Abstract: A power semiconductor device comprising: a body, a substrate and power semiconductor components arranged on and connected to the substrate. The device has electrically conductive load connection elements and an integrally formed housing which runs laterally around the components. The body has a main outer surface which runs laterally around the components and which is at least partially covered by an elastic, electrically nonconductive, integrally formed, structured sealing element which runs laterally around the components. A section of the sealing element is arranged between the housing and the main outer surface of the body. The housing and the main outer surface of the body are pressed against the sealing element, which seals off the housing from the main outer surface of the body. The invention provides a compact device whose load connection elements are reliably electrically insulated from the body and whose housing is reliably sealed off from the body.

Abstract: A power semiconductor device comprising a first housing having a cutout with an opening, and a second housing. The device has a load element having external and internal sections, and a feedthrough section pressing through the opening. The feedthrough section has a first outer edge region which tapers laterally towards a first outer edge thereof and a second outer edge region which tapers laterally towards a second outer edge thereof. The first and second outer edge regions face away from one another. The first outer edge is near the lateral first end of the opening and the second outer edge is near the lateral second end of the opening. A first seal is positioned between the first housing and the feedthrough section and a second seal is positioned between the second housing and the feedthrough section. The seals contact one another laterally from the first and second outer edges.

Abstract: A 3-level power converter device with power semiconductor components including a first direct voltage positive potential terminal, a first direct voltage negative potential terminal, and first and second neutral voltage potential terminals. The first and second neutral voltage potential terminals are electrically conductively connected. The first direct voltage positive potential terminal and the first neutral voltage potential terminal form a first terminal pair, and the second neutral voltage potential terminal and the first direct voltage negative potential terminal form a second terminal pair. The first and second terminal pairs are arranged one behind another in a second direction. The first direct voltage positive potential terminal and the first neutral voltage potential terminal are arranged one above another in a third direction, and the second neutral voltage potential terminal and the first direct voltage negative potential terminal are arranged one above another in the third direction.

Abstract: A power semiconductor module, and method for its manufacture, comprising a first housing part having a cutout and a DC voltage load connection apparatus forming a structural unit, wherein the DC voltage load connection apparatus has first and second DC voltage load connection elements. The first DC voltage load connection element has a first leadthrough section arranged in the cutout, and the second DC voltage load connection element has a second leadthrough section arranged in the cutout forming a gap therebetween. The first and second leadthrough sections are sheathed by an elastomer, which fills the gap, is cohesively connected to the first and second leadthrough sections and seals off the first and second leadthrough sections with respect to the first housing part. The inventive power semiconductor module exhibits a high resistance to thermal cycling, and the distance between the DC voltage load connection elements can be configured to be small.

Abstract: A method for producing a power electronic switching device comprising a substrate, having a power semiconductor component arranged thereon; a connection device, and terminal devices.

Abstract: A power semiconductor module, and an arrangement using the module. The module has a basic parallelepipedal shape with opposed pairs of main, longitudinal and narrow sides, a cooling device which is capable of carrying a flow of a cooling fluid, having a power electronics switch and a housing. The cooling device has a cooling volume with at least one cooling face and four connection devices which are arranged in pairs on the main sides. In addition, the connection devices carry the cooling fluid and are designed as a flow inflow and a flow outflow and as a return inflow and a return outflow, respectively. The power electronics switch has load input connection devices and load output connection devices which are arranged on one or both longitudinal sides and a control connection device which is arranged on a narrow side of the module.

Abstract: An actuating circuit having a primary-side circuit part with an actuating logic circuit and a primary-side reference potential, and four secondary-side circuit parts each having one driver stage designed for actuating a phase of a three-level inverter and a first to fourth semiconductor switch, wherein each semiconductor switch and the secondary-side circuit part assigned thereto has a respective first to fourth secondary-side reference potential, and wherein in each case a level shifter connects the primary-side circuit part to the respective secondary-side circuit part and thus is assigned in each case to both circuit parts. In this connection, the primary-side reference potential corresponds to the first secondary-side reference potential. Furthermore, at least the actuating logic circuit, the first and second level shifters and the first and second driver stages are monolithically integrated.

Abstract: An apparatus and an associated method for receiving and positioning a plurality of spaced-apart power semiconductor modules using a molded positioning body. The molded positioning body has a planar first main face and a plurality of receptacles for receiving the power semiconductor modules therein. Each receptacle has a stop means, by which a main face of each power semiconductor module is positioned plane-parallel with one another and in alignment with the first main face of the molded positioning body. The receptacle is embodied as tapering inwardly in the direction of the first main face, beginning at the second main face.

Abstract: A power semiconductor module comprising a substrate. The power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are electrically conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common side in relation to the first and second DC voltage load current connection elements. The invention provides a power semiconductor module having a particularly low-inductance construction.

Abstract: An arrangement having a cooling circulation, a plurality of modular power semiconductor modules and at least one capacitor, wherein a power semiconductor module has a power electronics switch and a cooling device, which is capable of carrying a flow of a cooling fluid, for cooling the switch, the cooling device having at least one cooling face, and four connection devices for the cooling fluid. The connection devices are arranged in pairs on main sides of the power semiconductor module. The power semiconductor modules have their main sides strung together modularly by connecting corresponding connection devices on successive power semiconductor modules. To this end, at least two successive power semiconductor modules have a capacitor arranged between them which, for its part, is cooled by means of the cooling circulation of the cooling fluid as provided by the arrangement.

