Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

Abstract: A liquid level sensor includes a rod having a first portion and a second portion, and a wave generation unit affixed to one end of the rod. The wave generation unit generates a wave group that propagates in at least a shear order and a flexural order, and the frequency of the shear wave is based on the diameter of the rod.

Abstract: An apparatus for determining the total amount of two or more substances in a liquid, at least one of said substances comprising a fluorescent substance, said apparatus comprising: a mass spectrometer device; a fluorometer device; and a processing means; wherein said mass spectrometer device is adapted to obtain a periodic measurement of the total amount of said two or more substances in the liquid, said fluorometer device being adapted to detect the fluorescent response of said at least one fluorescent substance in said liquid to an excitation signal, said processing means being programmed to determine a calibration factor by comparing a measurement obtained by the fluorometer device with said periodic measurement of the total amount of said two or more substances present obtained by the mass spectrometer device, the processing means subsequently using said calibration factor to determine measurements representative of the total amount of both fluorescent and non-fluorescent substances present in the liquid b

Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).

Abstract: A multi-static radar system for monitoring water surface targets is provided. The multi-static radar system may include a first and second radar, a state machine, and a signal processor. The radars may be located in separate locations and synchronized using timing signals. The state machine may be configured to determine, using the timing signals, start times and end times of radio frequency signal modulations for each radar. A concept of negative pseudo-range is provided, whereby the modulation start times are configured to allow pseudo-negative time delays at as many as half of the radar receivers, thereby doubling the multi-static echo detections. The signal processor may be configured to simultaneously receive and process the echoes of the radar signals received at the radars to determine position and velocity vectors for the monitored water surface targets.

Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film. The conducting elements can be configured to split a high electric field spike otherwise present in the high-voltage surface region during operation of the device into multiple much smaller spikes.

Abstract: A substantially planar eddy-current sensor having durability enhancing pillars in an active region is provided. The pillars are distributed and sized so as to have limited effect on the sensor's performance. When the sensor is mounted on a component such that the sensor experiences forces on a top and bottom surface, the pillars bear the load reducing the load bore by the active elements (e.g., drive winding, sense elements). A sensor with redundant drive windings and/or redundant sense elements is disclosed. The redundant elements may be connected to separate electronics. Another aspect relates to providing a reference transformer for calibration of a sensor. The secondary windings of the reference transformer are connected in series with the sense elements of the sensor to be calibrated. Transimpedance measurements are made when the drive winding of the reference transformer is excited. The measurements are used to correct transimpedance measurements made when the drive winding of the sensor is excited.

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

Abstract: A method using Infrared Imaging Polarimetry for detecting the presence of foreign fluids on water comprises estimating an expected polarization response for a foreign fluid desired to be detected. Oil from an oil spill is one such foreign fluid. An optimal position of a polarimeter to take images of the water's surface is determined from the expected polarization response. The polarimeter is positioned at the optimal position and records raw image data of the water's surface to obtain polarized images of the area. The polarized images are corrected, and IR and polarization data products are computed. The IR and polarization data products are converted to multi-dimensional data set to form multi-dimensional imagery. Contrast algorithms are applied to the multi-dimensional imagery to form enhanced contrast images, from which foreign fluids can be automatically detected.

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.

Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.

Abstract: An electrical amplifier unit which removably attaches to a gas mask and includes a microphone for detecting voice sounds emitted by the wearer of the gas mask, circuitry for amplifying the detecting sound, and a loudspeaker for emitting the amplified sounds externally of the mask. The associated components are contained within a housing that attaches sealably to the outlet port of a gas mask. The amplifier unit is quickly and easily attachable to commercially available gas masks without additional hardware and does not affect the structural and functional integrity of the host mask.

Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

Abstract: Two forms of load bearing or transmitting structures are disclosed wherein each uses magnetism to hold a key in one of two bodies to prevent movement therebetween. One embodiment is a clevis, wherein the clevis pin is instrumented as a load cell and a magnetic key resides in a slot in a portion of the clevis pin which protrudes outside of one of the clevis legs. In another embodiment, torque is transmitted between a shaft and a coupling by means of keys that are held in keyways by magnetism thereby to provide a torque coupling between the shaft and coupling members.

Abstract: A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.

Abstract: The notch-antenna array includes at least one notch-antenna array element that includes a first notch-antenna radiator, and a second notch-antenna radiator disposed at an angle to said first notch-antenna radiator. The angle is preferably 90 degrees and the element is either a slant antenna or an orthogonal antenna. The first notch-antenna radiator and the second notch-antenna radiator are formed integrally with one another. Each of the first and second notch-antenna radiators has substantially planar opposing surfaces and a flared notch formed therein. Each of the first and second notch-antenna radiators have substantially planar opposing surfaces and a slot configured to receive a printed circuit board therein formed between the substantially planar opposing surfaces. The printed circuit board includes a substrate with one or more dielectric layers, and a feedline.

Abstract: An emitting structure for simulating an irradiance signature of a missile is provided. The emitting structure includes one or more radiation sources, each of which includes at least one ultraviolet radiation source and at least one infrared radiation source. The emitting structure also includes a spherical shell and a mechanism for positioning the radiation source(s) along a three dimensional boundary of the spherical shell. The emitting structure can locate and operate one of the radiation sources to simulate the irradiance signature of the missile.

Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

Abstract: In a decoding method, photoelectric conversion is performed on light reflected by a code image, a read signal indicating intensity of the reflected light is produced, and the produced read signal is differentiated to produce a derivative signal. The inflection points of intensity of the reflected light in the read signal are detected from the derivative signal and peak levels, each of which is an extreme value of the intensity of the reflected light, the peak level corresponding to a width between the detected inflection points, are detected. A difference between the detected peak levels is then obtained and threshold values for decoding the read signal are set from the obtained difference. This enables the read signal to be decoded even when the code image is spotted with a stain or its printing quality is inferior or even when the read signal is read in its defocus state.

Abstract: An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.