Abstract: The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device, wherein a portion of the shielding device and the carrier are disposed within the reaction chamber. The shielding device includes a first-shield member, a second-shield member and a driver. The driver interconnects the first-shield member and the second-shield member, for driving the first-shield member and the second-shield member to move in opposite directions. During a deposition process, the driver swings the shield members away from each other into an open state. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

Abstract: A substrate-bonding device includes a carrier, three first aligning units, three second aligning units, a pressing plate, and two flat-edge aligners. A carrying surface of the carrier is provided with a placement area for placing a first substrate provided with a flat edge thereon. The first aligning units, the second aligning units and the flat edge aligners are disposed around the placement area. The first aligning units are configured to align the first substrate and to support a second substrate provided with a second flat edge. The second aligning units are configured to align the second substrate. The flat edge aligners are configured to contact the first and the second flat edges, to position and align the first and the second substrates. The pressing plate is disposed to face the placement area for pressing the first and second substrates. The flat edge aligners move along with the pressing plate.

Abstract: Disclosed is a powder atomic layer deposition equipment with a quick release function, comprising a vacuum chamber, a shaft sealing device, and a driving unit connected to the shaft sealing device. The vacuum chamber is connected to the shaft sealing device, and an enclosed space is formed between the vacuum chamber and the shaft sealing device. At least one air extraction line is located in the shaft sealing device and fluidly connected to the enclosed space, the air extraction line being used in pumping gas out from the enclosed space to fix the vacuum chamber to the shaft sealing device so that the drive unit rotates the vacuum chamber via the shaft sealing device to facilitate the formation of a uniform thin film on powder surface. When the pumping stops, the vacuum chamber can be quickly released from the shaft sealing device to improve the process efficiency and convenience of use.

Abstract: The present disclosure provides a shielding mechanism and a thin-film-deposition equipment using the same, wherein the shielding mechanism includes two shield members and a driver. The driver includes a motor and a shaft seal. The motor interconnects the two shield members via the shaft seal, and such that to drive the two shield members to sway in opposite directions and to switch between an open state and a shielding state. Furthermore, each of the two shield members is formed with at least one cavity, for reducing weights thereof and loading of the motor and the driver.

Abstract: The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-shield member, a second-shield member and a driver. The first-shield member has a first-inner-edge surface disposed with a protrusion. The second-shield member has a second-inner-edge surface disposed with a cavity. The driver interconnects and drives the first-shield member and the second-shield member to sway in opposite directions. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

Abstract: An atomic-layer-deposition equipment, includes a reaction chamber, a carrier, a coverage mechanism and a dispensing unit. The carrier and the dispensing unit are disposed within a containing space of the reaction chamber. The coverage mechanism includes a connecting shaft and a cover plate, wherein the cover plate is disposed within the containing space and faces the carrier, the connecting shaft is connected to the cover plate and extends through the reaction chamber. The carrier is configured to carry a substrate assembly and move the substrate assembly with respect to the coverage mechanism, so as to allow the cover plate contacting a top surface of the substrate assembly. When the cover plate contacts the top surface of the substrate assembly, the dispensing unit surrounds the substrate assembly and dispenses a precursor to a lateral surface of the substrate assembly, so as to form a protective layer thereon.

Abstract: The invention provides a vibrating deposition device, which includes a vacuum chamber, a fixed rod and a powder tank. The vacuum chamber includes an inner side surface, and a plurality of bulges and notches are arranged on the inner side surface. The fixed rod and the powder tank are arranged in an accommodating space of the vacuum chamber, wherein the powder tank is used for accommodating powders and contacts the inner side surface of the vacuum chamber through a protruding unit. When the vacuum chamber rotates, the protruding unit will be displaced between the bulge and the notch, and the powder tank will be displaced up and down relative to the vacuum chamber to vibrate powders in the powder tank, so that a uniform film will be formed on the surface of powders.

Abstract: An alignment mechanism of a bonding machine includes a support pedestal, three first alignment members, and three second alignment members. The support pedestal includes a supporting surface having a placement area for supporting a first substrate, and the first and second alignment members are arranged around the placement area. The first alignment members each include a protruding part and a base. The protruding part is used in supporting a second substrate, and protrudes from the base and directed to the placement area. The base is used to position the first substrate. The second alignment members position the second substrate to align the first and second substrates and facilitate the bonding of the first and second substrates.

Abstract: A thin-film-deposition machine includes a chamber, a carrier, an extraction ring and a dispensing unit. The chamber includes a containing space and an extraction channel disposed around the containing space. The extraction channel is partitioned into a first, a second and a third channel areas. The carrier is disposed within the containing space. The first channel area is connected to the third channel area via the second channel area. The third channel area is formed with a height greater than that of the first channel area. The extraction ring includes a plurality of extraction holes and a ring channel. The extraction holes are disposed around the carrier for extracting gas from the containing space to the extraction channel, sequentially via the extraction holes, the ring channel. Thereby an even and steady flow field can be formed above the carrier and the thickness uniformity of film deposition can be improved.

Abstract: The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

Abstract: The present disclosure provides a quantum dot particle with passivation layer, which mainly includes a one quantum dot (QD) particle, a first-passivation layer and a second-passivation layer, wherein the first-passivation layer is disposed on a surface of the QD particle, and the second-passivation layer is disposed on a surface of the first-passivation layer. A precursor chosen for forming the first-passivation layer does not cause damage to the QD particle. A precursor of the second-passivation layer includes a composition of trimethylaluminum (TMA) and water, or TMA and ozone, wherein a density of the second-passivation layer is greater than that of the first-passivation layer. The precursor of the second-passivation layer is kept out by the first-passivation layer, such that to prevent the precursor of the second-passivation layer from contacting the QD particle and causing deterioration thereto, and hence to improve a life cycle of the QD particle.

Abstract: A detachable atomic layer deposition apparatus for powders is disclosed, which includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to the shaft sealing device. The vacuum chamber is fixed to one end of the shaft sealing device via at least one fixing member. The driving unit drives the vacuum chamber to rotate via the shaft sealing device to agitate the powders in a reaction space of the vacuum chamber to facilitate the formation of thin films with uniform thickness on the surface of the powders. In addition, the vacuum chamber can be removed from the shaft sealing device for users to take out the powders from the vacuum chamber and clean the vacuum chamber, thereby improving the convenience in usage.

Abstract: An atomic layer deposition apparatus for coating particles is disclosed. The atomic layer deposition apparatus includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to and drives the vacuum chamber to rotate through the shaft sealing device. The vacuum chamber includes a reaction space for accommodating a plurality of particles, wherein the reaction space has a polygonal columnar shape or a wavy circular columnar shape. An air extraction line and an air intake line are fluidly connected to the vacuum chamber, and the air intake line is used to transport a precursor gas and a non-reactive gas to the reaction space. Through the special shape of the reaction space together with the non-reactive gas, the particles in the reaction space can be effectively stirred to form a thin film with a uniform thickness on the surface of each particle.

Abstract: The present disclosure is an alignment mechanism of a bonding machine, in particular an alignment mechanism of a wafer bonding machine, which mainly has a support pedestal, at least three first alignment pins, and at least three second alignment pins, a first cam and a second cam. When the first cam rotates relative to the support pedestal, it will drive the first alignment pin to move relative to the support pedestal to position the first substrate on the support pedestal. When the second cam rotates relative to the support pedestal, it drives the second alignment pin to move relative to the support pedestal to position the second substrate above the first substrate, so that the second substrate is aligned with the first substrate to facilitate bonding the first substrate and the second substrate.

Abstract: An atomic layer deposition device is disclosed. The atomic layer deposition device includes a chamber, a precursor inlet, a heater, a support unit, a hollow component, and a baffle. When the heater and the support unit are driven by a lifting device to approach the hollow component, the support unit and the baffle surround and set bounds to a reaction space, so that the flow field of the process fluid, such as precursor or purge gas, can be adjusted stably to make a uniform deposition on the substrate.

Abstract: The present disclosure is a light-emitting diode (LED) with oxidized aluminum nitride (oxidized-AlN) film, which includes a substrate, an aluminum nitride buffer (AlN-buffer) layer, an oxidized-AlN film and a light-emitting diode epitaxial structure. The AlN-buffer layer is disposed on a patterned surface of the substrate, wherein the patterned surface is formed with a plurality of protrusions and a bottom portion. The oxidized-AlN film is disposed on the AlN-buffer layer on the protrusions, and with none disposed on the AlN-buffer layer on the bottom portion. The LED epitaxial structure includes gallium nitride compound crystal formed on the oxidized-AlN film and the AlN-buffer layer, to effectively reduce defect density of the gallium nitride compound crystal and to improve a luminous intensity of the LED.

Abstract: The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

Abstract: The present disclosure provides a thin-film-deposition equipment with double-shaft shielding device, which includes a reaction chamber, a carrier and a double-shaft shielding device. The double-shaft shielding device includes a first-connecting arm, a second-connecting arm, a first-shield member, a second-shield member, a first driver and a second driver. The first driver is connected to the first-shield member via the first-connecting arm, and the second driver is connected to the second-shield member via the second-connecting arm, for respectively driving and swinging the two shield members to move in opposite directions via the two connecting arms. Thereby, during a cleaning process of the thin-film-deposition equipment, the two drivers swing the two shield members toward each other into a shielding state for covering the carrier, such that to effectively prevent removed pollutants from polluting the carrier during.

Abstract: The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.

Abstract: A shower head assembly of an atomic layer deposition device has a first trapezoidal column component, a second trapezoidal column component and a column component, wherein a first bottom edge of the first trapezoidal column component is connected to a second top edge of the second trapezoidal column component, and a second bottom edge of the second trapezoidal column component is connected to a top edge of the column component. The first trapezoidal column component has a first bottom dimension distance, the second trapezoidal column component has a second vertical distance, and the column component has a column vertical distance, wherein a ratio of the column vertical distance to the second vertical distance is greater than or equal to 1.2, and a total distance of the second vertical distance and the column vertical distance is less than the first bottom dimension distance.