Abstract: A solid state imaging device comprises a pixel array that comprises a plurality of imaging pixels, each of which being capable to generate an imaging signal depending on the intensity of light falling on the imaging pixel, and to detect as an event a positive or negative change of light intensity that is larger than a respective predetermined threshold, and a control unit that is configured to count the number of events occurring within at least one group of imaging pixels and to read out the imaging signals of the imaging pixels within one of the groups, if the according counted number of events is larger than or equal to a predetermined readout threshold.

Abstract: The present technology relates to a semiconductor chip of an imaging element, a method of manufacturing the semiconductor chip, a semiconductor device, a method of manufacturing the semiconductor device, and an electronic device, which are capable of suppressing image quality deterioration of a captured image while securing long-term reliability after mounting of the substrate. The semiconductor chip includes a CMOS image sensor, a sealing resin formed on the CMOS image sensor, and a protective substrate bonded to the CMOS image sensor via the sealing resin. The sealing resin includes a base material and a reinforcing material having a Young's modulus or breaking strength higher than that of the base material. The present technology can be applied to, for example, a semiconductor chip of a CMOS image sensor or the like.

Abstract: The present disclosure generally pertains to image element readout circuitry configured to: sense an amount of electric carriers in a photosensitive element, wherein the photosensitive element is configured to generate the electric carriers in response to light being incident on the photosensitive element; and read the electric carriers from the photosensitive element when the amount of electric carriers has reached a predetermined value.

Abstract: Provided is a sensor device capable of miniaturizing an SPAD pixel. The sensor device includes a first substrate unit and a second substrate unit bonded to the first substrate unit. The first substrate unit includes a first semiconductor substrate and a pixel region provided on the first semiconductor substrate and in which the SPAD pixel and a plurality of visible-light pixels are mixed in an array. The second substrate unit includes a second semiconductor substrate facing the first semiconductor substrate, an SPAD circuit provided on the second semiconductor substrate and connected to the SPAD pixel, and a visible-light pixel circuit provided on the second semiconductor substrate and connected to the plurality of visible-light pixels.

Abstract: Provided is a solid-state imaging device including a semiconductor substrate, a photoelectric conversion unit on the semiconductor substrate, and a recess of two or more steps formed on a surface on a light incident side of the semiconductor substrate, and further provided is a solid-state imaging device including a semiconductor substrate, a photoelectric conversion unit provided on the semiconductor substrate, and a light-shielding wall above the light incident side of the semiconductor substrate, in which the light-shielding wall includes a first portion having a first width extending in a direction substantially parallel to a light incident surface of the semiconductor substrate, and a second portion having a second width extending in a direction substantially perpendicular to the light incident surface, the second width being smaller than the first width, and the second portion is provided between the first portion and the semiconductor substrate.

Abstract: Miniaturization is facilitated in a semiconductor package provided with pixels. A semiconductor package includes a transparent member, a semiconductor chip, a photosensitive rib, and an interposer. In this semiconductor package, pixels are arranged on a part of a chip plane of the semiconductor chip. The photosensitive rib is a photosensitive resin disposed between a region not corresponding to the pixel in the chip plane of the semiconductor chip and the transparent member. Furthermore, the interposer is electrically connected to the semiconductor chip.

Abstract: An object of the present technology is to provide a photodetection device in which occurrence of stress migration is suppressed. A photodetection device includes: a semiconductor layer including a photoelectric conversion unit; an optical element that includes a base material and an opening array formed in the base material, supplies light selected by the opening array to the photoelectric conversion unit, and is arranged so as to overlap the photoelectric conversion unit in plan view, in which the base material has a stacked structure including a first conductor layer, an intermediate layer, and a second conductor layer in this order from the semiconductor layer side.

Abstract: Provided are a semiconductor device in which an air gap structure can be formed in any desired region regardless of the layout of metallic wiring lines, a method for manufacturing the semiconductor device, and an electronic apparatus. A first wiring layer and a second wiring layer including a metallic film are stacked via a diffusion preventing film that prevents diffusion of the metallic film. The diffusion preventing film is formed by burying a second film in a large number of holes formed in a first film. At least the first wiring layer includes the metallic film, an air gap, and a protective film formed with the second film on the inner peripheral surface of the air gap, and the opening width of the air gap is equal to the opening width of the holes formed in the first film or is greater than the opening width of the holes.

