Abstract: The present invention provides systems and methods of dispensing liquids. In one embodiment, the system includes a pump with a removable pump module with at least one displacement piston and at least one piston valve. A motor and base assembly provides the supporting components of the pump, which can be used in environments where precise small volumes of ultra-pure liquids must be transferred from a reservoir to a point of use. The preferred embodiment of the system prevents contaminants and air bubbles from being introduced into the liquid to be dispensed by placing a filter across the discharge line downstream from the pump, and providing a separate drawback line for performing the drawback of the liquid in the dispensing nozzle.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A semiconductor wafer processing system including a multi-chamber module having vertically-stacked semiconductor wafer process chambers and a loadlock chamber dedicated to each semiconductor wafer process chamber. Each process chamber includes a chuck for holding a wafer during wafer processing. The multi-chamber modules may be oriented in a linear array. The system further includes an apparatus having a dual-wafer single-axis transfer arm including a monolithic arm pivotally mounted within said loadlock chamber about a single pivot axis. The apparatus is adapted to carry two wafers, one unprocessed and one processed, simultaneously between the loadlock chamber and the process chamber. A method utilizing the disclosed system is also provided.

Abstract: Systems and methods are described for environmental exchange control for a polymer on a wafer surface. An apparatus for controlling an exchange between an environment and a polymer on a surface of a wafer located in the environment includes: a chamber adapted to hold the wafer, define the environment, and maintain the polymer in an adjacent relationship with the environment; and a heater coupled to the chamber. A method for improving performance of a spin-on material includes: forming the spin-on material on a surface of a wafer; then locating the spin-on material in an environment so that said environment is adjacent said spin-on material; and then controlling an exchange between the spin-on material and said environment. The systems and methods provide advantages because inappropriate deprotection is mitigated by careful control of the environmental temperature and environmental species partial pressures (e.g. relative humidity).

Abstract: An injector and deposition chamber for delivering gases to a substrate or wafer for processing of said substrate or wafer is provided. The injector is provided comprising an elongated member with end surfaces and at least one gas delivery surface extending along the length of the member and which includes a number of first elongated passages formed therein for received a gas. The gas delivery surface contains rounded side regions and a center recessed region. Also formed within the member are a number of thin distribution channels which extend between the first elongated passages and the center recessed region of the gas delivery surface. In another embodiment, the injector further includes at least one second elongated passage formed therein for receiving an etchant species. The etchant species is conveyed via at least one thin distribution channel which extends between the second elongated passage and one of the rounded side regions of the gas delivery surface.

Abstract: Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold.

Abstract: Systems and methods are described for direct skew control and interlock of a gantry. An apparatus includes a gantry that includes a first member defining a gantry primary axis Z, a cross member defining a secondary axis X that is coupled to the first member via a trunnion, and a second member defining a gantry primary axis Z′ coupled to the cross member via an elastic hinge. A method for controlling skew on a cross member moved by a first and second driver includes moving the first and second drivers to a first position, measuring a resulting skew value, and correcting the skew on the cross member by moving the first driver and/or the second driver.

Abstract: An apparatus for delivering a fluidic media to a wafer includes a housing defining a process chamber. A fluidic media delivery member is coupled to the process chamber. A rotatable chuck is positioned in the process chamber. The rotatable chuck has a wafer support surface coated with a coating material. A vacuum supply line is coupled to the rotatable chuck.

Abstract: A method of and an apparatus for coating a substrate with a polymer solution to produce a film of uniform thickness, includes mounting the substrate inside an enclosed housing and passing a control gas, which may be a solvent vapor-bearing gas into the housing through an inlet. The polymer solution is deposited onto the surface of the substrate in the housing and the substrate is then spun. The control gas and any solvent vapor and particulate contaminants suspended in the control gas are exhausted from the housing through an outlet and the solvent vapor concentration is controlled by controlling the temperature of the housing and the solvent from which the solvent vapor-bearing gas is produced. Instead the concentration can be controlled by mixing gases having different solvent concentrations. The humidity of the gas may also be controlled.

Abstract: A removable cover for protecting a reticle used in a lithography system is described. The removable cover includes a frame and a membrane supported by the frame. The membrane is transparent to an inspection wavelength such that the reticle can be inspected with the removable cover in place. This removable cover protects the reticle when the removable cover is in place and is removable for lithographic exposure. The removable cover can further include at least one reticle fastener that applies force to the reticle thereby preventing movement of the removable cover relative to the reticle when the removable cover is in place. A plurality of fasteners are used to position and secure the removable cover and reticle. A method of performing lithography and a lithographic system are also described.

Abstract: A chemical vapor deposition (CVD) system is provided for processing a substrate 110. The system 100 includes a heated muffle 115, a chamber 120 having an injector assembly 130 for introducing chemical vapor to process the substrate 110, and a belt 105 for moving the substrate through the muffle and chamber. The belt 105 has an oxidation-resistant coating 175 to reduce formation of deposits thereon. The coating 175 is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating 175 comprises a securely-adhered oxide layer 185 that is substantially free of transition metals. Preferably, the oxidation-resistant coating 175 comprises aluminum oxide. More preferably, the coating 175 comprises an aluminum oxide layer 185 securely adhered over a nickel aluminide layer 180.

