Abstract: A power semiconductor substrate comprising an insulating planar base, at least one conductor track and at least one contact area as part of the conductor track, wherein a layer of a metallic material is disposed on the contact area by means of pressure sintering. The associated method comprises the steps of: producing a power semiconductor substrate that includes a planar insulating base, conductor tracks and contact areas; arranging a pasty layer, composed of a metallic material and a solvent, on at least one contact area of the power semiconductor substrate; and applying pressure to the pasty layer.

Abstract: A power electronics module having a base plate, a circuit carrier arranged on the base plate and a plurality of conductor tracks which are electrically insulated from the base plate. A power semiconductor component is arranged on one of the conductor tracks, and has a load connection element. In this case, the base plate has a substantially continuous first recess and the circuit carrier has a substantially continuous second recess, wherein the first and second recesses are arranged such that they are in alignment with one another. The load connection element has a first contact device which is in electrically conductive contact with a contact area of that side of the conductor track which is averted from the base plate, a second contact device for externally making contact with the circuit carrier, and a connecting section, which extends through the first and second recesses, between the first and second contact devices.

Abstract: A power semiconductor device has a metal moulded body forming a first connecting conductor, with a first main surface of the metal moulded body there is a first recess having a first base in which a first power semiconductor component is arranged which faces the first base and is connected in an electrically conductive manner. From a second main surface of the metal moulded body, a second recess has a second base and a second power semiconductor component is arranged with the first contact surface thereof associated with the second base connected in an electrically conductive manner to this base. An insulating material layer is on both main surfaces, filling and completely covering the recess, wherein the first insulating layer has an electrically conductive first via which connects a second contact surface of the first power semiconductor component in an electrically conductive manner to a first conducting surface arranged on the first insulating layer.

Abstract: A connecting arrangement for a three-level converter arrangement includes a first to third connection rail which are each in the form of a shaped metal body. The respective connection rail has a line section and a connection section which has a connection means. The respective connecting rail has a line section and a connecting section which, for its part, has an associated respective connecting means. The respective connection means forms, with the connecting means, a force-fitting, electrically conductive connection. The connection rails are connected to the connecting rails with the correct polarity.

Abstract: A power electronic switching device having plurality of potential surfaces. At least two different potentials are respectively assigned to at least one of the potential surfaces. A plurality of semiconductor components are arranged in an n×m matrix, oriented in the x-y-direction, on a first conductor track, formed by at least one potential surface of the first potential. The semiconductor components are connected in parallel with one another and form a current valve. In this case, the semiconductor components can be distributed among a plurality of potential surfaces of the first potential which form the first conductor track.

Abstract: A pressing ram having an elastic cushion element and intended for the material-bonded press-sintering connection of a first connection partner to a second connection partner of a power-electronics component. The elastic cushion element of the pressing ram is enclosed by a dimensionally stable frame, within which the cushion element and a guide part of the pressing ram are guided for linear movement such that the dimensionally stable frame lowers onto the first connection partner, or a workpiece carrier with the first connection partner arranged therein, and, following abutment against the same, the pressing ram together with the elastic cushion element is lowered onto the second connection partner and the elastic cushion exerts a pressure necessary for connecting the first connection partner to the second connection partner.

Abstract: An arrangement comprising a power semiconductor module, a capacitor, a DC-voltage busbar and a connection device. The module has two flat DC-voltage connection conductors each having a contact section. The DC-voltage connection conductors are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction. The capacitor has two flat capacitor connection conductors each having a contact section. The DC-voltage busbar has two partial busbars each having a contact section. The connection device has a yoke with a die and a bearing. The respective contact sections of the DC-voltage connection conductors are clamped flat above one another between the die and the bearing. The contact sections, of the capacitor or the DC-voltage busbar, are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction, and are thus force-fittingly and electrically conductively connected to one another.

