Abstract: This embodiment comprises: a step for preparing a sample wafer; a step for forming a first oxide film on the sample wafer at a temperature of 700-800° C.; a step for forming a second oxide film on the first oxide film at a temperature of 800-1000° C.; a step for forming a third oxide film on the second oxide film at a temperature of 1000-1100° C.; a step for forming a fourth oxide film on the third oxide film at a temperature of 1100-1200° C.; a step for removing the first to fourth oxide films; a step for forming a haze on the surface of the sample wafer by etching the sample wafer from which the first to fourth oxide films have been removed; and a step for evaluating a defective region of the sample wafer on the basis of the haze.

Abstract: Embodiments provide a method of growing a silicon single crystal ingot, the method including growing a silicon single crystal ingot having crystal orientation of (111) using the Czochralski method, measuring a diameter of the silicon single crystal ingot, calculating a length of a facet of the silicon single crystal ingot, calculating a correction formula for a rotation speed of a seed and a correction formula for a pulling speed of the silicon single crystal ingot based on the calculated facet length, and correcting the rotation speed of the seed and the pulling speed of the silicon single crystal ingot based on a result of the calculation.

Abstract: Disclosed are a pin hole inspection apparatus and method for determining whether or not the vacuum-packed state of a Front Opening Shipping Box (FOSB) vacuum-packed with film paper is defective. The pin hole inspection apparatus includes a receiving unit configured such that the FOSB vacuum-packed with the film paper is received thereon and supported thereby, an adsorption unit vacuum-adsorbed onto a target part of the film paper, configured to surround the FOSB received on and supported by the receiving unit, so as to pull the film paper, a displacement measurement unit configured to measure a degree of swelling of the film paper pulled through the adsorption unit, and a processing unit configured to determine whether or not a pin hole is generated by comparing a measurement displacement value acquired through the displacement measurement unit with a pre-stored reference displacement value.

Abstract: An apparatus of cleaning a polishing pad includes: a first gas nozzle for spraying gas onto the pores of the polishing pad; and a first liquid nozzle for spraying a liquid to the pores of the polishing pad.

Abstract: An embodiment provides an epitaxial water evaluation method comprising the steps of: cutting a wafer into a first specimen and a second specimen; growing and thermally treating epitaxial layers of the first and second specimens under different conditions; and measuring the diffusion distance of a dopant in each of the epitaxial layers of the first and second specimens.

Abstract: Disclosed is a method for analyzing a shape of a wafer. The method includes measuring external shapes of a plurality of wafers, detecting a first point having a maximum curvature in an edge region of each wafer from measured values acquired in the measuring the external shapes of the wafers, detecting a second point spaced apart from the first point in a direction towards an apex of a corresponding one of the wafers, measuring a first angle formed between a first line configured to connect the first point and the second point and a front side of the corresponding one of the wafers, forming a thin film layer on a surface of each wafer, measuring a thickness profile of the thin film layer, and confirming a wafer in which a maximum value of the thickness profile of the thin film layer is the smallest among the wafers.

Abstract: The present invention relates to a crucible for an ingot growing apparatus capable of increasing the life span of a graphite crucible. One embodiment of the present invention provides a crucible for an ingot growing apparatus including: a quartz crucible containing a silicon melt and having a lower surface part with a curved shape; a graphite crucible accommodating the quartz crucible and having a body shape divided into at least two parts with respect to a lower surface thereof; and an inner supporter supported between the lower surface of the quartz crucible and the graphite crucible.

Abstract: The present invention provides an apparatus for packing wafer cassettes, the apparatus including: a loading part to which a wafer cassette is loaded; an accessory inspecting part configured to check a recipe attached to the wafer cassette and inspect accessories of the wafer cassette; a first label attaching part configured to attach a first label to the wafer cassette on which the accessory inspection has been completed; a primary film packing part configured to receive a primary film according to the recipe and pack the wafer cassette using the primary film; a secondary film packing part configured to receive a secondary film according to the recipe and secondarily pack the wafer cassette using the secondary film; a second label attaching part configured to attach a second label to the secondary film with which the wafer cassette has been packed; and an unloading part configured to discharge the wafer cassette which has been completely packaged.

Abstract: An embodiment provides a wafer cassette stoker comprising: a cassette on which a plurality of wafers are loaded; a plurality of chambers disposed in one line while forming at least one layer, wherein the cassette after being cleaned is inserted in each of the chambers and a humidity control unit for supplying a compressed dry air (CDA) into the insides of the chambers so as to control humidity of the cassette.

