Abstract: A method for producing a crystallized compound semiconductor material comprises synthesizing said material by fusion and inter-reaction of its constituents placed in elementary form constituting a charge into a sealed ampoule, and then crystallizing the resulting material in liquid form by cooling.

Abstract: The detection device comprises a photodetector provided with first and second terminals. A readout circuit has an input coupled to the first terminal of the photodetector. A bias circuit imposes a bias on the terminals of the photodetector. A test circuit delivers a test current to the photodetector. The test circuit comprises a first transistor through which the test current flows. The first transistor presents a first main electrode connected to the input of the readout circuit and configured so as to have a junction diode opposing flow of the charge carriers when the photodetector is short-circuited.

Abstract: A pixel comprises a photodetector and a control circuit. The pixel is provided with an output terminal designed to connect an analysis circuit. The photodetector is configured to have two different operating modes associated with different biasing conditions. A switch connecting the photodetector to the output terminal of the pixel and a circuit for a connecting/disconnecting the control circuit with the output terminal of the pixel and with the photodetector allow to switch between the two operating modes. A comparator compares the voltage across the capacitive load with respect to a threshold value and outputs first and second signals according to the comparison. The comparator is connected to the circuit for connecting/disconnecting the control circuit and to the switch.

Abstract: The substrate includes successively a first semiconductor layer having a first bandgap energy, a semiconductor buffer layer, a second semiconductor layer having a first bandgap energy different from the first bandgap energy. Two photodetectors sensitive to two different colors are formed respectively on the first and second semiconductor layers. A first biasing pad electrically connects the first semiconductor layer to a first biasing circuit. A second biasing pad electrically connects the second semiconductor layer to a second biasing circuit. The first biasing pad is devoid of electrical contact with the second semiconductor layer.

Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.

Abstract: The analog-to-digital converter comprises a first stage in which a voltage to be converted is applied to the input of a first comparator. The first comparator delivers a first digital result representative of the comparison between the voltage to be converted and the reference voltage on a first digital output. The first digital output is connected to means for calculating a first intermediate voltage. A second comparator compares the first intermediate voltage with the reference voltage and delivers a second digital result on a second digital output terminal. The digital output terminal is connected to second means for calculating a residual voltage according to the voltage to be converted, the first and second voltages and the first and second digital results.

Abstract: The detection circuit of the Source Follower per Detector type comprises a photodiode connected to an integration node. A biasing circuit makes it possible to bias the photodiode between a first reverse-bias state and a second floating state. A readout circuit is connected to the integration node for generating a signal representative of the scene observed by the photodiode. A metal shielding is arranged around the integration node. The metal shielding is connected to an output of the readout circuit configured to have a potential varying in the same direction as the potential at the integration node.

Abstract: A device for characterizing the electro-optical performance of a semiconductor component includes a chamber containing a controlled atmosphere; a measuring head equipped with conductive probes for contacting the electrical interfaces of said component and connected to a data processing system in order to determine said electro-optical performance; and a staging fixture support to accommodate said component(s), the staging fixture being capable of being cooled and being moved in an upward and downward translational movement to bring the electrical interfaces of said component(s) into contact with the tip of the measuring probes of the measuring head. The staging fixture has bumps and the components are positioned in contact with these and the staging fixture accommodates, in the area of each of these bumps, two positioning grids which are capable of sliding relative to each other and cooperating with each other to define pockets suitable for accommodating the component(s) to be characterized.

Abstract: A method of reading electrical charges produced by a photo-detector of a photo-detector matrix includes collecting and storing electrical charges produced by the photo-detector in a first capacitive element, transferring the charges stored in the first capacitive element to a second capacitive element, and reading the voltage at the terminals of the second capacitive element. The transfer followed by the reading is carried out in at least two phases: at least one first phase taking place during the collection and storage of the charges in the first capacitive element, and a second phase taking place at the end of the collection and storage of the electrical charges in the first capacitive element.

Abstract: The detection device includes a semiconductor substrate of a first conductivity type. A matrix of photodiodes organized along a first organization axis is formed on the substrate. Each photodiode is at least partially formed in the substrate. A peripheral biasing ring is formed around the photodiode matrix. The biasing ring is connected to a bias voltage generator. An electrically conducting contact is connected to the substrate and arranged between two photodiodes on the first organization axis. The distance separating the contact from each of the two photodiodes is equal to the distance separating two adjacent photodiodes along the first organization axis. The contact is connected to the bias voltage generator.

Abstract: A device for reading electric currents including a capacitive element to integrate the current, the terminals of the capacitive element being connected to the mass and to an output branch of the device respectively, and a differential pair including: a first transistor mounted between the input branch of the input stage and the capacitive element, the transistor being controlled by a polarized impulse voltage, capable of putting the first transistor alternately into the off state and then into the on state; and a second transistor mounted between the input branch of the input stage and a potential other than that of the capacitive element, said transistor also being controlled by a polarized impulse voltage, capable of putting the second transistor alternately into the off state and then into the on state, wherein the second transistor is mounted in phase opposition relative to the first transistor.

Abstract: An infrared radiation detector includes: a cryostat having a cold finger ensuring heat exchange with a cold source and a window transparent to infrared radiation to be detected; a mechanically fixed cold plane in heat exchange with the cold finger; a detector unit comprising at least a detector circuit sensitive to the infrared wavelength range to be detected, and in direct or indirect heat exchange with the cold plane; and a mechanically fixed cold shield in heat exchange with the cold plane and limiting stray radiation. The cold shield is rotationally symmetrical. An inside wall of the cold shield has a succession of reliefs distributed in at least one helical pattern. A definition axis of the helical pattern coincides with the axis of revolution of the cold shield.

Abstract: The detection device comprises a photodetector provided with first and second terminals. A readout circuit has an input coupled to the first terminal of the photodetector. A bias circuit imposes a bias on the terminals of the photodetector. A test circuit delivers a test current to the photodetector. The test circuit comprises a first transistor through which the test current flows. The first transistor presents a first main electrode connected to the input of the readout circuit and configured so as to have a junction diode opposing flow of the charge carriers when the photodetector is short-circuited.

Abstract: The detection circuit with correlated double sampling comprises two transimpedance amplifiers connected by means of a sampling capacitor. A photodiode is connected to the input of the first transimpedance amplifier. The circuit comprises an anti-blooming circuit connected between the input and output of the first transimpedance amplifier. The anti-blooming circuit comprises means for comparing the output voltage of the first transimpedance amplifier with a setpoint voltage defined by means of the output voltage of the second transimpedance amplifier. The means for comparing are connected to means for applying a feedback current to the input of the first transimpedance amplifier when the difference between the output voltage and the setpoint voltage reaches a limit value.

Abstract: The detection circuit comprises a photodiode connected to a readout circuitry. The photodiode and readout circuitry are connected by means of a transistor arranged to operate as a closed switch when the readout circuitry biases the photodiode in a predefined range and to operate as an open switch in the other cases.

Abstract: In an infrared detector provided with a photodiode, when the temperature of the photodiode is lowered to its operating temperature, the photodiode is forward biased. During forward biasing of the photodiode, injection of a majority carrier current takes place through the photodiode. The majority carriers mask a part of the defects of the photodiode. The acquisition phase is then performed by reverse biasing the photodiode.

Abstract: A method for producing a crystallized compound semiconductor material comprises synthesizing said material by fusion and inter-reaction of its constituents placed in elementary form constituting a charge into a sealed ampoule, and then crystallizing the resulting material in liquid form by cooling.

Abstract: The analog-to-digital converter comprises a first stage in which a voltage to be converted is applied to the input of a first comparator. The first comparator delivers a first digital result representative of the comparison between the voltage to be converted and the reference voltage on a first digital output. The first digital output is connected to means for calculating a first intermediate voltage. A second comparator compares the first intermediate voltage with the reference voltage and delivers a second digital result on a second digital output terminal. The digital output terminal is connected to second means for calculating a residual voltage according to the voltage to be converted, the first and second voltages and the first and second digital results.

Abstract: The detection circuit comprises a photodiode connected to an input of a capacitive transimpedance amplifier. The circuit comprises an anti-blooming circuit connected between the input and an output of the capacitive trans-impedance amplifier. The anti-blooming circuit comprises a field effect transistor connected between the input and output of the capacitive trans-impedance amplifier. The transistor is of pMOS type when the input of the capacitive transimpedance amplifier is connected to a cathode of the photodiode. The transistor is of nMOS type when the input of the capacitive transimpedance amplifier is connected to an anode of the photodiode.

Abstract: A device for characterizing the electro-optical performance of a semiconductor component includes a chamber containing a controlled atmosphere; a measuring head equipped with conductive probes for contacting the electrical interfaces of said component and connected to a data processing system in order to determine said electro-optical performance; and a staging fixture support to accommodate said component(s), the staging fixture being capable of being cooled and being moved in an upward and downward translational movement to bring the electrical interfaces of said component(s) into contact with the tip of the measuring probes of the measuring head. The staging fixture has bumps and the components are positioned in contact with these and the staging fixture accommodates, in the area of each of these bumps, two positioning grids which are capable of sliding relative to each other and cooperating with each other to define pockets suitable for accommodating the component(s) to be characterized.