Abstract: A solid-state imaging element includes a first photoelectric conversion unit and a second photoelectric conversion unit. The first and second photoelectric conversion units are joined at joint surfaces facing each other, and include an upper electrode, a lower electrode, a photoelectric conversion film, and a storage electrode. The lower electrode of the first photoelectric conversion unit is connected to a charge storage unit via a first through electrode penetrating a semiconductor substrate. The lower electrode of the second photoelectric conversion unit is connected to the charge storage unit via: a second electrode provided on a joint surface of the second photoelectric conversion unit; a first electrode provided on a joint surface of the first photoelectric conversion unit; a second through electrode penetrating the first photoelectric conversion unit; and the first through electrode.

Abstract: [Object] To provide a vehicle-mounted camera capable of successfully absorbing stress applied to a flexible board that connects a main board and an imaging device board to each other. [Solving Means] The vehicle-mounted camera includes an imaging device board, a main board, and a flexible board. The imaging device board includes a first terminal. The main board includes a second terminal. The flexible board includes a first connection portion to be connected to the first terminal, a second connection portion to be connected to the second terminal, and a first bending portion and a second bending portion that are located between the first connection portion and the second connection portion and are bent along a first bending axis and a second bending axis intersecting with each other in a developed state of the flexible board. The vehicle-mounted camera is capable of absorbing stress in any direction applied to the flexible board.

Abstract: The present technology relates to an information processing apparatus, an information processing method, a program, a mobile-object control apparatus, and a mobile object that make it possible to appropriately set the accuracy in detecting an object.

Abstract: The present disclosure pertains to a device which has a circuitry that obtains image data of a scene being representative of a time of flight measurement of light reflected from the scene, wherein the image data is based on a pattern of light being illuminated on the scene, wherein the pattern of light includes high intensity light areas and low intensity light areas; obtains, based on the image data, first image data being representative of the high intensity light areas; obtains, based on the image data, second image data being representative of the low intensity light areas; estimates direct component image data based on the first image data and the second image data; and generates a depth map of the scene based on the direct component image data and the second image data.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes a stacked photoelectric converter for each of pixels. The stacked photoelectric converter has a plurality of photoelectric conversion elements stacked therein. The plurality of photoelectric conversion elements each has different wavelength selectivity. This solid-state imaging device further includes a plurality of data output lines from which pixel signals based on electric charges outputted from the photoelectric conversion elements are outputted. A plurality of data output lines is provided for each predetermined unit pixel column. The plurality of the data output lines is equal in number to an integer multiple of the photoelectric conversion elements stacked in the stacked photoelectric converter.

Abstract: An image sensor, electronic device and method thereof that performs on-sensor multiresolution deep neural network (DNN) processing, such as for gesture recognition. The image data is transformed into first resolution type image data and second resolution type image data. Based on detecting the first resolution type image data includes a predetermined object, processing the second resolution type image data using the second resolution type image data as input into the second DNN.

Abstract: An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

Abstract: A plurality of photoelectric converters is formed on a semiconductor substrate and performs photoelectric conversion according to incident light. A light path portion includes a transparent film through which the incident light is transmitted, a light-blocking wall for each of the plurality of photoelectric converters, the light-blocking wall partitioning the transparent film in a direction perpendicular to the semiconductor substrate, and blocking light, and a light-blocking film at an end of the light-blocking wall, the end being opposite to an end of the light-blocking wall that is closer to the semiconductor substrate, the light-blocking film having a film shape parallel to the semiconductor substrate, and including, for each of the plurality of photoelectric converters, an opening through which the incident light is transmitted.

Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.

Abstract: A semiconductor device includes a semiconductor substrate, a wiring layer including an electrode pad, the wiring layer formed on a first surface of the semiconductor substrate, a redistribution layer including wiring electrically connected to the electrode pad via a via, the redistribution layer formed on a second surface side opposite to the first surface of the semiconductor substrate, a protective film formed on a surface on a side opposite to the semiconductor substrate in the redistribution layer, and a partition formed by an insulating material, the partition arranged between pieces of wiring in the redistribution layer, in which the partition and a void are alternately formed between the pieces of wiring in a direction in which the wiring extends.

Abstract: A light detection element includes a substrate on which a plurality of light reception units is arranged in pixel units, and a filter formed over a plurality of adjacent pixels on the substrate, the filter that cuts visible light and transmits infrared light.

Abstract: The present technology relates to a solid-state imaging device and an electronic device enabling improvement of an SN characteristic. A solid-state imaging device includes a pixel array unit provided with multiple unit pixels. Each of the unit pixels includes: a small pixel having a first photoelectric conversion unit and a first on-chip lens configured to allow light to enter the first photoelectric conversion unit; and a large pixel having a second photoelectric conversion unit divided into multiple regions, and a second on-chip lens that can condense more light than the first on-chip lens and allows light to enter the second photoelectric conversion unit. The present technology may be applied to a CMOS image sensor.