Abstract: Images based on each of a plurality of color components are formed; the formed images are transferred on each transfer medium to form an image quality determining image; the image quality of the image quality determining image is determined on the basis of the detected density thereof, an adjustment image is formed by overlaying and transferring an image of other color component to be adjusted to the reference image of the reference color image out of the plurality of color components, on the transfer medium; the density of the adjustment image is detected; and the image forming position of the other color component to be adjusted is adjusted on the basis of the detected density.

Abstract: An optical disk using both grooves and lands as a recording track is provided with {circle around (1)} a data area for recording/reproducing data and {circle around (2)} DMAs (Data Management Areas) for managing a defective sector in the data area. The DMAs include four DMAs A–D all formed on the lands. The DMA B(D) is formed behind the ending sector of the DMA A(C). This arrangement realizes a DMA format having high resistance to defects and improving a processing rate. Consequently, highly reliable optical disk and optical disk apparatus can be provided.

Abstract: There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.

Abstract: A semiconductor memory device comprises a plurality of memory cells, each of which is capable of storing N-level data and being reprogrammed; and a plurality of monitor cells that separately store individual data values of the N-level data by using the same scheme as that used for the memory cells. Sensing means senses whether a physical quantity of the monitor cell which corresponds to the data value stored in the monitor cell is within a preset range; verification means verifies whether the physical quantity of the memory cell which corresponds to the data value stored in the memory cell is within the preset range when the sensing means has sensed that the physical quantity of the monitor cell is out of the preset range; correction means corrects the physical quantity.

Abstract: A semiconductor laser device and optical pickup in which the reflectance of the side beam at a header portion will not adversely affect the characteristics of the optical pickup, and superior in productivity, and a method of fabricating such a semiconductor laser device are obtained. A reflector is attached on a side beam incident region of a leading end plane of a header mounted with a laser chip that emits a laser beam. Said side beam is one of the two side beams generated by the reflected ±first order beams and fed back through the optical system returning towards the header portion to strike the side beam incident region. The reflector reflects side beam outside the optical system.

Abstract: In a semiconductor device in which a second semiconductor chip is layered on a first semiconductor chip mounted on a substrate, a mounting-use bonding layer being formed on a reverse surface of the second semiconductor chip with respect to a circuit formation thereof, the mounting-use bonding layer functions as a bonding agent and as a supporting member for supporting protruded part of the second semiconductor chip, which is protruded from an outer edge of the first semiconductor chip. In this semiconductor device, it is possible to bond the second semiconductor chip and the substrate stably by wire bonding.

Abstract: A display apparatus includes a display panel 110 including a light emitting device 120 for each of a plurality of pixels, and a light receiving device 130 provided on the display panel 110 for each of the plurality of pixels. The display panel 110 displays an image by using light output from the light emitting device 120 toward the panel front side. The light receiving device 130 receives a portion of light output from the light emitting device 120 toward the panel back side that is reflected by an irradiated object 10 located on the panel back side. Since the light used for displaying an image and the light used for reading an image are commonly output from the light emitting device 120, it is possible to display and read image information with a simple, thin and light-weight structure.

Abstract: A semiconductor device comprises; a MOS transistor formed on a semiconductor layer of an SOI substrate in which the semiconductor layer is formed on a semiconductor substrate with intervention of a buried insulating film, and a contact portion for applying to the semiconductor substrate different bias voltages in an operating state and a standby state of a semiconductor circuit including the MOS transistor.

Abstract: A demodulator controls gains of an RF-AGC amplifier and an IF-AGC amplifier so as to maintain an input level to the demodulator constant. In this case, the demodulator estimates a signal level of an RF input based on the sum of the gains directed to the both AGC amplifiers, and changes methods for distributing a gain to the AGC amplifiers, according to whether or not the signal level exceeds a predetermined Take Over Point. Further, a first detection and smoothing circuit detects an output level of the RF-AGC amplifier, and a second detection and smoothing circuit detects an output of a mixer. Besides, a comparison circuit controls the gain of the RF-AGC amplifier so that a difference between the output levels comes to be a predetermined value. With this structure, an automatic gain control circuit which can achieve high receiving sensitivity and low waveform distortion simultaneously can be realized even when manufacturing dispersion is caused.

Abstract: A semiconductor layer with a threshold voltage for n-channel is formed and patterned to TFT island areas. A gate insulating film is deposited. The first gate electrode layer is formed and pattered to form an opening. Phosphorous ions are implanted into a p-channel TFT in the opening to set threshold voltage for p-channel TFT. A second gate electrode layer is formed and patterned to form second gate electrodes. By using the first gate electrode layer as a mask, boron ions are implanted at a high concentration to form source/drain regions of the p-channel TFT. By using the second gate electrodes as a mask, the first gate electrode layer is etched to form gate electrodes. Phosphorous ions are implanted at a low concentration to form LDD regions. By using a fourth mask, P ions are implanted at a high concentration to form source/drain regions of n-channel TFTs.

