Abstract: A film-forming method for heat-treating a raw material solution atomized into a mist and performing a film-formation, and the method includes the following steps: atomizing the raw material solution or making the raw material solution into droplets to generate a mist; conveying the mist to a film-forming part by a carrier gas; and supplying the mist from a nozzle to a substrate, heat-treating the mist on the substrate, and performing the film-formation in the film-forming part, wherein with the area of an opening surface of the nozzle being S [cm2], the longest distance among distances between points in the opening surface and the surface of the substrate being H [cm], and the flow rate of the carrier gas supplied from the nozzle being Q [L/min], SH/Q?0.015 results.

Abstract: A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.

Abstract: Provided is a method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate 11 having an off-angle of 0.5° to 5° to a high-temperature nitriding treatment at 800° C. to 1,000° C. to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate 11 to produce a GaN film carrier having a surface of an N polar face; forming an ion implantation region 13ion by carrying out ion implantation on the GaN film 13; laminating and joining a support substrate 12 with the GaN film-side surface of the ion-implanted GaN film carrier; and separating at the ion-implanted region 13ion in the GaN film 13 to transfer a GaN thin film 13a onto the support substrate 12, to produce a GaN layered substrate 10 having, on the support substrate 12, a GaN thin film 13a having a surface of a Ga polar face.

Abstract: A bio-electrode composition contains (A) an ionic polymer material. The component (A) is a polymer compound containing: a repeating unit-a having a structure selected from the group consisting of salts of ammonium, sodium, potassium, and silver formed with any of fluorosulfonic acid, fluorosulfonimide, and N-carbonyl-fluorosulfonamide; and a repeating unit-b having a side chain with a radical-polymerizable double bond in a structure selected from the group consisting of (meth)acrylate, vinyl ether, and styrene. Thus, the present invention provides: a bio-electrode composition capable of forming a living body contact layer for a bio-electrode to enable signal collection immediately after attachment to skin and prevention of residue on the skin after peeling from the skin; a bio-electrode including a living body contact layer formed of the bio-electrode composition; and a method for manufacturing the bio-electrode.

Abstract: A method for forming a film, including: forming a film on a base body; and discharging a gas with a discharging unit. A channel plate is above and opposite to the base body via a space. A mixed gas flow linearly flows from a mixed gas supplying unit toward the discharging unit so that the mixed gas through the space above the base body is along at least part of a main surface of the base body. A projection is formed on a part of: the channel plate and/or the stage to inhibit deviation of the mixed gas flow from a direction toward the discharging unit. The channel plate and projection are provided so that a gap having a width smaller than a shortest distance in the space between the channel plate and the base body is formed, and the film-formation and the discharging are performed.

Abstract: A method of producing a raw material solution for a film-forming according to a Mist CVD method including a temperature at which a solute containing a metallic element is mixed with a solvent and stirred is 30° C. or higher, and a method of film-forming according to the Mist CVD method using a raw material solution produced by the method of producing the raw material solution.

Abstract: An onium salt type monomer having the following formula (a1) or (a2).

Abstract: In a method for producing hydrogen and carboxylic acid, a primary alcohol of 1 to 7 carbon atoms and water are reacted by being continuously introduced into a flow reactor packed with a solid catalyst consisting of an alloy of ruthenium and tin on a support and passed through the reactor under temperature and pressure conditions at which the water assumes a gaseous state. This method enables hydrogen and carboxylic acid to be produced in a high yield or at a high purity from a primary alcohol and water in a short time and by simple operations.

Abstract: A process for process for preparing 6-isopropenyl-3-methyl-9-decenyl acetate of the following formula (3), wherein Ac represents an acetyl group, the process comprising steps of: preparing a nucleophilic reagent, 5-isopropenyl-2-methyl-8-nonenyl compound, of the following general formula (1): wherein M1 represents Li, MgZ1, ZnZ1, Cu, CuZ1, or CuLiZ1, wherein Z1 represents a halogen atom or a 5-isopropenyl-2-methyl-8-nonenyl group, from a 5-isopropenyl-2-methyl-8-nonenyl halide compound of the following general formula (4): wherein X1 represents a halogen atom; subjecting the nucleophilic reagent (1), 5-isopropenyl-2-methyl-8-nonenyl compound, to an addition reaction with at least one electrophilic reagent selected from the group consisting of formaldehyde, paraformaldehyde, and 1,3,5-trioxane, followed by a hydrolysis reaction to form 6-isopropenyl-3-methyl-9-decenol of the following formula (2); and acetylating 6-isopropenyl-3-methyl-9-decenol (2) to form 6-isopropenyl-3-methyl-9-decenyl acetate (3).

Abstract: A negative electrode active material for a non-aqueous electrolyte secondary battery, containing negative electrode active material particles, including silicon compound particles each containing a silicon compound (SiOx: 0.5?x?1.6) and at least one or more of Li2SiO3 and Li2Si2O5, the material includes a phosphate, the negative electrode active material particles each have a surface containing lithium element, and a ratio mp/ml satisfies 0.02?mp/ml?3, where ml represents a molar quantity of the lithium element and contained per unit mass of the particles, and mp represents a molar quantity of phosphorus element contained per unit mass of the particles. Thereby, a negative electrode active material is capable of stabilizing an aqueous negative electrode slurry prepared in producing a negative electrode of a secondary battery, and capable of improving initial charge-discharge characteristics when the negative electrode active material is used for a secondary battery.

