Abstract: Provided is a light emitting diode (LED) illumination module. The LED illumination module includes a fluorescent substance plate mounted to be capable of being attached to and detached from an opening formed in a top surface of a heat sink. Also, the LED illumination module includes a lens that covers the opening of the heat sink and is mounted to be capable of being attached to and detached from the heat sink.

Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.

Abstract: Disclosed is an apparatus for forming an encapsulation material for a light emitting device. The apparatus for forming an encapsulation material comprises: an upper mold on which is mounted a substrate having a plurality of optical semiconductors; a lower mold arranged opposite the upper mold; a resin-capture space for capturing a resin between the upper mold and the lower mold; and an ejector pin for dividing the resin-capture space into a plurality of spaces at the position where the encapsulating material is formed, thereby dividing the encapsulation material into a plurality of parts formed on the substrate.

Abstract: A light emitting module is disclosed. The light emitting module comprises a wafer having first and second surfaces; a light emitting diode chip disposed on the first surface of the wafer; a power supply device for supplying power to the light emitting diode chip; and a photoelectric conversion device for converting sunlight into electricity and providing it to the power supply device, wherein the power supply device is disposed on the second surface of the wafer.

Abstract: Disclosed is a light emitting diode assembly. The light emitting diode assembly comprised: a red light emitting diode chip; a short-wavelength light emitting diode chip emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member for dispersing most of the heat generated in the short wavelength light emitting diode chip; and a second heat-dispersion member for dispersing most of the heat generated in the red light emitting diode chip. Further, the second heat-dispersion member has heat dispersion performance relatively superior to that of the first heat dispersion member. Thus, spectrum movement in the red light emitted from the red light emitting diode chip may be prevented so as to prevent a color-coordinate transformation during the operation time of same.

Abstract: A surface-modified silicate luminophore includes a silicate luminophore and a coating includes at least one of (a) a fluorinated coating including a fluorinated inorganic agent, a fluorinated organic agent, or a combination of fluorinated inorganic and organic agents, the fluorinated coating generating hydrophobic surface sites and (b) a combination of the fluorinated coating and at least one moisture barrier layer. The moisture barrier layer includes MgO, Al2O3, Y2O3, La2O3, Gd2O3, Lu2O3, and SiO2 or the corresponding precursors, and the coating is disposed on the surface of the silicate luminophore.

Abstract: Disclosed is a lighting apparatus that can be provided in a warehouse and driven by using an industrial power source and has superior light efficiency and long life span. The disclosed lighting apparatus is provided in a warehouse and driven by an industrial power source, and comprises a main body having a plurality of concave portions and a plurality of convex portions; and a plurality of light emitting modules disposed in the concave portions of the main body, thereby having low power consumption and long life span.

Abstract: A method of manufacturing a p type nitride semiconductor layer doped with carbon in a highly reproducible manner with an increased productivity is provided. The method includes supplying an III-group material gas for a predetermined time period T1, supplying a V-group material gas containing a carbon source for a predetermined time period T2 when a predetermined time period t1 (t1+T2>T1) elapses after the supply of the III-group material gas begins, repeating the step of supplying the III-group material gas and the step of supplying the V-group material gas when a predetermined time period t2 (t1+T2?t2>T1) elapses after the supply of the V-group material gas begins, and thus forming an AlxGa1-xN semiconductor layer (0<x?1) at a growth temperature of 1190° C.˜1370° C. or a growth temperature at which a substrate temperature is 1070° C.˜1250° C. using a chemical vapor deposition method or a vacuum evaporation method. Nitrogen sites within the semiconductor layer are doped with carbon.

Abstract: A light emitting device having a plurality of light emitting cells is disclosed.

Abstract: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.

Abstract: The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

Abstract: A backlight driving apparatus that drives a backlight unit having a plurality of LEDs is provided, which includes a rectifying unit rectifying an AC voltage and generating a driving voltage for the plurality of LEDs, a plurality of connection changing units changing connection relations between the plurality of LEDs depending on a level of the driving voltage, and a light output compensation unit generating a compensation voltage using the driving voltage and selectively supplying the compensation voltage to the plurality of LEDs.

Abstract: Disclosed is a light source module capable of realizing a slim structure and providing excellent luminous efficiency. The light source module includes a circuit board, a light emitting diode chip mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a wavelength conversion layer disposed on the light emitting diode chip, and a reflector covering an upper surface and at least one of side surfaces of the light emitting diode chip.