Abstract: The present invention provides a polishing pad for a wafer polishing apparatus, comprising: an upper pad having a front surface part, which has a cut surface and is in contact with a wafer, a rear surface part positioned on the lower part of the front surface part, and a plurality of grid grooves passing through the front surface part and the rear surface part; a lower pad, which is arranged on the lower part of the upper pad and can be attached to a surface plate; and an adhesion part positioned between the upper pad and the lower pad to couple the upper pad with the lower pad.

Abstract: Disclosed is a first cleaning apparatus including a first cleaning bath, a cover provided at the upper part of the first cleaning bath, a drainage portion provided at the lower part of the first cleaning bath, a first cleaning unit and a second cleaning unit provided respectively at a first side surface and a second side surface in the first cleaning bath, and first and second moving units configured to move the first and second cleaning units, respectively, wherein each of the first and second cleaning units includes a plurality of cleaning solution supply pipes provided at different heights and a plurality of nozzles provided at each of the cleaning solution supply pipes, the nozzles provided at one cleaning solution supply pipe have identical cleaning solution spray angles, and the nozzles provided at the other cleaning solution supply pipes have different cleaning solution spray angles.

Abstract: The present embodiments provide a mechanism for computing a thickness of a scanned wafer shape to determine a profile, and computing a delta correction value and a polishing end point time by using a computed PV value by the profile and a set predicted PV value and reflecting the same on the polishing time of each wafer which is under polishing. Accordingly, excellent flatness of a wafer surface can be achieved and simultaneously, a plurality of controllers can be controlled simultaneously to reduce equipment cost.

Abstract: The present invention relates to a wafer carrier thickness measuring device capable of accurately measuring an inner/outer circumferential thickness of a wafer carrier in a non-contact manner. The present invention provides a wafer carrier thickness measuring device including: a first table installed to be capable of rotating and moving vertically and capable of supporting a central portion of a wafer carrier; a second table disposed outside the first table and rotatably installed, and capable of supporting an outer circumferential portion of the wafer carrier; upper and lower sensors for calculating a thickness of the wafer carrier by measuring a distance to upper and lower surfaces of the wafer carrier supported by one of the first and second tables in a non-contact manner; and a sensor driving unit located at one side of the second table and moving the upper and lower sensors to an upper side or a lower side of the wafer carrier supported by one of the first and second tables.

Abstract: An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).

Abstract: An embodiment provides a silicon supply part including: a silicon supply chamber; a holder provided on an inner wall of a lower region of the silicon supply chamber; a tube elevating vertically by a first cable inside the silicon supply chamber; a guide provided outside the tube and overlapped with the holder vertically; and a stopper elevating vertically by a second cable and inserted into a lower portion of the tube to open and close the lower portion of the tube.

Abstract: According to the present invention, there is provided a slurry supply system including: a slurry mixing unit configured to mix slurry; a slurry supply unit in which the slurry mixed in the slurry mixing unit is stored and configured to supply the slurry to a polishing apparatus; a pipe configured to connect the slurry mixing unit and the slurry supply unit; and a slurry cooling unit installed in at least one of pipes configured to connect the slurry supply unit and the polishing apparatus to cool down the mixed slurry.

Abstract: The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (MGP) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the MGP is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface.

Abstract: The present invention provides a wafer polishing apparatus, including: a surface plate having a polishing pad attached on an upper surface thereof; a slurry injection nozzle configured to inject slurry toward the polishing pad; at least one polishing head configured to accommodate a wafer and rotate at an upper portion of the surface plate; an index configured to support so as to connect the at least one polishing head at an upper portion thereof; and a particle suction part coupled to the index and configured to suck particles generated during polishing of the wafer.

Abstract: The present invention relates to a temperature control device for growing a single crystal ingot capable of accurately measuring a temperature of a silicon melt and quickly controlling to a target temperature during an ingot growing process, and a temperature control method applied thereto.

Abstract: A wafer cleaning apparatus may include a cleaning tank, a support part and a cleaning unit installed to be capable of moving upward or downward into the cleaning tank, and configured to inject a cleaning solution onto an inner wall of the cleaning tank. The cleaning unit may include an injection pipe disposed adjacent to the inner wall of the cleaning tank and having a plurality of injection holes, and an injection nozzle coupled to the injection pipe and formed to be inclined such that a diameter of the injection hole decreases in a direction from the injection pipe toward the cleaning tank.