Patents Assigned to Seoul Semiconductor Co., Ltd.
  • Bismuth-doped semi-insulating group III nitride wafer and its production method
    Patent number: 9435051
    Abstract: The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm?2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: September 6, 2016
    Assignees: SixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
    Inventors: Tadao Hashimoto, Edward Letts, Sierra Hoff
  • Composite substrate of gallium nitride and metal oxide
    Patent number: 9431488
    Abstract: The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: August 30, 2016
    Assignees: SixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
    Inventor: Tadao Hashimoto
  • Light emitting apparatus with ambient light sensor
    Patent number: 9433054
    Abstract: Disclosed herein is a light emitting apparatus. The light emitting apparatus includes a first light emitting unit including a first light emitting diode and a first phosphor; a second light emitting unit including a second light emitting diode and a second phosphor; an ambient light sensor, and a controller. The ambient light sensor detects a spectrum distribution of ambient light, and the controller operates the first and second light emitting units with reference to the spectrum distribution of the ambient light detected by the ambient light sensor. A light emitting unit is divided into two or more light emitting units and the ambient light sensor is provided to operate the first and second light emitting units corresponding to the spectrum distribution of ambient light.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: August 30, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Bennike Jesper, Ektay Eminovski
  • Indirect lighting apparatus
    Patent number: 9423084
    Abstract: An indirect lighting apparatus includes a light-emitting device, a reflector disposed above the light-emitting device, and a wavelength conversion layer disposed on a surface of the reflector facing the light-emitting device and spaced apart from the light-emitting device. The wavelength conversion layer includes phosphors configured to change the wavelength of light emitted from the light-emitting device. The reflector is configured to reflect light emitted from the wavelength conversion layer, back towards the wavelength conversion layer.
    Type: Grant
    Filed: November 27, 2012
    Date of Patent: August 23, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Chung Hoon Lee, Hyuck Jung Choi, Eun Ju Kim, Ji Hye Ahn
  • LED driving circuit package
    Patent number: 9426857
    Abstract: An LED driving circuit package includes a rectification unit to receive an AC power voltage and rectify the AC power voltage to generate a ripple voltage, an LED driving switching unit including a plurality of switch units and a plurality of current control units. The LED driving circuit package further includes a low voltage control unit including a circuit power supply unit to generate low voltage power, a voltage detection unit to detect a magnitude of the ripple voltage, a reference frequency generation unit to generate a reference frequency, and a reference pulse generation unit to generate a reference pulse for controlling the operation of the LED driving switch unit according to the reference frequency and a magnitude of the voltage detected by the voltage detection unit.
    Type: Grant
    Filed: January 27, 2012
    Date of Patent: August 23, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Young Do Jong, Hyun Gu Kang, Hye Man Jung, Kang Nyung Lee
  • Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
    Patent number: 9419186
    Abstract: An exemplary embodiment of the present invention discloses a light-emitting diode (LED) chip including a semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first electrode disposed on the semiconductor stacked structure, a wavelength converting layer disposed on the semiconductor stacked structure, and a transparent resin disposed on the wavelength converting layer.
    Type: Grant
    Filed: February 5, 2014
    Date of Patent: August 16, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jung Hwa Jung, Bang Hyun Kim
  • Light emitting diode package having heat dissipating slugs
    Patent number: 9412924
    Abstract: A light emitting diode package having heat dissipating slugs is provided. The light emitting diode package comprises first and second heat dissipating slugs formed of a conductive material and spaced apart from each other; a package main body coupled to the first and second heat dissipating slugs to support the first and second heat dissipating slugs; and a light emitting diode die electrically connected to the first and second heat dissipating slugs, wherein the respective first and second heat dissipating slugs are exposed to the outside through lower and side surfaces of the package main body. As such, the first and second heat dissipating slugs can be used as external leads.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: August 9, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Tae Won Seo, Sang Cheol Lee, Chan Sung Jung
  • Light source module and backlight unit having the same
    Patent number: 9411089
    Abstract: A light source module includes a circuit board, board pads disposed on the circuit board, and a light emitting diode chip disposed on the board pads. The light emitting diode chip includes a substrate and a semiconductor stacking part disposed between the substrate and the circuit board, and the substrate includes an inclined part disposed at an upper portion thereof and a discharging part disposed at one side surface thereof.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: August 9, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Ki Bum Nam, Yu Dae Han, Chung Hoon Lee
  • Slim LED package
    Patent number: 9412913
    Abstract: Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface regions of the first lead frame, an LED chip mounted on a bottom surface of the chip mounting recess and connected with the second lead frame via a bonding wire, and a transparent encapsulation material protecting the LED chip while supporting the first and second lead frames.
