Abstract: A memory system and an operating method thereof include: at least a CPU configured to generate a special command; at least a PCIe link coupled with the CPU, wherein the PCIe link includes at least a PCIe switch; and a plurality of memory devices connected with the PCIe switch, wherein each of the plurality of memory devices includes a memory controller, an operational mode switch, and a plurality of memory components, and the operational mode switch is configured to perform a loopback from the memory controller corresponding to the special command at loopback operational mode.

Abstract: A plurality of bins and a plurality of soft read values are stored in a lookup table where those bins that are either a leftmost bin or a rightmost bin correspond to soft read values having a maximum magnitude. Bin identification information is received for a cell in solid state storage. A soft read value is generated for the cell in solid state storage, including by: accessing the lookup table, mapping the received bin identification information to one of the plurality of bins in the lookup table, and selecting the soft read value in the lookup table that corresponds to the bin which is mapped to.

Abstract: A flash memory management method and apparatus provides for the separation of the command and data paths so that communication paths may be used more efficiently, taking account of the characteristics of NAND FLASH circuits where the times to read, write and erase data differ substantially. A unique sequence identifier is assigned to a write command and associated data and association of the data and commands are validated prior to writing to the memory by comparing the unique sequence numbers of the data and command prior to executing the command. This comparison is performed after the data and command have traversed the communication paths.

Abstract: A charge constrained bit sequence is processed to obtain a lower bound on a number of bit errors associated with the charge constrained bit sequence. The lower bound is compared against an error correction capability threshold associated with an error correction decoder. In the event the lower bound is greater than or equal to the error correction decoder threshold, an error correction decoding failure is predicted.

Abstract: A storage system includes a channel detector, an LDPC decoder, and an erasure block. The channel detector is configured to receive data corresponding to data read from a storage and output an LLR signal. The LDPC decoder is configured to receive the LLR signal and output a feedback signal to the channel detector. The erasure block is configured to erase at a portion of at least one of the LLR signal and the feedback signal. A method for testing includes generating an error rate function corresponding to an erasure pattern. The function is a function of a number of LDPC iterations. The method includes determining testing parameters at least in part based on the error rate function, wherein the testing parameters comprise a testing number of LDPC iterations, a passing error rate, and the erasure pattern. The method includes testing storage devices using the testing parameters.

Abstract: A starting read threshold is received. A first offset and a second offset is determined. A first read is performed at the starting read threshold offset by the first offset to obtain a first hard read value and a second read is performed at the starting read threshold offset by the second offset to obtain a second hard read value. A soft read value is generated based at least in part on the first hard read value and the second hard read value.

Abstract: Data associated with logical addresses are received where the data is to be stored on a plurality of solid state storage dies and each of the plurality of solid state storage dies is independently accessible. Metadata is generated that includes the logical addresses where the metadata and the data sum to an amount of information that is less than a maximum amount of information that can be written to the plurality of solid state storage dies in a single write operation. The metadata and the data are stored in the plurality of solid state storage dies.

Abstract: A voltage regulator, an active circuit, and a passive circuit is used. The active circuit is used to supply a reference signal as an input to the voltage regulator during a higher power mode. The passive circuit is used to supply a second reference signal as the input to the voltage regulator during a lower power mode, wherein the lower power mode consumes less power than the higher power mode.

Abstract: A command is received from a host. It is determined which paths in a plurality of paths are enabled. The type of command and the length associated with the command, if applicable, are determined. A path to use to perform the command is selected from the plurality of paths based at least in part on (1) which paths are determined to be enabled and one or more of the following (2a) the type of the command or (2b) the length associated with the command. The selected path is used to perform the command.

Abstract: A setting associated with a number of command execution units to enable is received at a host controller. The host controller is used to configure a plurality of command execution units so that the number of command execution units specified by the setting are enabled. The enabled command execution units are used to process one or more commands associated with storage.

Abstract: An optimal read threshold estimation method includes determining a flip difference corresponding to an optimal step size ?opt, estimating a first slope m1 at a first read point and a second slope m2 at a second read point, and obtaining an optimal read threshold (XLPopt) as the intersection of a first line with the first slope m1 and a second line with the second slope m2.

