Abstract: A power amplifier includes: a distortion compensating circuit that causes a bias circuit to have an output impedance so that a subsequent block bipolar transistor for signal amplification-use has a maximized saturated output power; and a distortion compensating circuit that causes a bias circuit to have an output impedance so that a distortion of an output power of the power amplifier 1 with respect to an input power is canceled by a distortion characteristic of an output power with respect to an input power of the subsequent block bipolar transistor for signal amplification-use which has a maximized saturated output power and a distortion characteristic of an output power with respect to an input power of the preceding block bipolar transistor for signal amplification-use. This makes it possible to provide a power amplifier that allows reduction in saturated output power brought by realization of a highly efficient low-distortion power amplifier.

Abstract: A method for forming a semiconductor laser chip is provided that can suppress layer discontinuity and simultaneously reduce fabrication variations in the light radiation angle in the horizontal direction. The method includes a step of forming, on an n-type GaAs substrate, a semiconductor element layer composed of a plurality of semiconductor layers including an etching marker layer, a step of forming, in a contact layer in the semiconductor element layer, a depressed portion having a depth not reaching the etching marker layer, and a step of forming a ridge portion by etching the semiconductor element layer by dry etching while monitoring, with laser light, the etching depth in the bottom region of the depressed portion.

Abstract: A radio communication system according to the present invention includes a video/audio transmitter (1) and a video/audio receiver (2) for transmission/reception of data including video data and audio data at a predetermined bit rate. The video/audio receiver (2) has an error information generation section (18) for detecting a communication state according to a signal from the video/audio transmitter (1). The video/audio transmitter (1) has a transmission section (6) for transmitting data while controlling to change the bit rate according to the communication state detected by the video/audio receiver (2). Unless the communication state satisfies a predetermined criterion, the transmission section (6) temporarily lowers the bit rate for transmitting the data to the video/audio receiver (2). Thus, even when the communication state deteriorates, it is possible to minimize deterioration of the video and audio data and transmit data without lowering the quality of the entire video and audio transmitted.

Abstract: A wireless receiver that includes a reception unit which, in the case in which the frequency bandwidth of the chunk is Fc, receives a) data to which phase rotation for controlling the maximum delay time between the plurality of transmission antennas is added so that the maximum delay time is set to either a predetermined first value which is smaller than 1/Fc or a predetermined second value which is larger than 1/Fc depending on whether transmission is performed using frequency diversity or transmission is performed using multi-user diversity and b) pilot channels corresponding to the plurality of transmission antennas which are orthogonal to each other; and a demodulating unit which demodulates the data based on transfer functions calculated using the pilot channels.

Abstract: A backlight device includes projections disposed on the back side of a light guide plate, and engagement holes engaging with the projections formed in a housing. The projections of the light guide plate are engaged with the engagement holes in the housing to prevent displacement of the light guide plate caused by vibration and impact. One surface of each projection is flush with a light incident surface, the area of that cross-section of each projection which is parallel or substantially parallel to the light incident surface is set such that it continuously decreases as the section is farther away from the light incident surface, and as a result, occurrence of a bright line and a dark line is prevented.

Abstract: In an electronic device of the present invention a gate Schottky electrode is formed on an active layer constructed of a GaN layer and an AlGaN layer, and a source ohmic electrode and a drain ohmic electrode are further formed on both sides of the gate Schottky electrode on the active layer. A dielectric layer (TiO2 layer) of a stepwise laminate structure is formed on the AlGaN layer so that the electric field distribution between the gate Schottky electrode and the drain ohmic electrode is substantially uniformed. The dielectric constant of TiO2 of the dielectric layer is made higher than the dielectric constant of GaN and AlGaN of the active layer.

Abstract: A cleaning device 70 includes: contact and release system 63 which switches a position of a cleaning roller 62 between a position where the cleaning roller 62 is in contact with a charging roller 61 and a position where the cleaning roller 62 is separated from the charging roller 61; and a voltage selecting section 71 which switches a voltage to be applied to the charging roller 61 from a DC voltage to an AC voltage during the rotation of a photoreceptor 11. The contact and release system 63 brings the cleaning roller 62 into contact with the charging roller 61 at the application of the AC voltage to the charging roller 61. This makes it possible to enhance performance on cleaning of the charging roller.

Abstract: A semiconductor laser device including a submount having a front surface and a back surface corresponding to the opposing face that are in parallel with each other and a visible light transmittance of 60% or more; a connection electrode that is formed on the front surface; and a semiconductor laser element that is packaged on the submount through the connection electrode, and is allowed to emit a laser beam in a direction parallel to the front surface.

Abstract: Provided is a nanocrystalline phosphor having a core/shell structure formed by a core of a group 13 nitride semiconductor and a shell layer, covering the core, including a shell film of a group 13 nitride mixed crystal semiconductor. This nanocrystalline phosphor has high luminous efficiency, and is excellent in reliability. Also provided is a coated nanocrystalline phosphor prepared by bonding modified organic molecules to the nanocrystalline phosphor and/or coating the nanocrystalline phosphor with the modified organic molecules. This coated nanocrystalline phosphor has high dispersibility. Further provided is a method of preparing a coated nanocrystalline phosphor by heating a mixed solution containing a core of a group 13 nitride semiconductor, a nitrogen-containing compound, a group 13 element-containing compound and modified organic molecules.

