direction of the support pin to support the substrate.

Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes first treating a substrate in a treating space according to a reference recipe; second treating a substrate in the treating space according to the reference recipe after the first treating; and optimizing an inner ambient of the treating space according to the reference recipe, and wherein the optimizing includes a purge operation of supplying and discharging a treating fluid to/from the treating space.

Abstract: Proposed are an electrostatic chuck, a plasma processing method, and a plasma processing apparatus for preventing abrupt temperature changes in a substrate and maintain a constant temperature. The electrostatic chuck that supports a substrate in the plasma processing apparatus includes a puck on which a substrate for plasma processing is seated and having a heater, and a base plate located below the puck and having a cooling passage through which fluid for cooling flows. A temperature maintenance layer composed of a phase change material is provided inside the base plate.

Abstract: A substrate support unit including a Q-pad capable of minimizing fastening pressure variations that may be caused by heat and a substrate treating apparatus including the substrate support unit are provided. The substrate treating apparatus includes: a chamber housing; a substrate support unit supporting a substrate within the chamber housing; a showerhead unit providing a process gas into the chamber housing; and a plasma generation unit generating plasma for treating the substrate within the chamber housing using the process gas, wherein the substrate support unit includes a base plate, a dielectric layer, which is disposed on the base plate, and a thermal transfer pad, which is disposed between the base plate and the dielectric layer and bonds the base plate and the dielectric layer together, and the thermal transfer pad includes a plurality of corrugated patterns.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus of the present invention comprises a support unit provided in a processing space for processing a substrate and for supporting the substrate, wherein the support unit comprises a puck having a first thermal conductivity and having a concave groove formed thereon; and a block provided in the concave groove and having a second thermal conductivity different from the first thermal conductivity.

Abstract: The ring assembly for a substrate processing apparatus, in which a plasma process is performed, of the present invention comprises an inner ring, in which a first plasma region is formed, an outer ring provided outside the inner ring, in which a second plasma region with a lower plasma distribution than the first plasma region is formed, and a cover ring provided on an upper surface of the outer ring, having a thickness smaller than that of the inner ring, and made of a material that has a lower etching reaction to plasma than the outer ring.

Abstract: A ring assembly test apparatus for a substrate processing apparatus of the present invention comprises an electrode body including a bottom electrode disposed below a test object including a ring assembly and a top electrode disposed above the test object, and a power application module for applying power to the electrode body, wherein power is applied to the electrode body to test an occurrence of arcing of the ring assembly outside the substrate processing apparatus that processes a substrate.

Abstract: Disclosed is a substrate processing apparatus including: a processing container having a processing space therein; a support unit for supporting and rotating a substrate within the processing space; and a nozzle unit for supplying a treatment solution to the substrate, in which the processing container includes a plurality of cups that encloses the processing space and is provided so that openings through which the treatment solution is introduced are stacked in an up and down direction, and each of the plurality of cups includes: a sidewall; and an upper wall extending from the sidewall toward the processing space, and an inner end of an upper wall of a first cup, of which the upper wall is located at the uppermost side among the plurality of cups, protrudes further toward the processing space than an inner end of an upper wall of another cup.