Patents Assigned to Semiconductors GmbH
  • Multi-pixel display device with light-guiding structures and light-emitting semicondutor chips disposed on interated circuit
    Patent number: 11984435
    Abstract: A multi-pixel display device with an integrated circuit, a plurality of light-emitting semiconductor chips disposed on the integrated circuit, a display area having a plurality of pixels, each of the light-emitting semiconductor chips being associated with one of the pixels, a light-directing element disposed between the plurality of light-emitting semiconductor chips and the display area and adapted to direct the light of each light-emitting semiconductor chip from the plurality of light-emitting semiconductor chips to its associated pixel.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: May 14, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Thomas Schwarz, Frank Singer
  • Method for operating a light emitting diode arrangement, method for characterizing a light emitting diode, and light emitting diode arrangement
    Patent number: 11985740
    Abstract: A method for operating a light emitting diode arrangement with at least one light emitting diode includes the steps of: a) determining at least one instantaneous current-voltage value pair; b) matching the instantaneous current-voltage value pair with an original current-voltage value pair; and c) determining an updated current feed based on the matching and driving the light emitting diode with the updated current feed.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: May 14, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Michael Binder, Holger Specht, Maximilian Tauer
  • Radiation emitting semiconductor chip and radiation emitting semiconductor device
    Patent number: 11948966
    Abstract: In an embodiment a radiation emitting semiconductor chip includes a semiconductor layer sequence with a plurality of active regions and a main extension plane, wherein each active region has a main extension direction, wherein each active region is configured to emit electromagnetic radiation from an emitter region extending parallel to the main extension plane, wherein at least two active regions overlap in plan view, wherein the emitter regions are arranged at grid points of a regular grid connected by at least one grid line, and wherein the main extension direction of at least one active region encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid.
    Type: Grant
    Filed: March 4, 2020
    Date of Patent: April 2, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Tansen Varghese, Bruno Jentzsch
  • METHOD FOR PRODUCING A PHOTODIODE
    Publication number: 20240105878
    Abstract: A method of producing a photodiode having a layer structure that comprises a front-side first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type into which the first semiconductor layer is embedded, and an adjoining rear-side third semiconductor layer of the second conductivity type having a higher doping concentration in comparison with the second semiconductor layer includes providing a substrate wafer composed of a semiconductor material. A layer sequence having a first, second, and third semiconductor region on and/or in the substrate wafer is produced. The first and second semiconductor regions form the first and second semiconductor layers, and the layer sequence is partly removed from the rear side of the substrate wafer until the third semiconductor region is reduced to the thickness of the third semiconductor layer.
    Type: Application
    Filed: December 3, 2021
    Publication date: March 28, 2024
    Applicant: VISHAY SEMICONDUCTOR GMBH
    Inventors: Manuel SCHMIDT, Simon RICHTER, Christian SPECHT
  • Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
    Patent number: 11935989
    Abstract: An optoelectronic semiconductor chip may include a first region doped with a first dopant, a second region doped with a second dopant, an active region between the first and second regions, a first contact layer having an electrically conductive material and covering the first region. An insulating layer may cover the first contact layer and include first openings, and the insulating layer may include a second contact layer having an electrically conductive material and covering the insulating layer and the first openings. The first openings may completely penetrate the insulating layer, and the second contact layer may include second openings and/or a third contact layer comprising an electrically conductive material is arranged in the first openings in each case between the second contact layer and the insulating layer.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: March 19, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Fabian Kopp, Attila Molnar, Roland Heinrich Enzmann
  • Radiation emitting semiconductor chip, radiation emitting semiconductor device and head lamp
    Patent number: 11935994
    Abstract: A radiation emitting semiconductor chip may include a radiation emitting surface, an epitaxial semiconductor layer sequence having active regions, and a mounting surface facing the radiation emitting surface. The mounting surface may include a plurality of first and second solderable contact surfaces. Each active region may be suppliable with current with a respective first and second solderable contact surface. The first solderable contact surfaces may be arranged in an inner region of the mounting surface. The second solderable contact surface may be arranged in an edge region of the mounting surface. Furthermore, a radiation emitting semiconductor device and a head lamp having such a semiconductor chip may also be useful.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: March 19, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Guido Weiss
  • Semiconductor structure arrangement, methods for producing a semiconductor structure arrangement and optoelectronic device
    Patent number: 11935982
    Abstract: An arrangement is disclosed. The arrangement comprises at least one semiconductor structure configured to convert a primary radiation into a secondary radiation; an encapsulation layer covering the at least one semiconductor structure; and at least one reflective layer arranged on the encapsulation layer. The semiconductor structure is arranged in a center of the arrangement, and a lateral extent of the arrangement is chosen such that an optically resonant condition is fulfilled for a wavelength of the secondary radiation in the encapsulation layer. Methods for producing an arrangement and an optoelectronic device are also disclosed.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: March 19, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: David O'Brien, Erik Johansson
  • Vital sign sensor and method for manufacturing a vital sign sensor
    Patent number: 11931185
    Abstract: In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.