Abstract: Compounds of formula I: (wherein variables A1, A2, A3, A4, m, n, J, Q, R4, Ea, Eb, Ec, R6, R7, Re, Rf, RPG and Y are as described herein) which are antagonists of CGRP receptors and which are useful in the treatment or prevention of diseases in which the CGRP is involved, such as migraine. The invention is also directed to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the prevention or treatment of such diseases in which CGRP is involved.

Abstract: In a transistor adapted to suppress characteristic degradation resulting from fluorine contained in a deposited film, the concentration of fluorine contained in a gate insulating film is reduced to 1.0×1020 atoms/cm3 or less. As a result, the transistor can provide excellent reliability even when it is continuously driven for a long period of time at a relatively high temperature.

Abstract: A focus state display apparatus comprising focus area extraction means for extracting the image signals of a predetermined area from photographed image signals, edge enhancement processing means for enhancing the edge of the extracted image signals, time integration value calculation means for calculating an integration value of the edge-enhanced image signals in a certain period of time, focus state determination means for determining the focus state of the photographed image signals on the basis of the calculated integration value, and focus state display means for displaying the determined focus state. A user is capable of readily determining the focus state of a camera and confirming and adjusting the focus thereof with accuracy even in a display apparatus of a camera-equipped portable terminal device, where the size and resolution thereof are limited.

Abstract: A method and corresponding system for communicating between stations in a network is presented. The method includes providing repeated beacon transmissions from a coordinator station for coordinating transmissions among the stations; transmitting a signal from a first station and receiving the signal at a second station; and performing one or both of: generating the signal based on a local clock at the first station and time adjustment information in a beacon transmission received by the first station, and sampling the signal at sample times based on a local clock at the second station and time adjustment information in a beacon transmission received by the second station.

Abstract: In a backlight device, among a plurality of light emitting diodes, light amounts thereof are measured in advance, and they are classified as any one of two or more light amount ranks according to the measurement results. In each of an upper region and a lower region of the light emitting diodes that are set on an upper side and lower side of a light guide plate, respectively, the light emitting diodes that are classified as having the same light amount rank are disposed.

Abstract: A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.

Abstract: This invention concerns compositions for the treatment of urinary frequency, urinary urgency and urinary incontinence comprising (R)-N-[4-[2-[[2-hydroxy-2-(pyridin-3 -yl)ethyl]amino]ethyl]phenyl]-4-[4-(4-trifluoromethylphenyl)thiazol-2-yl]benzenesulfonamide and pharmaceutically acceptable salts thereof. In another aspect, this invention concerns combination therapy for urinary frequency, urinary urgency and urinary incontinence wherein one of the active agents is (R)-N-[4-[2-[[2-hydroxy-2-(pyridin-3-yl)ethyl]amino]ethyl]phenyl]-4-[4-(4-trifluoromethylphenyl)thiazol-2-yl]benzenesulfonamide and pharmaceutically acceptable salts thereof.

Abstract: There is provided a physical property measuring method for a TFT liquid crystal panel, includes an impedance setting step of setting the impedance between the source and drain of a TFT of the TFT liquid crystal panel to be less than or equal to a predetermined value, a voltage application step of applying a voltage that cyclically varies to a liquid crystal layer of the TFT liquid crystal panel. And the method further includes a physical property measuring step of measuring a transient current flowing through the liquid crystal layer to which the voltage that cyclically varies is applied in the voltage application step to measure physical properties of the liquid crystal layer.

Abstract: The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.

Abstract: A display includes a display panel, a light guide plate arranged on the back side of the display panel, an LED arranged in the vicinity of the side surface of the light guide plate, a circuit board arranged on the back side of the light guide plate, and a plurality of TABs connecting the display panel and the circuit board. The LEDs are arranged between the plurality of TABs in the plan view, and the TAB is arranged to overlap the LED in the side view. In order to achieve uniform illumination with no unevenness in luminance, the TAB and the spot light source are preferably arranged alternately.

Abstract: A fabrication method of a nitride-based semiconductor device includes the steps of forming a stacked structure constituted of a nitride-based semiconductor on a support substrate, depositing a first bonding metal on the stacked structure, depositing a second bonding metal on a retention substrate, bonding the first bonding metal and the second bonding metal in a state where the first bonding metal and the second bonding metal face each other to unite the retention substrate and the stacked structure, wherein the first bonding metal and the second bonding metal constitute the bonding metal, and separating the support substrate from the stacked structure for removal. The area of the surface of the retention substrate is set smaller than the area of the surface of the support substrate. Accordingly, cracking, fracture, chipping, and the like at the retention substrate can be prevented.