Abstract: A solid body is disclosed. The solid body includes: a detachment plane in an interior space of the solid body, the detachment plane including laser radiation-induced modifications; and a region including layers and/or components. A multi-component arrangement is also disclosed. The multi-component arrangement includes: a solid-body layer including more than 50% SiC and modifications or modification components generating pressure tensions in a region of a first surface, the modifications being amorphized components of the solid-body layer, the modifications being spaced closer to the first surface than to a second surface opposite the first surface, the first surface being essentially level; and a metal layer on the first surface of the solid-body layer.

Abstract: The present invention therefore relates to a method for separating at least one solid body layer (2) from a donor substrate (1).

Abstract: The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2).

Abstract: A method for separating a solid-body layer from a donor substrate includes providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface, and producing modifications within the donor substrate using at least one LASER beam. The at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90° relative to the longitudinal axis of the donor substrate. The method further includes producing a stress-inducing polymer layer on the planar surface of the donor substrate, and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer. The mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.

Abstract: A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.

Abstract: A method for separating a solid body includes: providing a first solid body having opposite first and second surfaces and a crystal lattice, and that is at least partially transparent to a laser beam emitted by a laser; modifying a portion of the crystal lattice by the laser beam, the laser beam penetrating through the first surface, the modified portion of the crystal lattice extending in a plane parallel to the first surface, as a result of the modification, subcritical cracks are formed arranged in a plane parallel to the first surface, a plurality of the subcritical cracks forming a detachment region in the first solid body, the plurality of the subcritical cracks passing at least in some sections through the modified portion of the crystal lattice; and separating the first solid body along the detachment region to form a wafer and a second solid body.

Abstract: The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

Abstract: The invention relates to a method for creating a detachment zone in a solid in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed.

Abstract: The present invention relates to a method for generating control data for the secondary machining of a solid body (1), in particular wafer, which is modified by means of laser beams (10). The interior of said solid body (1) has multiple modifications (12), said modifications (12) having been produced by means of laser beams (10).

Abstract: A method for cutting off at least one portion, in particular a wafer, from a solid body is contemplated. The method includes: modifying the crystal lattice of the solid body by means of a modifier, wherein a number of modifications are produced to form a nonplanar, in particular convex, detachment region in the interior of the solid body, wherein the modifications are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion and a defined further treatment of the portion, detaching the portion from the solid body.

Abstract: The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4).

Abstract: A method for producing microcracks in an interior of a composite structure includes: providing or producing the composite structure which has a solid body and at least one metallic coating and/or electrical components situated or provided on one side of the solid body, the solid body containing or being made of silicon carbide (SiC); and producing modifications in the interior of the solid body. Laser radiation is introduced into a flat surface of the solid body to cause multiphoton excitation which brings about plasma generation. The modifications are effected by the plasma in the form of a material transformation which generates compressive stresses in the solid body, thereby developing subcritical cracks in a surrounding area of a particular modification. The laser radiation is introduced into the solid body in pulses having an intensity which reaches a maximum within 10 ns after a start of a particular pulse.

Abstract: A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

Abstract: According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1).

Abstract: A method for producing a detachment area in a solid body in described. The solid body has a crystal lattice and is at least partially transparent to laser beams emitted by a laser. The method includes: modifying the crystal lattice of the solid by a laser beam, wherein the laser beam penetrates through a main surface of a detachable solid portion of the solid body, wherein a plurality of modifications are produced in the crystal lattice, wherein the modification are formed in a plane parallel to the main surface and at a distance from one another, wherein as a result of the modifications, the crystal lattice cracks the regions surrounding the modifications sub-critically in at least the one portion, and wherein the subcritical cracks are arranged in a plane parallel to the main surface.

Abstract: A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

Abstract: A method for creating a detachment zone in a solid includes: providing a solid which is to be processed; providing a laser light source; subjecting the solid to laser radiation from the laser light source so that laser beams penetrate into the solid via a surface of the solid portion that is to be cut off; applying the laser radiation in a defined manner to a predefined portion of the solid inside the solid such that a detachment zone or a plurality of partial detachment zones is formed; wherein a number of modifications are successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications as a result of the modifications, the fissures in the region of the modifications predefining the detachment zone or the plurality of partial detachment zones.

Abstract: A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.

Abstract: Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in

Abstract: A method for producing a solid body layer having a domed or curved shape at least in sections includes: irradiating a surface of the solid body by laser beams emitted from a laser application device to produce a modified region within the solid body that includes modifications having an extension in a longitudinal direction of the solid body, the longitudinal extension extending orthogonally to the irradiated solid body surface, wherein the modifications are configured to guide a crack for detaching the solid body layer upon application of an external force; and enlarging the extension of the modified region in the longitudinal direction to increase stress produced by the modified region in unmodified material of the solid body, wherein enlarging the extension of the modified region in the longitudinal direction increases the probability of spontaneous splitting of the solid body layer from the solid body without application of the external force.