Abstract: A first substrate includes, on one side thereof that is closer to a liquid crystal layer, a picture element electrode provided for each picture element region, a switching element, and a bus line. A second substrate includes a counter electrode opposing the picture element electrode. The picture element electrode includes a plurality of openings and a solid portion that includes a plurality of unit solid portions. In each picture element region, the liquid crystal layer takes a vertical alignment in the absence of an applied voltage, and forms a plurality of liquid crystal domains, each of which takes a radially-inclined orientation, in the plurality of openings and the solid portion by inclined electric fields produced at respective edge portions of the plurality of openings of the picture element electrode in response to an applied voltage.

Abstract: In the semiconductor laser device of the present invention, a P-type diffusion region 3A is disposed in an N? epitaxial layer 2 of a silicon submount 16, and an N-type diffusion region 4A is disposed in this P-type diffusion region 3A. The P-type diffusion region 3A and the N-type diffusion region 4A are positioned under a red laser diode 14, and the red laser diode 14 is directly connected on the N-type diffusion region 4A via electrodes 7, 8 without an insulating film. Consequently, a short circuit between the red laser diode 14 and the silicon submount 16 can be prevented. Therefore, according to this semiconductor laser device, occurrence of deterioration or failure of a semiconductor light-emitting element upon a high-temperature operation can be prevented.

Abstract: An image processing device of the present invention is provided with four kinds of sub masks in total including two kinds in a main scanning direction and two kinds in a sub scanning direction, in a main mask constituted by a plurality of pixels including a target pixel. In the image display device, when determining a target pixel of an inputted image data, a difference in a total density of the two kinds of sub masks in a main scanning direction is added to a normalized difference in total density of the two kinds of sub masks in a sub scanning direction, and a resultant value is compared with a threshold value so as to determine if the target pixel is an edge area or not.

Abstract: In an insertion operation for combined use of contents in a content editing device such as a portable phone, if content without being combined is authorized content, all restriction conditions that have been added to content to be inserted and existing content are initially extracted. The restriction condition refers to information restricting combination with other content or information restricting combination with specific content. The content editing device investigates whether or not the restriction condition described above is satisfied with respect to all contents, and allows insertion of the content in the existing content only when the restriction condition is satisfied.

Abstract: On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less.

Abstract: A card-type wireless communication device and a wireless communication system incorporating it, designed for low power consumption, comprises the first control block for controlling the first switching block so as to turn on or off power for each of the transmitter circuit, the base-band signal processing circuit, and the interface circuit independently in accordance with a plurality of different detection signals generated by the receiving signal level detection block according to the intensity of the received high-frequency signal; and the second control block for controlling the second switching block so as to turn on or off a plurality of amplifiers independently and controlling the third switching block so as to bring any amplifier that is turned on into the non-shortcircuited state and any amplifier that is turned off into the shortcircuited state.

Abstract: In a display driving apparatus of the present invention and a liquid display apparatus using the same, a DC current is supplied to a reference voltage generating circuit from both ends of a resistance of the resistance divided circuit, via a bypass circuit, which is a bypass other than a route from a power source. This arrangement allows the reference voltage generating circuit itself to compensate current supply ability of a reference voltage supplied from the power source, even if an output circuit is omitted from the arrangement, thereby preventing a waveform of a gradation display voltage from having non-sharp rising and falling edges, or preventing variation in voltage due to charging and discharging of a pixel capacitor. This ensures an accurate gradation display voltage.

Abstract: An image display device includes two data signal line drive circuits and two scan signal line drive circuits configured differently from each other. Different data signal line drive circuits and scan signal line drive circuit are compatible with different display formats. A display can be produced in the most suitable display format, and power consumption also can be reduced, by switch operating drive circuits according to the kind of input video and environmental conditions. Further, an image can be written over another image by writing video signals to signal lines with a time lag using a plurality of drive circuits; therefore, a superimposed display can be produced without externally processing the video signals. Thus, both a satisfactory image display and low power consumption can be achieved in an image display device.

Abstract: The periphery of a metal rotating shaft is covered with elastic foam material and the peripheral surface of the elastic foam material is coated with conductive adhesive. Before the layer of conductive adhesive hardens, a plurality of bristles is embedded vertically into the smooth material made of a layer of conductive adhesive, thus forming a bristle-embedded layer upon the periphery of the smooth material. Thereafter, the conductive adhesive to become the smooth material is hardened. Alternately, a metal shaft with an outside diameter slightly smaller than the inside diameter of the tube is inserted into the interior of the conductive tube, the tube is heated to cause heat shrinkage, thus tightly adhering the tube to the metal shaft, so that the metal shaft maintains the cylindrical shape of the tube. After the tube is coated with conductive adhesive, it is spirally wrapped with conductive brush cloth cut into strips.

Abstract: The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film.