Abstract: A window-based flash memory storage system and a management and an access method therefor are proposed. The window-based flash memory storage system includes a window-based region and a redundant reserved region; wherein the window-based region is used to store a number of windows, each window being associated with a number of physical blocks. The redundant reserved region includes a dynamic-link area, a window-information area, a dynamic-link information area, and an boot-information area; wherein the dynamic-link area includes a plurality of dynamic allocation blocks, each being allocatable to any window. The window-information area is used to store a specific window-information set that is dedicated to a certain window within a specific range of data storage space. The dynamic-link information area is used to record the status of the allocation of the dynamic allocation blocks to the windows.

Abstract: The invention is directed to a layout of nonvolatile memory device. The memory cell has a gate electrode, a first doped electrode, and a second doped electrode. The first doped electrode is coupled to the bit line. The gate electrode is coupled to one separated word line. A shared coupled capacitor structure is coupled between all of memory cells of the adjacent bit lines from the second doped electrode. The capacitor structure has at least two floating-gate MOS capacitors. Each floating-gate MOS capacitor has a floating-gate transistor having a floating gate, a first S/D region and a second S/D region; and a MOS capacitor coupled to the floating gate. The first S/D region is coupled to the second doped electrode of the corresponding one of the transistor memory cells, and the second S/D region is shared with an adjacent one of the floating-gate transistor.

Abstract: A contactless Mask ROM is described, comprising a plurality of MOS-type memory cells. The memory cells include a plurality of first memory cells and a plurality of second memory cells. The first memory cells have a first channel conductivity so that they are depletion-mode MOS transistors, and the second memory cells have a second channel conductivity so that they are enhanced-mode MOS transistors. In the contactless Mask ROM, a memory cell shares two diffusions with two adjacent memory cells that are aligned with the memory cell along a first direction.

Abstract: The invention is directed to a layout of nonvolatile memory device. The memory cell has a gate electrode, a first doped electrode, and a second doped electrode. The first doped electrode is coupled to the bit line. The gate electrode is coupled to one separated word line. A shared coupled capacitor structure is coupled between all of memory cells of the adjacent bit lines from the second doped electrode. The capacitor structure has at least two floating-gate MOS capacitors. Each floating-gate MOS capacitor has a floating-gate transistor having a floating gate, a first S/D region and a second S/D region; and a MOS capacitor coupled to the floating gate. The first S/D region is coupled to the second doped electrode of the corresponding one of the transistor memory cells, and the second S/D region is shared with an adjacent one of the floating-gate transistor.

Abstract: A semiconductor memory device includes a memory cell array, data buffer, and column switch. The data buffer senses the potential of a bit line to determine data in a selected memory cell and hold readout data in a read. The data buffer detects both whether the whole data buffer holds “0” data and whether the whole data buffer holds “1” data. The column switch selects part of the data buffer and connects the part to a bus.

Abstract: A structure of non-volatile memory has a plurality of buried bit lines in a substrate, extending along a first direction. Selection gate structure lines are located between the buried bit lines. A plurality of stack dielectric films on the both sides of the selection gate structure lines serving as a charge storage region, does not extend to the bit lines and a dielectric layer contacting a surface of substrate adjacent to stacked dielectric films. Word lines are over the substrate, wherein stacked dielectric films and a dielectric layer are interposed between WL and substrate on the region excluding the selection gate structure line, extending along a second direction different from the first direction. Since the charge storage layer does not completely cover between the selection gate structure lines and the bit lines, an additional control gate is formed.

Abstract: A window-based flash memory storage system and a management and an access method therefor are proposed. The window-based flash memory storage system includes a window-based region and a redundant reserved region; wherein the window-based region is used to store a number of windows, each window being associated with a number of physical blocks. The redundant reserved region includes a dynamic-link area, a window-information area, a dynamic-link information area, and an boot-information area; wherein the dynamic-link area includes a plurality of dynamic allocation blocks, each being allocatable to any window. The window-information area is used to store a specific window-information set that is dedicated to a certain window within a specific range of data storage space. The dynamic-link information area is used to record the status of the allocation of the dynamic allocation blocks to the windows.

Abstract: A method for partitioning a memory mass storage device is disclosed. The partition task is performed by the controller within the memory mass storage device. Firstly, the controller partitions the logical space of the memory storage device into multiple areas, each area belonging to a particular drive. Secondly, the controller partitions the logical space of the memory storage device into a public area and a security area, both areas belonging to the same drive. Finally, the controller partitions the logical space of the memory storage device into multiple areas, which include public areas and security areas and belong to multiple drives.

Abstract: The present invention relates to a multi-level read only memory cell that can store two bits and the fabrication method thereof. The multi-level ROM cell has the storage capacity of two bits and the resultant NAND type ROM memory array can provide four logic states of two bits, thus increasing the data storage capacity.

Abstract: A semiconductor memory device includes a memory cell array, data buffer, and column switch. The data buffer senses the potential of a bit line to determine data in a selected memory cell and hold readout data in a read. The data buffer detects both whether the whole data buffer holds “0” data and whether the whole data buffer holds “1” data. The column switch selects part of the data buffer and connects the part to a bus.

Abstract: A pipeline accessing method to a large block memory is described. The large block flash memory has a plurality of pages and each page has a plurality of sectors. The memory device has a controller to control an access operation between a host and a cell array of the large block flash memory with a page buffer. The controller includes at least two buffers, when the host intends to program the memory device. In the method, data sectors are transferred between the host and the large block flash memory by alternatively using the buffers. After transferring N data sectors with respect to one page, a start program command is issued by the controller for programming the data.

