Abstract: The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a Czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a load adjusting part for moving a position of the seed chuck vertically while the seed chuck is connected to the cable to change a load applied to the silicon ingot; and a controlling part for controlling the load applied to the silicon ingot by driving the load adjusting part according to the load value measured from the measuring part. Therefore, shaking of the seed during the growth process of the single crystal ingot is prevented, and thus the diameter deviation of the growing single crystal ingot may be reduced.

Abstract: According to an embodiment of the present invention, there is provided a method for growing a single crystal ingot having a target resistivity in a silicon melt by the Czochralski method, including steps of: deriving a resistivity value according to a dopant concentration included in a raw material and tabulating the resistivity value with reliable data; setting a reference value of a dopant concentration with respect to a target resistivity value; deriving a measurement value with respect to the dopant concentration included in the raw material itself; calculating a difference value between the reference value and the measurement value; and performing a counter doping on the silicon melt as much as the difference value. Accordingly, a single crystal ingot having a resistivity of 8 k? or more can be grown without improving impurities included in the raw material itself.

Abstract: The present disclosure relates to an ingot slicing apparatus, including an ingot moving apparatus provided to be movable vertically and supply an ingot, a wire rotating apparatus provided to be movable horizontally to slice the ingot, a slurry supply unit provided to supply slurry to the slicing apparatus, and an air supply unit provided to supply air to the slicing apparatus and to adjust a supplying amount of the slurry supplied to the slicing apparatus.

Abstract: Provided is a silicon single crystal ingot growing apparatus of an embodiment, including: a chamber; a crucible provided inside the chamber to accommodate silicon melt; a rotating shaft and a crucible support disposed at a lower portion of the crucible; a heater provided inside the chamber to heat the silicon melt; a pulling unit for rotating and pulling up an ingot grown from the silicon melt; and a magnetic field generating unit for applying a horizontal magnetic field to the crucible, wherein a first direction in which the rotating shaft rotates the crucible and a second direction in which the pulling unit rotates the ingot are the same.

Abstract: The present disclosure provides a wafer grinding device comprising: a chuck table to suction the wafer thereon, a grinding wheel to grind the wafer by a predetermined thickness, wherein the grinding wheel includes a grinding body, and grinding teeth arranged along and on a bottom outer periphery of the grinding body, wherein the grinding teeth are segmented; and a cooling unit at least partially extending along a region between a departure point of the grinding teeth from the wafer during rotation of the teeth, and a re-encounter point of the teeth with the wafer during rotation of the teeth, wherein the region extends along rotation path of the grinding teeth.

Abstract: A wafer defect analysis method according to one embodiment comprises the steps of: thermally treating a wafer at different temperatures; measuring an oxygen precipitate index of the thermally treated wafer; determining a characteristic temperature at which the oxygen precipitate index is maximized; and discriminating a type of defect region of the wafer depending on the determined characteristic temperature.

Abstract: An embodiment comprises: a lower plate; an upper plate which is disposed on the lower plate and rotates; a carrier which receives a wafer and is disposed on the lower plate; and a sensor unit for irradiating light to the wafer received in the carrier, detecting light reflected by the wafer, and outputting detection data according to the detection result, wherein the sensor unit rotates together with the upper plate.

Abstract: Provided is a device for measuring wafer defects, which prevents damage of a wafer and also measures defects at upper, lower and side surfaces of the wafer simultaneously. The device for measuring wafer defects includes a lower blower configured to inject air to a lower surface of a wafer to float the wafer; an upper blower provided to be moved up and down with respect to the lower blower and configured to inject the air to an upper surface of the wafer to fix the wafer; an upper contamination measuring part provided at an upper side of the upper blower and configured to detect contamination on the upper surface of the wafer; a lower contamination measuring part provided at a lower side of the lower blower and configured to detect contamination on the lower surface of the wafer; and a side contamination measuring part provided between the upper and lower blowers and configured to detect contamination on a side surface of the wafer.

Abstract: Provided is a semiconductor substrate including a growth substrate, one or more compound semiconductor layers disposed on the growth substrate, and one or more control layers disposed between the compound semiconductor layers. Each control layer includes multiple nitride semiconductor layers including at least Al.

