Patents Assigned to Semiconductor Energy Laboratories Co., Ltd.
  • Patent number: 11990778
    Abstract: Safety is secured in such a manner that an anomaly of a secondary battery is detected with a protection circuit, for example, a phenomenon that lowers the safety of a secondary battery, particularly a micro short circuit, is detected early, and users are warned or the use of the secondary battery is stopped. A secondary battery protection circuit includes a first memory circuit electrically connected to a secondary battery, a comparison circuit electrically connected to the first memory circuit, a second memory circuit electrically connected to the comparison circuit, and a power-off switch electrically connected to the second memory circuit. The power-off switch is electrically connected to the secondary battery, and the first memory circuit includes a first transistor including an oxide semiconductor and retains a voltage value of the secondary battery in an analog manner.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: May 21, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takayuki Ikeda, Munehiro Kozuma, Takanori Matsuzaki, Ryota Tajima, Shunpei Yamazaki, Yuki Okamoto
  • Publication number: 20240164196
    Abstract: A display device having a photosensing function is provided. A display device having a biometric authentication function typified by fingerprint authentication is provided. A display device having a touch panel function and a biometric authentication function is provided. The display device includes a first substrate, a light guide plate, a first light-emitting element, a second light-emitting element, and a light-receiving element. The first substrate and the light guide plate are provided to face each other. The first light-emitting element and the light-receiving element are provided between the first substrate and the light guide plate. The first light-emitting element has a function of emitting first light through the light guide plate. The second light-emitting element has a function of emitting second light to a side surface of the light guide plate.
    Type: Application
    Filed: January 19, 2024
    Publication date: May 16, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke KUBOTA, Ryo HATSUMI, Taisuke KAMADA, Yuji IWAKI, Junpei MOMO, Shunpei YAMAZAKI
  • Publication number: 20240162233
    Abstract: A display device capable of improving image quality is provided. A storage node is provided in each pixel and first data can be held in the storage node. Second data is added to the first data by capacitive coupling, which can be supplied to a display element. Thus, the display device can display a corrected image. A reference potential for the capacitive coupling operation is supplied from a power supply line or the like, and thus the first data and the second data can be supplied from a common signal line.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 16, 2024
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Susumu KAWASHIMA, Naoto KUSUMOTO
  • Publication number: 20240162203
    Abstract: A display device with a high luminance, a high contrast, and low power consumption is provided. The display device includes a transistor, a light-emitting element, a coloring layer, a phosphor layer, a first electrode, and a second electrode. The light-emitting element is electrically connected to the first electrode and the second electrode, the first electrode is electrically connected to the transistor, and the second electrode is positioned on the same plane as the first electrode. The coloring layer is positioned over the light-emitting element, the phosphor layer is positioned between the light-emitting element and the coloring layer, and the phosphor layer, the light-emitting element, and the coloring layer include a region in which they overlap with one another. The light-emitting element includes a light-emitting diode chip, and the phosphor layer has a function of emitting light of a complementary color of an emission color of the light-emitting element.
    Type: Application
    Filed: November 21, 2023
    Publication date: May 16, 2024
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Koji KUSUNOKI, Yosuke TSUKAMOTO, Kensuke YOSHIZUMI
  • Publication number: 20240164134
    Abstract: A light-emitting device with high emission efficiency is provided. The light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a light-emitting layer and an electron-transport layer; the light-emitting layer includes a light-emitting material; the electron-transport layer includes an organic compound having an electron-transport property and a metal complex of an alkali metal; the ordinary refractive index of the organic compound having an electron-transport property in a peak wavelength of light emitted from the light-emitting material is greater than or equal to 1.50 and less than or equal to 1.75; and the ordinary refractive index of the metal complex of an alkali metal in the peak wavelength of the light emitted from the light-emitting material is greater than or equal to 1.45 and less than or equal to 1.70.
    Type: Application
    Filed: January 26, 2024
    Publication date: May 16, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta KAWANO, Airi UEDA, Takeyoshi WATABE, Nobuharu OHSAWA, Keito TOSU, Harue OSAKA, Satoshi SEO, Ryo NARUKAWA, Shiho NOMURA
  • Publication number: 20240164132
    Abstract: A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device and a second light-emitting device, and the second light-emitting device is adjacent to the first light-emitting device. The first light-emitting device includes a first unit emitting light, a second unit emitting light, a first intermediate layer, and a first layer. The first intermediate layer is interposed between the second unit and the first unit. The first layer is interposed between the first intermediate layer and the first unit. In the first layer, unpaired electrons are able to be observed at a spin density greater than or equal to 1×1016 spins/cm3 and less than or equal to 1×1018 spins/cm3. The second light-emitting device includes a third unit emitting light, a fourth unit emitting light, a second intermediate layer, and a second layer. The second intermediate layer is interposed between the fourth unit and the third unit.