Abstract: A memory array device has a plurality of gate structure lines, adjacently disposed over a substrate along a direction, wherein at least a portion of the gate structure lines have memory function. A plurality of first doped regions, in the substrate at a side of a first line of the gate structure lines. A plurality of second doped regions, in the substrate at a side of a last line of the gate structure lines. Wherein the first doped regions and the second doped regions respectively for a plurality of pairs of doped region with respect to a plurality of bit lines. In other words, the conventional source/drain regions for each memory cell are saved. Instead, the gate lines are adjacently disposed together.

Abstract: A method for managing the access procedure for large block flash memory by employing a page cache block, so as to reduce the occurrence of swap operation is proposed. At least one block of the nonvolatile memory is used as a page cache block. When a host requests to write a data to storage device, the last page of the data is written into one available page of the page cache block by the controller. A block structure is defined in the controller having a data block for storing original data, a writing block for temporary data storage in the access operation, and a page cache block for storing the last one page data to be written.

Abstract: A method of state maintenance for a MMC system. The method includes using a plurality of signals, including a working voltage signal, a low voltage detection (LVD) signal, an LVD interrupt signal, a firmware polling signal, an LVD interrupt reset signal. The LVD signal responds to a voltage level of the working voltage at a preset voltage level. The LVD interrupt signal responds to the level of the LVD signal. After the LVD signal returns to the high level state and the firmware polling signal does the polling action to the LVD interrupt signal, then the LVD interrupt reset signal is issued to reset the LVD interrupt signal.

Abstract: The invention is directed to a layout of nonvolatile memory device. The memory cell has a gate electrode, a first doped electrode, and a second doped electrode. The first doped electrode is coupled to the bit line. The gate electrode is coupled to one separated word line. A shared coupled capacitor structure is coupled between all of memory cells of the adjacent bit lines from the second doped electrode. The capacitor structure has at least two floating-gate MOS capacitors. Each floating-gate MOS capacitor has a floating-gate transistor having a floating gate, a first S/D region and a second S/D region; and a MOS capacitor coupled to the floating gate. The first S/D region is coupled to the second doped electrode of the corresponding one of the transistor memory cells, and the second S/D region is shared with an adjacent one of the floating-gate transistor.

Abstract: A memory driving circuit has a register for receiving a new-coming data and a delayed clock, and exporting a current-existing data. The delayed clock has a delay to a clock. A pre-detecting circuit receives the current-existing data, the new-coming data, and a pre-enable signal, and exports an output signal. Wherein, the current-existing data is compared with the new-coming data. The output signal indicates a disable state if the two data are the same. Otherwise, the output signal indicates an enable state, wherein the pre-enable signal is also used to enable or disable the pre-detecting circuit. An output driving circuit receives the current-existing data and an enabling signal, and exports a first output signal. A pre-driving circuit receives the output signal of the pre-detecting circuit and an enable control signal, and exports a second output signal. An I/O pad receives the first output signal and the second output signal.

Abstract: A structure of non-volatile memory has a plurality of buried bit lines in a substrate, extending along a first direction. Selection gate structure lines are located between the buried bit lines. A plurality of stack dielectric films on the both sides of the selection gate structure lines serving as a charge storage region, does not extend to the bit lines and a dielectric layer contacting a surface of substrate adjacent to stacked dielectric films. Word lines are over the substrate, wherein stacked dielectric films and a dielectric layer are interposed between WL and substrate on the region excluding the selection gate structure line, extending along a second direction different from the first direction. Since the charge storage layer does not completely cover between the selection gate structure lines and the bit lines, an additional control gate is formed.

Abstract: A compact mask programmable read-only memory (Mask ROM) is described, comprising a plurality of word lines, a plurality of bit lines, and a plurality of MOS-type and diffusion-type memory cells arranged in an array. The memory cells in one column are coupled to one bit line, and the gates of the MOS-type cells in one row are coupled to one word line via contacts, wherein two columns of memory cells share a column of contacts. A MOS-type cell shares its source and drain with two memory cells in the same column, and a diffusion-type cell directly connects with the diffusions of two adjacent memory cells. A constant number of continuous memory cells are grouped as a memory string, wherein the two diffusions of the two terminal memory cells are electrically connected to a bank select transistor and a ground line, respectively.

Abstract: A non-volatile memory array structure, comprising a plurality of first transistors, serving for memory function, being arranged to have a plurality of columns and a plurality of first rows. The first transistors in each column are coupled in series, and adjacent two of the columns are grouped into a memory group using a common bit line. The gate electrodes of the first transistors in the same first row are coupled with a first sequence word line. A plurality of second transistors are also included. Each of the second transistors is coupled between two columns of the memory group and is adjacent to each of the first rows. The second transistors form a plurality of second rows, wherein gate electrodes of the second transistors in the same second row are coupled to a second sequence word line.

Abstract: A window-based flash memory storage system and a management and an access method therefor are proposed. The window-based flash memory storage system includes a window-based region and a redundant reserved region; wherein the window-based region is used to store a number of windows, each window being associated with a number of physical blocks. The redundant reserved region includes a dynamic-link area, a window-information area, a dynamic-link information area, and an boot-information area; wherein the dynamic-link area includes a plurality of dynamic allocation blocks, each being allocatable to any window. The window-information area is used to store a specific window-information set that is dedicated to a certain window within a specific range of data storage space. The dynamic-link information area is used to record the status of the allocation of the dynamic allocation blocks to the windows.