Abstract: The present invention relates a method for controlling a growth interface shape while growing a monocrystal ingot by a Czochralski method, the method including a step of starting a growth of the monocrystal ingot after setting a control condition of a monocrystal growing process so that an interface of the ingot becomes a target shape; a step of deriving a measurement value by measuring a weight of the ingot grown for a predetermined time by means of a load cell disposed on an upper portion the monocrystal ingot; a step of deriving a theoretical value of the weight of the monocrystal ingot through a diameter of the monocrystal ingot measured by a diameter measuring camera disposed outside of a process chamber for a predetermined time and a height of the monocrystal ingot grown for the predetermined time; a step of predicting a growth interface shape of a growing monocrystal ingot by deriving a difference between the measurement value and the theoretical value; and changing process conditions during growth of

Abstract: An embodiment comprises: a guide moving in the vertical direction or the horizontal direction; a transfer arm provided on the guide and loading spaced apart wafers; a laser emission unit disposed on the guide and emitting first laser beams at the spaced apart wafers loaded on the transfer arm; and a laser detection unit disposed below the transfer arm and collecting, from among the first laser beams, second laser beams having passed through gaps between the spaced apart wafers.

Abstract: The present disclosure relates to an apparatus for growing an ingot from silicon melt contained in a crucible by using a seed crystal, the apparatus comprising a chamber including a lower portion for accommodating the crucible and an upper portion through which the growing ingot passes, and a cooling rate control unit which is disposed at the upper portion of the chamber to extend to the lower portion of the chamber and has a hole through which the growing ingot passes, wherein the cooling rate control unit comprises an insulation part for insulating the ingot, a cooling part disposed over the insulation part to cool the ingot, and a blocking part disposed between the insulation part and the cooling part to prevent heat exchange therebetween.

Abstract: An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and receives melted silicon; a heater disposed outside the crucible to heat the crucible; a heat shield part disposed in the chamber; and an auxiliary heat shield part disposed above the crucible to move upward and downward, wherein the auxiliary heat shield part is disposed to be separated from a body part of a single crystal that has grown from the melted silicon, and a rising speed is controlled such that a defect-free zone in the single crystal body part increases. The auxiliary heat shield part can reduce a deviation of a temperature gradient in the body part, whereby increasing the distribution of a defect-free zone in the body part.

Abstract: An embodiment relates to a wafer loading apparatus of wafer polishing equipment.

Abstract: An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals.

Abstract: An embodiment according to the present invention relates to a dressing apparatus for cleaning a polishing pad attached to a lower surface plate, the dressing apparatus comprising: a brushing part comprising a brush; a cleaning solution spray unit, comprising a spray nozzle, for spraying the polishing pad with cleaning solution; and a suction unit, comprising a suction inlet, for suctioning particles generated when the cleaning solution is sprayed by the cleaning solution spray unit, wherein the brushing unit, cleaning solution spray unit and suction unit are attached to each other and swing above the polishing pad in unison.

Abstract: A wafer polishing apparatus capable of maintaining a drive ring in a flat state and a wafer polishing method are provided. In the wafer polishing apparatus and method according to an embodiment, when the head assembly moves to the initial descending position by the wafer elevation unit, the shape of the drive ring inside the head assembly may be measured by using the sensor, and thus the polishing process may be performed in the state where the descending position of the head assembly is automatically adjusted by using the head auxiliary elevation unit to maintain the drive ring in the flat state. Therefore, since the wafer polishing process is performed in the state the balance of the wafer mounting part is automatically adjusted by using the drive ring, the polishing quality of the wafer may be uniformly maintained, and also the polishing performance may be improved.

Abstract: A view port for observing ingot growth process of the present embodiment is as a view port for observing the inside of a chamber providing a space in which a growth process of an ingot is performed includes a body part disposed on the a side of the chamber and having a hole connected to the inside of the chamber; a window being inserted into the hole of the body part to maintain a sealing state of the chamber and through which light being transmitted from the inside of the chamber; and, a window purge being disposed on the side of the body part an forms air curtain. The view port of the present invention proposed has an advantage of prevention of the glass contamination as well as self-cleaning of the contaminated glass of the view port. The ingot that grows in the inside of the chamber may be clearly observed through such a view port and then the process condition is determined through the process data accurately observed.

Abstract: A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

Abstract: Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.