Abstract: A wafer cleaning apparatus may include a cleaning tank, a support part and a cleaning unit installed to be capable of moving upward or downward into the cleaning tank, and configured to inject a cleaning solution onto an inner wall of the cleaning tank. The cleaning unit may include an injection pipe disposed adjacent to the inner wall of the cleaning tank and having a plurality of injection holes, and an injection nozzle coupled to the injection pipe and formed to be inclined such that a diameter of the injection hole decreases in a direction from the injection pipe toward the cleaning tank.

Abstract: Embodiments provide a method of analyzing a shape of a wafer, including: measuring a cross-sectional shape of a plurality of wafers; obtaining a first angle formed by a first line connecting a first point to a second point having a maximum curvature in an edge region of the wafer and a front surface of the wafer; forming a thin film layer on a surface of each of the wafers; measuring a thickness profile of an edge region of the wafer on which each of the thin film layers is formed; and confirming a wafer having a smallest maximum thickness profile of the thin film layer among the plurality of wafers.

Abstract: The present invention provides a driving unit measuring apparatus, the apparatus including: a crucible support for supporting a crucible; a pulling unit for elevating or rotating a seed at an upper portion of the crucible; a crucible driving unit for rotating or elevating the crucible support; a flat nut detachably coupled to the pulling unit; a crucible shaft inspection jig detachably coupled to the crucible driving unit; and a displacement measuring unit coupled to the flat nut and the crucible shaft inspection jig and measuring at least one of elevation and rotational displacement of the pulling unit and the crucible driving unit.

Abstract: The present invention relates to an apparatus of controlling a temperature of a wafer cleaning equipment capable of quickly and accurately determining a detection abnormality of a temperature sensor located inside a cleaning tank, and a method of controlling a temperature using the same. The apparatus of controlling a temperature of a wafer cleaning equipment and the method of controlling a temperature using the same according to the present invention may determine an abnormal operation of a first temperature sensor installed at an inner side of an inner tank by comparing a measurement value of the first temperature sensor installed at the inner side of the inner tank and a measurement value of a second temperature sensor installed at a transfer robot configured to transfer wafers to the inner side of the inner tank.

Abstract: Disclosed is a surface plate cleaning apparatus which cleans the surfaces of surface plates having grooves. The surface plate cleaning apparatus includes an injection unit including an injection head, and at least one first injection nozzle and at least one second injection nozzle, and a moving unit configured to move the injection unit, the at least one first injection nozzle includes a first injection hole to inject a first cleaning solution, the at least one second injection nozzle includes a second injection hole to inject a second cleaning solution, a first separation distance from the upper surface of the injection head to the first injection hole and a second separation distance from the upper surface of the injection head to the second injection hole are different, and a first injection angle of the first cleaning solution and a second injection angle of the second cleaning solution are different.

Abstract: An embodiment provides a method for measuring particles on a wafer surface, the method including: disposing and rotating a wafer on a stage; irradiating a laser in a first region of a center of a surface of the rotating wafer, a second region between the first region and a third region, and the third region at an edge thereof; and measuring a laser reflected from the first to third regions of the wafer, wherein a second output of the laser irradiated in the second region is larger than a first output of the laser irradiated in the first region and a third output of the laser irradiated in the third region is larger than the second output of the laser irradiated in the second region.

Abstract: One aspect of embodiment provides a wafer polishing chamber, including a wafer transfer part; a polishing part provided with an upper surface plate and lower surface plate, and configured to polish the wafer transferred from the wafer transfer part; a partition wall configured to separate positions where the transfer part and the polishing part are disposed; a plurality of fan units configured to introduce air; and a plurality of exhaust units configured to exhaust air, wherein the fan unit may be provided in at least one in an upper portion of the polishing part.

Abstract: A semiconductor substrate manufacturing method according to an embodiment comprises the steps of: contaminating at least one of a surface layer of a doped semiconductor substrate having a specific resistance of less than 0.1 ?·cm and a bulk layer below the surface layer with at least one metal of Fe, Cu, and Ni; performing dry oxidation at 950° C. for 30 minutes to forcibly form an oxide film on the surface of the semiconductor substrate; and assessing at least one of the presence and the degree of contamination of metal contained in at least one of the oxide film-formed surface layer and bulk layer by using a photoluminescence assessment method.

Abstract: An embodiment according to the present invention relates to a dressing apparatus for cleaning a polishing pad attached to a lower surface plate, the dressing apparatus comprising: a brushing part comprising a brush; a cleaning solution spray unit, comprising a spray nozzle, for spraying the polishing pad with cleaning solution; and a suction unit, comprising a suction inlet, for suctioning particles generated when the cleaning solution is sprayed by the cleaning solution spray unit, wherein the brushing unit, cleaning solution spray unit and suction unit are attached to each other and swing above the polishing pad in unison.