Abstract: Memory systems may include a logical block address (LBA) space divided into a number of zones, a counter associated with each zone, each counter suitable for incrementing a count value when a read is performed on an LBA in the zone with which the counter is associated, and a controller suitable for calculating a temperature of each zone based on the count values of the counters, sorting the zones according to the calculated temperature, combining the zones into a number of superzones based on the sorting, and splitting the number of superzones into the number of zones into which the LBA space was divided.

Abstract: A workload level associated with an expandable data buffer is determined, where the expandable data buffer and an expandable mapping table cache are stored in internal memory and the expandable mapping table cache is used to store a portion of a mapping table that is stored on external storage. An amount of internal memory allocated to the expandable data buffer and an amount of internal memory allocated to the expandable mapping table cache are adjusted based at least in part on the workload level.

Abstract: A start-up circuit for a bandgap reference circuit include an operational amplifier and a diode coupled to a second input terminal of the operational amplifier. The circuit includes a first current branch including a first transistor and a second transistor in series, for generating a first current in response to an output voltage at an output terminal of the operational amplifier and a second current branch including a third transistor and a fourth transistor in series, for generating a second current in response to the output voltage. The circuit further includes a resistor coupled in parallel to the fourth transistor, an inverter coupled to a connection node between the third and fourth transistors, for inverting a voltage at the connection node and generating an inversion voltage, and a fifth transistor for controlling a switching element flowing a reference current proportional to the voltage with the negative temperature coefficient in response to the inversion voltage.

Abstract: A wear statistic associated with a wear metric distribution is determined, wherein the wear metric distribution is a distribution of a wear metric associated with a group of solid state storage cells. A wear-leveling period is determined, wherein the wear-leveling period is based at least in part on the wear statistic, wherein the wear-leveling period is a measure of time or operations between two wear-leveling operations performed on the group of solid state storage cells.

Abstract: A soft output detector is programmed with a first set of parameters. Soft information is generated according to the first set of parameters, including likelihood information that spans a maximum likelihood range. Error correction decoding is performed on the soft information generated according to the first set of parameters. In the event decoding is unsuccessful, the soft output detector is programmed with a second set of parameters, soft information according is generated to the second set of parameters (including likelihood information that is scaled down from the maximum likelihood range), and error correction decoding is performed on the soft information generated according to the second set of parameters.

Abstract: A host access instruction is received from one of a plurality of channels which are served in parallel. The host access instruction includes an address range of one or more addresses and a type of access. The address range and type of access are compared against a table of stored address ranges and stored types of access associated with any pending host access instructions. It is determined whether to execute the host access instruction based at least in part on the comparison. If it is decided to execute the host access instruction, the host access instruction is forwarded for execution and the address range and the type of access from the host access instruction are stored in the table.

Abstract: A calibration device for use in a memory system includes a bias circuit providing bias current, and a calibration unit generating a control signal for calibration. The bias circuit includes an internal resistor and measures a second bias current generated by mirroring a first bias current through the internal resistor, and adjusts the second bias current to generate the second bias current in a predetermined range as a third bias current. The calibration unit generates the control signal based on a comparison result between a reference voltage and a voltage generated based on the third bias current through an adjustable resistor.

Abstract: A bias generator may include: an operational amplifier, a resister string, and a control circuit. The operational amplifier includes a first input terminal suitable for receiving a bandgap reference voltage, a second input terminal with an offset voltage and an output terminal. The resister string includes at least one resister coupled between a ground terminal and the output terminal of the operational amplifier, suitable for generating bias voltages. The control circuit is coupled between the second input terminal and the resister string, swaps the offset voltage, and selectively provides the offset voltage and the swapped offset voltage to the second input terminal of the operational amplifier.

Abstract: One or more source locations in a group of solid state storage cells on which garbage collection is to be performed are stored in a garbage collection queue. A garbage collection speed is determined, including by: analyzing one or more source locations stored in the garbage collection queue; determining a look-ahead metric, wherein the look-ahead metric comprises an anticipated amount of freed up storage associated with the analyzed source locations; and determining the garbage collection speed based at least in part on the look-ahead metric. One or more garbage collection operations are performed interleaved with one or more host operations, wherein the ratio of garbage collection operations to host operations is based at least in part on the garbage collection speed.