Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductive type, an active region configured to generate electromagnetic radiation, a second region of a second conductive type and a coupling-out surface configured to couple-out the electromagnetic radiation, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, and wherein the coupling-out surface is arranged plane-parallel to the rear surface.

Abstract: An optical encoder comprises an emitter; a receiver; a reflector; and a code carrier, wherein the emitter emits electromagnetic radiation along an emission axis in the direction of the reflector and the reflector deflects the electromagnetic radiation along a reception axis in the direction of the receiver. The code carrier is movably supported and has a sequence of code sections to interrupt or to give way for the emitted electromagnetic radiation to impinge on the detector in dependence on the position of the code carrier, wherein the emission axis and the reception axis extend at an alignment angle with respect to one another that has a value in the range from 30 degrees to 150 degrees.

Abstract: In an embodiment an arrangement includes a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component includes a semiconductor body having an active region configured to emit electromagnetic radiation, a radiation outlet side configured to couple out the electromagnetic radiation, a rear face opposite to the radiation outlet side, and a contact structure arranged on the rear face, an output element, an electrically insulating insulation layer and an electrical connection structure, wherein the insulation layer is arranged between side faces of adjacent semiconductor components, wherein the output element is arranged at the radiation outlet sides of the semiconductor components, wherein the electrical connection structure is electrically conductively connected with the contact structure, and wherein the connection structure includes an adhesive layer, a growth layer and a co

Abstract: In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

Abstract: In an embodiment a method for producing a lighting device includes providing a wafer assemblage having a semiconductor layer sequence arranged on a carrier substrate, separating the wafer assemblage into a plurality of first optoelectronic semiconductor chips, each comprising a section of the semiconductor layer sequence and of the carrier substrate, transferring at least some of the first optoelectronic semiconductor chips to a first auxiliary carrier, wherein the first auxiliary carrier has contact pads on a main surface, wherein the contact pads are surrounded and delimited in each case by a contour, and wherein each of the first optoelectronic semiconductor chips is arranged on a contact pad, cutting, on the first auxiliary carrier, to size the first optoelectronic semiconductor chips in order to adapt the first optoelectronic semiconductor chips to a predefined shape such that the each first optoelectronic semiconductor chip lies completely within the contour of an assigned contact pad, and transferring

Abstract: In an embodiment a method for producing optoelectronic semiconductor devices includes providing at least one optoelectronic semiconductor chip with at least one contact side, generating at least one coating region and at least one protection region on the contact side or on at least one of the contact sides, applying at least one liquid coating material to the at least one contact side, wherein the at least one coating material wets the at least one coating region and does not wet the at least one protection region and solidifying the at least one coating material into at least one electrical contact structure on the at least one coating region such that the semiconductor chip is capable of being energized through the at least one contact structure.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment an optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a radiation exit surface and side surfaces running transversely with respect to the radiation exit surface, the optoelectronic semiconductor chip configured to emit primary radiation through the radiation exit surface, a conversion element arranged on the radiation exit surface, the conversion element configured to convert at least part of the primary radiation into secondary radiation and including a stack of at least two conversion layers and a reflective element laterally surrounding the optoelectronic semiconductor chip, wherein a lateral extent of the conversion layers decreases from a layer which is closest to the radiation exit surface to a layer which is most distant from the radiation exit surface, wherein the conversion element includes a part laterally extending beyond the radiation exit surface and being concavely curved, wherein the conversion element is partly arranged on the reflectiv

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment an optoelectronic component includes a carrier, an optoelectronic semiconductor chip and an encapsulation, wherein the semiconductor chip is fixed on a mounting surface of the carrier and is electrically conductively connected with the carrier, wherein the encapsulation is located around the semiconductor chip and covers the mounting surface at least partially, wherein the encapsulation includes a first layer and a second layer, wherein the first layer is arranged between the mounting surface and the second layer, wherein each of the first layer and the second layer is based on a silicone, and wherein the first layer and the second layer are directly adjacent to each other in a region of an interface.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment a nanostamping method includes forming a nanostructure in a layer of optical embossing material on a first carrier substrate by a forming stamp having a nano-relief, wherein the nanostructure comprises a plurality of nano-elevations which are connected via an embossing material base, generating a coated nanostructure by covering the nano-elevations with a filler material layer, wherein the filler material layer and the optical embossing material comprise different refractive indices, applying a second carrier substrate on the coated nanostructure, detaching the first carrier substrate and removing a material of the embossing material base.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment, an optoelectronic device includes a carrier, at least one optoelectronic semiconductor component arranged on an upper side of the carrier and at least one light channel associated with the optoelectronic semiconductor component which extends between a first end of the light channel which is distant from a light-active surface of the semiconductor component and which includes an opening into the outer space and a second end of the light channel including an opening directed towards the light-active surface of the semiconductor component, wherein the at least one light channel extends between its respective first and second ends in a non-rectilinear manner, wherein the light channel includes a cavity extending between the two ends, wherein an inner wall surrounds the cavity, and wherein at least a section of the inner wall is reflective.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic semiconductor device may include a plurality of picture elements, each of which include a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type arranged one above the other to form a semiconductor layer stack. The optoelectronic semiconductor device further includes separating elements arranged between adjacent picture elements and extend in a horizontal direction along a boundary of the adjacent picture element, adjoin the first and the second semiconductor layers, respectively, and extend in the vertical direction through the first and the second semiconductor layers, respectively.