    Type: Grant
    Filed: March 24, 2020
    Date of Patent: March 19, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Sergey Kudaev, Reiner Windisch, Dennis Sprenger, Ralph Wirth, Thomas Klafta
  • Phosphor process for producing a phosphor and optoelectronic device
    Patent number: 11932791
    Abstract: A phosphor having the general formula EA7A2T1t1T2t2 T3t3NnOo:RE. EA is selected from the group of divalent elements. A is selected from the group of monovalent elements. T1 is selected from the group of trivalent elements. T2 is selected from the group of tetravalent elements. T3 is selected from the group of pentavalent elements. RE is an activator element. 16+3 t1+4 t2+5 t3?3n?2 o=0. t1+t2+t3=5; n+o=16; 0?t1?4; 0?t2?5; 0?t3?5; 0?n?9; 7?o?16.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: March 19, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Simon Peschke, Stefan Lange
  • Method for producing an optoelectronic device
    Patent number: 11923487
    Abstract: In an embodiment a method includes providing a carrier with an optoelectronic semiconductor chip-component arranged on a top side of the carrier, arranging a first potting material on the top side of the carrier, arranging a second potting material on the first potting material, wherein the second potting material comprises a higher density than the first potting material, wherein a top side of the optoelectronic semiconductor chip-component is covered by neither the first potting material nor the second potting material and allowing a force to act on the first potting material and the second potting material such that the second potting material migrates in a direction toward the top side of the carrier.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: March 5, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Gregory Bellynck, Ivar Tangring
  • Yellow luminophore and light source
    Patent number: 11920071
    Abstract: A luminophore having the general empirical formula X?1?xA?y(Al1+zA?3?z)O4:E? that crystallizes in a tetragonal crystal system. X? may be Mg, Ca, Sr, Ba, and combinations thereof; A? may be Li, Na, K, Rb, Cs, and combinations thereof; E? may be Eu, Ce, Yb, Mn, and combinations thereof; 0<x<0.25; y?x; and z=0.5(2x?y).
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: March 5, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Daniel Bichler, Simon Dallmeir, Christian Koch, Simon Peschke, Gudrun Plundrich, Philipp Schmid, Christiane Stoll, Johanna Strube-Knyrim, Jutta Thoma, Mark Vorsthove
  • Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
    Patent number: 11888083
    Abstract: In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 1019 cm?3.
