Abstract: A display device with a high luminance, a high contrast, and low power consumption is provided. The display device includes a transistor, a light-emitting element, a coloring layer, a phosphor layer, a first electrode, and a second electrode. The light-emitting element is electrically connected to the first electrode and the second electrode, the first electrode is electrically connected to the transistor, and the second electrode is positioned on the same plane as the first electrode. The coloring layer is positioned over the light-emitting element, the phosphor layer is positioned between the light-emitting element and the coloring layer, and the phosphor layer, the light-emitting element, and the coloring layer include a region in which they overlap with one another. The light-emitting element includes a light-emitting diode chip, and the phosphor layer has a function of emitting light of a complementary color of an emission color of the light-emitting element.

Abstract: An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1?m?n?1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.

Abstract: A display panel for displaying an image is provided with a plurality of pixels arranged in a matrix. Each pixel includes one or more units each including a plurality of subunits. Each subunit includes a transistor in which an oxide semiconductor layer which is provided so as to overlap a gate electrode with a gate insulating layer interposed therebetween, a pixel electrode which drives liquid crystal connected to a source or a drain of the transistor, a counter electrode which is provided so as to face the pixel electrode, and a liquid crystal layer provided between the pixel electrode and the counter electrode. In the display panel, a transistor whose off current is lower than 10 zA/?m at room temperature per micrometer of the channel width and off current of the transistor at 85° C. can be lower than 100 zA/?m per micrometer in the channel width.

Abstract: A pixel having a transistor which controls a current value supplied to a load, a first storage capacitor, a second storage capacitor, and first to fourth switches is included. After the threshold voltage of the transistor is held in the second storage capacitor, a potential in accordance with a video signal is input to the pixel. Voltage obtained by adding a potential in which the potential in accordance with the video signal and the first storage capacitor are capacitively divided to the threshold voltage is held in the second storage capacitor in this manner, so that variation of a current value caused by variations in the threshold voltage of the transistor is suppressed. Thus, desired current can be supplied to the load such as a light-emitting element. In addition, a display device with little deviation from luminance specified by the video signal can be provided.

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a mixer circuit including a digital-analog converter circuit, a control circuit for controlling the digital-analog converter circuit, a power source control switch, and a plurality of Gilbert circuits. The plurality of Gilbert circuits each include an analog potential holding circuit for holding an analog potential output from the digital-analog converter circuit. The control circuit has a function of outputting a signal for controlling the analog potential holding circuit and the digital-analog converter circuit. The power source control switch has a function of stopping supply of a power source voltage to the control circuit in a period during which the analog potential held in the analog potential holding circuit is not updated. The analog potential holding circuit includes a first transistor. The first transistor includes a semiconductor layer including an oxide semiconductor in a channel formation region.

Abstract: A display apparatus includes a first pixel, a second pixel, a third pixel, and a fourth pixel. The first pixel includes a first light-emitting device and a first layer. The first light-emitting device emits first light toward the first layer. An emission spectrum of the first light has an intensity in a blue-light wavelength range and an intensity in a green-light wavelength range. The first light contains a color conversion material converting blue and green light into red light. The second pixel includes a second light-emitting device and a second layer. The second light-emitting device emits second light toward the second layer. The second layer has a function of transmitting blue light. The third pixel includes a third light-emitting device and a third layer. The third light-emitting device emits third light toward the third layer. The third layer has a function of absorbing blue light and transmitting green light. The fourth pixel includes a fourth light-emitting device and a fourth layer.

Abstract: A novel display apparatus is provided. The display apparatus includes a display portion and a peripheral circuit for driving the display portion, and the display portion is provided to overlap with and above the peripheral circuit. The display portion include a plurality of pixels arranged in a matrix, and the plurality of pixels each have a function of emitting light. The peripheral circuit includes a first transistor, and the pixel includes a second transistor. A semiconductor layer included in the first transistor and a semiconductor layer included in the second transistor are formed using materials having different compositions.

Abstract: A highly reliable memory device is provided. The memory device includes a memory control unit that includes an input/output unit, a control unit, and a first management unit and a memory unit that includes a plurality of memory blocks. The first management unit includes a plurality of first memory elements, the control unit has a function of converting an address input through the input/output unit to an address of the memory block corresponding to the address, with use of a first management table retained in the plurality of first memory elements, and the first memory elements each include a ferroelectric. The control portion may include a function of not using a defective memory cell and may have a function of performing error correction of readout data.

