Abstract: A pulsed laser diode driver includes an inductor having a first terminal configured to receive a source voltage. A source capacitor has a first terminal connected to the first terminal of the inductor to provide the source voltage. A bypass switch has a drain node connected to a second terminal of the inductor and to a first terminal of a bypass capacitor. A laser diode switch has a drain node connected to the second terminal of the inductor. A laser diode has an anode connected to a source node of the laser diode switch and a cathode connected to a bias voltage node. The laser diode switch and the bypass switch control a current flow through the inductor to produce a high-current pulse through the laser diode, the high-current pulse corresponding to a peak current of a resonant waveform developed at the anode of the laser diode.

Abstract: A thyristor tile includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. A thyristor includes a plurality of PNP tiles and a plurality of NPN tiles. The PNP and NPN tiles are arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles. Interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.

Abstract: A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well.

Abstract: A power transistor is switched on and off with an on-time that is held constant and an off-time that is varied. When the off-time is detected to be less than a threshold value that is greater than a minimum off-time limit, the on-time is extended. Then the power transistor is switched on and off with the extended on-time that is held constant and the off-time that varies.

Abstract: A method for forming a semiconductor device involves providing a semiconductor wafer having an active layer of a first conductivity type. First and second gates having first and second gate polysilicon are formed on the active layer. A first mask region is formed on the active layer. Between the first and second gates, using the first mask region, the first gate polysilicon, and the second gate polysilicon as a mask, a deep well of a second conductivity type, a shallow well of the second conductivity type, a source region of the first conductivity type, and first and second channel regions of the second conductivity type, are formed. In the active layer, using one or more second mask regions, first and second drift regions of the first conductivity type, first and second drain regions of the first conductivity type, and a source connection region of the second conductivity type, are formed.

Abstract: A laser diode driver includes a clock terminal to receive a clock signal, configuration terminals to receive configuration data, drive terminals, and charging terminals. A first charging terminal is operable to charge a source capacitor of a resonant circuit that includes the source capacitor, an inductor, and a bypass capacitor. Each drive terminal is operable to be directly electrically connected to an anode or cathode of a laser diode or to ground. A mode, output selection, and grouping of drive signals that are delivered to the laser diodes are configured based on the configuration data. The laser diode driver is operable to control a current flow through the resonant circuit to produce high-current pulses through the laser diodes, the high-current pulses corresponding to a peak current of a resonant waveform developed at respective anodes of the laser diodes, a timing of the high-current pulses being synchronized using the clock signal.

Abstract: An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.

Abstract: A pulsed laser diode driver includes an inductor having a first terminal configured to receive a source voltage. A source capacitor has a first terminal connected to the first terminal of the inductor to provide the source voltage. A bypass switch has a drain node connected to a second terminal of the inductor and to a first terminal of a bypass capacitor. A laser diode has an anode connected to the second terminal of the inductor and to the drain node of the bypass switch. A laser diode switch has a drain node connected to a cathode of the laser diode. The laser diode switch and the bypass switch control a current flow through the inductor to produce a high-current pulse through the laser diode, the high-current pulse corresponding to a peak current of a resonant waveform developed at the anode of the laser diode.

Abstract: A transformer includes first and second primary windings serially electrically connected in a primary-side series combination. The transformer further includes a secondary winding disposed between the first primary winding and the second primary winding. The transformer further includes first and second shielding windings serially electrically connected in a shielding series combination. The first shielding winding is disposed between the first primary winding and the secondary winding, and the second shielding winding is disposed between the second primary winding and the secondary winding.

Abstract: A regenerative gate charging circuit includes an inductor coupled to a gate of a FET. An output control circuit is coupled to a timing control circuit and a bridged inductor driver, which is coupled to the inductor. A sense circuit is coupled to the gate and to the timing control circuit, which receives a control signal, generates output control signals in accordance with a first timing profile, and transmits the output control signals to the output control circuit. In accordance with the first timing profile, the output control circuit holds switches or controllable current sources of the bridged inductor driver in an ON state for a first period and holds the switches or controllable current sources in an OFF state for a second period. Gate voltages are sampled during the second period and after the first period. The timing control circuit generates a second timing profile using the sampled voltages.

Abstract: A closed-loop switch-mode boost converter includes a switching signal generator circuit, a switch-mode boost amplifier, a filter circuit, and an error amplifier circuit. The switching signal generator circuit receives an input signal and outputs a switching signal. A duty-cycle of the switching signal has a first non-linear relationship to an amplitude of the input signal. The switch-mode boost amplifier receives the switching signal and produces an output signal. An amplitude of the output signal has a second non-linear relationship to the duty-cycle of the switching signal, and the output signal has a linear relationship to the input signal based on the first and second non-linear relationships. The filter circuit receives the output signal and outputs a filtered output signal. The error amplifier circuit receives the input signal and the filtered output signal and produces a feedback control signal. The filtered output signal is adjusted based on the feedback control signal.