    Type: Application
    Filed: February 28, 2022
    Publication date: May 16, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuharu OHSAWA, Toshiki SASAKI
  • Publication number: 20240164209
    Abstract: Provided is a novel light-emitting element, a light-emitting element with a long lifetime, or a light-emitting element with high emission efficiency. The light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer containing a fluorescent substance and a host material, a first electron-transport layer containing a first electron-transport material, and a second electron-transport layer containing a second electron-transport material, which are in contact with each other and in this order. The LUMO level of each of the host material and the second electron-transport material is higher than the LUMO level of the first electron-transport material.
    Type: Application
    Filed: January 23, 2024
    Publication date: May 16, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi SEO, Tsunenori SUZUKI, Naoaki HASHIMOTO
  • Publication number: 20240164124
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Application
    Filed: September 25, 2023
    Publication date: May 16, 2024
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoko SHITAGAKI, Satoshi SEO, Nobuharu OHSAWA, Hideko INOUE, Masahiro TAKAHASHI, Kunihiko SUZUKI
  • Patent number: 11985881
    Abstract: A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region and includes a first pixel, a second pixel, a third pixel, and a filter. The first pixel emits light with a spectrum having a local maximum at a first wavelength, the second pixel emits light with a spectrum having a local maximum at a second wavelength, and the third pixel emits light with a spectrum having a local maximum at a third wavelength. The filter includes a region overlapping with the first pixel, a region overlapping with the second pixel, and a region overlapping with the third pixel, and the filter has a transmittance spectrum having local minimums at a fourth wavelength and a fifth wavelength. The second wavelength is longer than the first wavelength. The third wavelength is longer than the second wavelength. The fourth wavelength is between the first wavelength and the second wavelength. The fifth wavelength is between the second wavelength and the third wavelength.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Fumito Isaka
  • Patent number: 11984064
    Abstract: A display apparatus having a wide range of threshold voltage compensation function is provided. In the display apparatus, a p-channel transistor is used as a driving transistor of the light-emitting device. Discharging is performed through a source-drain path while constant voltage is supplied to a gate so that Vth is extracted between the gate and the source. In addition, when a drain potential is set to the sum of forward voltage and a cathode potential of the light-emitting device or a potential sufficiently lower than the sum, it is possible to continue the discharging even when Vth is positive voltage. That is, compensation can be performed even in the case where Vth variation occurs from positive voltage to negative voltage.
    Type: Grant
    Filed: July 30, 2021
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Susumu Kawashima, Koji Kusunoki, Kazunori Watanabe, Satoshi Yoshimoto
  • Patent number: 11985892
    Abstract: A light-emitting device with high outcoupling efficiency is provided. In the light-emitting device including a light-emitting layer between a pair of electrodes, a low refractive index layer containing an organic compound and an inorganic compound is provided between the light-emitting layer and an anode or between the light-emitting layer and a cathode, and the low refractive index layer has a refractive index of less than or equal to 1.80 at a wavelength of light extracted from the light-emitting layer.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeyoshi Watabe, Ryohei Yamaoka, Satoshi Seo, Nobuharu Ohsawa
  • Patent number: 11984147
    Abstract: A semiconductor device storing data as a multilevel potential is provided. The semiconductor device includes a memory cell, first and second reference cells, first and second sense amplifiers, and first to third circuits. The first circuit has a function of outputting, to a first wiring and a third wiring, a first potential corresponding to a first signal output from the memory cell. The second circuit has a function of outputting, to a second wiring, a first reference potential corresponding to a second signal output from the first reference cell. The third circuit has a function of outputting, to the fourth wiring, a second reference potential corresponding to a third signal output from the second reference cell when a second switch is in an off state. The first sense amplifier refers to the first potential and the first reference potential and changes potentials of the first wiring and the second wiring.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takanori Matsuzaki, Tatsuya Onuki, Yuki Okamoto, Toshiki Hamada
  • Patent number: 11985827
    Abstract: A novel semiconductor device is provided. A memory string, which extends in the Z direction and includes a conductor and an oxide semiconductor, intersects with a plurality of wirings CG extending in the Y direction. The conductor is placed along a center axis of the memory string, and the oxide semiconductor is concentrically placed outside the conductor. The conductor is electrically connected to the oxide semiconductor. An intersection portion of the memory string and the wiring CG functions as a transistor. In addition, the intersection portion functions as a memory cell.
