Patents Assigned to Silergy Semiconductor Technology (Hangzhou) Ltd.
  • Patent number: 10699988
    Abstract: A method of forming a chip package structure can include: forming a substrate; forming a first cavity in the substrate; and installing a first chip in the first cavity. The method can also include forming a second cavity in the substrate; and installing a second chip in the second cavity. The first cavity is located at a first side of the substrate, and the second cavity is located at a second side of the substrate, where the first side of the substrate is opposite to the second side of the substrate.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: June 30, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventor: Shijie Chen
  • Patent number: 10686058
    Abstract: A method of manufacturing a trench MOSFET can include: forming an epitaxial semiconductor layer having a first doping type on a semiconductor substrate; forming a trench extending from a first surface of the epitaxial semiconductor layer to an internal portion of the epitaxial semiconductor layer; forming a first insulating layer and a shield conductor occupying a lower portion of said trench, where the first insulating layer is located on a lower sidewall surface and a bottom surface of the trench and separates the shield conductor from the epitaxial semiconductor layer; forming a second insulating layer covering a top surface of said shield conductor, where the second insulating layer is patterned by using a hard mask; forming a gate dielectric layer and a gate conductor occupying an upper portion of the trench; and forming a body region, a source region, and a drain electrode.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: June 16, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Jinyong Cai, Zhongping Liao
  • Patent number: 10673325
    Abstract: A DC-DC converter can include: a switched capacitor converter; and a switching converter, where input ports of the switched capacitor converter and the switching converter are coupled to each other in one of series and parallel connections, and output ports of the switched capacitor converter and the switching converter are coupled to each other in the other of series and parallel connections.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: June 2, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Wang Zhang, Chen Zhao
  • Patent number: 10673324
    Abstract: An isolated converter with switched capacitors can include: a first capacitor; a first group of switches coupled between two terminals of an input port, where the first group of switches is configured to selectively couple a first terminal of the first capacitor to one of a first terminal and a second terminal of the input port; a second group of switches coupled between two terminals of an output port, where the second group of switches is configured to selectively couple a second terminal of the first capacitor to one of a first terminal and a second terminal of the output port; and a second capacitor coupled between one of the first and second terminals of the input port and one of the first and second terminals of the output port.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: June 2, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Wang Zhang, Chen Zhao
  • Patent number: 10658857
    Abstract: The present disclosure relates to a power management circuit and a mobile terminal having a first switch for blocking current. The first switch blocks an input of an external power supply in a case that a predetermined load operates in a large current/voltage mode. A bi-directional DC converter boosts a battery voltage and supplies it to the load. Thus, the circuit is simplified and the number of components is reduced for power management.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: May 19, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Chen Zhao, Lingdong Zhang
  • Patent number: 10651725
    Abstract: A method of reducing THD can include: acquiring a first average inductor current during a first conduction time of a main power transistor of a power converter in a switching cycle; acquiring a second average inductor current during a second conduction time and an off time of the main power transistor in the switching cycle; and adjusting the second conduction time of the main power transistor in accordance with a difference between the first and second average inductor currents, where the first and second conduction times are successive.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: May 12, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Longqi Wang, Jianxin Wang
  • Patent number: 10652965
