Abstract: A nitride-based transistor includes a semiconductor structure, a gate electrode and a leakage current suppression structure. The semiconductor structure includes a first nitride-based semiconductor layer doped with impurities of a first conductivity type, a second nitride-based semiconductor layer doped with impurities of a second conductivity type, and a third nitride-based semiconductor layer doped with impurities of the first conductivity type. The gate electrode overlaps the second nitride-based semiconductor layer. The leakage current suppression structure is disposed along edges of the semiconductor structure. The leakage current suppression structure includes a depletion layer in at least one of the first and third nitride-based semiconductor layers.

Abstract: The present invention relates to a light-emitting diode package having a plurality of inner leads, a plurality of outer leads extending from the inner leads, a slug electrically connected to at least one of the inner leads, the slug having a thermally conductive material, a light-emitting chip arranged on the slug, and a housing supporting the light-emitting diode package.

Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Abstract: An LED package includes a lead frame, a housing part, and a lead heat dissipating part. The lead frame includes a first lead mounting an LED chip and a second lead spaced apart from the first lead. The housing part covers a portion of the lead frame and includes an opening part for exposing the LED chip, a first side corresponding to a support side contacting the first lead and the second lead, and a second side opposite to the first side. The lead heat dissipating part is extended from the first lead and exposed partially to the first side of the housing part. Herein, the first side of the housing part is thicker than the second side.

Abstract: The present invention provides a light emitting device which comprises blue and red light emitting diode (LED) chips and at least one phosphor for emitting green light by means of light emitted from the blue LED chip, and an LCD backlight including the light emitting device. According to the light emitting device of the present invention, uniform white light can be implemented and both high luminance and wider color reproduction range can also be obtained. Accordingly, an LCD backlight for uniform light distribution on an LCD as well as low power consumption and high durability can be manufactured using the light emitting device.

Abstract: An embodiment of the invention provides a light emitting diode package. The light emitting diode package includes at least three light emitting diode chips; first leads comprising at least three chip mounting sections on which the at least three light emitting diode chips are mounted, respectively; second leads separated from the first leads and connected to the light emitting diode chips via wires, respectively; and a substrate having the first leads and the second leads formed thereon, wherein the at least three chip mounting sections are arranged around a center of the substrate through which an optical axis of the light emitting diode package passes.

Abstract: A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.

Abstract: A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.

Abstract: A normally off nitride-based transistor may include a source electrode and a drain electrode, a channel layer serving as a charge transfer path between the source electrode and the drain electrode, and a gate electrode that controls charge transfer of the channel layer. The channel layer may have a junction structure of a first conductive nitride semiconductor layer and an intrinsic nitride semiconductor layer such that a fixed turn-off blocking electric field is generated in the channel layer between the source electrode and the drain electrode in a turn-off state. The intrinsic nitride semiconductor layer may include an intrinsic GaN semiconductor layer, and the first conductive nitride semiconductor layer may include a p type GaN semiconductor layer stacked over the intrinsic GaN semiconductor layer.

Abstract: Exemplary embodiments of the present invention relate to an illumination lens disposed over a light-emitting diode (LED). The illumination lens includes an internal surface surrounding the LED and configured to intercept light emitted by the LED, wherein the internal surface comprises an arch-shaped non-rotationally symmetric, elongated horizontal cross-section. The illumination lens also includes an external surface comprising a central cusp, the external surface extending laterally with non-axially-symmetrical profiles in different horizontal directions, the non-axially-symmetric profiles being elliptical with respect to a tilted major axis of the illumination lens, wherein the light-emitting device is configured to produce an elongated illumination pattern.

Abstract: A light emitting diode package includes a package body having a cavity, a light emitting diode chip having a plurality of light emitting cells connected in series to one another, a phosphor converting a frequency of light emitted from the light emitting diode chip, and a pair of lead electrodes. The light emitting cells are connected in series between the pair of lead electrodes.

Abstract: The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm?2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.

Abstract: Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals in which one or more zinc oxide crystals have intra-crystalline porosity other than incidental intra-crystalline porosity.

Abstract: A surface-modified quantum dot luminophore includes a quantum dot luminophore and a coating includes a fluorinated coating including a fluorinated inorganic agent, a fluorinated organic agent, or a combination of fluorinated inorganic and organic agents, the fluorinated coating generating hydrophobic surface sites and the coating is disposed on the surface of the silicate luminophore.

Abstract: The present invention provides a heat conducting slug having a multi-step structure, which is installed to an LED package to dissipate heat generated from a light emitting chip to the outside. The heat conducting slug includes a first slug, a second slug formed on the first slug, and a third slug formed on the second slug, wherein the light emitting chip is mounted to the third slug, and the second and third slugs respectively shaped to have edges are arranged to cross each other. In this configuration, heat generated from a light emitting chip follows a heat dissipation path, in which the heat is gathered at edges of one slug and dissipated therefrom and then gathered toward edges of another slug, arranged to cross the one slug. Accordingly, the entire heat dissipation path is not concentrated at a specific region but generally distributed widely, thereby improving a heat dissipation effect of the heat conducting slug.

Abstract: Disclosed is a light-emitting module capable of not only improving appearance quality but also maximizing light efficiency. The disclosed light-emitting module comprises: a circuit board; a light-emitting diode chip which is flip-bonded on the circuit board; and a housing which is positioned on the circuit board and surrounds the light-emitting diode chip, wherein the housing has a recess and reflective part having a curvature structure formed on an inner wall of the recess.

Abstract: Disclosed herein is a light emitting device including: a substrate; a light emitting diode (LED) chip disposed on the substrate; and a phosphor sheet disposed on an upper portion of the LED chip and including alignment members formed on a lower surface thereof. The alignment members contact the LED chip, such that the phosphor sheet is aligned with the LED chip.

Abstract: A light emitting diode (LED) package includes an LED chip, a first lead frame and a second lead frame electrically connected to the LED chip and separated by a space, and a housing disposed on the first lead frame and the second lead frame. The housing includes an external housing surrounding a cavity, the cavity exposing a first portion of the first lead frame and a first portion of the second lead frame, and an internal housing disposed in the space, the internal housing covering a top portion of the first lead frame and a top portion of the second lead frame.

Abstract: The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia.

Abstract: A light-emitting diode (LED) dimmer for an LED lighting device, including a power switch, a drive voltage supply, and a LED light-emitting unit. Operating zones of the LED lighting device are changed in accordance with the switching of the power switch, and a dimming level for a next operating zone is determined on the basis of the dimming level and time while the power switch was on during the previous operating period.