Abstract: A semiconductor device having a large storage capacity per unit area is provided. The semiconductor device includes a stack, and the stack includes a first insulator, a first conductor over the first insulator, and a second insulator over the first conductor. The stack includes a first opening provided in the first insulator, the first conductor, and the second insulator and an oxide on the inner side of the first opening. Furthermore, in the first opening, a third insulator is positioned on the outer side of the oxide, a second conductor is positioned on the inner side of the oxide, and a fourth insulator is positioned between the oxide and the second conductor. The third insulator includes a gate insulating layer positioned at a side surface of the first opening, a tunnel insulating layer positioned on the outer side of the oxide, and a charge accumulation layer positioned between the gate insulating layer and the tunnel insulating layer.

Abstract: A communication device capable of transmitting and receiving high-potential signals is provided. The communication device includes a duplexer including first to fourth transistors, a transmission terminal, a reception terminal, an antenna terminal, and first and second control terminals. The transmission terminal is electrically connected to one of a source and a drain of each of the first and second transistors. The reception terminal is electrically connected to one of a source and a drain of each of the third and fourth transistors. The antenna terminal is electrically connected to the other of the source and the drain of each of the second and fourth transistors. The first control terminal is electrically connected to gates of the second and third transistors. The second control terminal is electrically connected to gates of the first and fourth transistors. A semiconductor of each of the first to fourth transistors contains a metal oxide.

Abstract: An imaging device capable of executing image processing is provided. A structure is employed in which a photoelectric conversion element, a first transistor, a second transistor, and an inverter circuit are included; one electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor; the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor; the one of the source and the drain of the second transistor is electrically connected to an input terminal of the inverter circuit; and data obtained by photoelectric conversion is binarized and output.

Abstract: A novel authentication system is provided. In addition, a method for recording an unlocking history is provided. The authentication system includes an arithmetic device and an input/output device. The arithmetic device supplies first control data and second control data, and is supplied with a sensor signal. The input/output device includes an electric lock and a reading portion, and the electric lock is unlocked on the basis of the second control data. The reading portion is supplied with the first control data, supplies the sensor signal, and includes a light-emitting element and a pixel array. The light-emitting element emits light including infrared rays, the pixel array includes pixels, the pixels each include an imaging circuit and a photoelectric conversion element, the imaging circuit is electrically connected to the photoelectric conversion element, the imaging circuit includes a transistor, and the transistor includes an oxide semiconductor film.

Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.

Abstract: To provide an electronic device capable of a variety of display. To provide an electronic device capable of being operated in a variety of ways. An electronic device includes a display device and first to third surfaces. The first surface includes a region in contact with the second surface, the second surface includes a region in contact with the third surface, and the first surface includes a region opposite to the third surface. The display device includes first to third display regions. The first display region includes a region overlapping with the first surface, the second display region includes a region overlapping with the second surface, and the third display region includes a region overlapping with the third surface. The first display region has a larger area than the third display region.

Abstract: A semiconductor device using a pass transistor is provided. The semiconductor device includes a first circuit, a second circuit, a plurality of input terminals, and an output terminal. The first circuit includes a plurality of first transistors functioning as pass transistors, and the second circuit includes a plurality of second transistors functioning as pass transistors. Note that the number of the first transistors is larger than the number of the second transistors, a gate of the first transistor is supplied with a first signal, and a gate of the second transistor is supplied with a second signal. The first circuit is supplied with grayscale signals through x input terminals, and the first circuit selects y grayscale signals of the grayscale signals with the first signal. The second circuit is supplied with y (y<x) grayscale signals, the second circuit outputs z (z<y) grayscale signals of the y grayscale signals to the output terminal with the second signal.

Abstract: An imaging device with a novel structure is provided. The imaging device includes an imaging region provided with a plurality of pixels. The plurality of pixels included in the imaging region include a first pixel and a second pixel. The imaging device has a function of selecting a first region or a second region. The first region includes the same number of pixels as the second region. The first region includes at least the first and second pixels. The second region includes at least the second pixel. The pixels included in the first region or the second region have a function of outputting imaging signals obtained by the pixels. The imaging device generates first image data by concurrently reading the imaging signals output from the pixels included in the first region and performing arithmetic operation on the signals.