    Abstract: An apparatus can include: a light-emitting diode (LED) drive circuit having a silicon-controlled rectifier dimmer; and a bus voltage adjustment circuit configured to adjust a direct current bus voltage to delay a turn-on time instant of the silicon-controlled rectifier dimmer when a conduction angle signal is greater than an angle threshold.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: May 12, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Jianxin Wang, Huiqiang Chen
  • Patent number: 10652960
    Abstract: A power converter for an LED drive circuit, can include: a capacitor and an LED load coupled in parallel to receive an output signal of a rectifier circuit; a power switch coupled in series with the LED load, and being configured to control a current path from the rectifier circuit to the LED load; and a control circuit configured to control the power switch to be turned off in accordance with an error between an output current flowing through the LED load and a desired current value to decrease power consumption of the power switch, where the operation of the power switch is controlled to transition between on and off states in each sinusoidal half-wave period.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: May 12, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Qiukai Huang, Jianxin Wang, Qingliang Zheng
  • Patent number: 10638562
    Abstract: A power converter for an LED driver, can include: an input capacitor circuit coupled between input terminals of the power converter and being configured to receive an output signal of a rectifier circuit; a transistor coupled in series with an LED load; and a control circuit configured to regulate a capacitance value of the input capacitor circuit to regulate an input current, and to control the transistor to regulate a current flowing through the LED load.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: April 28, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Qiukai Huang, Jianxin Wang, Qingliang Zheng
  • Patent number: 10634728
    Abstract: A method of detecting a state of charge of a battery, can include: obtaining an open circuit voltage in a present cycle according to an open circuit voltage of a previous cycle, a battery internal resistance of the previous cycle, and a battery capacitance of the previous cycle, where the battery internal resistance and the battery capacitance are updated according to the state of charge of the battery; and determining the state of charge of the battery according to the open circuit voltage in the present cycle.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: April 28, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Xiaodong Huang, Hejinsheng Cao
  • Patent number: 10638560
    Abstract: An LED driver with a silicon-controlled dimmer, can include: a supplementary current generating circuit configured to generate a supplementary current to ensure that an input current of the LED driver meets conduction requirements of the silicon-controlled dimmer; and where the supplementary current is determined in accordance with a drive current flowing through an LED load and a holding current of the silicon-controlled dimmer.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: April 28, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Huiqiang Chen, Zhishuo Wang, Jianxin Wang
  • Patent number: 10615106
    Abstract: The present disclosure relates to a chip package structure and a method for forming a chip package. A package unit is formed from the chip and an encapsulant surrounding the chip to have an increased area. A redistribution layer is formed on the package unit to draw out to and redistribute input/output terminals on a surface of the chip. The redistribution layer is then electrically coupled to a leadframe or a printed circuit board by external and electrical connectors. The method and the package structure are suitable for providing a chip package having input/output terminals with high density, reducing package cost, and improving package reliability.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: April 7, 2020
    Assignee: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD.
    Inventor: Jiaming Ye
  • Patent number: 10601248
    Abstract: The present disclosure relates to a resonance-type contactless power supply, an integrated circuit and a constant voltage control method. The resonance-type contactless power supply includes an inverter, a transmitter-side resonant circuit, a receiver-side resonant circuit, a rectifier circuit, and an output capacitance. In this resonance-type contactless power supply, the inverter receives electric energy, which is transferred to the rectifier circuit in a first state and is not transferred to the rectifier circuit in a second state. By switching between the first state and the second state, the resonance-type contactless power supply is controlled to provide a relatively constant voltage, and can be electrically coupled directly to a constant-voltage-type load.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: March 24, 2020
    Assignee: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD.
