Abstract: The invention relates to a method for the production of layers of solid material, in particular for use as wafers, comprising the following steps: providing a workpiece for the separation of layers of solid material, the workpiece having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material, the carrier unit being made in a number of layers, the carrier unit having a stabilisation layer and the stabilisation layer being overlapped at least partially by a receiving layer, the receiving layer being made to hold the layer of solid material, and the stabilisation layer being formed, at least partially, such that it has an E modulus that is greater than the E modulus of the receiving layer, connecting the receiving layer to the exposed surface of the workpiece, thus forming a composite structure, exposing the composite structure to an inner and/or outer stress field such that the layer of solid material is separated along a plane of the workpiece
Abstract: A method of printing comprises the steps of: providing a solid state material having an exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, wherein an exposed surface of the removed layer of solid state material has a surface topology corresponding to the stress pattern.
Abstract: A method of printing comprises the steps of: providing a solid state material having an exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, wherein an exposed surface of the removed layer of solid state material has a surface topology corresponding to the stress pattern.