Abstract: A power semiconductor system and method for producing a power semiconductor system. In one embodiment, the application relates to a power semiconductor system, comprising a line system for a fluid working medium; wall element having an outer side and an inner side; and a power semiconductor circuit arranged at the outer side of the wall element, wherein the inner side of the wall element forms a fluid-tight wall of the line system.

Abstract: A circuit comprising at least one parallel-connected partial circuit for feeding at least one inverter circuit. A partial circuit consists of an unregulated voltage source having a temporally varying DC output voltage, a voltage doubling circuit and a voltage regulating circuit with an associated regulating device. In the inventive method, the voltage doubling circuit doubles the voltage of the unregulated voltage source. The regulation of the current/voltage characteristic curve, the MPP tracking, of the unregulated voltage source is effected by the regulating device of the voltage regulating circuit.

Abstract: A power semiconductor module comprising a substrate. The power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are electrically conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common side in relation to the first and second DC voltage load current connection elements. The invention provides a power semiconductor module having a particularly low-inductance construction.

Abstract: A method for securing electronic components, in particular power semiconductor components such as diodes, transistors or thyristors, and connection elements, to a substrate by pressure sintering. The method includes: applying a pastelike layer, made up of a metal powder and a solvent, to a supporting film; drying the pastelike layer; applying at least one component to the dried layer; subjecting the at least one component, the supporting film and the dried layer to pressure, as a result of which the adhesive force between the layer and the component becomes greater than that between the layer and the supporting film; lifting off the at least one component, with the layer adhering to it, from the supporting film; positioning the component, with the layer adhering to it, to the substrate; and subjecting the substrate and the component to pressure, for connecting them by sintering.

Abstract: A method for the repetitive transmission of a signal representing a binary value via a transformer section of a driver of a power semiconductor. Transmitting for the first value a first pulse packet as a sequence of a positive pulse and a negative pulse or for the second value a second pulse packet as a sequence of a negative pulse and a positive pulse to the input of the transformer. The respective pulse packets are repetitively fed to the transformer, one of the first value and the second value is detected at the output of the transformer from the sequence of the polarity of an output variable within a transmitted pulse packet.

Abstract: A circuit for potential-isolated power transfer from a primary side to a secondary side with two secondary-side output DC voltages, wherein the absolute value of the first output DC voltage is higher than the absolute value of the second output DC voltage. The circuit comprises a transformer, which has first and second windings with a common center tap on the primary side and a third winding on the secondary side. The ratio of the number of turns of the first and second windings is a function of the ratio of the two secondary-side output DC voltages. The center tap is connected to a DC voltage source, the first winding is connected to a first transistor and the second winding is connected to a second transistor. The transistors are connected to the primary-side reference potential. The output voltages are present at two diodes connected to the secondary-side third winding.

Abstract: A method for producing a plurality of integrated semiconductor components on a carrier, in which an active basic structure is introduced into the carrier in a continuous fashion at least across a portion of the boundaries of the semiconductor components to be created. The regions of the semiconductor components on the carrier are defined, and a covering layer is applied to the carrier in the region of each semiconductor component with the aid of a mask. The carrier is severed to form the individual semiconductor components at the boundaries thereof.

Abstract: A semiconductor arrangement, in particular a power semiconductor arrangement, in which a semiconductor having a top side provided with contacts is connected to an electrical connection device formed from a film assembly wherein an underfill is provided between the connection device and the top side of the semiconductor. The underfill has a matrix formed from a preceramic polymer.

Abstract: An arrangement having a cooling circulation, a plurality of modular power semiconductor modules and at least one capacitor, wherein a power semiconductor module has a power electronics switch and a cooling device, which is capable of carrying a flow of a cooling fluid, for cooling the switch, the cooling device having at least one cooling face, and four connection devices for the cooling fluid. The connection devices are arranged in pairs on main sides of the power semiconductor module. The power semiconductor modules have their main sides strung together modularly by connecting corresponding connection devices on successive power semiconductor modules. To this end, at least two successive power semiconductor modules have a capacitor arranged between them which, for its part, is cooled by means of the cooling circulation of the cooling fluid as provided by the arrangement.

Abstract: A power semiconductor module, and an arrangement using the module. The module has a basic parallelepipedal shape with opposed pairs of main, longitudinal and narrow sides, a cooling device which is capable of carrying a flow of a cooling fluid, having a power electronics switch and a housing. The cooling device has a cooling volume with at least one cooling face and four connection devices which are arranged in pairs on the main sides. In addition, the connection devices carry the cooling fluid and are designed as a flow inflow and a flow outflow and as a return inflow and a return outflow, respectively. The power electronics switch has load input connection devices and load output connection devices which are arranged on one or both longitudinal sides and a control connection device which is arranged on a narrow side of the module.

Abstract: A modularly constructed power converter arrangement has two end-side elements and at least one power converter module arranged therebetween. One end-side element has, a fan of an air cooling device, while the other end-side element has, aligned with the fan, cutouts acting as air passages. At least one end-side element has an electrical connection device. The at least one power converter module has, as part of the cooling device, a heat sink, through which air can flow from one end-side element to the other and on which is arranged at least one power semiconductor module connected to a control device and to a capacitor device. For this purpose, the at least one power converter module has a housing, which is open at the end sides and which can be connected in each case at the end sides to an end-side element or a further power converter module.