Abstract: An indirect lighting apparatus includes a light-emitting device, a reflector disposed above the light-emitting device, and a wavelength conversion layer disposed on a surface of the reflector facing the light-emitting device and spaced apart from the light-emitting device. The wavelength conversion layer includes phosphors configured to change the wavelength of light emitted from the light-emitting device. The reflector is configured to reflect light emitted from the wavelength conversion layer, back towards the wavelength conversion layer.

Abstract: A light emitting device is disclosed. The light emitting device may include a light emitting diode (LED) for emitting light and phosphor adjacent to the LED. The phosphor may be excitable by light emitted by the LED and may include a first compound having a host lattice comprising first ions and oxygen. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and first compound may have an Olivin crystal structure, a ?-K2SO4 crystal structure, a trigonal Glaserite (K3Na(SO4)2) or monoclinic Merwinite crystal structure, a tetragonal Ackermanite crystal structure, a tetragonal crystal structure or an orthorhombic crystal structure. In another embodiment, the copper ions do not act as luminescent ions upon excitation with the light emitted by the LED.

Abstract: The disclosure relates to an AC LED dimmer and dimming method thereof. The AC LED dimmer includes a rectifier receiving AC voltage from an AC voltage source and full-wave rectifying the AC voltage; a direct current (DC)/DC converter receiving the full-wave rectified voltage from the rectifier, generating a full-wave rectified stepped-up voltage, and generating a pulse enable signal; a pulse width modulation controller receiving the full-wave rectified stepped-up voltage and generating a pulse width modulation signal to dim an AC LED in response to the pulse enable signal; a switch driving the AC LED under control of the pulse width modulation signal, and an electromagnetic interference (EMI) filter to be connected between the AC voltage source and the switch to eliminate electromagnetic interference from the AC voltage source. Accordingly, the dimmer can perform an efficient and linear dimming function and suppress harmonics.

Abstract: A normally off nitride-based transistor may include a source electrode and a drain electrode, a channel layer serving as a charge transfer path between the source electrode and the drain electrode, and a gate electrode that controls charge transfer of the channel layer. The channel layer may have a junction structure of a first conductive nitride semiconductor layer and an intrinsic nitride semiconductor layer such that a fixed turn-off blocking electric field is generated in the channel layer between the source electrode and the drain electrode in a turn-off state. The intrinsic nitride semiconductor layer may include an intrinsic GaN semiconductor layer, and the first conductive nitride semiconductor layer may include a p type GaN semiconductor layer stacked over the intrinsic GaN semiconductor layer.

Abstract: A luminescent material is disclosed. The luminescent material may include a first compound having a host lattice comprising first ions and oxygen. A first portion of the first ions may be substituted by copper ions. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and the first compound may have an Olivine crystal structure, ?-K2SO4 crystal structure, a trigonal Glaserite (K3Na(SO4)2) or monoclinic Merwinite crystal structure, a tetragonal Ackermanite crystal structure, a tetragonal crystal structure or an orthorhombic crystal structure. In another embodiment, the copper ions do not act as luminescent ions upon excitation with the ultraviolet or visible light.

Abstract: A light emitting diode package having heat dissipating slugs is provided. The light emitting diode package comprises first and second heat dissipating slugs formed of a conductive material and spaced apart from each other; a package main body coupled to the first and second heat dissipating slugs to support the first and second heat dissipating slugs; and a light emitting diode die electrically connected to the first and second heat dissipating slugs, wherein the respective first and second heat dissipating slugs are exposed to the outside through lower and side surfaces of the package main body. As such, the first and second heat dissipating slugs can be used as external leads.

Abstract: A multi-LED package includes a heat sink including a primary slug and a secondary slug separated from each other, a primary LED chip mounted on the primary slug, one or more secondary LED chips mounted on the secondary slug, a lead frame structure electrically wired to the primary and secondary LED chips, and a phosphor covering at least a part of the primary LED chip. Another multi-LED package includes a heat sink having an upper surface and partitions protruding therefrom, a primary LED chip mounted inside the partitions, one or more secondary LED chips mounted outside the partitions, a lead frame structure electrically wired to the primary and secondary LED chips, and a phosphor covering at least a part of the primary LED chip.