    Type: Grant
    Filed: January 6, 2021
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromichi Godo, Hitoshi Kunitake, Kazuki Tsuda
  • Patent number: 11983793
    Abstract: A novel human interface with excellent operability is provided. A novel data processing device with excellent operability is provided. A novel data processing device, a novel display device, or the like is provided. An input and output device is supplied with image data and supplies sensing data, and an arithmetic device supplies the image data and is supplied with the sensing data. The input and output device includes a plurality of display portions that display display data and a sensing portion that senses an object obscuring one of the display portions, and includes one region provided with the one of the display portions and the sensing portion, another region provided with the other display portions, and a curved portion between the one region and the other region. The arithmetic device includes an arithmetic portion and a memory portion that stores a program to be executed by the arithmetic portion.
    Type: Grant
    Filed: October 6, 2022
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiharu Hirakata, Shunpei Yamazaki
  • Patent number: 11983342
    Abstract: It is an object to provide a semiconductor display device having a touch panel, which can reduce power consumption. The semiconductor display device includes a panel which is provided with a pixel portion and a driver circuit which controls an input of the image signal to the pixel portion, and a touch panel provided in a position overlapping with the panel in the pixel portion. The pixel portion includes a display element configured to perform display in accordance with voltage of the image signal to be input, and a transistor configured to control retention of the voltage. The transistor includes an oxide semiconductor in a channel formation region. The driving frequency of the driver circuit, that is, the number of writing operations of the image signal for a certain period is changed in accordance with an operation signal from a touch panel.
    Type: Grant
    Filed: July 14, 2022
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama
  • Patent number: 11984562
    Abstract: A highly safe power storage system is provided. If n (n is an integer over or equal to three) secondary batteries are used in a vehicle such as an electric vehicle, a circuit configuration is used with which the condition of each secondary battery is monitored using an anomaly detection unit; and if an anomaly such as a micro-short circuit is detected, only the detected anomalous secondary battery is electrically separated from the charging system or the discharging system. At least one microcomputer monitors anomalies in n secondary batteries consecutively, selects the anomalous secondary battery or the detected secondary battery which causes an anomaly, and gives an instruction to bypass the secondary battery with each switch.
    Type: Grant
    Filed: December 27, 2022
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryota Tajima, Toshiyuki Isa, Akihiro Chida
  • Patent number: 11984093
    Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.
    Type: Grant
    Filed: December 29, 2022
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Jun Koyama, Atsushi Umezaki
  • Patent number: 11984152
    Abstract: A memory device having long data retention time and high reliability is provided. The memory device includes a driver circuit and a plurality of memory cells, the memory cell includes a transistor and a capacitor, and the transistor includes a metal oxide in a channel formation region. The transistor includes a first gate and a second gate, and in a period during which the memory cell retains data, negative potentials are applied to the first gate and the second gate of the transistor.
    Type: Grant
    Filed: June 6, 2023
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kiyoshi Kato, Takahiko Ishizu, Tatsuya Onuki
  • Patent number: 11985828
    Abstract: An object is to provide a semiconductor device with large memory capacity. The semiconductor device includes first to seventh insulators, a first conductor, and a first semiconductor. The first conductor is positioned on a first top surface of the first insulator and a first bottom surface of the second insulator. The third insulator is positioned in a region including a side surface and a second top surface of the first insulator, a side surface of the first conductor, and a second bottom surface and a side surface of the second insulator. The fourth insulator, the fifth insulator, and the first semiconductor are sequentially stacked on the third insulator. The sixth insulator is in contact with the fifth insulator in a region overlapping the first conductor. The seventh insulator is positioned in a region including the first semiconductor and the sixth insulator.
    Type: Grant
    Filed: June 7, 2023
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hajime Kimura, Tatsunori Inoue
  • Patent number: 11985890
    Abstract: An object of one embodiment of the present invention is to provide a novel organic compound. The organic compound is a triarylamine derivative. The triarylamine derivative has an aryl group including a skeleton in which a naphthyl group is bonded to a naphthylene group. The other two aryl groups are each independently a phenyl group, a biphenyl group, or a terphenyl group. These groups may each have a substituent. As the substituent, an alkyl group having 1 to 6 carbon atoms or a cycloalkyl group having 3 to 6 carbon atoms can be selected.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: May 14, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Sachiko Kawakami, Anna Tada, Yusuke Takita, Tsunenori Suzuki, Naoaki Hashimoto, Satoshi Seo