Abstract: A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.

Abstract: A method of identifying a wafer defect region is disclosed. The method includes preparing a sample wafer, forming a primary oxide film on the sample wafer at a temperature of 800° C. to 1000° C., forming a secondary oxide film on the primary oxide film at a temperature of 1000° C. to 1100° C., forming a tertiary oxide film on the secondary oxide film at a temperature of 1100° C. to 1200° C., removing the primary to tertiary oxide films, etching one surface of the sample wafer from which the primary to tertiary oxide films are removed to form haze on one surface of the sample wafer, and identifying a defect region of the sample wafer based on the haze.

Abstract: An embodiment provides a method of predicting a thickness of an oxide layer of a silicon wafer including: aging a heat treatment furnace (furnace); measuring a thickness of each of the oxide layers after disposing a plurality of reference wafers in slots of a heat treatment boat in the furnace and forming oxide layers; and measuring a thickness of each of the oxide layers after disposing the plurality of reference wafers and test wafers in the slots of the heat treatment boat in the furnace and forming oxide layers.

Abstract: An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding part arranged inside the chamber; and a pulling part for pulling a single crystal growing from the molten silicon solution, wherein the method can comprise a step of respectively growing a neck part, a shoulder part and a body part.

Abstract: Provided are a method of manufacturing a flexible device and the flexible device, a solar cell, and a light emitting device. The method of manufacturing a flexible device includes providing a device layer on a sacrificial substrate, contacting a flexible substrate on one side surface of the device layer, and removing the sacrificial substrate. A large area device may be transferred onto the flexible substrate with superior alignment to realize and manufacture the flexible device. In addition, since mass production is possible, the economic feasibility may be superior. Also, when a large area solar cell having a thin thickness is manufactured, since a limitation such as twisting of a thin film of a solar cell may be effectively solved, the economic feasibility and stability may be superior.

Abstract: As a process of preparing for a restart of an epitaxial reactor in which epitaxial growth for a wafer is performed, an embodiment includes injecting a nitrogen gas into a process chamber provided in the epitaxial reactor and purging the gas for a predetermined time; heating the inside of the process chamber non-linearly according to time; and measuring MCLT for the epitaxial wafer after growing the epitaxial wafer. A method of preparing for a restart of an epitaxial reactor of the embodiment removes moisture and contaminants stagnated inside the process chamber at a higher rate compared to the related art and also reduces a time to reach the minimum value of MCLT for preparing for a restart of an epitaxial reactor, and thus a time for preparing for a restart of an epitaxial reactor may also be reduced.

Abstract: A wafer defect analysis method according to one embodiment comprises the steps of: thermally treating a wafer at different temperatures; measuring an oxygen precipitate index of the thermally treated wafer; determining a characteristic temperature at which the oxygen precipitate index is maximized; and discriminating a type of defect region of the wafer depending on the determined characteristic temperature.

Abstract: The wafer polishing system is disclosed. The wafer polishing system may comprise a polishing unit; a slurry distribution unit mounted on the polishing unit and distributing a slurry flowing into the polishing unit for wafer polishing; a slurry tank connected to the slurry distribution unit and storing the slurry; a slurry pump connected to the polishing unit and the slurry tank for transferring the slurry from the slurry tank to the polishing unit; a first circulation line in which one side is connected to the slurry tank; a second circulation line in which one side is connected to the other side of the first circulation line and the other side is connected to the slurry distribution unit; and a cleaning liquid supply unit connected to the second circulation line for supplying a cleaning liquid flowing through the second circulation line.

Abstract: A pressing head of the ingot slicing apparatus includes: a head main body in which a plurality of pneumatic supply ports configured to supply compressed air are formed so that pressure on each portion of the pressing head is separately controlled; pressing units installed on a lower end of the head main body, located to correspond to the pneumatic supply ports, and each configured to apply pressure to a side surface of an ingot by the compressed air supplied through each of the pneumatic supply ports; pneumatic correction units each installed on a lower surface of each of the pressing units and configured to control a pressure deviation between the plurality of pressing units; an adhesive plate installed to be in contact with lower side surfaces of the pneumatic correction units so that a lower surface of the adhesive plate is in direct contact with and presses the side surface of the ingot; and a coupling support unit configured to couple and support the head main body, the pressing units, the pneumatic corr

Abstract: The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (MGP) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the MGP is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface.

Abstract: A wire sawing apparatus of one embodiment comprises: a wire for cutting an ingot; an ingot conveyor unit for conveying the ingot to the wire; a nozzle for supplying slurry to the wire; and a dispersed slurry blocking unit disposed above the ingot sawed by the wire, so as to absorb at least a part of the slurry dispersed from the lateral sides of the ingot cut by the wire.