Abstract: A semiconductor device includes: a substrate; a semiconductor element that disposed on the upper surface of the substrate; a sealing portion that seals the substrate and the semiconductor element; a first lead frame that has one end in contact with a upper surface of the first conductive layer at an end extending in the side direction of the upper surface of the substrate in the sealing portion, and has the other end exposed from the sealing portion; a first conductive bonding material that bonds between the upper surface of the first conductive layer and the lower surface side of the one end portion of the first lead frame at the end portion of the substrate, and has electrical conductivity.

Abstract: An electronic module has a sealing part 90; a rear surface-exposed conductor 10, 20, 30 having a rear surface-exposed part 12, 22, 32 whose rear surface is exposed; a rear surface-unexposed conductor 40, 50 whose rear surface is not exposed; an electronic element 15, 25, which is provided in the sealing part 90 and provided on a front surface of the rear surface-exposed conductor 40, 50; a first connector 60 for electrically connecting the electronic element 15, 25 with the rear surface-exposed conductor 10, 20, 30; and a second connector 70 for electrically connecting the electronic element 15, 25 with the rear surface-unexposed conductor 40, 50. A thickness T1 of the first connector 60 is thicker than a thickness T2 of the second connector 70.

Abstract: An electronic module has a first substrate 11, a first electronic element 13 provided on one side of the first substrate 11, a first connection body 60 provided on one side of the first electronic element 13, a second electronic element 23 provided on one side of the first connection body 60, a second substrate 21 provided on one side of the second electronic element 23, and an abutment body 250 that abuts on a face on one side of the second electronic element 23 and is capable of imparting a force toward one side with respect to the second substrate 21.

Abstract: A semiconductor component 150 has a semiconductor layer 1 including a winding wire part 10 and a winding return wire part 50 connected at a terminal end part of the winding wire part 10 and returning from the terminal end part toward a starting end part side, wherein the semiconductor component is disposed so as to surround an object to be measured.

Abstract: A switching element control circuit: a third electrode voltage control part; a temperature detection part; a first electrode current detection part; a memory part which stores information including an initial threshold voltage and an operation temperature/first electrode current characteristic of the threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the initial threshold voltage, the operation temperature of the switching element, and a first electrode current, and information relating to an operation temperature/first electrode current characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

Abstract: A semiconductor device has a first electrode 61; a second electrode 62; and a semiconductor layer 1 having a winding wire part 10 provided so as to surround a current flowing between the first electrode 61 and the second electrode 62, a winding return wire part, which is provided so as to surround the current, is connected to a terminal end part of the winding wire part 10 and returns toward a starting end part side from the terminal end part, and an integration circuit configuration part connected to the winding wire part 10 or the winding return wire part. The integration circuit configuration part has one or more of a resistance part 115, a capacitor part 125 and an operational amplifier part 135.

Abstract: An electronic module has a first substrate 11, a first conductor layer 12 that is provided on one side of the first substrate 11, a first electronic element 13 that is provided on one side of the first conductor layer 12, a second electronic element 23 that is provided on one side of the first electronic element 23, and a second connecting body 70 that has a second head part 71 provided on one side of the second electronic element 23 and an extending part 75 extending from the second head part 71 to the other side and abutting against the first substrate 11 or the first conductor layer 12.

Abstract: A detection substrate 150 has a body film 1a having a through hole 91; a winding wire part 10 provided on a surface of one side of the body film 1a, on a surface of another side of the body film 1a and in the through hole 91, and disposed so as to surround a current to be detected; and a winding return wire part 50, provided on the body film 1a, connected at a terminal end part of the winding wire part 10 and returning from the terminal end part toward a starting end part side.

Abstract: [Problem] An object is to provide an inverter circuit that can improve the efficiency and stabilize the operation, the inverter circuit executes normal control when the output voltage rises, even when the output frequency is low, and the inverter circuit divides the normal control and regenerative control operations so that the regenerative control is executed when the output voltage drops. [Solution] When the error value is greater than or equal to the first threshold value, the control unit of the inverter circuit executes a normal control of the capacitive load, by operating the primary side switch with the secondary side switch turned off, and on the other hand, when the error value is less than the first threshold value, the control unit executes a regenerative control to the direct current power supply, by operating the secondary side switch with the primary side switch turned off.

Abstract: A method of manufacturing a chip module comprises a step of disposing a first electronic element 13 on a first jig 500, a step of disposing a first connector 60 on the first electronic element 13 via a conductive adhesive 5, a step of disposing a second electronic element 23 on the first connector 60 via a conductive adhesive 5, a step of disposing a second connector 70 on a second jig 550, a step of reversing the second jig in a state where the second connector 70 is fixed to the second jig 550 and disposing the second connector 70 on the second electronic element 23 via a conductive adhesive 5, and a step of curing the conductive adhesives 5.

Abstract: A wide gap semiconductor device has: a drift layer 12 using wide gap semiconductor material being a first conductivity type; a plurality of well regions 20 being a second conductivity type and formed in the drift layer 12; a polysilicon layer 150 provided on the well regions 20 and on the drift layer 12 between the well regions 20; an interlayer insulating film 65 provided on the polysilicon layer 150; a gate pad 120 provided on the interlayer insulating film 65; and a source pad 110 electrically connected to the polysilicon layer 150.