Abstract: A power electronic system with a cooling device, and a method for producing the system, comprising a plurality of submodules, each submodule having a first planar insulating material body, one first conductor track cohesively connected thereto, one power switch arranged on the conductor track, at least one internal connecting device composed of an alternate layer sequence of at least one electrically conductive film and at least one electrically insulating film, wherein at least one electrically conductive layer forms at least one second conductor track, and comprising external connection elements. In this case, the submodules are arranged cohesively or in a force-locking manner and in a manner spaced apart from one another with their first main surface on the cooling device. At least one second conductor track at least partially covers first conductor tracks of two submodules, electrically connects them to one another and covers an interspace between the submodules.

Abstract: A power semiconductor device comprising a power semiconductor module and a heat sink and a method for its manufacture. The heat sink has a first cooling housing component, with a cutout passing therethrough, and a second cooling housing component, with a cooling plate arranged in the cutout. The first and second cooling housing components are configured and arranged relative to one another so that a cavity is formed at the side of the cooling plate facing away from the power semiconductor components. The cooling plate is connected to the first cooling housing component by a first weld seam which extends circumferentially therearound. The first weld seam seals the cooling plate in relation to the first cooling housing component, and the second cooling housing component is connected to the first cooling housing component. The inventive power semiconductor device has good heat conduction from the power semiconductor components to a heat sink.

Abstract: A DC/DC converter circuit having feedback capability with a first converter device whose two inputs form the inputs of the DC/DC converter circuit and can be connected to a DC voltage source. The DC/DC converter circuit has a DC voltage-coupled second converter device whose outputs form the outputs of the DC/DC converter circuit and can be connected to a DC voltage sink, wherein the second converter device is in the form of a DC/DC converter cell or of a DC/DC converter cell arrangement having two DC/DC converter cells.

Abstract: A circuit having a plurality of parallel-connected partial circuits for feeding an inverter circuit. A partial circuit comprises an unregulated voltage source with a temporally variable output DC voltage and a synchronous converter having an automatically functioning regulating circuit. The circuit is triggered according to two modes of operation. The first mode of operation is as an upward converter, when the value of the output voltage of the unregulated voltage source exceeds a threshold value, and thus the inverter circuit is supplied with the requisite input voltage. The second mode of operation is as a downward converter, when the value of an output voltage of the unregulated voltage source is below a threshold value, or when there is no output voltage from the unregulated voltage source, in which case a first capacitor is charged from the DC voltage applied to the second terminals.

Abstract: A method for determining the temperature of a power semiconductor, wherein a first control contact is connected to a first pole of a series resistor integrated in the power semiconductor. A second pole—which continues to the power semiconductor—of the series resistor is connected to a second control contact. A first control contact and a second control contact are connected to a first connection terminal and second connection terminal via respective bonding wires. The resistance value of the series resistor is determined by an electrical measurement between the two connection terminals. On the basis of the resistance value and a temperature-resistance characteristic curve of the series resistor, the temperature of the power semiconductor is determined based on the temperature of the series resistor.

Abstract: A switching device having a substrate, a power semiconductor component, a connecting device, load connection devices and a pressure device. Substrate has electrically insulated conductor tracks. A power semiconductor component is arranged on a conductor track. Connecting device is formed as a film composite having an electrically conductive film and an electrically insulating film, and has first and second main surfaces. Switching device is connected in an internally circuit-conforming manner by connecting device. The pressure device has a pressure body with a first recess, a pressure element being arranged so that it projects out of the recess, wherein the pressure element presses onto a section of the second main surface of film composite and, in this case, the section is arranged within the surface of the power semiconductor component in projection along the normal direction of the power semiconductor component.

Abstract: A power semiconductor module having a housing with first connecting devices for arrangement on an external cooling component, at least one substrate carrier with power-electronics circuit arrangements constructed thereon and electrical terminal elements extending therefrom to second connecting devices for connection to external power lines, wherein the first and/or the second connecting devices are constructed as essentially hollow cylindrical metallic molded die-cast parts which are connected to the housing by injection molding.

Abstract: A power semiconductor module, and method for its manufacture, comprising a first housing part having a cutout and a DC voltage load connection apparatus forming a structural unit, wherein the DC voltage load connection apparatus has first and second DC voltage load connection elements. The first DC voltage load connection element has a first leadthrough section arranged in the cutout, and the second DC voltage load connection element has a second leadthrough section arranged in the cutout forming a gap therebetween. The first and second leadthrough sections are sheathed by an elastomer, which fills the gap, is cohesively connected to the first and second leadthrough sections and seals off the first and second leadthrough sections with respect to the first housing part. The inventive power semiconductor module exhibits a high resistance to thermal cycling, and the distance between the DC voltage load connection elements can be configured to be small.

Abstract: A circuit, having a plurality of regulated, parallel, voltage sources, an a.c.-d.c. converter circuit and a regulating unit, and a method for controlling it. The regulated voltage sources include an unregulated voltage source of a temporally variable output d.c. voltage, a step-up converter and an associated regulating device, where the step-up converter is a three-point step-up converter. The regulating unit measures the intermediate circuit voltage of the a.c.-d.c. converter circuit and is connected with the regulating devices. In the method for control, the regulating unit determines the voltage in the intermediate circuit of the a.c.-d.c. converter circuit and from this determines, as a function of the maximally and minimally permissible intermediate circuit voltage, a set-point value for the output voltage of the regulated voltage sources. This set-point value is transmitted to the regulating devices, from which the regulating devices determine the control conditions for the step-up converter.

Abstract: A power component device includes a heat sink having a recess with a base surface and a first side surface. The first side surface of the recess is at a generally acute angle relative to the base surface. The power component device includes a first passive electrical component with a support element, having a first side surface which faces the first side surface of the recess, and is at generally the same angle relative to the base surface as the first side surface of the recess is relative to the base surface. A pressure transmission element has a first side surface which is averted from the first side surface of the support element. The base surface is at a generally acute angle relative to the first pressure transmission element side surface. A pressure generating apparatus presses the support element against the first side surface of the recess.