Abstract: Provided is a curable resin composition for a bonding film that has a high adhesion force to a copper foil with a small surface roughness, maintains a high adhesion force even after HAST, and can also be turned into a cured product superior in dielectric properties. The curable resin composition for a bonding film that is to be bonded to a copper foil, contains: (A) a maleimide compound having at least one dimer acid frame-derived hydrocarbon group per molecule, that is represented by the following formula (1), (2) or (3) wherein A independently represents a tetravalent organic group having a cyclic structure, B independently represents a divalent hydrocarbon group having 6 to 60 carbon atoms and is a hydrocarbon group other than a dimer acid frame-derived hydrocarbon group, D represents a dimer acid frame-derived hydrocarbon group, m, l and n are each 1 to 100; and (B) a catalyst.

Abstract: A nitride semiconductor substrate includes: a heat-resistant support substrate having a core including nitride ceramic enclosed in an encapsulating layer; a planarization layer provided on the heat-resistant support substrate; a silicon single crystal layer having a carbon concentration of 1×1017 atoms/cm3 or higher provided on the planarization layer; a carbonized layer containing silicon carbide as a main component and having a thickness of 4 to 2000 nm provided on the silicon single crystal layer; and a nitride semiconductor layer provided on the carbonized layer. This provides a high-quality nitride semiconductor substrate (a nitride semiconductor substrate particularly suitable for GaN-based high mobility transistors (HEMT) for high-frequency switches, power amplifiers, and power switching devices); and a method for producing the same.

Abstract: A resist composition comprising a polymer or polymer-bound photoacid generator is provided, the polymer comprising repeat units derived from a sulfonium or iodonium salt having a urethane, thiourethane or urea bond in a linker between a polymerizable unsaturated bond and a fluorosulfonic acid site. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising units containing a phenolic hydroxy group and units containing a phenolic hydroxy group protected with an acid labile group, in which a carbon atom neighboring the carbon atom to which the phenolic hydroxy group protected with an acid labile group is attached is substituted with a specific group. A resist pattern with a high resolution, reduced LER, rectangularity, minimized influence of develop loading, and few development residue defects can be formed.

Abstract: A method for manufacturing a surface-treated gas-phase-process silica particle, the method including steps of: adding 1,3-divinyl-1,1,3,3-tetramethyldisilazane to a raw material gas-phase-process silica particle and introducing a vinyldimethylsilyl group on a surface of the raw material gas-phase-process silica particle to obtain a preliminarily treated silica particle; and adding hexamethyldisilazane to the preliminarily treated silica particle and introducing a trimethylsilyl group on a surface of the preliminarily treated silica particle to obtain a surface-treated gas-phase-process silica particle.

Abstract: A polymer (P) to generate an acid by light exposure and to change in solubility in a developer with an action of the acid, the polymer containing: a repeating unit represented by the following formula (A-1); a repeating unit represented by any one or more selected from the following formulae (B-1), (B-2), (B-3), and (B-4) to generate an acid by light exposure; and a repeating unit represented by the following formula (a-1) or (a-2) other than the repeating unit represented by the formula (A-1). This provides a polymer to be contained in a resist composition that is excellent in etching resistance and that makes it possible to form a pattern with high sensitivity, high resolution, high contrast, and small LWR and CDU when using, in particular, an electron beam or an extreme ultraviolet ray (EUV) having a wavelength of 13.5 nm; a resist composition containing the polymer; and a patterning process using the resist composition.

Abstract: Provided is an addition-reaction-curable organopolysiloxane composition comprising (A) an organopolysiloxane having at least two silicon-atom-binding alkenyl groups per molecule, (B) an organohydrogenpolysiloxane having at least two silicon-atom-binding hydrogen atoms (Si—H groups) per molecule, (C) an organopolysiloxane having at least one (meth)acryl group per molecule, (D) a linear olefin having a melting point of 20° C. or lower and a flash point of 40° C. or higher, and (E) a platinum-group metal-based catalyst, in which the amount of a metal other than a platinum-group metal is 100 ppm or less, the addition-reaction-curable organopolysiloxane composition can be cured satisfactorily and exhibits satisfactory adhesiveness even when the amount of the platinum-group metal-based catalyst is small, and an acryl-group-containing silicone cannot be precipitated and separated over time.

Abstract: A resist composition contains an acid generator which is a sulfonium or iodonium salt containing a sulfonic acid anion having a cyclic structure and a fluorosulfonic acid site which are linked by a linker. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: An adhesive composition, including: a reaction product (A) among a bifunctional epoxy resin represented by the formula (2), a tri- or more functional epoxy resin represented by the formula (3), and a saturated acid anhydride represented by the following general formula (4); a UV-sensitive reaction initiator (B); and a dilution solvent (C), wherein the component (A) is a compound represented by the formula (1), a ratio of a total mole of epoxy groups in the multi-functional epoxy resin to a mole of the saturated acid anhydride is 1.30 to 3.00, and a mole of the bifunctional epoxy resin relative to a total mole of the multi-functional epoxy resin is 0.001 to 0.15. This provides a highly reliable epoxy-resin-based adhesive composition and film-shaped sealing material having a low viscosity, curability at low temperature, and high adhesiveness, and retaining power generation performance of a perovskite solar cell before and after sealing.

Abstract: A compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound for forming a metal-containing film is represented by the following general formula (M-1) or (M-2). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; a patterning process in which the composition is used as a resist underlayer film material; a patterning process in which the composition is used as a resist material; and a semiconductor photoresist material containing the composition.