Abstract: A semiconductor switch control circuit includes: a pulse signal generating part configured to generate a pulse signal which becomes a time reference for performing an ON/OFF control of a semiconductor switch; a drive current generating part configured to generate a drive current based on the pulse signal which the pulse signal generating part generates and to supply the drive current to a gate electrode of the semiconductor switch; a current detecting part configured to detect a drain current or a source current of the semiconductor switch; and a drive current control part configured to have a function of controlling a drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the current which the current detecting part detects.

Abstract: A vehicle lighting control device that controls lighting of a plurality of LED units mounted on a vehicle including an electronic device, the vehicle lighting control device including: a plurality of converters that are connected to a power supply and transform a power supply voltage supplied from the power supply; an output circuit that is connected to an output of the converter and outputs a drive signal to the LED unit with a voltage transformed by the converter; and a processor that generates a plurality of switching signals and outputs the generated switching signals to the corresponding converters, wherein at least one of a rising timing and a falling timing differs between the plurality of switching signals output to the plurality of converters.

Abstract: An electronic module has a sealing part 90; electronic elements 15, 25 provided in the sealing part 90; rear surface-exposed conductors 10, 20, 30 having rear surface-exposed parts whose rear surface are exposed from the sealing part 90, and having one-terminal parts 11, 21, 31, which extend from the rear surface-exposed parts 12, 22, 32 and protrude outwardly from a side of the sealing part 90; and rear surface-unexposed conductors 40, 50 having unexposed parts 42, 52, which are sealed in the sealing part 90, and having other-terminal parts 41, 51, which extend from the unexposed parts 42, 52 and protrude outwardly from a side of the sealing part 90. The electronic elements 15, 25 are placed on the rear surface-exposed parts 12, 22, 32. The other-terminal parts 41, 51 have a width narrower than a width of the one-terminal parts 11, 21, 31.

Abstract: An electronic module has a rear surface-exposed conductor 10, 20, 30 having a rear surface-exposed part 12, 22, 32 whose rear surface is exposed; an electronic element 15, 25 provided on a front surface of the rear surface-exposed conductor 10, 20, 30; and a connector 60 configure to connect the rear surface-exposed conductor 10, 20, 30 and the electronic element 15, 25 or two rear surface-exposed conductors 10, 20, 30 each other. A groove 150 is provided on the front surface of the rear surface-exposed conductor 10, 20, 30. The sealing part 90 is provided with a press hole or a press impression 110, 120, 130 used to press the rear surface-exposed conductor 10, 20, 30. In an in-plane direction, a center portion of the press hole or the press impression 110, 120, 130 is provided on the side opposite to the connector 60 or the electronic element 15, 25 with respect to the groove 150.

Abstract: An electronic device has a sealing part 90, a first main terminal 11 protruding outward from the sealing part 90, a second main terminal 12 protruding outwardly from the sealing part, an electronic element 95 provided in the sealing part and having a front surface electrically connected to the first main terminal 11 and a back surface electrically connected to the second main terminal 12, a head part 40 connected to the front surface of the electronic element 95, a sensing terminal 13 protruding to an outside from the sealing part 90 and used for sensing and a connection part 35 integrally formed with the head part 40 and electrically connected to the sensing terminal 13. A current flowing through the sensing terminal 13 and the connection part 35 among a sensing current path does not overlap a main current path flowing through the second main terminal 12, the electronic element 95 and the first main terminal 11.

Abstract: An electronic component has a base 10; an electronic element 20 provided on one side of the base 10; a connecting body 30 provided on one side of the electronic element 20; a heat dissipating block 40 provided on one side of the connecting body 30; an insulating part 50 provided between the connecting body 30 and the heat dissipating block 40; and a sealing part 90 in which the electronic element 20, the connecting body 30 and the insulating part 50 are sealed. At least a part of a surface on another side of the base 10 is exposed from the sealing part 90. At least a part of a surface on one side of the heat dissipating block 40 is exposed from the sealing part 90.

Abstract: A semiconductor device includes: a drift layer of a first conductivity type which is made of silicon carbide; a junction region formed on one main surface of the drift layer; a junction termination extended region of the drift layer, the junction termination extended region being formed outside the junction region when the one main surface is viewed in plan view, and the junction termination extended region containing an impurity of a second conductivity type opposite to the first conductivity type; and a guard ring region of the drift layer, the guard ring region being formed at a position overlapping the junction termination extended region when the one main surface is viewed in plan view, and the guard ring region containing the impurity of the second conductivity type with a concentration that is higher than that of the junction termination extended region, wherein in the junction termination extended region, the concentration of the impurity of the second conductivity type in a depth direction from the o

Abstract: A wide gap semiconductor device has: a drift layer using wide gap semiconductor material being a first conductivity type; a well region being a second conductivity type and provided in the drift layer; a source region provided in the well region; a gate contact region provided in the well region and electrically connected to a gate pad; and a Zener diode region provided in the well region and provided between the source region and the gate contact region.

Abstract: An electronic module has a first electronic unit having a first substrate 11, a first conductor layer 12 provided on one side of the first substrate 11, and a first electronic element 13 provided on one side of the first conductor layer 12, a first connection body 60 provided on one side of the first electronic element 13, and a second electronic unit having a second electronic element 23 provided on one side of the first connection body 60. The first connection body 60 has a first head part 61 and a plurality of support parts 65 extending from the first head part 61. The electronic module is characterized by that the support part 65 abuts on the first substrate 11 or the first conductor layer 12.