Patents Assigned to Solid State System Co., Ltd.
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Publication number: 20120173791Abstract: A control method and an allocation structure for a flash memory device are provided herein. The flash memory device has a first memory module and a second memory module. Physical blocks of the first memory module and physical blocks of the second memory module are respectively divided into a plurality of groups, each of which has a plurality of the physical blocks. A first subunit and a second subunit of a first allocation unit are interleavingly written into a first group of the groups of the first memory module and a second group of the groups of the second memory chip respectively. Additionally, a first subunit and a second subunit of a second allocation unit are interleavingly written into a third group of the groups of the first memory module and the second group, respectively.Type: ApplicationFiled: December 30, 2010Publication date: July 5, 2012Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Chih-Hung Wang, Chao-Han Wu, Ting-Chung Hu
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Patent number: 8193596Abstract: A micro-electro-mechanical systems (MEMS) package includes a MEMS microphone device. The MEMS microphone device has a first substrate and at least a sensing element on the first substrate wherein a first chamber in the MEMS microphone device is connected to the sensing element. A second substrate is disposed over the MEMS microphone device to provide a second chamber in the second substrate over the sensing element opposite to the first chamber.Type: GrantFiled: September 3, 2008Date of Patent: June 5, 2012Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Chih-Hsiang Lin
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Patent number: 8173471Abstract: A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.Type: GrantFiled: April 29, 2008Date of Patent: May 8, 2012Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee
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Publication number: 20120090398Abstract: A MEMS structure includes a substrate, a structural dielectric layer, and a diaphragm. A structural dielectric layer is disposed over the substrate. The diaphragm is held by the structural dielectric layer at a peripheral end. The diaphragm includes multiple trench/ridge rings at a peripheral region surrounding a central region of the diaphragm. A corrugated structure is located at the central region of the diaphragm, surrounded by the trench/indent rings.Type: ApplicationFiled: October 14, 2010Publication date: April 19, 2012Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Li-Chi Tsao, Jhyy-Cheng Liou
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Patent number: 8093119Abstract: A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer.Type: GrantFiled: June 24, 2009Date of Patent: January 10, 2012Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee
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Patent number: 8093087Abstract: Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.Type: GrantFiled: August 15, 2011Date of Patent: January 10, 2012Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8094839Abstract: A microelectromechanical system (MEMS) device includes a diaphragm capacitor, connected between a capacitor biasing voltage source and a ground. A source follower circuit is coupled to the diaphragm capacitor. An amplifier is coupled to the source follower circuit to amplify the voltage signal as an output voltage signal. A programmable trimming circuit is implemented with the amplifier to trim a gain or implemented with the capacitor biasing voltage source to trim voltage applied on the diaphragm capacitor. Whereby, the output voltage signal has a target sensitivity.Type: GrantFiled: April 30, 2009Date of Patent: January 10, 2012Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Shao-Yi Wu
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Publication number: 20110302355Abstract: The invention is directed to a mapping method in a memory device with a plurality of memory chips in a sequence of 0 to K, K?1. Each of the memory chips has a plurality of data blocks. The mapping method includes setting a block sequence number ā(K+1)*nā to the (n+1)th data block of the memory chip K, wherein n is a positive integer greater than or equal to 0. Based on the mapping method, a writing method is also provided.Type: ApplicationFiled: June 4, 2010Publication date: December 8, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventor: Gene Lin
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Publication number: 20110300659Abstract: Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.Type: ApplicationFiled: August 15, 2011Publication date: December 8, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8043897Abstract: A method for forming a micro-electro-mechanical systems (MEMS) package includes following steps. A plurality of MEMS units are formed on a substrate, and each of the MEMS units includes at least a MEMS sensing element and a first chamber over the MEMS sensing element. The MEMS units include electric connection pads. A plurality of covering units are formed correspondingly over the MEMS units. Each of the covering units provides a second chamber over the MEMS sensing element opposite to the first chamber. The covering units are adhered to the MEMS units by an adhesive material. The MEMS units are diced into singulated units.Type: GrantFiled: March 21, 2011Date of Patent: October 25, 2011Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Chih-Hsiang Lin