Abstract: In a memory cell including a ferroelectric capacitor, data is read without data destruction. When the reading operation is performed in the memory cell including the ferroelectric capacitor, voltage applied to the counter electrode of the ferroelectric capacitor is gradually increased so as not to cause polarization destruction in the ferroelectric capacitor. A first reading operation from the memory cell is performed by applying a first voltage that does not cause polarization inversion of the ferroelectric layer to the capacitor, a second reading operation from the memory cell is performed by applying a second voltage that does not cause polarization inversion of the ferroelectric layer to the capacitor, and the second voltage is higher than the first voltage.

Abstract: A light-emitting element includes an EL layer between a pair of electrodes. The EL layer contains a first compound and a second compound. The first compound is a phosphorescent iridium metal complex having a LUMO level of greater than or equal to ?3.5 eV and less than or equal to ?2.5 eV, and the second compound is an organic compound having a pyrimidine skeleton. The light-emitting element includes an EL layer between a pair of electrodes. The EL layer contains a first compound and a second compound. The first compound is a phosphorescent iridium metal complex having a diazine skeleton, and the second compound is an organic compound having a pyrimidine skeleton.

Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor.

Abstract: In manufacturing a storage battery electrode, a method for manufacturing a storage battery electrode with high capacity and stability is provided. As a method for preventing a mixture for forming an active material layer from becoming strongly basic, a first aqueous solution is formed by mixing an active material exhibiting basicity with an aqueous solution exhibiting acidity and including an oxidized derivative of a first conductive additive; a first mixture is formed by reducing the oxidized derivative of the first conductive additive by drying the first aqueous solution; a second mixture is formed by mixing a second conductive additive and a binder; a third mixture is formed by mixing the first mixture and the second mixture; and a current collector is coated with the third mixture. The strong basicity of the mixture for forming an active material layer is lowered; thus, the binder can be prevented from becoming gelled.

Abstract: Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.

Abstract: A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed.

Abstract: The reading accuracy of an imaging device is increased. Clear image capturing is performed even in the case where the luminance is high. A reading circuit of the imaging device includes an amplifier portion and a conversion portion. The amplifier portion amplifies a potential difference between a first signal and a second signal that are sequentially input and outputs the amplified difference to the conversion portion. The conversion portion converts the output potential of the amplifier portion into a digital value. The amplifier portion is reset on the basis of a first reference potential and the first signal and amplifies the potential difference on the basis of a second reference potential that is different from the first reference potential and the second signal.

Abstract: A driving method of a semiconductor device that takes three-dimensional images with short duration is provided. In a first step, a light source starts to emit light, and first potential corresponding to the total amount of light received by a first photoelectric conversion element and a second photoelectric conversion element is written to a first charge accumulation region. In a second step, the light source stops emitting light and second potential corresponding to the total amount of light received by the first photoelectric conversion element and the second photoelectric conversion element is written to a second charge accumulation region. In a third step, first data corresponding to the potential written to the first charge accumulation region is read. In a fourth step, second data corresponding to the potential written to the second charge accumulation region is read.

Abstract: A display device that can be easily and more flexibly designed is provided. The display device includes a pixel circuit and a driver circuit in a display portion. The driver circuit includes a plurality of pulse output circuits. Each of the plurality of pulse output circuits has a function of driving a gate line. The pixel circuit is electrically connected to the gate line. Each of the plurality of pulse output circuits includes a first transistor. The pixel circuit includes a second transistor. A layer including the second transistor is over a layer including the first transistor, and the first transistor and the second transistor overlap with each other.

Abstract: A novel method for fabricating a display apparatus is provided. An anode is formed over an insulating layer, an EL layer is formed over the anode, and a cathode is formed over the EL layer. A plurality of light-emitting elements are formed without provision of a partition by selectively removing parts of the anode, the EL layer, and the cathode. A conductive layer having a light-transmitting property is formed to cover the plurality of light-emitting elements. The cathodes of the plurality of light-emitting elements are electrically connected to the conductive layer.

Abstract: Provided is a light-emitting device with high emission efficiency. Provided is a light-emitting device including an anode, a cathode, and an EL layer positioned therebetween; the EL layer includes a light-emitting layer, a first layer, and a second layer; the first layer is positioned between the anode and the light-emitting layer; the first layer is in contact with the second layer; the second layer contains a monoamine compound having an arylamine structure; a first group, a second group, and a third group are bonded to a nitrogen atom included in the amine in the monoamine compound; the first group is a group including a carbazole structure; the second group is a group including a dibenzofuran structure or a dibenzothiophene structure; the third group includes an aromatic hydrocarbon structure having 6 to 18 carbon atoms or a heteroaromatic hydrocarbon structure having 4 to 26 carbon atoms; and a refractive index of the first layer is lower than a refractive index of the light-emitting layer.