    Type: Grant
    Filed: February 17, 2015
    Date of Patent: August 9, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Eun Jung Seo
  • Backlight driving apparatus
    Patent number: 9378701
    Abstract: A backlight driving apparatus that drives a backlight unit having a plurality of LEDs is provided, which includes a rectifying unit rectifying an AC voltage and generating a driving voltage for the plurality of LEDs, a plurality of connection changing units changing connection relations between the plurality of LEDs depending on a level of the driving voltage, and a light output compensation unit generating a compensation voltage using the driving voltage and selectively supplying the compensation voltage to the plurality of LEDs.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: June 28, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Hye Man Jung, Hyun Gu Kang, Oh Seok Kim, Young Eun Yang
  • Panel operating apparatus
    Patent number: 9367182
    Abstract: Disclosed is a panel operating apparatus. The panel operating apparatus changes a state of a display device electrically connected to a circuit board located below a panel. The panel operating apparatus includes a tact member mounted on the circuit board, and a resilient member electrically connected to a circuit pattern of the circuit board and separated from the panel and the circuit board. The resilient member is selectively brought into contact with the panel or the tact member depending on a degree of pressure applied to the panel, thereby allowing the apparatus to be operated in a tact manner when the apparatus cannot be operated in a touch manner due to individual features of operators or external conditions.
    Type: Grant
    Filed: December 30, 2009
    Date of Patent: June 14, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Hee Jeong Ban, Jae-Hyuk Chang, Hyun-Seok Kim
  • LED lamp
    Patent number: 9360165
    Abstract: An exemplary embodiment discloses a light-emitting diode (LED) lamp including a heat sink including a first surface and a second surface, and a substrate including a first surface and a second surface. The substrate disposed on the heat sink and the first surface of the heat sink contacts the second surface of the substrate. The LED lamp also includes at least one first LED disposed on the first surface of the substrate and a transparent cover connected to the heat sink and spaced apart from the substrate. The second surface of the heat sink is adjacent to the first surface of the heat sink. The second surface of the heat sink extends toward the transparent cover. At the least an end point of the second surface of the heat sink is disposed over an outer region of edges of the substrate.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: June 7, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Sung Ho Jin
  • LED driving apparatus and driving method for continuously driving LED
    Patent number: 9357605
    Abstract: Disclosed herein are a light emitting diode (LED) driving apparatus and driving method for continuously driving an LED. According to the present invention, an LED driving apparatus and driving method for continuously driving an LED capable of compensating for a light output of an LED lighting using an energy chargeable and dischargeable element and/or circuit are proposed.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: May 31, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Hye Man Jung, Hyun Gu Kang, Sang Wook Han
  • Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thickness
    Patent number: 9349592
    Abstract: The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm?2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0?x?1, 0?y?1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: May 24, 2016
    Assignees: SixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
    Inventor: Tadao Hashimoto
  • Illumination system having color temperature control and method for controlling the same
    Patent number: 9351355
    Abstract: An illumination system includes a power supply unit; and a light emitting apparatus driven by power supplied from the power supply unit. The light emitting apparatus includes: a first light emitting portion and a second light emitting portion configured to be independently driven to emit output light; and a controller configured to control a color temperature or a luminous flux of the output light by controlling operations of the first and second light emitting portions. The controller is configured to control an output color temperature of the output light according to color temperature control data for controlling an output color temperature of the second light emitting portion or control a luminous flux of the output light according to luminous flux control data for controlling an output luminous flux of the first light emitting portion.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: May 24, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Jae Jo Kim
  • Dimmable AC driven LED illuminating apparatus
    Patent number: 9345094
    Abstract: A dimmable alternating current (AC) driven light emitting diode (LED) illuminating apparatus including a TRIAC dimmer configured to perform a dimming control using a phase control.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: May 17, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Keon Young Lee, Chung Hoon Lee
  • Illumination apparatus including semiconductor light emitting diodes
    Patent number: 9345085
    Abstract: An illumination apparatus of a high efficiency light emitting element and a driving circuit of a light emitting element controlling a series and parallel connection relationship between light emitting groups according to a voltage level of a driving voltage and controlling a sequential driving of the light emitting groups at the same time.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: May 17, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Hye Man Jung
  • Light emitting device and method of fabricating the same
    Patent number: 9320108
    Abstract: Exemplary embodiments of the present invention provide a light emitting device enabling correction of color coordinates into a desired target bin, and a method of fabricating the same. The method includes forming a first resin containing phosphors inside a cavity of a package body on which a light emitting diode chip is mounted, measuring color coordinates of light emitted by combination of the light emitting diode chip and the first resin, and correcting the color coordinates by forming a second resin on the first resin.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: April 19, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Hyuck Jung Choi, Dae Hee Kim
  • Light emitting device and lighting system having the same
    Patent number: 9312246
    Abstract: The present invention provides a light emitting device comprising a first light emitting portion that emits white light at a color temperature of 6000K or more and a second light emitting portion that emits white light at a color temperature of 3000K or less, which include light emitting diode chips and phosphors and are independently driven. The present invention has an advantage in that a light emitting device can be diversely applied in a desired atmosphere and use by realizing white light with different light spectrums and color temperatures. Particularly, the present invention has the effect on health by adjusting the wavelength of light or the color temperature according to the circadian rhythm of humans.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: April 12, 2016
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Gundula Roth, Walter Tews, Chung-Hoon Lee
  • Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
    Patent number: 9305772
    Abstract: The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm?2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0?x?1, 0?y?1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: April 5, 2016
    Assignees: SixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
    Inventor: Tadao Hashimoto