Abstract: A deposition chamber for delivering gases to a substrate or wafer for processing of said substrate or wafer is provided. The injector is provided comprising an elongated member with end surfaces and at least one gas delivery surface extending along the length of the member and which includes a number of first elongated passages formed therein for received a gas. Also formed within the member are a number of thin distribution channels which extend between the first elongated passages and the gas delivery surface. In another embodiment, the injector further includes at least one second elongated passage formed therein for receiving an etchant species. Metering tubes may be inserted into each elongated passage and are spaced from the walls of said passages and extend between the ends.

Abstract: An improved method and apparatus for coating semiconductor substrates with organic photoresist polymers by extruding a ribbon of photoresist in a spiral pattern which covers the entire top surface of the wafer. The invention provides a more uniform photoresist layer and is much more efficient than are current methods in the use of expensive photoresist solutions. A wafer is mounted on a chuck, aligned horizontally and oriented upward. An extrusion head is positioned adjacent to the outer edge of the wafer and above the top surface of the wafer with an extrusion slot aligned radially with respect to the wafer. The wafer is rotated and the extrusion head moved radially toward the center of the wafer while photoresist is extruded out the extrusion slot. The rotation rate of the wafer and the radial speed of the extrusion head are controlled so that the tangential velocity of the extrusion head with respect to the rotating wafer is a constant.

Abstract: A spin coating process for controlling the mean thickness of photoresist on the surface of a semiconductor wafer. The wafer surface has a central axis normal to the surface. The process comprises the steps of applying the solution to the wafer surface and spinning the wafer about the central axis at a spindle speed until the solution has dried. The spindle speed is a function of the desired mean thickness of the photoresist, the barometric pressure and the relative humidity. The spindle speed is determined from a statistical model described by the equation: MT=A+B×RH+C×BP+D/SS1/2 wherein: MT is mean thickness in Å; RH is relative humidity in percent; BP is barometric pressure in mm of Hg; SS is spindle speed in rpm; and A, B, C and D are constant coefficients.

Abstract: A wafer processing system for delivering a processing gas and an inert gas to a chamber which includes a CVD processing region having a plurality of gas flow paths for conveying the gases to the chamber and exhausting them from the chamber. A flow control system is coupled to each of the exhaust gas flow paths and each of the process gas exhaust flow paths are separately controlled to maintain a constant rate of flow within each of the gas flow paths, independent of the accumulation of deposition byproducts. Utilization of a self-cleaning orifice allows a pressure differential measurement in a process exhaust line to measure flow. The wafer processing system is provided with load and unload regions surrounding the chamber(s), each having additional inert gas exhaust flow paths.

Abstract: The present invention relates to chemical delivery systems and methods for delivery of liquid chemicals. In one embodiment, the present invention relates to systems having multi-reservoir load cell assemblies for delivering chemicals used in the semiconductor industry. In one embodiment, the present invention provides a multi-reservoir load cell assembly, including a controller, a buffer reservoir, a main reservoir, one or more load cells, coupled to the assembly and to the controller, operable to weigh the liquid in the reservoir(s), a plurality of supply lines, each supply line having a valve and connecting one of the supply containers to the main reservoir, and a gas and vacuum sources for withdrawing the liquid from the assembly when demanded by the controller and for refilling the assembly from the supply containers.

Abstract: The invention provides a hot plate oven suitable to bake materials on substrates such as flat panel displays and large semiconductor wafers such as 300 mm in diameter and above. The hot plate oven in one embodiment includes an insulated chamber, a heater in the chamber, a door for entry of a substrate, a frame, preferably water cooled, for suspending the substrate above the heater, a substrate lowering mechanism to hold the frame and lower the substrate to a certain height above the heater at least one fluid cooled pin to counteract sag when the substrate is heated, and a set of manifolds and valves to feed and exhaust gases, vapors, and apply a vacuum to the chamber. In another feature, the oven assembly includes a stack of low profile ovens, each having a door on the side for entry of a substrate.

Abstract: In summary, the vertical rapid cooling furnace of this invention for treating semiconductor wafers with self contained gas chilling and recycling comprises a hot wall reaction tube positioned within a cylindrical array of heating coils. Space between the hot wall reaction tube and said array of heating coils provides a cooling gas passageway therebetween. The cooling gas passageway has an inlet and an outlet, a chilled gas inlet communicating with the inlet of the cooling gas passageway and a heated gas outlet communicating with the outlet of the cooling gas passageway. The furnace includes a heat exchanger having a hot gas inlet and a chilled gas outlet, the hot gas inlet thereof communicating with said heated gas outlet, and the chilled gas outlet communicating with said cooling gas passageway inlet. With this system, heated gas from the cooling gas passageway can be chilled to remove heat therefrom and returned to the cooling gas passageway to remove heat from the furnace.

Abstract: A protective shield and a semiconductor processing system including a protective shield is provided. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base having a continuous unit frame, a perforated sheet carried by said continuous frame, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet. The chemical vapor deposition system includes a plurality of processing chambers, a conveyor for transporting substrates through the processing chambers, buffer modules isolating the processing chambers from the rest of the process path all enclosed within a muffle.

Abstract: A wafer carrier is provided comprised of a circular plate having a flat edge region extending around the circumference of the plate. The plate has a circular recessed center region with a recessed bottom surface and includes an upwardly inclined surface around the periphery of the recessed bottom surface. A substrate is placed in the center region where it is supported by a portion of the upwardly inclined surface and is spaced apart form the recessed bottom surface such that the substrate is supported only around its edge. The wafer carrier minimizes surface contact with the substrate thereby minimizing metal contamination and surface damage to the backside of a substrate and prevents deposition on the backside of the substrate.