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Patent number: 8030112Abstract: A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.Type: GrantFiled: January 22, 2010Date of Patent: October 4, 2011Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Publication number: 20110183456Abstract: A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.Type: ApplicationFiled: January 22, 2010Publication date: July 28, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Publication number: 20110165717Abstract: A method for forming a micro-electro-mechanical systems (MEMS) package includes following steps. A plurality of MEMS units are formed on a substrate, and each of the MEMS units includes at least a MEMS sensing element and a first chamber over the MEMS sensing element. The MEMS units include electric connection pads. A plurality of covering units are formed correspondingly over the MEMS units. Each of the covering units provides a second chamber over the MEMS sensing element opposite to the first chamber. The covering units are adhered to the MEMS units by an adhesive material. The MEMS units are diced into singulated units.Type: ApplicationFiled: March 21, 2011Publication date: July 7, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Chih-Hsiang Lin
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Publication number: 20110156106Abstract: A hermetic microelectromechanical system (MEMS) package includes a CMOS MEMS chip and a second substrate. The CMOS MEMS Chip has a first substrate, a structural dielectric layer, a CMOS circuit and a MEMS structure. The structural dielectric layer is disposed on a first side of the first structural substrate. The structural dielectric layer has an interconnect structure for electrical interconnection and also has a protection structure layer. The first structural substrate has at least a hole. The hole is under the protection structure layer to form at least a chamber. The chamber is exposed to the environment in the second side of the first structural substrate. The chamber also comprises a MEMS structure. The second substrate is adhered to a second side of the first substrate over the chamber to form a hermetic space and the MEMS structure is within the space.Type: ApplicationFiled: December 28, 2009Publication date: June 30, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Jhyy-Cheng Liou
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Patent number: 7962668Abstract: A USB audio controller includes a USB interface unit, an audio interface unit, a storage interface unit, and a processing unit. The USB interface unit is used to connect to a USB bus for communicating with a host by a communication information. The audio interface unit is used to connect to at least one audio device for communicating with an audio signal. The storage interface unit is used to connect to a memory unit for communicating storage information. The processing unit is for processing the communicating information, storage information, or audio signal.Type: GrantFiled: August 14, 2009Date of Patent: June 14, 2011Assignee: Solid State System Co., Ltd.Inventor: Rong-Hwa Ding
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Patent number: 7951636Abstract: A micro-electro-mechanical system (MEMS) device includes a substrate, having a first side and second side, the second side has a cavity and a plurality of venting holes in the substrate at the second side with connection to the cavity. However, the cavity is included in option without absolute need. A structural dielectric layer has a dielectric structure and a conductive structure in the dielectric structure. The structural dielectric layer has a chamber in connection to the cavity by the venting holes. A suspension structure layer is formed above the chamber. An end portion is formed in the structural dielectric layer in fix position. A diaphragm has a first portion of the diaphragm fixed on the suspension structure layer while a second portion of the diaphragm is free without being fixed.Type: GrantFiled: September 22, 2008Date of Patent: May 31, 2011Assignee: Solid State System Co. Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh
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Publication number: 20110104844Abstract: A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.Type: ApplicationFiled: April 29, 2008Publication date: May 5, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee
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Publication number: 20110082989Abstract: A procedure for reproducing a storage card includes providing a preliminary storage card, wherein the preliminarily storage card has been partitioned into at least a first partitioned region and a second partitioned region and content has been written into the first partitioned region; providing a master storage card without being partitioned; copying the preliminary storage card with at least the first partitioned region and the second partitioned region into the master storage card based on the logic block addressing (LBA) mode, wherein the preliminary storage card is still not partitioned yet; and writing a signature into a DOS file system area of the first partitioned region at a specific signature area, wherein the signature includes a signature ID and a partition information corresponding to at least the first partitioned region and the second partitioned region in the preliminary storage card.Type: ApplicationFiled: October 1, 2009Publication date: April 7, 2011Applicant: Solid State System Co., Ltd.Inventors: Chih-Hung Wang, Chao-Hsiang Huang
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Publication number: 20110059628Abstract: The present invention constructs a SD Flash card by plugging two micro-SD cards into a new apparatus that has the same form factor as a SD Flash card. In this new apparatus, there is a controller to bridge the two micro-SD cards of any SD interface speed type (DS, HS, UHS50 or UHS104) to UHS104. The controller performs striping access function to achieve almost double performance in sequential read/write throughput if it is not limited by the target SD interface speed.Type: ApplicationFiled: September 4, 2009Publication date: March 10, 2011Applicant: SOLID STATE SYSTEM CO., LTD.Inventor: Jen-Kai Chen
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Publication number: 20100330722Abstract: A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer.Type: ApplicationFiled: June 24, 2009Publication date: December 30, 2010Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee