Abstract: A semiconductor structure for use in fabricating a semiconductor device having improved light propagation is provided. The structure includes at least one layer transparent to radiation having a target wavelength relevant to operation of the semiconductor device. During operation of the semiconductor device, radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side. At least one of the first side or the second side comprises a profiled surface. The profiled surface includes a plurality of vacancies fabricated in the material of the layer. Each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength.

Abstract: An ultraviolet illuminator for providing a cleaning treatment to a medical device is disclosed. The ultraviolet illuminator can include an ultraviolet cleaning treatment system that operates in conjunction with at least one ultraviolet radiation source and sensor to clean surfaces of a medical device for purposes of disinfection, sterilization, and/or sanitization. The ultraviolet illuminator is suitable for a wide variety of medical devices, instruments and equipment. Stethoscopes and medical instrument probes are illustrative examples of some devices that can be used with the ultraviolet illuminator.

Abstract: A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. At least one of the plurality of surfaces can be configured to diffusively reflect at least 70% of the ultraviolet radiation and at least one of the plurality of surfaces can be configured to transmit at least 30% of the ultraviolet radiation and reflect at least 10% of the ultraviolet radiation.

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

Abstract: A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor structure. A filler material can penetrate at least some of the plurality of pores and directly contact the surface of the semiconductor structure. In an illustrative embodiment, multiple types of filler material at least partially fill the pores of the aluminum oxide layer.

Abstract: A thermal management structure for a device is provided. The thermal management structure includes electroplated metal, which connects multiple contact regions for a first contact of a first type located on a first side of the device. The electroplated metal can form a bridge structure over a contact region for a second contact of a second type without contacting the second contact. The thermal management structure also can include a layer of insulating material located on the contact region of the second type, below the bridge structure.

Abstract: A solution for treating a fluid, such as water, is provided. The solution determines an ultraviolet transparency of a fluid before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates.

Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.

Abstract: A solution for illuminating an area and/or treating a substance with light, such as ultraviolet radiation, is described. The solution can use one or more solid state ultraviolet sources in conjunction with one or more ultraviolet lamps to illuminate a treatment region with ultraviolet radiation. A control component can individually operate the solid state ultraviolet source(s) and the ultraviolet lamp(s) to illuminate the treatment region with ultraviolet radiation having a predetermined minimum ultraviolet intensity.

Abstract: A solution for irradiating a flowing fluid through a channel with ultraviolet radiation is provided. Ultraviolet radiation sources can be located within the channel in order to direct ultraviolet radiation towards the flowing fluid and/or the interior of the channel. A valve can be located adjacent to the channel to control the flow rate of the fluid. A control system can control and adjust the ultraviolet radiation based on the flow rate of the fluid and a user input component can receive a user input for the control system to adjust the ultraviolet radiation. The ultraviolet radiation sources, the control system, the user input component, and any other components that require electricity can receive power from a rechargeable power supply. An electrical generator located within the channel can convert energy from the fluid flowing through the channel into electricity for charging the rechargeable power supply.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

Abstract: Ultraviolet irradiation of food handling instruments for purposes of sterilization, disinfection, cleaning and other treatment capabilities. A housing having receptacles receives one or more food handling instruments. Ultraviolet light emitting sources located about the receptacles can direct ultraviolet light towards the receptacles and any food handling instruments placed therein. One or more sensors located about the receptacles can detect operational conditions associated with the receptacles and any food handling instruments received therein. A control unit, operatively coupled to the ultraviolet light emitting sources and the one or more sensors, manages the irradiation of the receptacles and any food handling instruments in the receptacles as a function of the operational conditions detected by the one or more sensors.

Abstract: A solution for packaging an optoelectronic device by aligning an optical element with respect to the package is provided. After initial placement of the optical element on the device package, an emitted light pattern can be measured and compared to a target light pattern. Subsequently, the position of the optical element can be adjusted. The emitted light pattern can be repeatedly compared to the target light pattern until the emitted light pattern is within an acceptable range of error and the optical element can be secured to the device package.

Abstract: A system capable of detecting and/or sterilizing surface(s) of an object using ultraviolet radiation is provided. The system can include a disinfection chamber and/or handheld ultraviolet unit, which includes ultraviolet sources for inducing fluorescence in a contaminant and/or sterilizing a surface of an object. The object can comprise a protective suit, which is worn by a user and also can include ultraviolet sources for disinfecting air prior to the air entering the protective suit. The system can be implemented as a multi-tiered system for protecting the user and others from exposure to the contaminant and sterilizing the protective suit after exposure to an environment including the contaminant.

Abstract: A semiconductor heterostructure including a polarization doped region is described. The region can correspond to an active region of a device, such as an optoelectronic device. The region includes an n-type semiconductor side and a p-type semiconductor side and can include one or more quantum wells located there between. The n-type and/or p-type semiconductor side can be formed of a group III nitride including aluminum and indium, where a first molar fraction of aluminum nitride and a first molar fraction of indium nitride increase (for the n-type side) or decrease (for the p-type side) along a growth direction to create the n- and/or p-polarizations.

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

Abstract: A growth layer having a growth surface with protruding domains is described. The protruding domains can be separated by a substantially flat growth surface located between the protruding domains. A protruding domain can include an internal region that can be filled with a gas and/or can be partially or completely filled with one or more materials that differ from the material of the growth layer, which forms an outer surface of each of the protruding domains.

Abstract: Ultraviolet irradiation of liquids for purposes of sterilization, disinfection, cleaning and/or treatment. A liquid collection reservoir can receive an inflow of a liquid. A filtering unit can filter the inflow of liquid received by the liquid collection reservoir. A liquid chamber stores the liquid. Ultraviolet light emitting sources located about the liquid chamber irradiate the liquid in the liquid chamber with ultraviolet light. A control unit, operatively coupled to the ultraviolet light emitting sources, controls the irradiation of the liquid in the liquid chamber with the ultraviolet light emitting sources. The control unit is configured to control an intensity and a duration of the irradiation as a function of time that the liquid is stored in the liquid chamber and the amount of the liquid that is in the liquid chamber.

Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.