    Inventors: Wang Zhang, Feng Yu
  • Patent number: 10602577
    Abstract: A control circuit for generating a switching control signal to control switching operations of a power switch in a power stage circuit, can include: a first control loop configured to receive a first voltage feedback signal, and to generate a first compensation signal; a voltage regulating circuit configured to receive an output voltage signal of the power stage circuit, and to generate a second compensation signal according to a difference between an output voltage signal of the power stage circuit during different time periods; and control and driving circuit configured to receive the first and second compensation signals and a sense voltage signal that represents a current through an inductor of the power stage circuit, and to generate an OFF signal, and a switching control signal according to the OFF signal and an ON signal.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: March 24, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventor: Xiaoping Chen
  • Patent number: 10594280
    Abstract: A method can include: generating a first compensation value based on a receiving frequency, where the first compensation value represents attenuations of a wireless signal at different receiving frequencies during transmission to an analog receiving circuit; generating a second compensation value based on an automatic gain control coefficient, where the second compensation value represents gain errors corresponding to different automatic gain control coefficients; and generating a received signal strength indication based on the first and second compensation values, an intermediate frequency signal strength, and a gain of the intermediate frequency signal with respect to a received signal.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: March 17, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Junjie Qiao, Ran Li
  • Patent number: 10591552
    Abstract: A parameter identification circuit for a digital power converter having an inductor and a capacitor, can include: an inductor parameter circuit that receives an inductor current of the inductor, a capacitor voltage of the capacitor, a duty cycle in a start-up stage, and a predetermined inductor current, where the inductor parameter circuit obtains an inductor parameter according to an integrated value of the capacitor voltage, an integrated value of the duty cycle in the start-up stage, and the predetermined inductor current, when the inductor current rises to a level of the predetermined inductor current; and a capacitor parameter circuit that receives the inductor current, the capacitor voltage, and a predetermined capacitor voltage, where the capacitor parameter circuit obtains a capacitor parameter according to an integrated value of the inductor current and the predetermined capacitor voltage when the capacitor voltage rises to a level of the predetermined capacitor voltage.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: March 17, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Zhiyuan Shen, Chen Zhao
  • Patent number: 10582577
    Abstract: Disclosed an LED drive circuit, which is configured to switch the connection of a plurality of LED loads between parallel connection and series connection. When an input voltage is low, the LED loads are controlled to be in parallel connection, and the transistors provided on corresponding parallel branch circuits are controlled to operate in a linear state for regulating the current flowing through the parallel branch circuits. When the input voltage increases, the LED loads or LED drive modules are controlled to be in series connection, and the transistors provided on the series branch circuits are controlled to regulate the current flowing through all the LED loads. Accordingly, on one hand, all the LED loads have a same operating time, on the other hand, all the LED loads operate during most time of every operating cycle, which improves the lifetime of the circuit and the utilization of the LED loads.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: March 3, 2020
    Assignee: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD.
    Inventors: Chen Zhao, Xiaodong Huang
  • Patent number: 10573636
    Abstract: Disclosed is an ESD protection device, comprising: a semiconductor substrate; a semiconductor buried layer located in the semiconductor substrate; an epitaxial semiconductor layer located on the semiconductor substrate and comprising a first doped region and a second doped region, wherein the semiconductor substrate and the first doped region are of a first doping type, the semiconductor buried layer, the epitaxial semiconductor layer and the second doped region are of a second doping type, the first doping type and the second doping type are opposite to each other, and the first doped region forms a plurality of interfaces with the epitaxial semiconductor layer. The disclosure improves protection performance and maximum current bearing capacity without increasing parasitic capacitance of the ESD protection device.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: February 25, 2020
    Assignee: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD.
    Inventors: Fei Yao, Shijun Wang, Dengping Yin
  • Patent number: 10573712
    Abstract: The present disclosure relates to a super-junction structure, a method for manufacturing the super-junction structure and a semiconductor device including the super-junction structure. The super-junction structure includes an epitaxy layer of a first doping type and a plurality of first pillar regions of a second doping type which are formed in the epitaxy layer and are separated from each other. Each of the first pillar regions has a doping concentration that decreases from bottom to top. A portion of the epitaxy layer between adjacent ones of the first pillar regions is a second pillar region. The first pillar regions and the second pillar region are arranged alternatively to form the super-junction structure. The first pillar regions are characterized by the doping concentration that decreases from bottom to top so that the super-junction structure has a relatively high breakdown voltage and a relatively low on resistance.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: February 25, 2020
    Assignee: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD.
    Inventors: He Sun, Zhongping Liao
  • Patent number: 10566900
    Abstract: Detecting an output voltage of a switching power supply can include: acquiring a first branch current that changes with a first voltage at a first terminal of an inductor of the switching power supply; acquiring a second branch current that changes with a second voltage at a second terminal of the inductor; controlling the first and second branch currents to flow to a same detection terminal; and detecting the output voltage based on a first current flowing through the detection terminal during a first time period, and a second current flowing through the detection terminal during a second time period.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: February 18, 2020
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventor: Bo Cai