Abstract: A power electronic system with a cooling device, and a method for producing the system, comprising a plurality of submodules, each submodule having a first planar insulating material body, one first conductor track cohesively connected thereto, one power switch arranged on the conductor track, at least one internal connecting device composed of an alternate layer sequence of at least one electrically conductive film and at least one electrically insulating film, wherein at least one electrically conductive layer forms at least one second conductor track, and comprising external connection elements. In this case, the submodules are arranged cohesively or in a force-locking manner and in a manner spaced apart from one another with their first main surface on the cooling device. At least one second conductor track at least partially covers first conductor tracks of two submodules, electrically connects them to one another and covers an interspace between the submodules.

Abstract: Apparatus and a method for operating the apparatus to remove at least one chip-type semiconductor component from an adhesive film. The method comprises: arranging a lifting device with respect to the film, wherein a contact region of the lifting device bears against a second main surface of the film, opposite a chip-type semiconductor component that is arranged on a first main surface and is to be lifted off. Then, applying either a constant vacuum to a plurality of suction cutouts of the lifting device, by means of an assigned vacuum regulating device, or applying different values of the vacuum for different suction cutouts or groups of suction cutouts. Next, partially deforming the film in the contact region by using lifting means arranged in assigned cutouts of the lifting device to lift the film. Finally, using a removal device to remove the at least one semiconductor component from the film.

Abstract: A capacitor system and a method for producing a capacitor system. The capacitor system may be used in a power semiconductor module. In one embodiment, the capacitor system comprises a metal shaped body having a depression; a capacitor arranged at least partly in the depression; a spacer composed of electrically insulating material, the spacer being arranged at least partly between the capacitor and the metal shaped body in the depression; and an electrically insulating potting material provided in the depression, wherein the potting material fixes the capacitor in the depression so that the capacitor does not touch the metal shaped body.

Abstract: A power semiconductor system and method for producing a power semiconductor system. In one embodiment, the application relates to a power semiconductor system, comprising a line system for a fluid working medium; wall element having an outer side and an inner side; and a power semiconductor circuit arranged at the outer side of the wall element, wherein the inner side of the wall element forms a fluid-tight wall of the line system.

Abstract: A semiconductor component having at least one pn junction and an associated production method. The semiconductor component has a layer sequence of a first zone having a first dopant. The first zone faces a first main area. Adjacent to the first zone are a second zone having a low concentration of a second dopant, a subsequent buffer layer, the third zone, also having the second dopant and a subsequent fourth zone having a high concentration of the second dopant. The fourth zone faces a second main area. In this case, the concentration of the second doping of the buffer layer is higher at the first interface of the barrier layer with the second zone than at the second interface with the fourth zone. According to the invention, the buffer layer is produced by ion implantation.

Abstract: An arrangement comprising: at least one power semiconductor module and a transport packaging. The power semiconductor module has a base element, a housing and connection elements. The transport packaging has a cover layer, an interlayer with a respective cutout assigned to the power semiconductor module, and a cover film. The cover layer is generally planar, and has a first main surface facing the power semiconductor module. The interlayer is arranged on the first main surface of the cover layer. The power semiconductor module is arranged in the cutout, on the first main surface of the cover layer, wherein the base element of the power semiconductor module is disposed on the first main surface of the cover layer. The cover film bears on and covers substantial parts of the housing of the power semiconductor module. The cover film is connected to the first main surface of the interlayer.

Abstract: A method for the repetitive transmission of a signal representing a binary value via a transformer section of a driver of a power semiconductor. Transmitting for the first value a first pulse packet as a sequence of a positive pulse and a negative pulse or for the second value a second pulse packet as a sequence of a negative pulse and a positive pulse to the input of the transformer. The respective pulse packets are repetitively fed to the transformer, one of the first value and the second value is detected at the output of the transformer from the sequence of the polarity of an output variable within a transmitted pulse packet.

Abstract: A pressure-contact power semiconductor module is arranged on a heat sink. The power semiconductor module is used with at least one substrate provided with conductor tracks and power semiconductor components. The module has a mounting body, on the underside of which the at least one substrate is arranged, and which is formed with cutouts. The module also includes a load connection element which is provided with contact feet that project away from strip sections and make pressure contact with the conductor tracks. The power semiconductor module additionally has a dimensionally stable cover, which covers the mounting body on all sides and is connected to the mounting body by means of snap-action latching connections. At least one pad element is restrained between the cover and the strip sections of the load connection elements.

Abstract: A converter arrangement comprising a switchgear cabinet for a plurality of converter assemblies forming respective main modules and each consisting of submodules, formed as a switching module and a capacitor module. The switchgear cabinet has connection devices for electrical connection of the converter assemblies and also, for each converter assembly, a rail system for the mechanical arrangement thereof. The capacitor module has a DC voltage contact device for electrical connection to the assigned switching module, and also sliding elements. The switching module has a cooling device, power semiconductor modules and also dedicated sliding elements. The sliding elements of the submodules are arranged in a stacked manner in the same rails of the rail system of the switchgear cabinet.