    Type: Grant
    Filed: July 11, 2022
    Date of Patent: January 30, 2024
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
  • Photosensitive semiconductor component, method for forming a photosensitive semiconductor component
    Patent number: 11876144
    Abstract: A photosensitive transistor is disclosed herein that includes: a semiconductor substrate of the first conductivity type as a collector layer; above it a less doped layer of the first conductivity type having regions of different thickness; a semiconductor base layer of the second conductivity type above at least parts of the regions of the less doped layer; and an emitter layer of the first conductivity type above at least parts of the base layer, but not above at least one part of the part of the base layer disposed above the thinner region of the less doped layer.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: January 16, 2024
    Assignee: Vishay Semiconductor GmbH
    Inventor: Manuel Schmidt
  • Method for producing an electronic component, wherein a semiconductor chip is positioned and placed on a connection carrier, corresponding electronic component, and corresponding semiconductor chip and method for producing a semiconductor chip
    Patent number: 11842980
    Abstract: The method of producing an electronic component (100) comprises a step A) of providing a semiconductor chip (2) having an underside (20), having a plurality of contact pins (21), and having at least one positioning pin (25) protruding from the underside. The contact pins are adapted to electrically contact the semiconductor chip. The positioning pin narrows in the direction away from the underside and protrudes further from the underside than the contact pins. The semiconductor chip is placed on the connection carrier, with the contact pins each being inserted into a contact recess and the positioning pin being inserted into the positioning recess. The contact pins are immersed in the molten solder material.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: December 12, 2023
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Mathias Wendt, Simeon Katz, Pascal Porten
  • Optoelectronic measuring device for measuring an intensity of electromagnetic radiation
    Patent number: 11835384
    Abstract: In an embodiment, an optoelectronic measuring device includes a first detector configured to provide a first detector signal, a second detector configured to provide a second detector signal, wherein each of the first detector and the second detector is configured to detect electromagnetic radiation, a signal difference determiner configured to generate a difference signal by subtracting the second detector signal from the first detector signal and a spectral filter arranged in a beam path upstream of the second detector, wherein the spectral filter is configured to filter the electromagnetic radiation before detection by the second detector, wherein the optoelectronic measuring device is configured to measure an intensity of the electromagnetic radiation impinging on the optoelectronic measuring device.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: December 5, 2023
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Daniel Dietze, Wolfgang Zinkl
  • Under display sensors, systems and methods
    Patent number: 11830458
    Abstract: A display device and a method for operating a display device disclosed herein include transmitting a proximity signal from a proximity sensor, the proximity sensor being positioned under a lower surface of a surface layer with an illumination component being positioned between the surface layer and the proximity sensor, in response to the illumination component being deactivated, receiving a reflected proximity signal based on the proximity signal, determining a proximity value based on the reflected proximity signal and modifying an operation of the display device based on the proximity value. The modifying the operation of the display device includes any one or a combination of activating the illumination component, deactivating the illumination component, or modifying a property of the illumination component.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: November 28, 2023
    Assignee: Vishay Semiconductor GmbH
    Inventors: Cheng Chieh Huang, Wei Chien Wang, Yu Hao Kao
  • Optoelectronic component, method for producing an optoelectronic component and lighting device
    Patent number: 11824143
    Abstract: In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: November 21, 2023
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Günter Spath, Daniel Leisen, Simon Jerebic, Matthias Kiessling
  • Electrical contact for semiconductor package
    Patent number: 11811180
    Abstract: Provided herein are semiconductor packages with improved electrical contacts (e.g. pins). In some embodiments, an assembly may include a substrate and an electrical contact coupled to the substrate, the electrical contact consisting of a first component defined by a complex 3D designed receiving pin. The electrical contact may further include a second component defined by another complex 3D designed penetrating pin, wherein the first component engages the second component to deform mechanically and to weld when the first component and the second component are coupled together.
    Type: Grant
    Filed: August 31, 2021
    Date of Patent: November 7, 2023
    Assignee: IXYS Semiconductor GmbH
    Inventors: Yong Ai-Ong, Thomas Spann
  • Nanoparticle, structure, and method for producing a nanoparticle
    Patent number: 11795384
    Abstract: A nanoparticle is specified. The nanoparticle comprises a nanocrystal configured to convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, a first encapsulation comprising pores which reach into or through the first encapsulation, and a second encapsulation which is different from the first encapsulation, wherein the second encapsulation abuts at least one of the pores. Furthermore, a structure comprising a plurality of nanoparticles and a method for producing nanoparticle is specified.
    Type: Grant
    Filed: December 2, 2021
    Date of Patent: October 24, 2023
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Erik Johansson, Robert Fitzmorris, Peter Chen
  • Optoelectronic sensor
    Patent number: 11799048
    Abstract: In an embodiment an optoelectronic sensor includes a radiation-emitting semiconductor region, a radiation-detecting semiconductor region, a first polarization filter arranged above the radiation-emitting semiconductor region and including a first polarization direction and a second polarization filter arranged above the radiation-detecting semiconductor region and including a second polarization direction, wherein the first polarization direction and the second polarization direction are perpendicular to each other, wherein a radiation-reflecting or radiation-absorbing layer is arranged on side flanks of the radiation-emitting semiconductor region and/or the radiation-detecting semiconductor region and/or the first polarization filter and/or the second polarization filter.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: October 24, 2023
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Daniel Richter, Luca Haiberger