Abstract: An arrangement having a DC-voltage busbar and a power component. The power component has two flat DC-voltage connection conductors, each with a contact section and arranged closely adjacent to one another. Each connection conductor has a clamping section beside the respective contact section in the direction of current flow. The busbar has two partial busbars, each with a contact section and arranged closely adjacent to one another. Each partial busbar has a clamping section beside the respective contact section in the direction of current flow. The contact section of at least one connection conductor is electrically connected to the contact section of the associated partial busbar by connecting the clamping sections of the connection conductor to the clamping section of the partial busbars in a flat and force-fitting manner above one another and the respective contact sections therefore lying directly flat on one another.

Abstract: A power semiconductor module and an arrangement including it. The module includes a housing, a switching device having a substrate connected to the housing, a connecting device, load connection devices and a pressure device movable relative to the housing. The substrate has a first central passage and conductor tracks which are electrically insulated from one another. A power semiconductor component sits on a conductor track. The connecting device has two main surfaces and an electrically conductive film. The pressure device has a pressure body with a second passage, in alignment with the first passage and a first recess. A pressure element projects out of the recess, and presses onto a section of the second main surface. This section is within the surface of the component projects normal to the substrate. The first and second passages receive a fastener which force-fittingly fastens the module to the cooling device.

Abstract: A method for producing a power-electronics switching device and a power electronic switching device produced thereby. In the power-electronics switching device, a power semiconductor component is arranged on a first region of a conductor track of a substrate. An insulating film comprising a cutout is then provided, wherein an overlap region of the insulating film, which overlap region is adjacent to the cutout, is designed to cover an edge region of the power semiconductor component. This is followed by arranging the insulating film on the substrate, with the power semiconductor component arranged on it, in such a way that the power semiconductor component is covered on all sides of its edge region by the covering region of the insulating film, wherein a further section of the insulating film covers parts of one of the conductor tracks. Finally, the connecting device is arranged.

Abstract: A power semiconductor module comprising internal load and auxiliary connection devices embodied as wire bonding connections. A substrate has a plurality of load and auxiliary potential areas, wherein a power switch is arranged on a first load potential area, said power switch being embodied as a plurality of controllable power subswitches arranged in series. The power subswitches have a load bonding connection consisting of a plurality of load bonding wires to a second load potential area, wherein a first bonding base is arranged on the second load potential area and an adjacent second bonding base of the respective load bonding wire is arranged on a contact area of the power subswitch.

Abstract: A submodule comprising: a substrate, a power semiconductor component, a connection device, a terminal device and an insulating body. The substrate has conductor tracks electrically insulated from one another, and the component is electrically conductively connected to a track. The connection device is a film composite with a first surface facing the component and the substrate and an opposed second surface. The insulating body has: a first partial body, connected to an edge of the substrate, a first cutout for a terminal, a second partial body, embodied as a pressure body and a second cutout, with a pressure element projecting therefrom. The second partial body is movable relative to the first partial body in the direction of the substrate to press with the pressure element onto a section of the second surface. The section is within the area of the component in projection along the direction of the normal thereto.

Abstract: A power electronic subassembly having a housing and a capacitor arranged therein. The housing has an internally arranged cooling area, which is cooled by a cooling device integrated in the housing or an external cooling device. The capacitor has a contact device of a first polarity and a contact device of a second polarity and a capacitor busbar system. This capacitor busbar system comprises first and second sheet-like shaped metal bodies. The first metal body with the first contact device of the first polarity and the second metal body with the second contact device of the second polarity are electrically conductively connected. A first portion of the first metal body has a first subportion, which is arranged parallel to and at a distance from the cooling area, and a second subportion, which is in thermal contact with the cooling area, wherein the two subportions are connected by an intermediate portion.

Abstract: An arrangement having a DC-voltage busbar and a power component. The power component has two flat DC-voltage connection conductors, each with a contact section and arranged closely adjacent to one another. Each connection conductor has a clamping section beside the respective contact section in the direction of current flow. The busbar has two partial busbars, each with a contact section and arranged closely adjacent to one another. Each partial busbar has a clamping section beside the respective contact section in the direction of current flow. The contact section of at least one connection conductor is electrically connected to the contact section of the associated partial busbar by connecting the clamping sections of the connection conductor to the clamping section of the partial busbars in a flat and force-fitting manner above one another and the respective contact sections therefore lying directly flat on one another.

Abstract: A power electronics module having a base plate, a circuit carrier arranged on the base plate and a plurality of conductor tracks which are electrically insulated from the base plate. A power semiconductor component is arranged on one of the conductor tracks, and has a load connection element. In this case, the base plate has a substantially continuous first recess and the circuit carrier has a substantially continuous second recess, wherein the first and second recesses are arranged such that they are in alignment with one another. The load connection element has a first contact device which is in electrically conductive contact with a contact area of that side of the conductor track which is averted from the base plate, a second contact device for externally making contact with the circuit carrier, and a connecting section, which extends through the first and second recesses, between the first and second contact devices.

Abstract: A power semiconductor circuit comprising a field effect transistor having a drain, a source and a gate as terminals, and further comprising a control device having a drive device and an undervoltage detection circuit. The drive device drives the field effect transistor and is electrically connected to the gate of the field effect transistor. The undervoltage detection circuit generates an undervoltage detection signal if a power semiconductor voltage present between the drain and the source of the field effect transistor falls below a specific voltage value. The drive device switches on the field effect transistor when a switch-on command for switching on the field effect transistor and the undervoltage detection signal are present. The invention provides a power semiconductor circuit with low energy loss.

Abstract: A switching device having a substrate, a power semiconductor component, a connecting device, load connection devices and a pressure device. Substrate has electrically insulated conductor tracks. A power semiconductor component is arranged on a conductor track. Connecting device is formed as a film composite having an electrically conductive film and an electrically insulating film, and has first and second main surfaces. Switching device is connected in an internally circuit-conforming manner by connecting device. The pressure device has a pressure body with a first recess, a pressure element being arranged so that it projects out of the recess, wherein the pressure element presses onto a section of the second main surface of film composite and, in this case, the section is arranged within the surface of the power semiconductor component in projection along the normal direction of the power semiconductor component.

Abstract: A power component device includes a heat sink having a recess with a base surface and a first side surface. The first side surface of the recess is at a generally acute angle relative to the base surface. The power component device includes a first passive electrical component with a support element, having a first side surface which faces the first side surface of the recess, and is at generally the same angle relative to the base surface as the first side surface of the recess is relative to the base surface. A pressure transmission element has a first side surface which is averted from the first side surface of the support element. The base surface is at a generally acute angle relative to the first pressure transmission element side surface. A pressure generating apparatus presses the support element against the first side surface of the recess.

Abstract: A power semiconductor device comprising a power semiconductor module and a heat sink; and a method for its manufacture. The module has a cooling plate, with an opening delimited by a lateral first surface thereof extending circumferentially around the opening. The cooling plate is arranged in the opening and has a lateral first surface which extends circumferentially around the cooling plate. The two first surfaces are at a respective angle of less than 90° with respect to a main surface of the cooling plate facing the power semiconductor components. The two first surfaces are pressed together, extending circumferentially along the first surface of the cooling plate and extending circumferentially along the first surface of the heat sink. The inventive power semiconductor device has good heat conduction from the power semiconductor components to the heat sink through which a liquid can flow, and which is reliably leaktight over the long term.

Abstract: A Schottky diode and a method for making one. The method includes the following steps: providing a semiconductor base body, preferably in the form of a wafer, having a high dopant concentration and having a first main surface, which forms the first electrical contact surface of the Schottky diode; epitaxially depositing a semiconductor layer having the same conductivity and a lower dopant concentration on that surface of the semiconductor base body which lies opposite the first main surface; arranging a first metal layer on the semiconductor layer with the formation of a Schottky contact between the first metal layer and the semiconductor layer; connecting a planar contact body to the first metal layer by means of a connecting means; forming at least one individual Schottky diode; and arranging a passivation layer in the edge region of the at least one Schottky diode.