Abstract: An apparatus includes a high-pass filter circuit configured to receive a drain-source voltage from a drain node of a synchronous rectifier switch at a secondary-side of a power converter and to generate a filtered drain-source voltage using the received drain-source voltage. A current comparison circuit of the apparatus is configured to receive a current indicative of a current through the synchronous rectifier switch and to generate a current comparison signal using the received current. An auto-tuning controller of the apparatus is configured to turn the synchronous rectifier switch on upon determining a body diode conduction of the synchronous rectifier switch, commence an auto-tuned delay upon determining that the current through the synchronous rectifier switch has changed direction, turn the synchronous rectifier switch off upon expiration of the auto-tuned delay, and update, during a detection window of time, a duration of the auto-tuned delay based on the filtered drain-source voltage.

Abstract: A method for forming a semiconductor device involves providing a semiconductor wafer having an active layer of a first conductivity type. First and second gates having first and second gate polysilicon are formed on the active layer. A first mask region is formed on the active layer. Between the first and second gates, using the first mask region, the first gate polysilicon, and the second gate polysilicon as a mask, a deep well of a second conductivity type, a shallow well of the second conductivity type, a source region of the first conductivity type, and first and second channel regions of the second conductivity type, are formed. In the active layer, using one or more second mask regions, first and second drift regions of the first conductivity type, first and second drain regions of the first conductivity type, and a source connection region of the second conductivity type, are formed.

Abstract: An apparatus for controlling a power converter includes an analog-to-digital converter to generate a digital representation of a voltage sense signal indicative of an input voltage of the power converter. The apparatus includes a first comparison circuit to generate a first comparison signal using a current sense signal indicative of a current through a primary-side switch of the power converter. The apparatus includes a gate driver to provide a gate drive signal to the primary-side switch based on a control signal, and a digital controller. The digital controller is configured to produce a time scalar value using the digital representation of the voltage sense signal, produce a timing signal using the control signal and the first comparison signal, scale the timing signal using the time scalar value, and adjust a timing of the control signal to limit a peak current through the primary-side switch based on the scaled timing signal.

Abstract: An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.

Abstract: An active clamp circuit for a power converter having a transformer includes a switch having a drain node, a gate node, and a source node, the drain node configured to be connected to a first terminal of a primary winding of the transformer, a capacitor having a first terminal connected to the source node, and a second terminal to be connected to a second terminal of the primary winding, a gate driver coupled to the gate node to control the switch and having a high-side input node and a low-side input node, the low-side input node being coupled to the first terminal of the capacitor, and a voltage regulator to: i) receive an input voltage from the second terminal of the capacitor, and ii) provide a regulated voltage to the high-side input node using the input voltage and being of a sufficient voltage level to control the switch.

Abstract: A circuit for regenerative gate charging includes an inductor coupled to a gate of a FET. An output control circuit is coupled to a timing control circuit and a bridged inductor driver, which is coupled to the inductor. A sense circuit is coupled to the gate and to the timing control circuit, which receives a control signal, generates output control signals in accordance with a first switch timing profile, and transmits the output control signals to the output control circuit. In accordance with the first switch timing profile, the output control circuit holds switches of the bridged inductor driver in an ON state for a first period and holds all of the switches in an OFF state for a second period. Gate voltages are sampled during the second period and after the first period. The timing control circuit generates a second switch timing profile using the sampled voltages.

Abstract: A charge pump having only NMOS devices charges a plurality of capacitors to a parallel charged voltage level by electrically connecting the capacitors in parallel between an input voltage node and a ground by activating a plurality of first NMOS transistor switches and a plurality of second NMOS transistor switches and deactivating a plurality of third NMOS transistor switches. The charge pump then generates a series capacitor output voltage level at a capacitor series output node by electrically connecting and discharging the capacitors in series between the input voltage node and the capacitor series output node by activating the third NMOS transistor switches and deactivating the first NMOS transistor switches and the second NMOS transistor switches.

Abstract: A pulsed laser diode driver includes an inductor having a first terminal configured to receive a source voltage. A source capacitor has a first terminal connected to the first terminal of the inductor to provide the source voltage. A bypass switch has a drain node connected to a second terminal of the inductor and to a first terminal of a bypass capacitor. A laser diode has an anode connected to the second terminal of the inductor and to the drain node of the bypass switch. A laser diode switch has a drain node connected to a cathode of the laser diode. The laser diode switch and the bypass switch control a current flow through the inductor to produce a high-current pulse through the laser diode, the high-current pulse corresponding to a peak current of a resonant waveform developed at the anode of the laser diode.

Abstract: An apparatus includes a high-pass filter circuit configured to receive a drain-source voltage from a drain node of a synchronous rectifier switch at a secondary-side of a power converter and to generate a filtered drain-source voltage using the received drain-source voltage. A current comparison circuit of the apparatus is configured to receive a current indicative of a current through the synchronous rectifier switch and to generate a current comparison signal using the received current. An auto-tuning controller of the apparatus is configured to turn the synchronous rectifier switch on upon determining a body diode conduction of the synchronous rectifier switch, commence an auto-tuned delay upon determining that the current through the synchronous rectifier switch has changed direction, turn the synchronous rectifier switch off upon expiration of the auto-tuned delay, and update, during a detection window of time, a duration of the auto-tuned delay based on the filtered drain-source voltage.