Abstract: A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.

Abstract: To provide a method for driving a semiconductor device, by which influence of variation in threshold voltage and mobility of transistors can be reduced. The semiconductor device includes an n-channel transistor, a switch for controlling electrical connection between a gate and a first terminal of the transistor, a capacitor electrically connected between the gate and a second terminal of the transistor, and a display element. The method has a first period for holding the sum of a voltage corresponding to the threshold voltage of the transistor and an image signal voltage in the capacitor; a second period for turning on the switch so that electric charge held in the capacitor in accordance with the sum of the image signal voltage and the threshold voltage is discharged through the transistor; and a third period for supplying a current to the display element through the transistor after the second period.

Abstract: A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film is higher than or equal to 80° C. and lower than or equal to 400° C., and the flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of the total flow rate of the gas.

Abstract: A display device having a high display quality is provided. A display device that can perform desired display without image data conversion is provided. The display device includes a first pixel. The first pixel includes a first light-emitting element, a color conversion layer, and a first memory circuit. The first light-emitting element exhibits blue light. The color conversion layer has a function of converting light emitted by the first light-emitting element into light having a longer wavelength. A first image signal and a first correction signal are supplied to the first pixel. The first memory circuit has a function of retaining the first correction signal and a function of adding the first correction signal to the first image signal. The first pixel has a function of displaying an image using the first image signal and the first correction signal.

Abstract: A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.

Abstract: To provide a mobile phone which can be used without hampering convenience in a condition where functions of the mobile phone are switched and can improve operability. The mobile phone includes an optical sensor, a display element, a pixel circuit portion where a plurality of pixels having a plurality of transistors are arranged in matrix, an optical sensor control circuit which is connected to an optical sensor driver circuit for driving the optical sensor and reads a signal from the optical sensor, a display portion control circuit which is connected to a display element driver circuit for driving the display element and outputs an image signal for displaying an image on a display portion, a gradient detection portion for outputting a signal in accordance with a gradient of the mobile phone, and an arithmetic circuit for performing display in the pixel circuit portion by switching image signals output to the display portion control circuit with a signal from the gradient detection portion.

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: Provided is a positive electrode active material which suppresses a reduction in capacity due to charge and discharge cycles when used in a lithium ion secondary battery. A covering layer is formed by segregation on a superficial portion of the positive electrode active material. The positive electrode active material includes a first region and a second region. The first region exists in an inner portion of the positive electrode active material. The second region exists in a superficial portion of the positive electrode active material and part of the inner portion thereof. The first region includes lithium, a transition metal, and oxygen. The second region includes magnesium, fluorine, and oxygen.

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract: A wireless power feed system with high transfer efficiency of electric power is disclosed. The wireless power feed system includes a power feeding device and a power receiving device, wherein the power feeding device includes a first electromagnetic coupling coil that is connected to an AC power source via a directional coupler; a first resonant coil; a switch connected to the opposite ends of the first resonant coil; a control circuit which conducts switching on/off of the switch based on a parameter of an amplitude of a reflective wave detected by the directional coupler; and an analog-digital converter provided between the first electromagnetic coupling coil and the control circuit; and the power receiving device includes a second resonant coil; and a second electromagnetic coupling coil, and wherein the first electromagnetic coupling coil is provided between the first resonant coil and the second resonant coil.

Abstract: To provide an inexpensive display device. The display device includes a pixel and an IC chip. The pixel includes a first pixel circuit including a display element and a second pixel circuit including a light-receiving device. The one IC chip includes a control circuit, a data driver circuit, and a read circuit. The first and second pixel circuits are electrically connected to the read circuit. The control circuit has a function of controlling driving of the data driver circuit and the read circuit. The data driver circuit has a function of supplying image data to the first pixel circuit. The read circuit has a function of outputting a monitor signal corresponding to a monitor current when the monitor current flows through the first pixel circuit. The read circuit also has a function of outputting an imaging signal corresponding to imaging data acquired by the second pixel circuit.